1. Product profile
1.1 General description
PNP medium power transistor in a Surface-Mounted Device (SMD) plastic package.
[1] /DG: halogen-free
1.2 Features
nHigh current
nThree current gain selections
n1.4 W total power dissipation
nMedium power SMD plastic package
1.3 Applications
nLinear voltage regulators
nHigh-side switches
nSupply line switches
nMOSFET drivers
nAudio preamplifier
1.4 Quick reference data
BCP69
20 V, 1 A PNP medium power transistor
Rev. 06 — 2 December 2008 Product data sheet
Table 1. Product overview
Type number[1] Package Package
configuration
NXP JEITA
BCP69 SOT223 SC-73 medium power
BCP69-16
BCP69-16/DG
BCP69-16/IN
BCP69-25
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - −20 V
ICcollector current - - −1A
ICM peak collector current single pulse;
tp≤1ms --−2A
BCP69_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 2 December 2008 2 of 13
NXP Semiconductors BCP69
20 V, 1 A PNP medium power transistor
2. Pinning information
3. Ordering information
[1] /DG: halogen-free
hFE DC current gain VCE =−1V;
IC=−500 mA
BCP69 85 - 375
BCP69-16
BCP69-16/DG 100 - 250
BCP69-16/IN 140 - 230
BCP69-25 160 - 375
Table 2. Quick reference data
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 base
2 collector
3 emitter
4 collector 132
4
sym028
2, 4
3
1
Table 4. Ordering information
Type number[1] Package
Name Description Version
BCP69 SC-73 plastic surface-mounted package with increased
heatsink; 4 leads SOT223
BCP69-16
BCP69-16/DG
BCP69-16/IN
BCP69-25
BCP69_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 2 December 2008 3 of 13
NXP Semiconductors BCP69
20 V, 1 A PNP medium power transistor
4. Marking
[1] /DG: halogen-free
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
Table 5. Marking codes
Type number[1] Marking code
BCP69 BCP69
BCP69-16 BCP69/16
BCP69-16/DG BCP69-16D
BCP69-16/IN 69-16N
BCP69-25 BCP69/25
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - −32 V
VCEO collector-emitter voltage open base - −20 V
VEBO emitter-base voltage open collector - −5V
ICcollector current - −1A
ICM peak collector current single pulse;
tp≤1ms -−2A
IBM peak base current single pulse;
tp≤1ms -−200 mA
Ptot total power dissipation Tamb ≤25 °C[1] - 0.625 W
[2] -1W
[3] - 1.4 W
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
BCP69_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 2 December 2008 4 of 13
NXP Semiconductors BCP69
20 V, 1 A PNP medium power transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
−65 −5Tamb (°C)
Ptot
(W)
55 175
1.6
1.2
0.4
0
0.8
115
mle311
(1)
(2)
(3)
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction
to ambient in free air [1] - - 200 K/W
[2] - - 125 K/W
[3] --89K/W
Rth(j-sp) thermal resistance from junction
to solder point --15K/W
BCP69_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 2 December 2008 5 of 13
NXP Semiconductors BCP69
20 V, 1 A PNP medium power transistor
FR4 PCB, mounting pad for collector 6 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab402
10−51010−2
10−4102
10−1tp (s)
10−3103
1
10
1
102
Rth(j-a)
(K/W)
10−1
t1
t1
t2
P
t
t2
δ =
duty cycle = 1 0.75
0.5 0.33
0.2 0.1
0.05 0.02
0.01
0
BCP69_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 2 December 2008 6 of 13
NXP Semiconductors BCP69
20 V, 1 A PNP medium power transistor
7. Characteristics
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB =−25 V; IE=0A - - −100 nA
VCB =−25 V; IE=0A;
Tj= 150 °C--−10 µA
IEBO emitter-base cut-off
current VEB =−5 V; IC=0A - - −100 nA
hFE DC current gain
BCP69 VCE =−10 V;
IC=−5mA 50 - -
VCE =−1V;
IC=−500 mA 85 - 375
VCE =−1 V; IC=−1A 60 - -
BCP69-16
BCP69-16/DG VCE =−1V;
IC=−500 mA 100 - 250
BCP69-16/IN VCE =−1V;
IC=−500 mA 140 - 230
BCP69-25 VCE =−1V;
IC=−500 mA 160 - 375
VCEsat collector-emitter
saturation voltage IC=−1A;
IB=−100 mA --−500 mV
VBE base-emitter voltage VCE =−10 V;
IC=−5mA --−700 mV
VCE =−1 V; IC=−1A - - −1V
Cccollector capacitance VCB =−10 V;
IE=i
e=0A;
f=1MHz
-28-pF
fTtransition frequency VCE =−5V;
IC=−50 mA;
f = 100 MHz
40 140 - MHz
