TGA4544-SM
26 31 GHz 1W Power Amplifier
Datasheet: Rev D 03-10-17
- 1 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
RFMD + TriQuint = Qorvo
Applications
Point-to-Point Radio
Ka-band Sat-Com
26 lead 5x5mm ACQFN package
Product Features
Frequency Range: 26 31 GHz
Power: 32 dBm Psat, 31 dBm P1dB
Gain: 23 dB
TOI: 41 dBm at 20 dBm/tone
Integrated Power Detector
Bias: Vd = 6 V, Idq = 1100 mA, Vg = -0.58 V
Typical
Package Dimensions: 5.0 x 5.0 x 1.3 mm
Functional Block Diagram
Pin Configuration
Label
1, 2, 4, 5, 6, 12, 13, 14,
15, 17, 18, 19, 26
GND
3
RF IN
7, 25
VG1
8, 24
VG23
9, 23
VD12
10, 22
VD3
11
NC
16
RFOUT
20
VDET
21
VREF
General Description
The TriQuint TGA4544-SM is a Ka-Band Power
Amplifier with integrated power detector. The
TGA4544-SM operates from 26 31 GHz and is
designed using TriQuint’s power pHEMT production
process.
The TGA4544-SM typically provides 32 dBm of
saturated output power with small signal gain of 23
dB. Third Order Intercept is 41 dBm at 20 dBm SCL.
The TGA4544-SM is available in a low-cost, surface
mount 26 lead 5x5 ACQFN package and is ideally
suited for Point-to-Point Radio.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Ordering Information
Part No.
ECCN
Description
TGA4544-SM
3A001.b.2.d
26 31 GHz 1W Power
Amplifier
Standard T/R size = 200 pieces on a 7” reel
TriQuint
TGA4544
1406 MAL
ACS368
TGA4544-SM
26 31 GHz 1W Power Amplifier
Datasheet: Rev D 03-10-17
- 2 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
RFMD + TriQuint = Qorvo
Recommended Operating
Conditions
Parameter
Min
Typ
Max
Units
Operating Temp. Range
-40
+85
°C
Vd
6.0
V
Idq
1100
mA
Id_drive
1536
mA
Vg
-0.58
V
Ig_drive (Under RF Drive)
12
mA
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Absolute Maximum Ratings
Parameter
Rating
Drain Voltage,Vd
6.5 V
Gate Voltage,Vg
-3.5 to 0 V
Drain to Gate Voltage, Vd Vg
10 V
Drain Current, Id
2.5 A
Gate Current, Ig
-7 to +52 mA
Power Dissipation, Pdiss
16.2 W
RF Input Power, CW, T = 25 °C
25 dBm
Channel Temperature, Tch
200 °C
Mounting Temperature (30 sec)
260 °C
Storage Temperature
-40 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: Vd =+6 V, Idq = 1100 mA, Vg =-0.58 V, Temp= +25°C, Z0 = 50 Ω
Parameter
Conditions
Min
Typ
Max
Units
Operational Frequency Range
26
31
GHz
Gain
23
dB
Input Return Loss
8
dB
Output Return Loss
10
dB
Output Power @ Saturation
32
dBm
Output Power @ 1 dB Gain Compression
31
dBm
Output TOI @ 20 dBm/Tone Pout/tone
41
dBm
Gain Temperature Coefficient
-0.03
dB/°C
Power Temperature Coefficient
-0.01
dBm/°C
TGA4544-SM
26 31 GHz 1W Power Amplifier
Datasheet: Rev D 03-10-17
- 3 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
RFMD + TriQuint = Qorvo
Specifications
Thermal and Reliability Information
Parameter
Conditions
Rating
Thermal Resistance, θJC, measured to back of package
Tbase = 85 °C
