Silicon NPN Transistor
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Features:
•High-power
•Continuous collector current-IC= 30 A
•High DC current gain-hFE = 25-100 at IC= 7.5 A
• Excellent safe operating area : VCE(sat) = 0.8 V (Maximum) at IC= 75 A, IB = 750 mA
Applications:
For use as an output device in complementary audio amplifiers to 100 watts music power
per channel
TO-3
Pin 1. Base
2. Emitter
Collector (Case)
Dimension Millimetres
Minimum Maximum
A 38.75 39.96
B 19.28 22.23
C 7.96 9.28
D 11.18 12.19
E 25.2 26.67
F 0.92 1.09
G 1.38 1.62
H 29.9 30.4
I 16.64 17.3
J 3.88 4.36
K 10.67 11.18
Dimensions : Millimetres
Maximum Ratings
Characteristic Symbol Rating Unit
Collector - base voltage VCBO 100 V
Collector - emitter voltage VCER 100 V
Collector - emitter voltage VCEO 90 V
Emitter - base voltage VEBO 4 V
Collector current - continuous IC30 A
Base current - continuous IB7.5 A
Total power dissipation at TC = 25°C
Derate above 25°C PD200
1.14
W
W/°C
Operating and storage junction
temperature range TJ ,T
STG -65 to +200 °C
Silicon NPN Transistor
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Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal resistance junction to case Rθjc 0.875 °C/W
TC, Temperature (°C)
PD, Power Dissipation (Watts)
Figure-1 Power Derating
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector - emitter sustaining voltage (1)
(IC= 200 mA, IB= 0) VCEO (SUS) 90 - V
Collector - emitter breakdown voltage (1)
(IC= 0.2 A, VBE (off) = 1.5 V, RBE = 100 Ohms) BVCER 100 - V
Collector cut off current
(VCB = 100 V, IE= 0)
(VCB = 100 V, IE= 0, TC = 150°C)
ICBO -1
5mA
Emitter cut off current
(VEB = 4 V, IC= 0) IEBO - 1 mA
ON Characteristics (1)
DC current gain
(IC= 7.5 A, VCE = 2 V) hFE 25 100 -
Collector - emitter saturation voltage
(IC= 7.5 A, IB= 0.75 A) VCE (sat) - 0.8 V
Base - emitter saturation voltage
(IC= 7.5 A, IB= 0.75 A) VCE (sat) 1.3
Base - emitter on voltage
(IC= 7.5 A, VCE = 2 V) VBE (on) - 1.3 V
Dynamic Characteristics
Current - gain bandwidth product
(IC= 1 A, VCE = 10 V, f = 1 MHz) fT2 - MHz
Electrical Characteristics (TC= 25°C Unless Otherwise Noted)
(1) Pulse Test : Pulse width = 300 µs, duty cycle ≤2%
Silicon NPN Transistor
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Description Part Number
High-Power NPN Silicon Transistor MJ802
Part Number Table
Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of
it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces
all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use
made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted.
Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising)
is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2011.
Active - Region Safe Operating area (SOA)
IC, Collector Current (Amperes)
hFE Normalized Current Gain
DC Current Gain
IC, Collector Emitter Voltage (Volts)
“ON” Voltage
IC, Collector Current (Amperes)
IC, Collector Current (Amperes)
V Voltage (Volts)
The safe operating area curves indicate IC-VCE limits
belos which the device will not enter secondary break-
down. Collector load lines for specific circuits must fall
within the applicable safe area to avoid causing a
cata-strophic failure. To insure operating below the
maximum TJpower-temperature derating must be
observed for both steady state and pulse power
conditions