BCP69_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 2 December 2008 7 of 13
NXP Semiconductors BCP69
20 V, 1 A PNP medium power transistor
VCE =−1V T
amb =25°C
Fig 3. BCP69-16: DC current gain as a function of
collector current; typical values Fig 4. BCP69-16: Collector current as a function of
collector-emitter voltage; typical values
VCE =−1V I
C/IB=10
Fig 5. BCP69-16: Base-emitter voltage as a function
of collector current; typical values Fig 6. BCP69-16: Collector-emittersaturationvoltage
as a function of collector current; typical
values
mle305
102
103
−10−1−1−10 −102−103−104
IC (mA)
hFE
006aab403
0
IC
(A)
VCE (V)
−2.4
−1.6
−2.0
−0.8
−1.2
−0.4
0−1−5
−2−3−4
IB (mA) = −18.0 −16.2
−3.6
−5.4
−7.2
−9.0
−14.4 −12.6
−10.8
−1.8
mle304
−400
−600
−200
−800
−1000
VBE
(mV)
0
IC (mA)
−10−1−104
−103
−1−102
−10
mle306
−10
−103
−102
−10−1−1−10 IC (mA)
VCEsat
(mV)
−102−103−104
−1
BCP69_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 2 December 2008 8 of 13
NXP Semiconductors BCP69
20 V, 1 A PNP medium power transistor
VCE =−1V T
amb =25°C
Fig 7. BCP69-25: DC current gain as a function of
collector current; typical values Fig 8. BCP69-25: Collector current as a function of
collector-emitter voltage; typical values
VCE =−1V I
C/IB=10
Fig 9. BCP69-25: Base-emitter voltage as a function
of collector current; typical values Fig 10. BCP69-25: Collector-emittersaturationvoltage
as a function of collector current; typical
values
mle309
102
103
−10−1−1−10 −102−103−104
IC (mA)
hFE
006aab404
0
IC
(A)
VCE (V)
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
0−1−5
−2−3−4
IB (mA) = −12.0 −10.8
−2.4
−3.6
−4.8
−6.0
−1.2
−9.6 −8.4
−7.2
mle304
−400
−600
−200
−800
−1000
VBE
(mV)
0
IC (mA)
−10−1−104
−103
−1−102
−10
mle310
−102
−103
−10
−1
−10−1IC (mA)
VCEsat
(mV)
−102−103−104
−10−1
BCP69_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 2 December 2008 9 of 13
NXP Semiconductors BCP69
20 V, 1 A PNP medium power transistor
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 13.
[2] /DG: halogen-free
Fig 11. Package outline SOT223 (SC-73)
04-11-10Dimensions in mm
6.7
6.3
3.1
2.9
1.8
1.5
7.3
6.7 3.7
3.3
1.1
0.7
132
4
4.6
2.3 0.8
0.6 0.32
0.22
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number[2] Package Description Packing quantity
1000 4000
BCP69 SOT223 8 mm pitch, 12 mm tape and reel -115 -135
BCP69-16
BCP69-16/DG
BCP69-16/IN
BCP69-25
BCP69_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 2 December 2008 10 of 13
NXP Semiconductors BCP69
20 V, 1 A PNP medium power transistor
10. Soldering
Fig 12. Reflow soldering footprint SOT223 (SC-73)
Fig 13. Wave soldering footprint SOT223 (SC-73)
sot223_fr
1.2
(4×)
1.2
(3×)
1.3
(4×)
1.3
(3×)
6.15
7
3.85
3.6
3.5
0.3
3.9 7.65
2.3 2.3
6.1
4
231
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
sot223_fw
1.9
6.7
8.9
8.7
1.9
(3×)
1.9
(2×)
1.1
6.2
2.7 2.7
2
4
31
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
BCP69_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 2 December 2008 11 of 13
NXP Semiconductors BCP69
20 V, 1 A PNP medium power transistor
11. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BCP69_6 20081202 Product data sheet - BCP69_5
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Table 1 “Product overview”: enhanced
•Table 4 “Ordering information”: enhanced
•Figure 2,4 and 8: updated
•Figure 11: superseded by minimized package outline drawing
•Section 9 “Packing information”: added
•Section 10 “Soldering”: enhanced
•Section 12 “Legal information”: updated
BCP69_5 20031125 Product specification - BCP69_4
BCP69_4 20021115 Product specification - BCP69_3
BCP69_3 19990408 Product specification - BCP69_CNV_2
BCP69_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 2 December 2008 12 of 13
NXP Semiconductors BCP69
20 V, 1 A PNP medium power transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BCP69
20 V, 1 A PNP medium power transistor
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 December 2008
Document identifier: BCP69_6
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