θJC = 10 °C/W
Channel Temperature (Tch), and Median Lifetime (Tm)
Tbase = 85 °C
Vd = 6 V Id = 1100 mA
Pdiss = 6.6 W
Tch = 151 °C
Tm = 9.3E+5 Hours
1.0E+04
1.0E+05
1.0E+06
1.0E+07
1.0E+08
1.0E+09
1.0E+10
1.0E+11
1.0E+12
1.0E+13
1.0E+14
1.0E+15
25 50 75 100 125 150 175 200
Median Lifetime, Tm (Hours)
Channel Temperature, Tch C)
Median Lifetime (Tm) vs. Channel Temperature (Tch)
FET5
TGA4544-SM
26 31 GHz 1W Power Amplifier
Datasheet: Rev D 03-10-17
- 4 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
RFMD + TriQuint = Qorvo
-25
-20
-15
-10
-5
0
5
10
15
10
12
14
16
18
20
22
24
26
24 25 26 27 28 29 30 31 32 33 34 35 36
Return Loss (dB)
Gain (dB)
Frequency (GHz)
S-Parameters vs. Frequency
Vd = 6 V, Id = 1100 mA, Vg = -0.58 V Typical, +25°C
Gain
IRL
ORL
8
10
12
14
16
18
20
22
24
26
25 25.5 26 26.5 27 27.5 28 28.5 29 29.5 30 30.5 31
Gain (dB)
Frequency (GHz)
Gain vs. Frequency vs. Bias
Vd = 5 - 6 V, Id = 900 - 1300 mA, Vg = -0.58V Typical
5V 1100mA
6V 900mA
6V 1100mA
6V 1300mA
24
25
26
27
28
29
30
31
32
33
34
25 26 27 28 29 30 31
Output Power (dBm)
Frequency (GHz)
Output Power vs. Frequency
Vd = 6 V, Id = 1100 mA, Vg = -0.58V Typical
Pmax
P1dB
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
10
12
14
16
18
20
22
24
26
28
30
32
34
-12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12
Current (mA)
Output Power (dBm)
Input Power (dBm)
Pout, Gain, Id vs. Pin @ 28GHz
Vd = 6 V, Id = 1100 mA, Vg = -0.58V Typical
Pout
Gain
Id
24
25
26
27
28
29
30
31
32
33
34
25 26 27 28 29 30 31
Psat (dBm)
Frequency (GHz)
Psat vs. Frequency vs. Bias
Vd = 5 - 6 V, Id = 900 - 1300 mA, Vg = -0.58V Typical
5V 1100mA
6V 900mA
6V 1100mA
6V 1300mA
24
25
26
27
28
29
30
31
32
33
34
25 26 27 28 29 30 31
P1dB (dBm)
Frequency (GHz)
P1dB vs. Frequency vs. Bias
Vd = 5 - 6 V, Id = 900 - 1300 mA, Vg = -0.58V Typical
5V 1100mA
6V 900mA
6V 1100mA
6V 1300mA
Typical Performance
TGA4544-SM
26 31 GHz 1W Power Amplifier
Datasheet: Rev D 03-10-17
- 5 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
RFMD + TriQuint = Qorvo
0.01
0.1
1
10
0 5 10 15 20 25 30 35
Vdiff (V) = VREF -VDET
Out Power (dBm)
Power Detector vs. Pout vs. Bias @ 28GHz
Vd = 5 - 6 V, Id = 900 - 1300 mA, Vg = -0.58V Typical
5V 1100mA
6V 900mA
6V 1100mA
6V 1300mA
28
30
32
34
36
38
40
42
44
25 26 27 28 29 30 31
Output TOI (dBm)
Frequency (GHz)
Output TOI vs. Frequency
Vd = 6 V, Id = 1100 mA, Vg = -0.58V Typical, 25°C
Pout/Tone = 17 dBm
Pout/Tone = 19 dBm
Pout/Tone = 21 dBm
Pout/Tone = 22 dBm
28
30
32
34
36
38
40
42
44
25 26 27 28 29 30 31
OTOI @ 20 dBm Pout/Tone (dBm)
Frequency (GHz)
Output TOI vs. Frequency vs. Bias
Vd = 5 - 6 V, Id = 900 - 1300 mA, Vg = -0.58V Typical
5V 1100mA
6V 900mA
6V 1100mA
6V 1300mA
-90
-80
-70
-60
-50
-40
-30
-20
-10
12 14 16 18 20 22 24 26 28
IMD3 and IMD5 (dBc)
Pout/Tone (dBm)
IMD3 and IMD5 vs. Pout/Tone vs. Frequency
