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NPN General
Purpose Amplifier
Features
Electrical Characteristics @ 25qC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(IC=1.0mAdc, IB=0)
40 Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=10PAdc, IE=0)
60 Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=10PAdc, IC=0)
6.0 Vdc
ICBO Collector Cut-off Current
(VCB=30Vdc, IE=0)
50 nAdc
IEBO Emitter Cut-off Current
(VEB=5Vdc, IC=0)
50 nAdc
ON CHARACTERISTICS
hFE DC Current Gain*
(IC=0.1mAdc, VCE=1.0Vdc)
(IC=1.0mAdc, VCE=1.0Vdc)
(IC=10mAdc, VCE=1.0Vdc)
(IC=50mAdc, VCE=1.0Vdc)
(IC=100mAdc, VCE=1.0Vdc)
40
70
100
60
30
300
VCE(sat) Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
0.2
0.3
Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
0.65 0.85
0.95
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Current Gain-Bandwidth Product
(IC=10mAdc, VCE=20Vdc, f=100MHz) 300
MHz
Cobo Output Capacitance
(VCB=5.0Vdec, IE=0, f=1.0MHz) 4.0 pF
NF Noise Figure
(IC=100PAdc, VCE=5.0Vdc, RS=1.0k:
f=1MHz)
5.0 dB
SWITCHING CHARACTERISTICS
td Delay Time 35 ns
tr Rise Time
(VCC=3.0Vdc, VBE=0.5Vdc
IC=10mAdc, IB1=1.0mAdc) 35 ns
ts Storage Time 200 ns
tf Fall Time
(VCC=3.0Vdc, IC=10mAdc
IB1=IB2=1.0mAdc) 50 ns
omponents
20736 Marilla Street Chatsworth
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MCC
SOT-523
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .059 .067 1.50 1.70
B .030 .033 0.75 0.85
C .057 .069 1.45 1.75
D .020 Nominal 0.50Nominal
E .035 .043 0.90 1.10
G .000 .004 .000 .100
H .028 .031 .70 0.80
J .004 .008 .100 .200
K .010 .014 .25 .35
A
C
B
D
E
GH
DIMENSIONS
K
Revision: A 2011/01/01
TM
Micro Commercial Components
E
B
C
MMBT3904T
xOperatingand Storage JunctionTemperatures:-55ćto 150ć
150mW
www.mccsemi.com
• Collector Current: 0.2A
• Marking: 1N
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
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