K3010PG - Temic Semiconductors

K3010P(G) Series

TELEFUNKEN Semiconductors

Rev . A2, 12-Dec-97 1 (11)

Optocoupler with Phototriac Output

Description

The K3010P(G) series consists of a phototransistor

optically coupled to a gallium arsenide infrared-emitting

diode in a 6-lead plastic dual inline package.

The elements are mounted on one leadframe using a

coplanar technique, providing a fixed distance between

input and output for highest safety requirements.

95 10531 95 10532

Applications

Circuits for safe protective separation against electrical

shock according to safety class II (reinforced isolation):

For application class I – IV at mains voltage ≤ 300 V

For application class I – III at mains voltage ≤ 600 V

according to VDE 0884, table 2, suitable for:

Monitors, air conditioners, line switches, solid

state relays, microwaves.

These couplers perform safety functions according to the

the following equipment standards:

VDE 0884

Optocoupler providing protective separation

VDE 0804

Telecommunication apparatus and data processing

VDE 0805/IEC 950/EN 60950

Office machines (applied for reinforced isolation for

mains voltage ≤ 400 VRMS)

VDE 0860/IEC 65

Safety for mains operated electronic and related

household apparatus

Pin Connection

654

A (+) C (–) nc

95 10812

Note: Pin 5 must not be connected

K3010P(G) Series

TELEFUNKEN Semiconductors

Rev . A2, 12-Dec-97

2 (11)

Features

Approvals:

BSI: BS EN 41003, BS EN 60065 (BS 415)

BS EN 60950 (BS 7002)

Certificate number 7081 and 7402

FIMKO (SETI): EN 60950

Certificate number 41400

Underwriters Laboratory (UL) 1577

recognized-file No. E-76222

VDE 0884 Certificate number 94778

VDE 0884 related features:

Rated impulse voltage (transient overvoltage)

VIOTM = 6 kV peak

Isolation test voltage (partial discharge test voltage)

Vpd = 1.6 kV

Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS (848 V peak)

Rated recurring peak voltage (repetitive)

VIORM = 600 VRMS

Creepage current resistance according to

VDE 0303/IEC 112

Comparative Tracking Index: CTI = 275

Thickness through insulation ≥ 0.75 mm

General features:

Isolation materials according to UL94-VO

Pollution degree 2

(DIN/VDE 0110 part 1 resp. IEC 664)

Climatic classification 55/100/21 (IEC 68 part 1)

Special construction:

Therefore extra low coupling capacity

typical 0.2 pF, high Common Mode Rejection

IFT offered in 3 groups

Coupling System C

Absolute Maximum Ratings

Input (Emitter)

Parameters Test Conditions Type Symbol Value Unit

Reverse voltage VR5 V

Forward current IF80 mA

Forward surge current tp ≤ 10

s IFSM 3 A

Power dissipation Tamb ≤ 25°C Pv100 mW

Junction temperature Tj100 °C

Output (Detector)

Parameters Test Conditions Type Symbol Value Unit

Off state output

terminal voltage K3010P(G)

K3011P(G)

K3012P(G) VDRM 250 V

On state RMS current ITRMS 100 mA

Peak surge current,

non-repetitive tp ≤ 10 ms ITMS 1.5 A

Power dissipation Tamb ≤ 25°C Pv300 mW

Junction temperature Tj100 °C

Coupler

Parameters Test Conditions Type Symbol Value Unit

Isolation test voltage (RMS) VIO 1) 3.75 kV

Total power

dissipation Tamb ≤ 25°C Ptot 350 mW

Ambient temperature range Tamb –40 to +85 °C

Storage temperature range Tstg –55 to +100 °C

Soldering temperature 2 mm from case, t ≤ 10 s Tsd 260 °C

K3010P(G) Series

TELEFUNKEN Semiconductors

Rev . A2, 12-Dec-97 3 (11)

1) Related to standard climate 23/50 DIN 50014

K3010P(G) Series

TELEFUNKEN Semiconductors

Rev . A2, 12-Dec-97

4 (11)

Maximum Safety Ratings 2) (according to VDE 0884)

Input (Emitter)

Parameters Test Conditions Symbol Value Unit

Forward current Isi 130 mA

Output (Detector)

Parameters Test Conditions Symbol Value Unit

Power dissipation Tamb ≤ 25°C Psi 600 mW

Coupler

Parameters Test Conditions Symbol Value Unit

Rated impulse voltage VIOTM 6 kV

Safety temperature Tsi 150 °C

2) This device is used for protective separation against electrical shock only within the maximum safety ratings.

This must be ensured by using protective circuits in the applications.

