Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LM2733 SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 LM2733 0.6 and 1.6-MHz Boost Converters With 40-V Internal FET Switch in SOT-23 1 Features 3 Description * * * * * * * * * * The LM2733 switching regulators are current-mode boost converters operating fixed frequency of 1.6 MHz ("X" option) and 600 kHz ("Y" option). 1 40-V DMOS FET Switch 1.6 MHz ("X"), 0.6 MHz ("Y") Switching Frequency Low RDS(ON) DMOS FET Switch Current up to 1A Wide Input Voltage Range (2.7 V - 14 V) Low Shutdown Current (< 1 A) 5-Lead SOT-23 Package Uses Tiny Capacitors and Inductors Cycle-by-Cycle Current Limiting Internally Compensated These parts have a logic-level shutdown pin that can be used to reduce quiescent current and extend battery life. Protection is provided through cycle-by-cycle current limiting and thermal shutdown. Internal compensation simplifies design and reduces component count. 2 Applications * * * * * The use of SOT-23 package, made possible by the minimal power loss of the internal 1-A switch, and use of small inductors and capacitors result in the industry's highest power density. The 40-V internal switch makes these solutions perfect for boosting to voltages of 16 V or greater. White LED Current Source PDA's and Palm-Top Computers Digital Cameras Portable Phones and Games Local Boost Regulator Device Information(1) PART NUMBER LM2733 PACKAGE BODY SIZE (NOM) SOT-23 (5) 2.90 mm x 1.60 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. Typical Application Circuit VIN SHDN R3 51K U1 C1 2.2PF SW LM2733 ; SHDN GND GND D1 MBR0520 L1/10PH 5 VIN Efficiency vs. Load Current R1/117K FB R2 13.3K CF 220pF 12V OUT 330mA (TYP) C2 4.7PF 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LM2733 SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 3 6.1 6.2 6.3 6.4 6.5 6.6 3 3 4 4 4 6 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. 7.3 Feature Description................................................. 10 7.4 Device Functional Modes........................................ 11 8 Application and Implementation ........................ 12 8.1 Application Information............................................ 12 8.2 Typical Application .................................................. 12 9 Power Supply Recommendations...................... 18 10 Layout................................................................... 18 10.1 Layout Guidelines ................................................. 18 10.2 Layout Example .................................................... 18 11 Device and Documentation Support ................. 19 Detailed Description ............................................ 10 11.1 Trademarks ........................................................... 19 11.2 Electrostatic Discharge Caution ............................ 19 11.3 Glossary ................................................................ 19 7.1 Overview ................................................................. 10 7.2 Functional Block Diagram ....................................... 10 12 Mechanical, Packaging, and Orderable Information ........................................................... 19 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision E (April 2013) to Revision F * Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1 Changes from Revision D (April 2013) to Revision E * 2 Page Page Changed layout of National Data Sheet to TI format ........................................................................................................... 11 Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 LM2733 www.ti.com SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 5 Pin Configuration and Functions 5-Pin SOT-23 Package Top View Pin Functions PIN NAME NO. I/O DESCRIPTION SW 1 O GND 2 GND Drain of the internal FET switch. FB 3 I Feedback point that connects to external resistive divider. SHDN 4 I Shutdown control input. Connect to VIN if this feature is not used. VIN 5 I Analog and power input. Analog and power ground. 6 Specifications 6.1 Absolute Maximum Ratings (1) (2) MIN MAX UNIT Input Supply Voltage (VIN) -0.4 14.5 V FB Pin Voltage -0.4 6 V SW Pin Voltage -0.4 40 V SHDN Pin Voltage -0.4 VIN + 0.3 V Power Dissipation (3) Internally Limited Lead Temp. (Soldering, 5 sec.) Tstg (1) (2) (3) -65 Storage temperature 300 C 150 C Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device outside of the limits set forth under the operating ratings which specify the intended range of operating conditions. