Document Number: 83530 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 2.0, 26-Oct-09 139
Optocoupler, Phototransistor Output
4N25V, 4N25GV, 4N35V, 4N35GV
Vishay Semiconductors
DESCRIPTION
The 4N25V, 4N25GV, 4N35V, 4N35GV series consists of a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual inline
package.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
DIN EN 60747-5-5 (VDE 0884)
Optocoupler for electrical safety requirements
IEC 60950
Office machines (applied for reinforced isolation for mains
voltage ≤ 400 VRMS)
VDE 0804
Telecommunication apparatus and data processing
IEC 60065
Safety for mains-operated electronic and related household
apparatus
FEATURES
• Special construction: therefore, extra low
coupling capacity of typical 0.2 pF, high
common mode rejection
• Low temperature coefficient of CTR
• Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
•
Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
• Thickness through insulation ≥ 0.4 mm
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI ≥ 275
• Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak
• Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage ≤ 300 V
- for appl. class I - III at mains voltage ≤ 600 V
according to DIN EN 60747-5-5
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• BSI: BS EN 41003, BS EN 60065 (BS 415), pending
• DIN EN 60747-5-5 (VDE 0884)
• FIMKO (SETI): EN 60950, certificate no. FI25155
Note
(1) G = leadform 10.16 mm; G is not marked on the body.
CE
B
18537_4
231
546
NCC(-)A (+)
V
DE
17201_4
ORDER INFORMATION (1)
PART REMARKS
4N25GV CTR > 20 % wide lead spacing, DIP-6
4N35GV CTR > 100 % wide lead spacing, DIP-6
4N25V CTR > 20 %, DIP-6
4N35V CTR > 100 %, DIP-6
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140 Rev. 2.0, 26-Oct-09
4N25V, 4N25GV, 4N35V, 4N35GV
Vishay Semiconductors Optocoupler, Phototransistor Output
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
Note
(1) Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR5V
Forward current IF60 mA
Forward surge current tp ≤ 10 µs IFSM 3A
Power dissipation Pdiss 70 mW
Junction temperature Tj125 °C
OUTPUT
Collector emitter voltage VCEO 32 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Pdiss 70 mW
Junction temperature Tj125 °C
COUPLER
Isolation test voltage (RMS) VISO 5000 VRMS
Total power dissipation Ptot 200 mW
Ambient temperature range Tamb - 55 to + 100 °C
Storage temperature range Tstg - 55 to + 125 °C
Soldering temperature (2) 2 mm from case, t ≤ 10 s Tsld 260 °C
ELECTRICAL CHARACTERISTICS (1)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF1.2 1.4 V
Junction capacitance VR = 0 V, f = 1 MHz Cj50 pF
OUTPUT
Collector emitter voltage IC = 1 mA VCEO 32 V
Emitter collector voltage IE = 100 µA VECO 7V
Collector emitter leakage current
VCE = 10 V, IF = 0,
Tamb = 100 °C ICEO 50 nA
VCE = 30 V, IF = 0,
Tamb = 100 °C ICEO 500 nA
COUPLER
Collector emitter saturation voltage IF = 50 mA, IC = 2 mA VCEsat 0.3 V
Cut-off frequency VCE = 5 V, IF = 10 mA,
RL = 100 Ωfc110 kHz
Coupling capacitance f = 1 MHz Ck1pF
Document Number: 83530 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 2.0, 26-Oct-09 141