Derating Diagram

150

225

300

375

450

525

600

675

0 25 50 75 100 125 150

Tamb ( °C )95 10925

Psi (mW)

Isi (mA)

K3010P(G) Series

TELEFUNKEN Semiconductors

Rev . A2, 12-Dec-97 5 (11)

Electrical Characteristics

Tamb = 25°C

Input (Emitter)

Parameters Test Conditions Type Symbol Min. Typ. Max. Unit

Forward voltage IF = 50 mA VF1.25 1.6 V

Junction capacitance VR = 0,

f = 1 MHz Cj50 pF

Output (Detector)

Parameters Test Conditions Type Symbol Min. Typ. Max. Unit

Forward peak

off-state voltage

(repetitive)

IDRM = 100 nA K3010P(G)

K3011P(G)

K3012P(G) VDRM 3) 250 V

Peak on-state

voltage ITM = 100 mA VTM 1.5 3 V

Critical rate of rise

of off-state voltage,

(see test circuit)

IFT = 0

IFT = 30 mA (dv/dt)cr

(dv/dt)crq 0.1 10

0.2 V/

Coupler

Parameters Test Conditions Type Symbol Min. Typ. Max. Unit

AC isolation test

voltage (RMS) f = 50 Hz, t = 1 s VIO 4) 3.75 kV

Emitting diode

trigger current VS = 3 V,

RL = 150

K3010P(G)

K3011P(G)

K3012P(G)

IFT 8

Holding current IF = 10 mA,

VS ≥ 3 V IH100

3) Test voltage must be applied within dv/dt ratings

4) Related to standard climate 23/50 DIN 50014

K3010P(G) Series

TELEFUNKEN Semiconductors

Rev . A2, 12-Dec-97

6 (11)

IFT

95 10813

Test condition:

dv/dtcr

VS = 2/3 VDRM

(Sine wave)

RL= 33 k

dv/dtcrq

Veff = 30 V

(Sine wave)

RL = 2 k

Figure 1. Test circuit for dv/dtcr and dv/dtcrq

IFT

IF = 0

dv / dt crq

95 10814

dv / dt cr

dv/dtcr Highest value of the “rate of rise of off-state voltage” which does not cause any switching from the

off-state to the on-state

dv/dtcr Highest value of the “rate of rise of commutating voltage” which does not switch on the device again,

after the voltage has decreased to zero and the trigger current is switched from I FT to zero

Figure 2.

Application

95 10815

270

TTL

+5 V

0.1

FVAC ~

Galvanical separation

Figure 3. Motor control circuit

K3010P(G) Series

TELEFUNKEN Semiconductors

Rev . A2, 12-Dec-97 7 (11)

Insulation Rated Parameters (according to VDE 0884)

Parameters Test Conditions Symbol Min. Typ. Max. Unit

Partial discharge

tt lt

Routine test 100%, ttest = 1 s Vpd 1.6 kV

test voltage VIOTM 6 kV

Lot test

(sample test) tTr = 10 s,

ttest = 60 ssee

(see figure 4)

Vpd 1.3 kV

VIO = 500 V RIO 1012

Insulation resis- VIO = 500 V,

Tamb = 100°C RIO 1011

tance VIO = 500 V,

Tamb = 150°C

(construction test only)

RIO 109

VIOTM

VPd

VIOWM

VIORM

t3ttest

tstres

13930

tTr = 60 s

t1, t2= 1 to 10 s

t3, t4= 1 s

ttest = 10 s

tstres = 12 s

Figure 4. Test pulse for sample test according DIN VDE 0884

K3010P(G) Series

TELEFUNKEN Semiconductors

Rev . A2, 12-Dec-97

8 (11)

Typical Characteristics (Tamb = 25°C, unless otherwise specified)

100

200

300

400

0 20406080100

P – Total Power Dissipation ( mW )

Tamb – Ambient Temperature ( °C )96 11701

tot

Coupled device

Phototransistor

IR-diode

Figure 5. Total Power Dissipation vs. Ambient Temperature

0.1

1.0

10.0

100.0

1000.0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF – Forward Voltage ( V )96 11862

I – Forward Current ( mA )

Figure 6. Forward Current vs. Forward Voltage

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

–30 –20 –10 0 10 20 30 40 50 60 70 80

Tamb – Ambient Temperature ( °C )96 11922

VS=3V

RL=150

I – Relative Threshold Forward Current

FTrel

Figure 7. Rel. Thresh. Forw. Current vs. Ambient Temperature

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

–30 –20 –10 0 10 20 30 40 50 60 70 80

Tamb – Ambient Temperature ( °C )96 11923

V – Relative On–State Voltage

TMrel

IFT

IT=100mA

Figure 8. Rel. On-State vs. Ambient Temperature

100

20 30 40 50 60 70 80 90 100

Tamb – Ambient Temperature ( °C )96 11924

VDR=100V

IF=0

I – Off–State Current ( nA )

DRM

Figure 9. Off-State Current vs. Ambient Temperature

–250

–200

–150

–100

–50

100

150

200

250

–2.5–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5

VTM – On–State Voltage ( V )96 11925

I – On–State Current ( mA )

IFT=15mA

Figure 10. On-state Current vs. On-State Voltage

K3010P(G) Series

TELEFUNKEN Semiconductors

Rev . A2, 12-Dec-97 9 (11)

Dimensions in mm

Leadform 10.16. mm (G-type)

14771

weight: ca. 0.50 g

creeping distance:

8 mm

air path:

8 mm

after mounting on PC board

K3010P(G) Series

TELEFUNKEN Semiconductors

Rev . A2, 12-Dec-97

10 (11)

Dimensions in mm

14770

weight: 0.50 g

creeping distance:

6 mm

air path:

6 mm

after mounting on PC board

K3010P(G) Series

TELEFUNKEN Semiconductors

Rev . A2, 12-Dec-97 11 (11)

Ozone Depleting Substances Policy Statement

It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems

with respect to their impact on the health and safety of our employees and the public, as well as their impact on

the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of

continuous improvements to eliminate the use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain

such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized

application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,

directly or indirectly, any claim of personal damage, injury or death associated with such unintended or

unauthorized use.

TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423