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. The maximum power dissipation which can be safely dissipated for any application is a function of the maximum junction temperature, TJ(MAX) = 125C, the junction-to-ambient thermal resistance for the SOT-23 package, J-A = 265C/W, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature for designs using this device can be calculated using the formula: If power dissipation exceeds the maximum specified above, the internal thermal protection circuitry will protect the device by reducing the output voltage as required to maintain a safe junction temperature. 6.2 ESD Ratings VALUE V(ESD) (1) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins Machine model (1) UNIT 2000 200 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 3 LM2733 SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 www.ti.com 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) Input Supply Voltage (VIN) SHDN Pin Voltage Junction Temperature Range MIN MAX UNIT 2.7 14.0 V 0 VIN V -40 125 C 6.4 Thermal Information LM2733 THERMAL METRIC (1) DBV UNIT 5 PINS RJA Junction-to-ambient thermal resistance 210 RJC(top) Junction-to-case (top) thermal resistance 122 RJB Junction-to-board thermal resistance 38.4 JT Junction-to-top characterization parameter 12.8 JB Junction-to-board characterization parameter 37.5 RJC(bot) Junction-to-case (bottom) thermal resistance n/a (1) C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 6.5 Electrical Characteristics Unless otherwise specified: VIN = 5 V, VSHDN = 5 V, IL = 0A, TJ = 25C. PARAMETER TEST CONDITIONS MIN (1) VIN Input Voltage -40C TJ +125C 2.7 ISW Switch Current Limit See (3) 1.0 RDS(ON) Switch ON Resistance ISW = 100 mA SHDNTH Shutdown Threshold Device ON, -40C TJ +125C TYP (2) 500 Shutdown Pin Bias Current Feedback Pin Reference Voltage VSHDN = 0 0 VSHDN = 5 V 0 1.205 Feedback Pin Bias Current VFB = 1.23 V 60 Quiescent Current VSHDN = 5 V, Switching "X" 2.1 VSHDN = 5 V, Switching "X", -40C TJ +125C VSHDN = 0 (1) (2) (3) 4 2.7 V VIN 14 V A V nA mA 1.1 2 400 VSHDN = 5 V, Not Switching, -40C TJ +125C FB Voltage Line Regulation V 3.0 VSHDN = 5 V, Switching "Y", -40C TJ +125C VFBVIN 0.50 A 1.255 IQ VSHDN = 5 V, Not Switching m 1.230 IFB VSHDN = 5 V, Switching "Y" 650 2 VIN = 3 V VIN = 3 V, -40C TJ +125C V 1.5 VSHDN = 5 V, -40C TJ +125C VFB UNIT 14 1.5 Device OFF, -40C TJ +125C ISHDN MAX (1) 500 0.024 0.02 A 1 %/V Limits are specified by testing, statistical correlation, or design. Typical values are derived from the mean value of a large quantity of samples tested during characterization and represent the most likely expected value of the parameter at room temperature. Switch current limit is dependent on duty cycle (see Typical Performance Characteristics). Limits shown are for duty cycles 50%. Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 LM2733 www.ti.com SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 Electrical Characteristics (continued) Unless otherwise specified: VIN = 5 V, VSHDN = 5 V, IL = 0A, TJ = 25C. PARAMETER FSW Switching Frequency TEST CONDITIONS MIN (1) "X" Option "X" Option, -40C TJ +125C "Y" Option, -40C TJ +125C Maximum Duty Cycle 0.40 "Y" Option, -40C TJ +125C Switch Leakage Not Switching VSW = 5 V UNIT MHz 0.8 93% 87% "Y" Option IL 1.85 0.60 "X" Option "X" Option, -40C TJ +125C MAX (1) 1.6 1.15 "Y" Option DMAX TYP (2) 96% 93% 1 A Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 5 LM2733 SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 www.ti.com 6.6 Typical Characteristics Unless otherwise specified: VIN = 5 V, SHDN pin is tied to VIN. 1.06 1.05 Iq ACTIVE (mA) 1.04 1.03 1.02 1.01 1 0.99 0.98 -50 -25 0 25 50 75 100 125 150 o TEMPERATURE ( C) Figure 2. Iq VIN (Active) vs Temperature - "Y" Figure 1. Iq VIN (Active) vs Temperature - "X" 0.615 OSCILLATOR FREQUENCY (MHz) 0.610 0.605 0.600 0.595 0.590 0.585 0.580 0.575 -50 -25 0 25 50 75 100 125 150 TEMPERATURE (oC) Figure 3. Oscillator Frequency vs Temperature - "X" Figure 4. Oscillator Frequency vs Temperature - "Y" 93.4 96.55 96.5 93.3 93.2 MAX DUTY CYCLE MAX DUTY CYCLE (%) 96.45 93.1 93.0 92.9 96.4 96.35 96.3 96.25 96.2 96.15 92.8 96.1 92.7 -40 96.05 -25 0 25 50 75 100 125 0 25 50 75 100 125 150 TEMPERATURE (oC) TEMPERATURE (oC) Figure 5. Max. Duty Cycle vs Temperature - "X" 6 -50 -25 Figure 6. Max. Duty Cycle vs Temperature - "Y" Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 LM2733 www.ti.com SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 Typical Characteristics (continued) Unless otherwise specified: VIN = 5 V, SHDN pin is tied to VIN. Figure 7. Feedback Voltage vs Temperature Figure 8. RDS(ON) vs Temperature Figure 9. Current Limit vs Temperature Figure 10. RDS(ON) vs VIN 100 90 VIN = 10V EFFICIENCY (%) 80 VIN = 5V 70 60 VIN = 3.3V 50 40 30 20 10 0 0 200 400 600 800 1000 LOAD CURRENT (mA) Figure 11. Efficiency vs Load Current (VOUT = 12 V) - "X" Figure 12. Efficiency vs Load Current (VOUT = 15 V) - "X" Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 7 LM2733 SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 www.ti.com Typical Characteristics (continued) Unless otherwise specified: VIN = 5 V, SHDN pin is tied to VIN. 100 100 90 90 VIN = 10V VIN = 5V 70 VIN = 3.3V 60 VIN = 10V 80 EFFICIENCY (%) EFFICIENCY (%) 80 50 40 70 60 50 40 30 30 20 20 10 10 0 VIN = 5V 0 0 100 200 300 400 500 600 700 0 50 LOAD CURRENT (mA) LOAD CURRENT (mA) Figure 13. Efficiency vs Load Current (VOUT = 20 V) - "X" Figure 14. Efficiency vs Load Current (VOUT = 25 V) - "X" 100 100 90 90 VIN = 10V 80 EFFICIENCY (%) 80 EFFICIENCY (%) 100 150 200 250 300 350 400 70 VIN = 5V 60 50 40 30 VIN = 10V 70 60 50 40 30 20 20 10 10 0 0 50 100 150 200 250 0 300 350 0 LOAD CURRENT (mA) 50 100 150 200 LOAD CURRENT (mA) Figure 15. Efficiency vs Load Current (VOUT = 30 V) - "X" Figure 16. Efficiency vs Load Current (VOUT = 35 V) - "X" 90 80 VIN=10V EFFICIENCY (%) 70 60 50 40 30 20 10 0 0 50 100 150 200 LOAD CURRENT (mA) Figure 17. Efficiency vs Load Current (VOUT = 40 V) - "X" 8 Figure 18. Efficiency vs Load (VOUT = 15 V) - "Y" Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 LM2733 www.ti.com SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 Typical Characteristics (continued) Unless otherwise specified: VIN = 5 V, SHDN pin is tied to VIN. Figure 19. Efficiency vs Load (VOUT = 20 V) - "Y" Figure 20. Efficiency vs Load (VOUT = 25 V) - "Y" Figure 21. Efficiency vs Load (VOUT = 30 V) - "Y" Figure 22. Efficiency vs Load (VOUT = 35 V) - "Y" Figure 23. Efficiency vs Load (VOUT = 40 V) - "Y" Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 9 LM2733 SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 www.ti.com 7 Detailed Description 7.1 Overview The LM2733 device is a switching converter IC that operates at a fixed frequency (0.6 or 1.6 MHz) using currentmode control for fast transient response over a wide input voltage range and incorporate pulse-by-pulse current limiting protection. Because this is current mode control, a 50 m sense resistor in series with the switch FET is used to provide a voltage (which is proportional to the FET current) to both the input of the pulse width modulation (PWM) comparator and the current limit amplifier. At the beginning of each cycle, the S-R latch turns on the FET. As the current through the FET increases, a voltage (proportional to this current) is summed with the ramp coming from the ramp generator and then fed into the input of the PWM comparator. When this voltage exceeds the voltage on the other input (coming from the Gm amplifier), the latch resets and turns the FET off. Since the signal coming from the Gm amplifier is derived from the feedback (which samples the voltage at the output), the action of the PWM comparator constantly sets the correct peak current through the FET to keep the output volatge in regulation. Q1 and Q2 along with R3 - R6 form a bandgap voltage reference used by the IC to hold the output in regulation. The currents flowing through Q1 and Q2 will be equal, and the feedback loop will adjust the regulated output to maintain this. Because of this, the regulated output is always maintained at a voltage level equal to the voltage at the FB node "multiplied up" by the ratio of the output resistive divider. The current limit comparator feeds directly into the flip-flop, that drives the switch FET. If the FET current reaches the limit threshold, the FET is turned off and the cycle terminated until the next clock pulse. The current limit input terminates the pulse regardless of the status of the output of the PWM comparator. 