DSA60C150PB
Low Loss and Soft Recovery
High Performance Schottky Diode
Common Cathode
Schottky Diode Gen ²
1 2 3
Part number
DSA60C150PB
Backside: cathode
FAV
F
VV0.8
RRM
30
150
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131031cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA60C150PB
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
0.93
R0.85 K/
W
R
min.
30
V
RSM
V
450T = 25°C
VJ
T = °C
VJ
m
A
5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
150
P
tot
175
W
T = 25°C
C
RK/
W
30
150
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.09
T = 25°C
VJ
125
V
F0
V
0.55T = °C
VJ
175
r
F
6m
Ω
V
0.80T = °C
VJ
I = A
F
V
30
0.98
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
µ
A
125
V
RRM
V
150
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
289
j
unction capacitance V = V12 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
390
A
150
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
150
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20131031cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA60C150PB
Ratings
XXXXXX
Zyyww
Logo
Part Number
Date Code
Lot #
abcdef
Product Markin
g
A
ssembly Line
D
S
A
60
C
150
PB
Part number
Diode
Schottky Diode
low VF
Common Cathode
TO-220AB (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm0.6
mounting torque 0.4
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g2
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 35 A
per terminal
150-55
TO-220
Similar Part Package Voltage class
DSA50C150HB TO-247AD (3) 150
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DSA60C150PB 509198Tube 50DSA60C150PBStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.55
mΩ
V
0 max
R
0 max
slope resistance * 2.8
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Schottky
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131031cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA60C150PB
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 2.54 BSC 0.100 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
3x b2
E
ØP
Q
D
L1
L
3x b 2x e C
A2
H1
A1
A
123
4
1 2 3
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions. 20131031cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA60C150PB
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
10
100
0 50 100 150
0.0001
0.001
0.01
0.1
1
10
0 102030405060
0
10
20
30
40
50
60
0.001 0.01 0.1 1 10
0.01
0.1
1
04080120160
0
10
20
30
40
50
60
70
0 50 100 150
10
100
1000
T
VJ
=175°C
150°C
125°C
100°C
25°C
T
VJ
=
175°C
125°C
25°C
T
VJ
= 25°C
d=0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
50°C
75°C
I
F
[A]
V
F
[V]
I
R
[mA]
V
R
[V] V
R
[V]
C
T
[pF]
T
C
[°C] I
F(AV)
[A]
P
(AV)
[W]
Z
thJC
[K/W]
t[s]
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4 Average forward current
I
F(AV)
vs. case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
I
F(AV)
[A]
DC
iR
thi
[K/W] t
i
[s]
1 0.02326 0.0005
20.1539 0.011
30.2031 0.072
40.3892 0.34
50.08053 1.5
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20131031cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
