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BL
BLGALAXY ELECTRICAL
Document Number 0268008 1.
FEATURES
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
Weight: 0.004 ounces, 0.13 grams
MAXIMUM R ATIN G S AND EL ECT RICAL CH ARACT ERIS TICS
Ratings at ２５ ambient temperature unless otherwise specified.
MAXIMUM RATINGS
BAV21 UNITS
Reverse voltage VR200 V
Peak reverse voltage VRM 250 V
Average forw ard rectified current
Half w ave rectification w ith resist.load
＠ TA=２５ and f 50Hz
Forw ard surge current @ t<1s and TJ=２５ IFSM A
Pow er dissipation @ TA=２５ Ptot mW
Thermal resistance junction to ambient RθJA K/W
Junction temperature TJ
Storage temperature range TSTG
ELECT RICAL CHARACT ERI ST I CS
UNITS
Forw ard voltage @ IF=100mA
IF=200mA
Leakage current @ VR=100V
@ VR=150V nA
@ VR=200V
Capacitance @ VF=VR=0V f=1MH
ZCJpF
Reverse recovery time
from IF=30mA to IR=30mA
from IRR=3mA, RL=100Ω.
IR
VFV
ns50
-
-
-
GALAXY ELECTRICAL
trr --
MIN TYP
2501)
1.5
I(AV)
1.0
5001)
mA
- - 1.0
-
BAV18 --- BAV21
M ECHANICA L DAT A
SMALL SIGN AL SWITCHING DIOD E
Case: DO-35,glass case
VOLTAGE RANGE: 50-200 V
CURRENT: 250 mA
Polarity: Color band denotes cathode
DO - 35(GLA SS)
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
-
100
100
100
MAX
-
-
-
BAV18 BAV19 BAV20
50 100 150
- - 1.25
50 120 200
430.0
175
-55 --- +175
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
0 200℃
VR=50V
0.1
1
10
100
1000
100
IR(TJ)
IR(25 )
TJ
0 100 200℃
100
1
mW
200
300
400
500
Ptot
TA
1.8
1.4
.6
1
.2
.1 .2 .5 1 2 100V
TJ=25
VR
5020105
0
.4
.8
1.2
1.6
2
CJ
BLGALAXY ELECTRICAL
www.galaxycn.com
Document Number 0268008 3.
100
10
.1
1
.01 0.2.4.6.81.0V
TJ=25
IF
1000
mA
TJ=100
VF
5
mA
1
rF
IF
101
2
10
20
50
100
2 5 20 50 100
0 90 150℃
.1
1
A
DC CURRENT IF
.3
.2
30 60 120
CURRENT (RECTIF.) IF(AV)
IO,IF
TA
BAV18 --- BAV21
FIG.4 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
FIG.5 -- DYNAMIC FORWARD RESISTANCE VERSUS
FORWARD CURRENT FIG.6 -- CAPACITANCE VERSUS REVERSE VOLTAGE
FIG.1 -- FORWARD CHARACTERISTICS FIG.2 -- ADMISSIBLE FORWARD CURRENT VERSUS
AMBIENT TEMPERATURE
FIG.3 -- ADMISSIBLE POWER DISSLPATION VERSUS
AMBIENT TEMPERATURE
RA TINGS A ND CHA RA CTERISTIC CU RV ES
