2SA2206
2018-01-09
1
TOSHIBA T ransistor Silicon PNP Epitaxial Type
2SA2206
Power Amplifier Ap plications
Power Switching Applic at ions
Low collector emitter saturation voltage
: VCE (sat) = -0.5 V (max) (IC = -1A)
High-speed switching: tstg = 300 ns (typ.)
Complementary to 2SC6124
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO -80 V
Collector-emitter voltage VCEO -80 V
Emitter-base voltage VEBO -7 V
Collector current (Note 1) DC IC -2 A
Pulse ICP -4 A
Base current IB -0.5 A
Collector power dissipation
(Note 2)
t = 10 s PC 2.5 W
DC PC 1
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note 1: Ensure that the junction temperature does not exceed 150°C during use of the device.
Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)
Note : Using continuously under heavy loads ( e.g. the application of high temperature/curr ent/voltage and the
significant c hange in temperature, et c.) may cause this product to decrease in the reliabi lity significantl y even
if the operati ng conditions (i.e. oper ating temperature/ current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon revie wing t he Toshiba Semiconductor Reliability Hand book
(“Handling Precautions”/“Derating Concept and Methods”) and i ndi vidual reliability data (i.e. reliability te s t
report and estimated failure rate, etc).
Unit
: mm
JEDEC ―
JEITA SC-62
TOSHIBA 2-5K1A
Weight: 0.05 g (typ.)
1:
BASE
2:
COLLECTOR (HEAT SINK)
3:
EMITTER
Start of commercial production
2007-
03
2SA2206
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Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Conditions Min Typ. Max Unit
Collector cut-off current ICBO VCB = -80 V, IE = 0 A ― ― -100 nA
Emitter cut-off current IEBO VEB = -7 V, IC = 0 A ― ― -100 nA
Collector-emitter breakdown voltage V (BR) CEO IC = -10 mA, IB = 0 A -80 ― ― V
DC current gain
hFE (1) VCE = -2 V, IC = -1 mA 80 ― ―
hFE (2) VCE = -2 V, IC = -0.5 A 100 ― 200
hFE (3) VCE = -2 V, IC = -1 A 60 ― ―
Collector emitter saturation voltage VCE (sat) (1) IC = -0.5 A, IB = -50 mA ― ― -0.3 V
VCE (sat) (2) IC = -1 A, IB = -100 mA ― ― -0.5 V
Base-emitter saturation voltage VBE (sat) IC = -1 A, IB = -100 mA ― ― -1.5 V
Collector output capacitance Cob VCB = -10 V, IE = 0 A, f = 1MHZ ― 25 ― pF
Transition frequency fT VCE = -2 V, IC = -500 mA ― 100 ― MHz
Switching time
Rise time tr
IB1 = IB2 = 100 mA
Duty cycle ≤ 1%
― 30 ―
ns
Storage time tstg ― 300 ―
Fall time tf ― 40 ―
Marking
Note 4: A line beside a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales r epresentative for details as to env i r onmental matters such as the R oH S
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
4 K
Part No. (or abbreviation code)
Lot code
Note 4
IB1
20 μs
V
CC
≈ -24 V
Output
24Ω
IB2
IB1
Input
IB2
0
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Base -emitter saturation voltage
VBE (sat) (V)
-0.1
-1
-10
Collector current I
C
(A)
V
BE
(sat)
– I
C
-0.001 -0.01
-0.1 -1 -10
Common emitter
IC/IB = 10
Single Pulse test
−55°C
Ta=100°C
25°C
-0.3
-3
IC – VBE
Collector current IC (A)
Base-emitter voltage V
BE
(V)
0 -0.3
-0.6 -1.2 -0.9
-2
0
-0.4
-0.8
Common emitter
VCE = -2 V
Single Pulse test
Ta=100°C
−55°C
25°C
-1.2
-1.6
-1.5
Collector current IC (A)
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
-2
0
0
-2
-0.4
-0.4
-0.8 -1.2
-1.6
-0.8
-1.2
-1.6
Common emitter
Ta = 25°C
Single Pulse test
-50
-20
-10
-8
-6
-4
IB=-2mA
-100
DC current gain hFE
hFE – IC
1
100
1000
-0.001 -0.01
-0.1 -1 -10
Collector current I
C
(A)
Common emitter
VCE = -2 V
Single Pulse test
−55°C
25°C
Ta=100°C
10
-1
-0.001
-0.01
-0.1
Collector current I
C
(A)
Collector-emitter saturation voltage
VCE (sat) (V)
V
CE
(sat)
– I
C
-0.001 -0.01
-0.1 -1 -10
Common emitter
IC/IB = 10
Single Pulse test
−55°C
25°C
Ta=100°C
1000
1
10
100
Collector current I
C
(A)
Transition frequency f
T
(MHz)
f
T
– I
C
-0.001 -0.01
-0.1 -1 -10
Common emitter
Ta = 25°C
Single Pulse test
VCE=-2V
-5
-10
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Collector
output capacitance
Cob (pF)
Cob – VCB
1
100
1000
-0.1 -1
-10 -100
Collector-base voltage V
CB
(V)
10
Ta=25°C
IE=0A
f=1MHz
Transient thermal impedance
rth (°C/W)
10
100
0.001
0.01
0.1 1 100
10 1000
Pulse width t
w
(s)
rth – tw
1000
1
Curves apply only to limited areas of thermal resi stance.
Single pulse test Ta = 25°C
Device mounted on a 25.4 mm x 25.4 mm x 1.6 mm
FR-4 glass epoxy board (with a dissipating copper
surface of 645 mm2)
Collector power dissipation
P
C
(W)
P
C
– Ta
0
0
1
0.4
0.6
0.2
0.8
50 100
150
200
1.2
Ambient temperature Ta (°C)
Device mounted on a 25.4 mm x 25.4
mm x 1.6 mm
FR-4 glass epoxy board
(with a dissipating copper surface of
645 mm2)
Collector current I
C (A)
Safe Operating Area
Collector-emitter voltage V
CE
(V)
-0.1 -10 -100
-1
-0.001
-0.01
-0.1
-10
VCEO max
-1
100 ms*
10 ms*
1 ms*
100μs*
10μs*
IC max. (continuous)
IC max. (pulsed)*
DC operation
Ta=25°C
* Single pulse Ta = 25°C
Note that the curves for 100 ms*, DC
operation will be different when the
devices aren't mounted on an FR-4
board
(glass-epoxy; 25.4 mm × 25.4 mm ×
1.6 mm,; Cu area, 645 mm2)
These characteristic curves must be
derated linearly with increase in
temperature.
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