7.2 Functional Block Diagram 7.3 Feature Description 7.3.1 Switching Frequency The LM2733 device is provided with two switching frequencies: the "X" version is typically 1.6 MHz, while the "Y" version is typically 600 kHz. The best frequency for a specific application must be determined based on the tradeoffs involved. See Switching Frequency in the Detailed Design Procedure section. 10 Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 LM2733 www.ti.com SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 7.4 Device Functional Modes 7.4.1 Shutdown Pin Operation The device is turned off by pulling the shutdown pin low. If this function is not going to be used, the pin should be tied directly to VIN. If the SHDN function will be needed, a pull-up resistor must be used to VIN (approximately 50k-100k recommended). The SHDN pin must not be left unterminated. Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 11 LM2733 SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 www.ti.com 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI's customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The LM2733 device is a high frequency switching boost regulator that offers small size and high power conversion efficiency. The "X" version of the part operates at 1.6 MHz switching frequency and the "Y" version at 600 kHz. The LM2733 device targets applications with high output voltages and uses a high voltage FET allowing switch currents up to 1 A. The LM2731 device is similar to the LM2733 device but has a lower voltage FET allowing switch currents up to 1.8 A. 8.2 Typical Application Figure 24. Basic Application Circuit 8.2.1 Design Requirements Table 1. Circuit Configurations Component R1 LM2733-X LM2733-X LM2733-Y Low Voltage 5-12V 330mA typ High Voltage 20V 170mA typ. High Voltage 30V 110mA typ 117K 205K 309K 13.3K R2 13.3K 13.3K Cf 220pF 120pF 82pF D1 MBR0520 MBR0530 MBR0540 8.2.2 Detailed Design Procedure 8.2.2.1 Selecting the External Capacitors The best capacitors for use with the LM2733 device are multi-layer ceramic capacitors. They have the lowest ESR (equivalent series resistance) and highest resonance frequency which makes them optimum for use with high frequency switching converters. When selecting a ceramic capacitor, only X5R and X7R dielectric types should be used. Other types such as Z5U and Y5F have such severe loss of capacitance due to effects of temperature variation and applied voltage, they may provide as little as 20% of rated capacitance in many typical applications. Always consult capacitor manufacturer's data curves before selecting a capacitor. High-quality ceramic capacitors can be obtained from Taiyo-Yuden, AVX, and Murata. 12 Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 LM2733 www.ti.com SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 8.2.2.2 Selecting the Output Capacitor A single ceramic capacitor of value 4.7 F to 10 F will provide sufficient output capacitance for most applications. For output voltages below 10V, a 10 F capacitance is required. If larger amounts of capacitance are desired for improved line support and transient response, tantalum capacitors can be used in parallel with the ceramics. Aluminum electrolytics with ultra low ESR such as Sanyo Oscon can be used, but are usually prohibitively expensive. Typical AI electrolytic capacitors are not suitable for switching frequencies above 500 kHz due to significant ringing and temperature rise due to self-heating from ripple current. An output capacitor with excessive ESR can also reduce phase margin and cause instability. 8.2.2.3 Selecting the Input Capacitor An input capacitor is required to serve as an energy reservoir for the current which must flow into the coil each time the switch turns ON. This capacitor must have extremely low ESR, so ceramic is the best choice. We recommend a nominal value of 2.2 F, but larger values can be used. Since this capacitor reduces the amount of voltage ripple seen at the input pin, it also reduces the amount of EMI passed back along that line to other circuitry. 