Silicon NPN Transistor Features: * * * * High-power Continuous collector current-IC = 30 A High DC current gain-hFE = 25-100 at IC = 7.5 A Excellent safe operating area : VCE(sat) = 0.8 V (Maximum) at IC = 75 A, IB = 750 mA Applications: For use as an output device in complementary audio amplifiers to 100 watts music power per channel TO-3 Dimension Pin 1. Base 2. Emitter Collector (Case) Millimetres Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.2 26.67 F 0.92 1.09 G 1.38 1.62 H 29.9 30.4 I 16.64 17.3 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres Maximum Ratings Characteristic Symbol Rating Unit Collector - base voltage VCBO 100 V Collector - emitter voltage VCER 100 V Collector - emitter voltage VCEO 90 V Emitter - base voltage VEBO 4 V Collector current - continuous IC 30 A Base current - continuous IB 7.5 A Total power dissipation at TC = 25C Derate above 25C PD 200 1.14 W W/C TJ , TSTG -65 to +200 C Operating and storage junction temperature range www.element14.com www.farnell.com www.newark.com Page <1> 12/12/11 V1.1 Silicon NPN Transistor Thermal Characteristics Characteristic Symbol Maximum Unit Thermal resistance junction to case Rjc 0.875 C/W PD, Power Dissipation (Watts) Figure-1 Power Derating TC, Temperature (C) Electrical Characteristics (TC = 25C Unless Otherwise Noted) Characteristic Symbol Minimum Maximum Unit OFF Characteristics Collector - emitter sustaining voltage (1) (IC = 200 mA, IB = 0) VCEO (SUS) 90 - V BVCER 100 - V Collector cut off current (VCB = 100 V, IE = 0) (VCB = 100 V, IE = 0, TC = 150C) ICBO - 1 5 mA Emitter cut off current (VEB = 4 V, IC = 0) IEBO - 1 mA hFE 25 100 - Collector - emitter saturation voltage (IC = 7.5 A, IB = 0.75 A) VCE (sat) - 0.8 V Base - emitter saturation voltage (IC = 7.5 A, IB = 0.75 A) VCE (sat) Base - emitter on voltage (IC = 7.5 A, VCE = 2 V) VBE (on) Collector - emitter breakdown voltage (1) (IC = 0.2 A, VBE (off) = 1.5 V, RBE = 100 Ohms) ON Characteristics (1) DC current gain (IC = 7.5 A, VCE = 2 V) 1.3 - 1.3 V Dynamic Characteristics Current - gain bandwidth product (IC = 1 A, VCE = 10 V, f = 1 MHz) fT 2 - MHz (1) Pulse Test : Pulse width = 300 s, duty cycle 2% www.element14.com www.farnell.com www.newark.com Page <2> 12/12/11 V1.1 Silicon NPN Transistor "ON" Voltage V Voltage (Volts) hFE Normalized Current Gain DC Current Gain IC, Collector Current (Amperes) IC, Collector Current (Amperes) IC, Collector Current (Amperes) Active - Region Safe Operating area (SOA) The safe operating area curves indicate IC-VCE limits belos which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable safe area to avoid causing a cata-strophic failure. To insure operating below the maximum TJ power-temperature derating must be observed for both steady state and pulse power conditions IC, Collector Emitter Voltage (Volts) Part Number Table Description Part Number High-Power NPN Silicon Transistor MJ802 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2011. www.element14.com www.farnell.com www.newark.com Page <3> 12/12/11 V1.1