Vd = 6 V, Id = 1100 mA, Vg = -0.58V Typical, 25°C
IMD3 27GHz
IMD3 28GHz
IMD3 29GHz
IMD3 30GHz
IMD5 27GHz
IMD5 28GHz
IMD5 29GHz
IMD5 30GHz
2
3
4
5
6
7
8
25 26 27 28 29 30 31
Noise Figure (dB)
Frequency (GHz)
Noise vs. Frequency vs. Bias
Vd = 5 - 6 V, Id = 900 - 1300 mA, Vg = -0.58V Typical
5V 1100mA
6V 900mA
6V 1100mA
6V 1300mA
Typical Performance
TGA4544-SM
26 31 GHz 1W Power Amplifier
Datasheet: Rev D 03-10-17
- 6 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
RFMD + TriQuint = Qorvo
8
10
12
14
16
18
20
22
24
26
28
25 26 27 28 29 30 31
Gain (dB)
Frequency (GHz)
Gain vs. Frequency vs. Temperature
Vd = 6V, Id = 1100mA, Vg = -0.58V Typical
+85°C
+25°C
-40°C
24
25
26
27
28
29
30
31
32
33
34
25 26 27 28 29 30 31
Psat (dBm)
Frequency (GHz)
Psat vs. Frequency vs. Temperature
Vd = 6V, Id = 1100mA, Vg = -0.58V Typical
+85°C
+25°C
-40°C
24
25
26
27
28
29
30
31
32
33
34
25 26 27 28 29 30 31
P1dB (dBm)
Frequency (GHz)
P1dB vs. Frequency vs. Temperature
Vd = 6V, Id = 1100mA, Vg = -0.58V Typical
+85°C
+25°C
-40°C
28
30
32
34
36
38
40
42
44
46
25 26 27 28 29 30 31
Output TOI (dBm)
Frequency (GHz)
Output TOI vs. Frequency vs. Temperature
Vd = 6V, Id = 1100mA, Vg = -0.58V Typical
+85°C
+25°C
-40°C
20 dBm Pout/Tone
0.01
0.1
1
10
0 5 10 15 20 25 30 35
Vdiff (V) = VREF -VDET
Output Power (dBm)
Power Detector vs. Pout vs. Temperature
Vd = 6V, Id = 1100mA, Vg = -0.58V Typical
+85°C
+25°C
-40°C
Typical Performance
TGA4544-SM
26 31 GHz 1W Power Amplifier
Datasheet: Rev D 03-10-17
- 7 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
RFMD + TriQuint = Qorvo
Pin Configuration and Description
Pin No.
Label
Description
1, 5, 6, 13 14, 18, 19, 26
GND
Must be connected to Ground
2, 4, 15, 17, 27
GND
Backside paddle. Multiple vias should be employed to
minimize inductance and thermal resistance; see ‘PCB
Mounting Pattern’ on page 11 for suggested footprint
3
RF IN
RF input, matched to 50 ohms
7, 25
VG1
Stage 1 gate voltage (1)
8, 24
VG23
Stage 2 and 3 gate voltage (1)
9, 23
VD12
Stage 1 and 2 drain voltage
10, 22
VD3
Stage 3 drain voltage
11
NC
No internal connection; Can be grounded on PCB or left
open
12
GND
Internally connected to GND. Can be grounded on the PCB
or left open
16
RF OUT
RF output, matched to 50 ohms
20
VDET
Detector diode output voltage. Varies with RF output power
21
VREF
Reference diode output voltage
(1) Bias bypass network is required; see Application Circuit on page 8 as an example.
TGA4544-SM
26 31 GHz 1W Power Amplifier
Datasheet: Rev D 03-10-17
- 8 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
RFMD + TriQuint = Qorvo
Application Circuit
Vd can be biased from either side (pin 9, 10 or pin 21, 22)
Bias-up Procedure
Bias-down Procedure
Vg set to -1.5 V
Turn off RF supply
Vd set to +6 V
Reduce Vg to -1.5 V. Ensure Id ~ 0 mA
Adjust Vg more positive until quiescent Id is 1100 mA.