4N25V, 4N25GV, 4N35V, 4N35GV
Optocoupler, Phototransistor Output Vishay Semiconductors
Note
(1) According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-; IEC 60747
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IF
VCE = 10 V, IF = 10 mA
4N25V CTR 20 100 %
4N25GV CTR
4N35V CTR 100 150 %
4N35GV CTR
VCE = 10 V, IF = 10 mA,
Tamb = 100 °C
4N35V CTR 40 %
4N35GV CTR
MAXIMUM SAFETY RATINGS (1)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward current IF130 mA
OUTPUT
Power dissipation Pdiss 265 mW
COUPLER
Rated impulse voltage VIOTM 6kV
Safety temperature Tsi 150 °C
INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test 100 %, ttest = 1 s Vpd 1600 V
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM 6000 V
Vpd 1400 V
Insulation resistance
VIO = 500 V RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
VIO = 500 V, Tamb = 150 °C
(construction test only) RIO 109Ω
0 25 50 75 125
0
50
100
150
200
300
Ptot - Total Power Dissipation (mW)
Tsi - Safety Temperature (°C)
150
94 9182
100
250 Phototransistor
Psi (mW)
IR-diode
Isi (mA)
t
13930
t1
, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VIOTM
VPd
VIOWM
VIORM
0
t1
ttest
tTr = 60 s tstres
t3t4
t2
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142 Rev. 2.0, 26-Oct-09
4N25V, 4N25GV, 4N35V, 4N35GV
Vishay Semiconductors Optocoupler, Phototransistor Output
Fig. 3 - Test circuit, Non-Saturated Operation Fig. 4 - Test Circuit, Saturated Operation
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Delay time
(see figure 3)
VS = 5 V, IC = 5 mA, RL = 100 Ω,4N25V
4N25GV td4µs
VS = 5 V, IC = 2 mA, RL = 100 Ω,4N35V
4N35GV td2.5 µs
Rise time
(see figure 3)
VS = 5 V, IC = 5 mA, RL = 100 Ω,4N25V
4N25GV tr7µs
VS = 5 V, IC = 2 mA, RL = 100 Ω,4N35V
4N35GV tr3µs
Fall time
(see figure 3)
VS = 5 V, IC = 5 mA, RL = 100 Ω,4N25V
4N25GV tf6.7 µs
VS = 5 V, IC = 2 mA, RL = 100 Ω,4N35V
4N35GV tf4.2 µs
Storage time
(see figure 3)
VS = 5 V, IC = 5mA, RL = 100 Ω,4N25V
4N25GV ts0.3 µs
VS = 5 V, IC = 2 mA, RL = 100 Ω,4N35V
4N35GV ts0.3 µs
Turn-on time
(see figure 3)
VS = 5 V, IC = 5 mA, RL = 100 Ω,4N25V
4N25GV ton 11 µs
VS = 5 V, IC = 2 mA, RL = 100 Ω,4N35V
4N35GV ton 10 µs
Turn-off time
(see figure 3)
VS = 5 V, IC = 5 mA, RL = 100 Ω,4N25V
4N25GV toff 7µs
VS = 5 V, IC = 2 mA, RL = 100 Ω,4N35V
4N35GV toff 10 µs
Turn-on time
(see figure 4) VS = 5 V, IF = 10 mA, RL = 1 kΩ,
4N25V
4N25GV ton 25 µs
4N35V
4N35GV ton 9µs
Turn-off time
(see figure 4) VS = 5 V, IF = 10 mA, RL = 1 kΩ,
4N25V
4N25GV toff 42.5 µs
4N35V
4N35GV toff 25 µs
Channel I
Channel II
14950
RG = 50
tp
tp = 50 s
T= 0.01
+ 5 V
IC = 5 mA / 2 mA
adjusted through
input amplitude
IF
0IF
50 100
Oscilloscope
RL1 M
CL20 pF
Channel I
Channel II
95 10844
R
G
= 50
t
p
t
p
= 50 s
T= 0.01
+ 5 V
I
C
I
F
0I
F
= 10 mA
50 1 k
Oscilloscope
R
L
1 M
C
L
20 pF
Document Number: 83530 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 2.0, 26-Oct-09 143
4N25V, 4N25GV, 4N35V, 4N35GV
Optocoupler, Phototransistor Output Vishay Semiconductors
Fig. 5 - Switching Times
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 8 - Relative Current Transfer Ratio vs.
