2N1711
SILICON
NPN TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N1711 is a silicon
NPN epitaxial planar transistor designed for small signal
general purpose switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCER 50 V
Emitter-Base Voltage VEBO 7.0 V
Continuous Collector Current IC 500 mA
Power Dissipation (TC=25°C) PD 3.0 W
Power Dissipation PD 0.8 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=60V 10 nA
IEBO V
EB=5.0V 5.0 nA
BVCBO I
C=100µA 75 V
BVCER I
C=10mA, RBE=10 50 V
BVEBO I
E=100µA 7.0 V
VCE(SAT) I
C=150mA, IB=15mA 1.5 V
VBE(SAT) I
C=150mA, IB=15mA 1.3 V
hFE V
CE=10V, IC=10A 20
hFE V
CE=10V, IC=100A 35
hFE V
CE=10V, IC=10mA 75
hFE V
CE=10V, IC=150mA 100 300
hFE V
CE=10V, IC=500mA 40
fT V
CE=10V, IC=50mA, f=20MHz 70 MHz
Cob V
CB=10V, IE=0, f=100kHz 25 pF
Cib V
EB=0.5V, IC=0, f=100kHz 80 pF
NF V
CE=10V, IC=300A, f=1.0kHz 8.0 dB
TO-39 CASE
R1 (23-April 2013)
www.centralsemi.com
2N1711
SILICON
NPN TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
www.centralsemi.com
R1 (23-April 2013)