8.2.2.4 Feed-Forward Compensation Although internally compensated, the feed-forward capacitor Cf is required for stability (see Figure 24). Adding this capacitor puts a zero in the loop response of the converter. Without it, the regulator loop can oscillate. The recommended frequency for the zero fz should be approximately 8 kHz. Cf can be calculated using the formula: Cf = 1 / (2 X X R1 X fz) (1) 8.2.2.5 Selecting Diodes The external diode used in the typical application should be a Schottky diode. If the switch voltage is less than 15 V, a 20 V diode such as the MBR0520 is recommended. If the switch voltage is between 15 V and 25 V, a 30-V diode such as the MBR0530 is recommended. If the switch voltage exceeds 25 V, a 40-V diode such as the MBR0540 should be used. The MBR05XX series of diodes are designed to handle a maximum average current of 0.5 A. For applications exceeding 0.5 A average but less than 1 A, a Microsemi UPS5817 can be used. 8.2.2.6 Setting the Output Voltage The output voltage is set using the external resistors R1 and R2 (see Figure 24). A value of approximately 13.3 k is recommended for R2 to establish a divider current of approximately 92 A. R1 is calculated using the formula: R1 = R2 X (VOUT/1.23 - 1) (2) 8.2.2.7 Switching Frequency The device options provide for two fixed frequency operating conditions 1.6 MHz, and 600 kHz. Chose the operating frequency required noting the following trade-offs: Higher switching frequency means the inductors and capacitors can be made smaller and cheaper for a given output voltage and current. The down side is that efficiency is slightly lower because the fixed switching losses occur more frequently and become a larger percentage of total power loss. EMI is typically worse at higher switching frequencies because more EMI energy will be seen in the higher frequency spectrum where most circuits are more sensitive to such interference. 8.2.2.8 Duty Cycle The maximum duty cycle of the switching regulator determines the maximum boost ratio of output-to-input voltage that the converter can attain in continuous mode of operation. The duty cycle for a given boost application is defined as: VOUT + VDIODE - VIN Duty Cycle = VOUT + VDIODE - VSW (3) This applies for continuous mode operation. Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 13 LM2733 SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 www.ti.com The equation shown for calculating duty cycle incorporates terms for the FET switch voltage and diode forward voltage. The actual duty cycle measured in operation will also be affected slightly by other power losses in the circuit such as wire losses in the inductor, switching losses, and capacitor ripple current losses from self-heating. Therefore, the actual (effective) duty cycle measured may be slightly higher than calculated to compensate for these power losses. A good approximation for effective duty cycle is : DC (eff) = (1 - Efficiency x (VIN/VOUT)) (4) Where the efficiency can be approximated from the curves provided. 8.2.2.9 Inductance Value The first question we are usually asked is: "How small can I make the inductor?" (because they are the largest sized component and usually the most costly). The answer is not simple and involves tradeoffs in performance. Larger inductors mean less inductor ripple current, which typically means less output voltage ripple (for a given size of output capacitor). Larger inductors also mean more load power can be delivered because the energy stored during each switching cycle is: E =L/2 X (lp)2 (5) Where "lp" is the peak inductor current. An important point to observe is that the LM2733 device will limit its switch current based on peak current. This means that since lp (maximum) is fixed, increasing L will increase the maximum amount of power available to the load. Conversely, using too little inductance may limit the amount of load current which can be drawn from the output. Best performance is usually obtained when the converter is operated in "continuous" mode at the load current range of interest, typically giving better load regulation and less output ripple. Continuous operation is defined as not allowing the inductor current to drop to zero during the cycle. It should be noted that all boost converters shift over to discontinuous operation as the output load is reduced far enough, but a larger inductor stays "continuous" over a wider load current range. To better understand these tradeoffs, a typical application circuit (5V to 12V boost with a 10 H inductor) will be analyzed. We will assume: VIN = 5 V, VOUT = 12 V, VDIODE = 0.5 V, VSW = 0.5 V Since the frequency is 1.6 MHz (nominal), the period is approximately 0.625 s. The duty cycle will be 62.5%, which means the ON time of the switch is 0.390 s. It should be noted that when the switch is ON, the voltage across the inductor is approximately 4.5 V. Using the equation: V = L (di/dt) (6) We can then calculate the di/dt rate of the inductor which is found to be 0.45 A/s during the ON time. Using these facts, we can then show what the inductor current will look like during operation: Figure 25. 