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FDMS0310S N-Channel PowerTrench® SyncFETTM
©2009 Fairchild Semiconductor Corporation
FDMS0310S Rev.C3
www.fairchildsemi.com
1
January 2015
FDMS0310S
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 4 mΩ
Features
Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A
Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 14 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFETTM Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
The FDMS0310S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Desktop
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VDSt Drain to Source Transient Voltage ( tTransient < 100 ns) 33 V
VGS Gate to Source Voltage (Note 4) ±20 V
ID
Drain Current -Continuous (Package limited) TC = 25 °C 42
A
-Continuous (Silicon limited) TC = 25 °C 83
-Continuous TA = 25 °C (Note 1a) 19
-Pulsed 90
EAS Single Pulse Avalanche Energy (Note 3) 60 mJ
PD
Power Dissipation TC = 25 °C 46 W
Power Dissipation TA = 25 °C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case 2.7 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS0310S FDMS0310S Power 56 13 ’’ 12 mm 3000 units
4
3
2
1
5
6
7
8
Power 56
D
DDD
S
S
S
G
D
D
D
D
G
SSS
Pin 1
Bottom
Top
FDMS0310S N-Channel PowerTrench® SyncFETTM
FDMS0310S Rev.C3 www.fairchildsemi.com2
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 10 mA, referenced to 25 °C 18 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 μA
IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.9 3.0 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 10 mA, referenced to 25 °C -5 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = 10 V, ID = 18 A 3.2 4.0
mΩVGS = 4.5 V, ID = 14 A 4.3 5.2
VGS = 10 V, ID = 18 A, TJ = 125 °C 4.1 5.2
gFS Forward Transconductance VDS = 5 V, ID = 18 A 97 S
(Note 2)
Dynamic Characteristics
Ciss Input Capacitance VDS = 15 V, VGS = 0 V,
f = 1 MHz
2120 2820 pF
Coss Output Capacitance 735 975 pF
Crss Reverse Transfer Capacitance 90 135 pF
RgGate Resistance 1.1 2.2 Ω
Switching Characteristics
td(on) Turn-On Delay Time
VDD = 15 V, ID = 18 A,
VGS = 10 V, RGEN = 6 Ω
12 21 ns
trRise Time 5 10 ns
td(off) Turn-Off Delay Time 28 44 ns
tfFall Time 4 10 ns
QgTotal Gate Charge VGS = 0 V to 10 V
VDD = 15 V,
ID = 18 A
33 46 nC
QgTotal Gate Charge VGS = 0 V to 4.5 V 15 22 nC
Qgs Gate to Source Gate Charge 6.5 nC
Qgd Gate to Drain “Miller” Charge 4.0 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A (Note 2) 0.48 0.7 V
VGS = 0 V, IS = 18 A (Note 2) 0.80 1.2
trr Reverse Recovery Time IF = 18 A, di/dt = 300 A/μs 26 42 ns
Qrr Reverse Recovery Charge 26 42 nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 60 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 16 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
FDMS0310S N-Channel PowerTrench® SyncFETTM
FDMS0310S Rev.C3 www.fairchildsemi.com3
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
0.0 0.5 1.0 1.5 2.0
0
30
60
90
VGS = 3.5 V
VGS = 10 V
VGS = 3 V
VGS = 4 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0306090
0
2
4
6
8
10
12
VGS = 4 V
VGS = 4.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 3.5 V
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
ID = 18 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
246810
2
4
6
8
10
12
TJ = 125 oC
ID = 18 A
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
O n -R es i s t an ce v s G a t e to
Source Voltage
Figure 5. Transfer Characteristics
1234
0
30
60
90
TJ = 125 oC
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra i n D io d e
Forward Voltage vs Source Current
FDMS0310S N-Channel PowerTrench® SyncFETTM
FDMS0310S Rev.C3 www.fairchildsemi.com4
Figure 7.
0 5 10 15 20 25 30 35
0
2
4
6
8
10
ID = 18 A
VDD = 15 V
VDD = 10 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 20 V
Gate Charge Characteristics Figure 8.
0.1 1 10 30
50
100
1000
3000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01 0.1 1 10 100
1
10
30
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50 75 100 125 150
0
30
60
90
Limited by Package
RθJC = 2.7 oC/W
VGS = 4.5 V
VGS = 10 V
ID, DRAIN CURRENT (A)
Tc, CASE TEMPERATURE (oC)
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Fig u r e 11. For w a r d Bias Safe
Operating Area
0.01 0.1 1 10 100200
0.01
0.1
1
10
100
300
100 μs
1 s
DC
100 ms
10 ms
1 ms
10 s
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
Figure 12.
10-4 10-3 10-2 10-1 110
100 1000
0.5
1
10
100
1000
3000
VGS = 10 V
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
S i n g l e P u l s e M a x i m u m
Power Dissipation
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS0310S N-Channel PowerTrench® SyncFETTM
FDMS0310S Rev.C3 www.fairchildsemi.com5
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10-4 10-3 10-2 10-1 110
100 1000
0.0001
0.001
0.01
0.1
1
SINGLE PULSE
RθJA = 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS0310S N-Channel PowerTrench® SyncFETTM
FDMS0310S Rev.C3 www.fairchildsemi.com6
SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS0310S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Typical Characteristics (continued)
Figure 14. FDMS0310S SyncFETTM body
diode reverse recovery characteristic
Figure 15. SyncFETTM body diode reverses
leakage versus drain-source voltage
0 5 10 15 20 25 30
10-6
10-5
10-4
10-3
10-2
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
IDSS, REVERSE LEAKAGE CURRENT (A)
VDS, REVERSE VOLTAGE (V)
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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