SENSITRON
SEMICONDUCTOR
• 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR3030PT-MBR3060PT
Technical Data
Data Sheet 2923, Rev.- MBR3030PT-MBR3060PT
30A SCHOTTKY BARRIER RECTIFIER
Mechanical Data:
•
Case: Molded Plastic
•
Polarity: As Marked on Body
•
Weight: 5.6 grams (approx.)
•
Mounting
Position: Any
•
Marking: Type Number
Features:
• Schottky Barrier Chip
• Guard Ring for Transient Protection
• High Current Capability, Low Forward
• Low Reverse Leakage Current
• High Surge Current Capability
• Plastic Material has UL Flammability Classification 94V-O
Mechanical Dimensions: In Inches / mm
Option C is also available.
To order specifically the option C, please add suffix “–C” to
the part number:
To order specifically the standard option, please add suffix “–
S” to the part number.
If there is no suffix to the part number, the part could come
with either option.
TO-247AD
COMMON
CATHODE
BASE
2
ANODE 1
ANODE 2
3
1
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR3030PT-MBR3060PT
Data Sheet 2923, Rev. -
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol MBR
3030PT MBR
3035PT MBR
3040PT MBR
3045PT MBR
3050PT MBR
3060PT Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 30 35 40 45 50 60 V
RMS Reverse Voltage VR(RMS) 21 24.5 28 31.5 35 42 V
Average Rectified Output Current @TC = 95°C IO 30 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method) IFSM 200 A
Forward Voltage @IF = 20A @TC = 25°C
@IF = 20A @TC = 125°C VFM 0.65
0.60 0.75
0.65 V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C IRM 1.0
60 5.0
100 mA
Typical Junction Capacitance (Note 1) Cj 700 pF
Typical Thermal Resistance Junction to Case (Note 2) RJC 1.4 2.0 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR3030PT-MBR3060PT
Data Sheet 2923, Rev. -
For ward Current Derating Curve
0 25 50 75 100 125 150 175
0
6
12
18
24
30
AMBIENT TEMPERATURE ( C )
FOR WAR D CURR ENT ( A)
SINGLE PHASE
HALF WAVE
60 H Z
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.00mm) LOAD
LENGTHS
º
MBR3035PT-MBR3045PT
MBR3050PT-MBR3060PT
T ran sient Thermal Impedance
0.01 0.1 1 10 100
0.1
1
10
100
T. PU LSE DURATION (se c. )
TRA NS IEN T THER MA L I MP EDANC E ( C/W )
º
Non -Repetit ive Su rge Cu rrent
12 51020 50100
0
50
100
150
200
250
300
N UMBE R OF CY CL ES AT 6 0Hz
PEAK FORWARD SURGE CURRENT (A)
Typical Junction Capacitance
0.1 1 10 100
100
200
500
1000
2000
5000
REVERSE VOLTAGE (V)
JUNCT ION CA PA CITAN C E (pF)
MBR3035PT-MBR3045PT
MBR3050PT-MBR3060PT
Forward Charac t eristi cs
0 0.2 0.4 0.6 0.8 1 1.2
0.01
0.1
1
10
50
FOR WAR D VOL TA GE (V )
FOR WAR D CURR ENT ( A)
Pulse Widt h = 300µ
µµ
µS
2% Duty Cycl e
T = 25 C
º
A
T = 150 C
º
A
MBR3035PT-MBR3045PT
MBR3050PT-MBR3060PT
Reverse Charact eri stics
0 20406080100120140
0.001
0.01
0.1
1
10
50
PER CE NT OF R ATED PEA K RE VER SE VOLTAGE (%)
REVERSE CU RRENT (mA)
T = 25 C
º
A
T = 75 C
º
A
T = 125 C
º
A
MBR3035PT-MBR3045PT
MBR3050PT-MBR3060PT
MBR3050PT-MBR3060PT
MBR3035PT-MBR3045PT
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that ma y result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