10-H Inductor Current, 5-V - 12-V Boost (LM2733X) During the 0.390 s ON time, the inductor current ramps up 0.176 A and ramps down an equal amount during the OFF time. This is defined as the inductor "ripple current". It can also be seen that if the load current drops to about 33 mA, the inductor current will begin touching the zero axis which means it will be in discontinuous mode. A similar analysis can be performed on any boost converter, to make sure the ripple current is reasonable and continuous operation will be maintained at the typical load current values. 14 Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 LM2733 www.ti.com SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 8.2.2.10 Maximum Switch Current The maximum FET swtch current available before the current limiter cuts in is dependent on duty cycle of the application. This is illustrated in the graphs below which show both the typical and specified values of switch current for both the "X" and "Y" versions as a function of effective (actual) duty cycle: 1600 1600 SWITCH CURRENT LIMIT (mA) SWITCH CURRENT LIMIT (mA) 1400 VIN = 5V 1200 1000 VIN = 3.3V 800 VIN = 2.7V 600 400 200 0 1400 VIN = 5V 1200 VIN = 3.3V 1000 800 VIN = 2.7V 600 400 200 0 0 20 40 60 80 100 0 20 40 60 80 100 DUTY CYCLE (%) = [1 - EFF*(VIN/VOUT))] DUTY CYCLE (%) = [1 - EFF*(VIN/VOUT))] Figure 26. Switch Current Limit vs Duty Cycle - "X" Figure 27. Switch Current Limit vs Duty Cycle - "Y" 8.2.2.11 Calculating Load Current As shown in the figure which depicts inductor current, the load current is related to the average inductor current by the relation: ILOAD = IIND(AVG) x (1 - DC) (7) Where "DC" is the duty cycle of the application. The switch current can be found by: ISW = IIND(AVG) + 1/2 (IRIPPLE) (8) Inductor ripple current is dependent on inductance, duty cycle, input voltage and frequency: IRIPPLE = DC x (VIN-VSW) / (f x L) (9) combining all terms, we can develop an expression which allows the maximum available load current to be calculated: ILOAD(max) = (1 - DC) x (ISW(max) - DC (VIN - VSW)) 2fL (10) The equation shown to calculate maximum load current takes into account the losses in the inductor or turn-OFF switching losses of the FET and diode. For actual load current in typical applications, we took bench data for various input and output voltages for both the "X" and "Y" versions of the LM2733 device and displayed the maximum load current available for a typical device in graph form: Figure 28. Max. Load Current vs VIN - "X" Figure 29. Max. Load Current vs VIN - "Y" Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 15 LM2733 SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 www.ti.com 8.2.2.12 Design Parameters VSW and ISW The value of the FET "ON" voltage (referred to as VSW in the equations) is dependent on load current. A good approximation can be obtained by multiplying the "ON Resistance" of the FET times the average inductor current. FET on resistance increases at VIN values below 5 V, since the internal N-FET has less gate voltage in this input voltage range (see Typical Characteristics). Above VIN = 5 V, the FET gate voltage is internally clamped to 5 V. The maximum peak switch current the device can deliver is dependent on duty cycle. The minimum value is specified to be > 1 A at duty cycle below 50%. For higher duty cycles, see Typical Characteristics. 8.2.2.13 Thermal Considerations At higher duty cycles, the increased ON time of the FET means the maximum output current will be determined by power dissipation within the LM2733 FET switch. The switch power dissipation from ON-state conduction is calculated by: P(SW) = DC x IIND(AVE)2 x RDSON (11) There will be some switching losses as well, so some derating needs to be applied when calculating IC power dissipation. 