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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encap sulate Transistors
2SA1585E TRANSISTOR
DESCRIPTION
PNP Epitaxial planar type Silicon Transistor
FEATURES
Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)
APPLICATION
Excellent current gain characteristics
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:AEQ, AER, AES
C
AEQ
B E
MAXIMUM RATINGS TA=25℃ unless otherw ise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -20 V
VCEO Collector-Emitter Voltage -20 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -2 A
PC Collector Power Dissipation 150 mW
Tj Junction Temperature 150 ℃
Tstg Storage Temperature Range -55-150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -50µA , IE=0 -20 V
Collector-emitter breakdown voltage V(BR)CEO I
C= -1mA , IB=0 -20 V
Emitter-base breakdown voltage V(BR)EBO IE=- 50µA, IC=0 -6 V
Collector cut-off current ICBO V
CB=-20V , IE=0 -0.1
µA
Emitter cut-off current IEBO V
EB= -5V , IC=0 -0.1
µA
DC current gain hFE V
CE=-2 V, IC= -0.1A 120 560
Collector-emitter saturation voltage VCEsat I
C= -2A, IB=-0.1A -0.5 V
Transition frequency fT VCE=-2V, IC=-0.5A
f=100MHz 240 MHz
Collector output capacitance Cobo VCB=-10V,IE=0,f=1MHz 35 pF
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR
CLASSIFICATION OF hFE
Rank Q R S
Range 120-270 180-390 270-560
Typical Characteristics 2SA1585E
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.010 0.090 0.000 0.004
b 0.230 0.330 0.009 0.013
b1
D 1.550 1.650 0.061 0.065
E 1.550 1.650 0.061 0.065
D2
E2
e
L
L1
L2
L3
L4
k
z 0.320 RE F. 0.013 REF.
0.160 RE F. 0.006 REF.
Symbol D imensions In M illimeters D imensions In Inches
1.000 TYP. 0.040 TYP.
0.750 REF.
1.000 RE F. 0.030 REF.
0.040 REF.
0.320 REF. 0.013 REF.
0.230 REF.
0.180 REF.
0.280 RE F. 0.011 REF.
0.250 REF.
0.200 REF.
0.009 REF.
0.007 REF.
0.010 REF.
0.008 REF.
