SEMICONDUCTOR KTB772 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING A B D C E FEATURES Complementary to KTD882. F G H CHARACTERISTIC K SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current DC IC -3 Pulse (Note) ICP -7 IB -0.6 Base Current (DC) Collector Power Ta=25 Dissipation Tc=25 DIM MILLIMETERS 8.3 MAX A 5.8 B C 0.7 _ 0.1 3.1+ D 3.5 E _ 0.3 11.0 + F 2.9 MAX G 1.0 MAX H 1.9 MAX J _ 0.15 0.75 + K 14.0 MIN L _ 0.1 2.3 + M _ 0.15 0.75 + N 1.6 O 3.4 MAX P J MAXIMUM RATING (Ta=25) 1.5 PC Junction Temperature Storage Temperature Range 10 L M O N 1 2 P 3 A 1. EMITTER 2. COLLECTOR 3. BASE A W Tj 150 Tstg -55150 TO-126 Note : Pulse Width 10mS, Duty Cycle50%. ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -1 A Emitter-Cut-off Current IEBO VEB=-3V, IC=0 - - -1 A VCE=-2V, IC=-20mA 30 220 - hFE(2) (Note) VCE=-2V, IC=-1A 100 160 400 hFE(1) DC Current Gain * Collector-Emitter Saturation Voltage * VCE(sat) IC=-2A, IB=-0.2A - -0.3 -0.5 V Base-Emitter Saturation Voltage * VBE(sat) IC=-2V, IB=-0.2A - -1.0 -2.0 V VCE=-5V, IC=-0.1A - 80 - MHz VCB=-10V, IE=0, f=1MHz - 55 - pF Current Gain Bandwidth Product fT Cob Collector Output Capacitance * Pulse Test : Pulse Width350S, Duty Cycle2% Pulsed Note: hFE(2) Classification 2000. 12. 8 O:100200 , Y:160320 , GR:200400 Revision No : 2 1/3 KTB772 I C - VCE h FE - I C 1K -1.6 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (A) -1.8 IB =-10mA IB =-9mA IB =-8mA IB =-7mA IB =-6mA IB =-5mA -1.2 -1.0 IB =-4mA IB =-3mA -0.4 IB =-2mA IB =-1mA 0 0 -4 -8 -12 500 300 VCE =-2V 100 50 30 10 5 3 1 -16 -20 -1 -30 -100 -10K -5K -3K CAPACITANCE Cob (pF) I C /I B =10 VBE (sat) -1K -500 -300 -100 -50 -30 -10 -5 -3 VCE (sat) 1K 500 300 -1K -3K I E =0 f=1MHz 100 50 30 10 5 3 1 -1 -3 -10 -30 -100 -300 -1K -3K -1 COLLECTOR CURRENT I C (A) Revision No : 2 -3 -10 S -0.1 -0.05 -0.03 10 DC m OP S ER C -1 I C MAX. (PULSED) I C MAX. (CONTINUOUS) -1 -0.5 -0.3 -0.01 -0.3 -1K 0 -10 -5 -3 5 =2 Tc 10 5 3 -0.1 -300 10 VCE =-5V -0.03 -100 S 1m 1K 500 300 1 -0.01 -30 SAFE OPERATING AREA f T - IC 100 50 30 -10 -3 COLLECTOR-BASE VOLTAGE V CB (V) COLLECTOR CURRENT I C (mA) 2000. 12. 8 -300 C ob - VCB V CE(sat) ,V BE(sat) - I C COLLECTOR CURRENT I C (A) SATURATION VOLTAGE VCE(sat), V BE(sat) (mV) -10 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) CURRENT GAIN BANDWIDTH PRODUCT f T (MHz) -3 AT IO N SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 1 3 10 30 100 300 1K COLLECTOR-EMITTER VOLTAGE VCE (V) 2/3 KTB772 Pc - Ta 160 16 140 14 POWER DISSIPATION PC (W) DERATING dT(%), I C dT - Ta 120 100 S/b DI SS I 80 PA TI O 60 LIM N 40 ITE LI M D IT ED 20 10 8 6 4 2 0 0 0 50 100 150 CASE TEMPERATURE Ta ( C) 2000. 12. 8 12 Revision No : 2 200 0 50 100 150 200 CASE TEMPERATURE Ta ( C) 3/3