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Bipolar Transistor
Maximum Ratings:
Characteristic Symbol Rating Unit
Collector-Base Voltage VCB 45
V
Collector-Emitter Voltage VCEO
Emitter-Base Voltage VEB 5
Collector Current -Continuous IC4
A
Base Current IB1
Collector Power Dissipation (TC = +25°C),
Derate Above 25°C PD
40
0.32
W
W/°C
Operating Junction Temperature Range TJ
-65 to +150 °C
Storage Temperature Range Tstg
Thermal Resistance, Junction-to-Case RthJC 3.125 °C/W
Description:
A Silicon epitaxial PNP transistor in a standard TO-220 type package
designed for use in general-purpose amplier and switching applications.
Pin Conguration:
1. Emitter
2. Base
3. Collector
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Page <2> V1.023/04/13
Bipolar Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
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Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, PNP, 4A, 45V, TO-220 2N6124
Electrical Characteristics: (TA = +25°C unless otherwise specied)
Parameter Symbol Test Conditions Min Max Unit
Off Characteristics
Collector-Emitter Saturation Voltage VCEO(SUS) IC = 100mA, IB = 0, Note 1 45 - V
Collector Cutoff Current
ICEO VCE = 45V, IB = 0
-
0.1
mA
ICEX VCE = 45V, VBE(off) = 1.5V 2
VCE = 45V, VBE (off)= -1.5V ,TC = +125°C 2
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 1
On Characteristics (Note 1)
DC Current Gain hFE VCE = 2V, IC = 1.5A 25 100
VCE = 2V, IC = 4A 10 -
Collector-Emitter Saturation Voltage VCE(Sat) IC = 4A, IB = 1A -1.4 V
Base-Emitter ON Voltage VBE(on) VCE = 2V, IC = 1.5A 1.2
Dynamic Characteristics
Current Gain - Bandwidth Product fTVCE = 4V, IC = 0.1A, f = 1MHz 2.5 -MHz
Small - signal Current Gain hfe VCB = 2V, IC = 0.1A, f = 1kHz 25
Note:
1. Pulse Test: Pulse Width = 300µs, Duty Cycle %2%
Dim A B C D E F G H J K L M N O
Min. 14.42 9.63 3.65 - 1.15 3.75 2.29 2.54 - 12.7 2.8 2.03 - 7°
Max. 16.51 10.67 4.83 0.9 1.4 3.88 2.79 3.43 0.56 14.73 4.07 2.92 31.24
Dimensions : Millimetres