This will be ~ Vg = -0.58 V typical
Turn Vd to 0 V
Apply RF signal to RF Input
Turn Vg to 0 V
TGA4544-SM
26 31 GHz 1W Power Amplifier
Datasheet: Rev D 03-10-17
- 9 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
RFMD + TriQuint = Qorvo
Application Circuit
PC Board Layout
Board material is Rogers Corp. 4003 0.008” thickness with ½ oz copper cladding.
For further technical information, refer to the TGA4544-SM Product Information page.
Bill of Material
Ref Des
Value
Description
Manufacturer
U1
Ka Band Power Amplifier
TriQuint
TGA4544-SM
C1, C2
DNP
C3 thru C6
100.0 pF
Cap, 0402, 20V, 5%, COG
various
C7 thru C10
1.0 µF
Cap, 0603/0805, 25V, 5%, COG
various
C11 thru C14
10.0 µF
Cap, 0805, 25V, COG
various
C1
C6
C2 C3 C4
C5
C7 C8
C9 C10
C11 C12
C13 C14
R2
R1
R3 R4
Vd12 Vd3 Vref Vdet
Vg1 Vg23
R5
R6
U1
TGA4544-SM
26 31 GHz 1W Power Amplifier
Datasheet: Rev D 03-10-17
- 10 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
RFMD + TriQuint = Qorvo
R1 thru R6
0 Ω
Res. 0402, 1/16 W, 5% SMT
various
Mechanical Information
Package Marking and Dimensions
All dimensions are in millimeters.
The TGA4544-SM will be marked with the “YYWW” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the year the part was manufactured, the “WW” is the work week, the “CCCC” is the country
code, the “Aa” is the vendor, and the “XXXX” is the last 4 digit of lot number.
This package is lead-free/RoHS-compliant with a copper alloy base (CDA194), and the plating material on the leads is NiPdAu.
It is compatible with lead-free (maximum 260 °C reflow temperature) soldering process.
TriQuint
TGA4544
YYWW CCCC
AaXXXX
TGA4544-SM
26 31 GHz 1W Power Amplifier
Datasheet: Rev D 03-10-17
- 11 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
RFMD + TriQuint = Qorvo
Mechanical Information
PCB Mounting Pattern
Notes:
1. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB
land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary
from company to company, careful process development is recommended.
2. Ground vias are critical for the proper performance of this device. Vias have a final plated thru diameter of .25 mm
(.010”).
RFin RFout
TGA4544-SM
26 31 GHz 1W Power Amplifier
Datasheet: Rev D 03-10-17
- 12 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
RFMD + TriQuint = Qorvo
Tape and Reel Information
Standard T/R size = 200 pieces on a 7” reel
Vendor: Tek-Pak P/N QFN0500x0500F-L500
CARRIER AND COVER TAPE DIMENSIONS
Part
Feature
Symbol
Size (in)
Size (mm)
Cavity
Length
A0
0.209
5.3
Width
B0
0.209
5.3
Depth
K0
0.064
1.65
Pitch
P1
0.315
8.00
Cover Tape
Width
C
0.362
9.2
Carrier Tape
Width
W
0.472
12.00
TGA4544-SM
26 31 GHz 1W Power Amplifier
Datasheet: Rev D 03-10-17
- 13 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
RFMD + TriQuint = Qorvo
Product Compliance Information
ESD Sensitivity Ratings
Caution! ESD-Sensitive Device
ESD Rating: Class 1A
Value: Passed ≥ 300 V min.
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
Solderability
Compatible with lead-free (260°C maximum reflow
temperature).
Package lead plating: NiPdAu.
The use of no-clean solder to avoid washing after
soldering is recommended.
This package is not compatible with solder
containing lead.
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain
Hazardous Substances in Electrical and Electronic
Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
MSL Rating
MSL Rating: Level 3
Test: 260°C convection reflow
Standard: JEDEC Standard IPC/JEDEC J-STD-020
Recommended Solder Temperature Profile
TGA4544-SM
26 31 GHz 1W Power Amplifier
Datasheet: Rev D 03-10-17
- 14 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
RFMD + TriQuint = Qorvo
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.triquint.com Tel: 1-844-890-8163
Email: customer.support@qorvo.com
For information about the merger of RFMD and TriQuint as Qorvo:
Web: www.qorvo.com
For technical questions and application information: Email: info-networks@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein.
The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated
with such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-
sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.