8.2.2.14 Minimum Inductance In some applications where the maximum load current is relatively small, it may be advantageous to use the smallest possible inductance value for cost and size savings. The converter will operate in discontinuous mode in such a case. The minimum inductance should be selected such that the inductor (switch) current peak on each cycle does not reach the 1-A current limit maximum. To understand how to do this, an example will be presented. In the example, the LM2733X will be used (nominal switching frequency 1.6 MHz, minimum switching frequency 1.15 MHz). This means the maximum cycle period is the reciprocal of the minimum frequency: TON(max) = 1/1.15M = 0.870 s (12) We will assume the input voltage is 5 V, VOUT = 12 V, VSW = 0.2 V, VDIODE = 0.3 V. The duty cycle is: Duty Cycle = 60.3% Therefore, the maximum switch ON time is 0.524 s. An inductor should be selected with enough inductance to prevent the switch current from reaching 1A in the 0.524 s ON time interval (see below): Figure 30. Discontinuous Design, 5V-12V Boost (LM2733X) The voltage across the inductor during ON time is 4.8V. Minimum inductance value is found by: V = L X dl/dt, L = V X (dt/dl) = 4.8 (0.524/1) = 2.5 H (13) In this case, a 2.7 H inductor could be used assuming it provided at least that much inductance up to the 1A current value. This same analysis can be used to find the minimum inductance for any boost application. Using the slower switching "Y" version requires a higher amount of minimum inductance because of the longer switching period. 8.2.2.15 Inductor Suppliers Some of the recommended suppliers of inductors for this product include, but not limited to are Sumida, Coilcraft, Panasonic, TDK and Murata. When selecting an inductor, make certain that the continuous current rating is high enough to avoid saturation at peak currents. A suitable core type must be used to minimize core (switching) losses, and wire power losses must be considered when selecting the current rating. 16 Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 LM2733 www.ti.com SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 8.2.3 Application Curves Figure 31. Efficiency vs. Load Current (5-12V, X-version) Figure 32. Efficiency vs. Load Current (5-20V X-version) Figure 33. Efficiency vs. Load Current (5 - 30V Y-version) Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 17 LM2733 SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 www.ti.com 9 Power Supply Recommendations The device input voltage range is 2.7 V to 14 V. The voltage on the shutdown pin should not exceed the voltage on the VIN pin. For applications that do not require a shutdown function the shutdown pin may be connected to the VIN pin. In this case a 47-K resistor is recommended to be connected between these pins. 10 Layout 10.1 Layout Guidelines High frequency switching regulators require very careful layout of components in order to get stable operation and low noise. All components must be as close as possible to the LM2733 device. It is recommended that a 4layer PCB be used so that internal ground planes are available. Some additional guidelines to be observed: 1. Keep the path between L1, D1, and C2 extremely short. Parasitic trace inductance in series with D1 and C2 will increase noise and ringing. 2. The feedback components R1, R2 and CF must be kept close to the FB pin of U1 to prevent noise injection on the FB pin trace. 3. If internal ground planes are available (recommended) use vias to connect directly to ground at pin 2 of U1, as well as the negative sides of capacitors C1 and C2. 10.2 Layout Example Figure 34. Recommended PCB Component Layout 18 Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 LM2733 www.ti.com SNVS209F - NOVEMBER 2002 - REVISED DECEMBER 2014 11 Device and Documentation Support 11.1 Trademarks All trademarks are the property of their respective owners. 11.