5082-3001/02 z PIN DIODES FOR te HEWLETT jhiy PACKARD RE SWITCHING AND | 222% COMPONENTS ATTENUATING | S223 5082-3168 /88 il 1 Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE LOW CAPACITANCE LOW TEMPERATURE COEFFICIENT Typically Less Than 20% Resistance Change from 25C to 100C Description / Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. The 5082-3168/3188 are optimized for VHF/UHF bandswitching. The RF resistance of a PIN diode is a function of the current flowing in the diode. These current controlled resistors are specified for use in control applications such as variabie RF attenuators, automatic gain control circuits, RF modula- tors, electrically tuned filters, analog phase shifters, and RF limiters. Package Dimensions Mechanical Specifications The HP Outline 15 package has a glass hermetic seal with Maximum Ratings at Tease=25C dumet leads. The leads on the Outline 15 package should be Junction Operating and Storage restricted so that the bend starts at least 1/16 inch (1.6mm) Temperature Range ..............06. -65C to+150C from the glass body. With this restriction, Outline 15 Operation of these devices within the above package will meet MIL-STD-750, Method 2036, Conditions temperature ratings will assure a device A (4 lbs., |1.8 kg.], tension for 30 minutes) and E. The Mean Time Between Failure (MTBF) of maximum soldering temperature is 230 C for five seconds. approximately 1 x 10 hours. Typical package inductance and capacitance are 2.5 nH Power Dissipation .........:ce eee eee ence eee 250mWwW and 0.13pF, respectively. Marking is by digital coding witha (Derate linearly to zero at 150C) cathode band. Peak Inverse Voltage (PIV) .......... 2c eee eee eee VerGeneral Purpose Diodes Electrical Specifications at T,=25C Note: Typical CW power switching capability for a shunt switch in a 502 system is 2.5W. RF Current Controlled Resistor Diodes Electrical Specifications at T,=25C *The 1N5767 has the additional specifications: 4 u 1.0 psec minimum IR = 14A maximum at VR = 50V < a H 1V maximum at IF = 100mA. 126Typical Parameters Figure 1. Typical Forward Current vs. Forward Voltage. Figure 5. Typical RF Resistance vs. Forward Bias Current. Figure 6. Typical Capacitance vs. Reverse Voltage. ae ou Hse Bi Se Wy 127Typical Parameters (continued) Figure 7. Typical Capacitance vs. Reverse Voltage 5082-3080, Figure 8. Typical Reverse Recovery Time vs. Forward Current for 3081, 3168, 3188. Various Reverse Driving Voltages, 5082-3042, 3043. Figure 9. Typical Reverse Recovery Time vs. Forward Current Figure 10. Typical Second Order Intermodulation Distortion. for Various Reverse Driving Voitages. Figure 11. Typical Cross Modulation Distortion. 128