Ambient Temperature
Fig. 9 - Collector Dark Current vs. Ambient Temperature
tpt
t
0
0
10 %
90 %
100 %
tr
td
ton
tstf
toff
IF
IC
tpPulse duration
tdDelay time
trRise time
ton (= td + tr) Turn-on time
tsStorage time
tfFall time
toff (= ts + tf)Turn-off time
96 11698
0
50
100
150
200
250
300
04080 120
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
96 11700
Coupled device
Phototransistor
IR-diode
0.1
1
10
100
1000
0
V
F
- Forward Voltage (V)
96 11862
I
F
- Forward Current (mA)
1.6
1.2
0.8
0.4 2.0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80
Tamb - Ambient Temperature (°C)
96 11874
CTRrel - Relative Current Transfer Ratio
V
CE
= 10 V
I
F
= 10 mA
1
10
100
1000
10 000
0
Tamb - Ambient Temperature (°C)
96 11875
I
CEO
- Collector Dark Current (nA)
VCE = 10 V
IF = 0 A
70
60
50
40
30
20
10 10090
80
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144 Rev. 2.0, 26-Oct-09
4N25V, 4N25GV, 4N35V, 4N35GV
Vishay Semiconductors Optocoupler, Phototransistor Output
Fig. 10 - Collector Base Current vs. Forward Current
Fig. 11 - Collector Current vs. Forward Current
Fig. 12 - Collector Current vs. Collector Emitter Voltage
Fig. 13 - Collector Emitter Saturation Voltage vs.
Collector Current
Fig. 14 - DC Current Gain vs. Collector Current
Fig. 15 - Current Transfer Ratio vs. Forward Current
0.001
0.010
0.100
1.000
110100
IF - Forward Current (mA)
96 11876
ICB - Collector Base Current (mA)
VCB = 10 V
0.01
0.1
1
10
100
0.1 1 10 100
IF - Forward Current (mA)
96 11904
VCE = 10 V
IC - Collector Current (mA)
0.1
1
10
100
0.1 1 10 100
VCE - Collector Emitter (V)
96 11905
IC - Collector Current (mA)
20 mA
10 mA
5 mA
2 mA
1 mA
IF = 50 mA
110
0
0.2
0.4
0.6
0.8
1.0
VCEsat - Collector Emitter
Saturation Voltage (V)
IC - Collector Current (mA)
100
95 10972
10 % used
CTR = 50 %
used
20 % used
0.01 0.1 1 10
0
200
400
600
800
1000
hFE - DC Current Gain
IC - Collector Current (mA)
100
95 10973
VCE = 10 V
5 V
0.1 1 10
1
10
100
1000
CTR - Current Transfer Ratio (%)
IF - Forward Current (mA)
100
95 10976
VCE = 20 V
Document Number: 83530 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 2.0, 26-Oct-09 145
4N25V, 4N25GV, 4N35V, 4N35GV
Optocoupler, Phototransistor Output Vishay Semiconductors
Fig. 16 - Turn-on/off Time vs. Forward Current Fig. 17 - Turn-on/off Time vs. Collector Current
PACKAGE DIMENSIONS in millimeters
DIP-6
DIP-6, 400 mil
PACKAGE MARKING
01015
0
10
20
30
40
50
IF - Forward Current (mA)
20
95 10974
t
on
/t
off
- Turn-on/Turn-off Time (µs)
Saturated operation
VS = 5 V
RL = 1 kΩ
toff
ton
504
IC - Collector (mA)
10
95 10975
Non-saturated
operation
VS = 10 V
RL = 100 Ω
toff
ton
0
5
10
15
20
8
26
t
on
/t
off
- Turn-on/Turn-off Time (µs)
14771_2
7.12 ± 0.3
0.25
6.5 ± 0.3
1.2 ± 0.1
3.5 ± 0.3
7.62 typ.
0.5 ± 0.1
4.5 ± 0.3
2.8 ± 0.5
4.5 ± 0.3
1 2 3
6 5 4 7.62 to 9.5 typ.
14771_1
7.12
± 0.3
0.25
6.5
± 0.3
1.2
± 0.1
3.5 ± 0.3
10.16 (typ.)
7.62 typ.
0.5 ± 0.1
4.5 ± 0.3
2.8 ± 0.5
4.5
± 0.3
1 2 3
6 5 4
21764-32
4N25
V YWW 24
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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