2SA2206 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2206 Power Amplifier Applications Power Switching Applications Unit: mm Low collector emitter saturation voltage : VCE (sat) = -0.5 V (max) (IC = -1A) High-speed switching: tstg = 300 ns (typ.) Complementary to 2SC6124 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -7 V DC IC -2 A Pulse ICP -4 A IB -0.5 A PC 2.5 Collector current (Note 1) Base current Collector power dissipation (Note 2) Junction temperature Storage temperature range t = 10 s DC W PC 1 Tj 150 C Tstg -55 to 150 C 1: BASE 2: COLLECTOR (HEAT SINK) 3: EMITTER JEDEC JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: Ensure that the junction temperature does not exceed 150C during use of the device. Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2007-03 1 2018-01-09 2SA2206 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit Collector cut-off current ICBO VCB = -80 V, IE = 0 A -100 nA Emitter cut-off current IEBO VEB = -7 V, IC = 0 A -100 nA V (BR) CEO IC = -10 mA, IB = 0 A -80 V hFE (1) VCE = -2 V, IC = -1 mA 80 hFE (2) VCE = -2 V, IC = -0.5 A 100 200 hFE (3) VCE = -2 V, IC = -1 A 60 VCE (sat) (1) IC = -0.5 A, IB = -50 mA -0.3 V VCE (sat) (2) IC = -1 A, IB = -100 mA -0.5 V VBE (sat) IC = -1 A, IB = -100 mA -1.5 V VCB = -10 V, IE = 0 A, f = 1MHZ 25 pF VCE = -2 V, IC = -500 mA 100 MHz 30 300 40 Collector emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Cob Transition frequency fT Rise time 20 s tr 0 Storage time tstg IB1 = IB2 = 100 mA Fall time tf IB1 Output IB2 IB1 Switching time Input 24 DC current gain IB2 Collector-emitter breakdown voltage ns VCC -24 V Duty cycle 1% Marking Part No. (or abbreviation code) 4 Lot code K Note 4 Note 4: A line beside a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2018-01-09 2SA2206 IC - VCE hFE - IC -2 1000 -100 -50 Ta=100C -1.6 hFE -10 -1.2 -8 -0.8 -6 -4 -0.4 25C 100 DC current gain Collector current IC (A) -20 -55C 10 Common emitter Ta = 25C Single Pulse test IB=-2mA Common emitter VCE = -2 V Single Pulse test 1 0 0 -0.4 -0.8 -1.2 -1.6 Collector-emitter voltage VCE -2 -0.001 (V) -0.01 (A) -10 Common emitter IC/IB = 10 Single Pulse test Base -emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) IC -10 VBE (sat) - IC -1 Ta=100C -0.1 25C -55C -0.01 -0.001 Common emitter IC/IB = 10 Single Pulse test -3 -55C -1 Ta=100C 25C -0.3 -0.1 -0.001 -0.01 -0.1 -1 Collector current IC -0.001 -10 -0.01 -0.1 -1 Collector current (A) IC - VBE IC -10 (A) fT- IC 1000 -2 fT (MHz) Common emitter VCE = -2 V Single Pulse test -1.6 IC (A) -1 Collector current VCE (sat) - IC Common emitter Ta = 25C Single Pulse test -10 100 -5 -1.2 Transition frequency Collector current -0.1 25C Ta=100C -0.8 -55C -0.4 VCE=-2V 10 1 0 0 -0.3 -0.6 -0.9 Base-emitter voltage -1.2 VBE -0.001 -1.5 (V) -0.01 -0.1 Collector current 3 -1 IC -10 (A) 2018-01-09 2SA2206 rth - tw PC (W) PC - Ta Collector power dissipation Transient thermal impedance rth (C/W) 1000 100 10 Curves apply only to limited areas of thermal resistance. Single pulse test Ta = 25C Device mounted on a 25.4 mm x 25.4 mm x 1.6 mm FR-4 glass epoxy board (with a dissipating copper surface of 645 mm2) 1.2 Device mounted on a 25.4 mm x 25.4 mm x 1.6 mm FR-4 glass epoxy board (with a dissipating copper surface of 645 mm2) 1 0.8 0.6 0.4 0.2 1 0.01 0.001 0.1 1 Pulse width 10 tw 1000 100 0 0 (s) 50 100 150 200 Ambient temperature Ta (C) Safe Operating Area Cob - VCB Ta=25C IE=0A f=1MHz 10 ms* IC max. (pulsed)* 1 ms* 100s* 10s* 100 ms* IC max. (continuous) -1 (A) 100 DC operation Ta=25C IC Collector current Collector output capacitance Cob (pF) 1000 -10 10 1 -0.1 -1 Collector-base voltage -10 VCB -0.1 -0.01 -100 (V) * Single pulse Ta = 25C Note that the curves for 100 ms*, DC operation will be different when the devices aren't mounted on an FR-4 board (glass-epoxy; 25.4 mm x 25.4 mm x 1.6 mm,; Cu area, 645 mm2) These characteristic curves must be derated linearly with increase in temperature. VCEO max -0.001 -0.1 -1 Collector-emitter voltage 4 -10 -100 VCE (V) 2018-01-09 2SA2206 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". * TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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