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.3 Glossary SLYZ022 -- TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright (c) 2002-2014, Texas Instruments Incorporated Product Folder Links: LM2733 19 PACKAGE OPTION ADDENDUM www.ti.com 23-Oct-2014 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (C) Device Marking (4/5) LM2733XMF NRND SOT-23 DBV 5 1000 TBD Call TI Call TI -40 to 125 S52A LM2733XMF/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 S52A LM2733XMFX/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 S52A LM2733YMF NRND SOT-23 DBV 5 1000 TBD Call TI Call TI -40 to 125 S52B LM2733YMF/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 S52B LM2733YMFX/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 S52B (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 23-Oct-2014 (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 20-Dec-2016 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) LM2733XMF SOT-23 DBV 5 1000 178.0 8.4 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 3.2 3.2 1.4 4.0 8.0 Q3 LM2733XMF/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 LM2733XMFX/NOPB SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 LM2733YMF SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 LM2733YMF/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 LM2733YMFX/NOPB SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 20-Dec-2016 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM2733XMF SOT-23 DBV 5 1000 210.0 185.0 35.0 LM2733XMF/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LM2733XMFX/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0 LM2733YMF SOT-23 DBV 5 1000 210.0 185.0 35.0 LM2733YMF/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LM2733YMFX/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0 Pack Materials-Page 2 PACKAGE OUTLINE DBV0005A SOT-23 - 1.45 mm max height SCALE 4.000 SMALL OUTLINE TRANSISTOR C 3.0 2.6 1.75 1.45 PIN 1 INDEX AREA 1 0.1 C B A 5 2X 0.95 1.9 1.45 MAX 3.05 2.75 1.9 2 4 0.5 5X 0.3 0.2 3 (1.1) C A B 0.15 TYP 0.00 0.25 GAGE PLANE 8 TYP 0 0.22 TYP 0.08 0.6 TYP 0.3 SEATING PLANE 4214839/C 04/2017 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. Refernce JEDEC MO-178. www.ti.com EXAMPLE BOARD LAYOUT DBV0005A SOT-23 - 1.45 mm max height SMALL OUTLINE TRANSISTOR PKG 5X (1.1) 1 5 5X (0.6) SYMM (1.9) 2 2X (0.95) 3 4 (R0.05) TYP (2.6) LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE:15X SOLDER MASK OPENING METAL SOLDER MASK OPENING METAL UNDER SOLDER MASK EXPOSED METAL EXPOSED METAL 0.07 MIN ARROUND 0.07 MAX ARROUND NON SOLDER MASK DEFINED (PREFERRED) SOLDER MASK DEFINED SOLDER MASK DETAILS 4214839/C 04/2017 NOTES: (continued) 4. Publication IPC-7351 may have alternate designs. 5. Solder mask tolerances between and around signal pads can vary based on board fabrication site. www.ti.com EXAMPLE STENCIL DESIGN DBV0005A SOT-23 - 1.45 mm max height SMALL OUTLINE TRANSISTOR PKG 5X (1.1) 1 5 5X (0.6) SYMM (1.9) 2 2X(0.95) 4 3 (R0.05) TYP (2.6) SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL SCALE:15X 4214839/C 04/2017 NOTES: (continued) 6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 7. Board assembly site may have different recommendations for stencil design. www.ti.com PACKAGE OUTLINE DBV0005A SOT-23 - 1.45 mm max height SCALE 4.000 SMALL OUTLINE TRANSISTOR C 3.0 2.6 1.75 1.45 PIN 1 INDEX AREA 1 0.1 C B A 5 2X 0.95 1.9 1.45 MAX 3.05 2.75 1.9 2 4 0.5 5X 0.3 0.2 3 (1.1) C A B 0.15 TYP 0.00 0.25 GAGE PLANE 8 TYP 0 0.22 TYP 0.08 0.6 TYP 0.3 SEATING PLANE 4214839/C 04/2017 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. Refernce JEDEC MO-178. www.ti.com EXAMPLE BOARD LAYOUT DBV0005A SOT-23 - 1.45 mm max height SMALL OUTLINE TRANSISTOR PKG 5X (1.1) 1 5 5X (0.6) SYMM (1.9) 2 2X (0.95) 3 4 (R0.05) TYP (2.6) LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE:15X SOLDER MASK OPENING METAL SOLDER MASK OPENING METAL UNDER SOLDER MASK EXPOSED METAL EXPOSED METAL 0.07 MIN ARROUND 0.07 MAX ARROUND NON SOLDER MASK DEFINED (PREFERRED) SOLDER MASK DEFINED SOLDER MASK DETAILS 4214839/C 04/2017 NOTES: (continued) 4. Publication IPC-7351 may have alternate designs. 5. Solder mask tolerances between and around signal pads can vary based on board fabrication site. www.ti.com EXAMPLE STENCIL DESIGN DBV0005A SOT-23 - 1.45 mm max height SMALL OUTLINE TRANSISTOR PKG 5X (1.1) 1 5 5X (0.6) SYMM (1.9) 2 2X(0.95) 4 3 (R0.05) TYP (2.6) SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL SCALE:15X 4214839/C 04/2017 NOTES: (continued) 6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 7. Board assembly site may have different recommendations for stencil design. www.ti.com IMPORTANT NOTICE Texas Instruments Incorporated (TI) reserves the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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