BAS21AVD,165 - NXP - Pdf.Support

1. Product profile

1.1 General description

Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74) small

Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

1.3 Applications

High-voltage switching in surface-mounted circuits

Automotive

Communication

1.4 Quick reference data

[1] Pulse test: tp≤300 μs; δ≤0.02.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] When switched from IF= 30 mA to IR=30mA; R

L= 100 Ω; measured at IR=3mA.

BAS21AVD

High-voltage switching diodes

Rev. 1 — 10 January 2011 Product data sheet

SOT457

High switching speed: trr ≤50 ns Low capacitance: Cd≤5pF

Reverse voltage: VR≤200 V AEC-Q101 qualified

Repetitive peak reverse voltage:

VRRM ≤250 V

Repetitive peak forward current:

IFRM ≤1A

Small SMD plastic package

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per diode

IFforward current [1][2] --200mA

IRreverse current VR= 200 V [1] - 25 100 nA

VRreverse voltage - - 200 V

trr reverse recovery time [3] -1650ns

Product data sheet Rev. 1 — 10 January 2011 2 of 12

NXP Semiconductors BAS21AVD

High-voltage switching diodes

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 anode (diode 1)

2 anode (diode 2)

3 anode (diode 3)

4 cathode (diode 3)

5 cathode (diode 2)

6 cathode (diode 1)

132

006aab10

Table 3. Ordering information

Type number Package

Name Description Version

BAS21AVD SC-74 plastic surface-mounted package; 6 leads SOT457

Table 4. Marking codes

Type number Marking code

BAS21AVD E6

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

VRRM repetitive peak

reverse voltage -250V

VRreverse voltage - 200 V

IFforward current [1][3] -200mA

IFRM repetitive peak

forward current tp≤1 ms;

δ≤25 % -1A

IFSM non-repetitive peak

forward current square wave [2]

tp=10μs-16A

tp= 100 μs-8A

tp=10ms - 2 A

Product data sheet Rev. 1 — 10 January 2011 3 of 12

NXP Semiconductors BAS21AVD

High-voltage switching diodes

[1] Pulse test: tp≤300 μs; δ≤0.02.

[2] Tj=25°C prior to surge.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[3] Soldering point of cathode tab.

7. Characteristics

[1] Pulse test: tp≤300 μs; δ≤0.02.

[2] When switched from IF= 30 mA to IR=30mA; R

L= 100 Ω; measured at IR=3mA.

Per device; one diode loaded

Ptot total power dissipation Tamb ≤25 °C[3] -250mW

[4] -295mW

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per device; one diode loaded

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 500 K/W

[2] - - 425 K/W

Rth(j-sp) thermal resistance from

junction to solder point [3] - - 140 K/W

Table 7. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VFforward voltage IF=100mA --1V

IF=200mA --1.25mV

IRreverse current VR=200V [1] - 25 100 nA

VR=200V; T

j= 150 °C - - 100 μA

Cddiode capacitance f = 1 MHz; VR= 0 V - 0.6 5 pF

trr reverse recovery time [2] - 1650ns

Product data sheet Rev. 1 — 10 January 2011 4 of 12

NXP Semiconductors BAS21AVD

High-voltage switching diodes

(1) Tj= 150 °C; typical values

(2) Tj=25°C; typical values

(3) Tj=25°C; maximum values

Based on square wave currents.

Tj=25°C; prior to surge

Fig 1. Forward current as a function of forward

voltage Fig 2. Non-repetitive peak for ward current as a

function of pulse duration; maximum values

(1) VR=V

Rmax; maximum values

(2) VR=V

Rmax; typical values

Fig 3. Reverse current as a function of junction temperatur e

600

(mA)

200

400

mbg384

021VF (V)

(1) (3)(2)

110 10

102

104105

mle165

tp (μA)

IFSM

(A)

mbg381

200

0 100 Tj (°C)

(μA)

10−2

102

10−1

(1) (2)

Product data sheet Rev. 1 — 10 January 2011 5 of 12

NXP Semiconductors BAS21AVD

High-voltage switching diodes

f=1MHz; T

j=25°C FR4 PCB, standard footprint

Fig 4. Diod e capacitance as a function of reverse

voltage; typical values Fig 5. Reverse voltage as a function of ambient

temperature; derating cu rve

FR4 PCB, standard footprint

Fig 6. Forward current as a function of ambient temperature; derating curve

010

VR (V)

(pF)

20 40

0.6

0.5

0.3

0.2

0.4

mle166

0 50 100 200

(V)

300

100

200

150

mle167

Tamb (°C)

mbg442

0 100 200

Tamb (˚C)

300

200

100

(mA)

Product data sheet Rev. 1 — 10 January 2011 6 of 12

NXP Semiconductors BAS21AVD

High-voltage switching diodes

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

9. Package outline

(1) IR=3mA

Fig 7. Re verse recovery time test circuit and wavefor ms

trr

(1)

+ I

output signal

10 %

90 %

input signal

V = V

= 50 ΩI

D.U.T.

= 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

Fig 8. Package outline SOT457 (SC-74)

04-11-08Dimensions in mm

3.0

2.5

1.7

1.3

3.1

2.7

pin 1 index

1.9

0.26

0.10

0.40

0.25

0.95

1.1

0.9

0.6

0.2

132

Product data sheet Rev. 1 — 10 January 2011 7 of 12

NXP Semiconductors BAS21AVD

High-voltage switching diodes

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

[2] T1: normal taping

[3] T2: reverse taping

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 10000

BAS21AVD SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165

Product data sheet Rev. 1 — 10 January 2011 8 of 12

NXP Semiconductors BAS21AVD

High-voltage switching diodes

11. Soldering

Fig 9. Reflow soldering footprint SOT457 (SC-74)

Fig 10. Wave soldering footprint SOT457 (SC-74)

solder lands

solder resist

occupied area

solder paste

sot457_

3.45

1.95

2.8253.3

0.45

(6×)

0.55

(6×)

0.7

(6×)

0.8

(6×)

2.4

0.95

Dimensions in mm

sot457_

5.3

5.05

1.45

(6×)

0.45

(2×)

1.5

(4×)

2.85

1.475

solder lands

solder resist

occupied area

preferred transport

direction during soldering

Dimensions in mm

Product data sheet Rev. 1 — 10 January 2011 9 of 12

NXP Semiconductors BAS21AVD

High-voltage switching diodes

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BAS21AVD v.1 20110110 Product data sheet - -

Product data sheet Rev. 1 — 10 January 2011 10 of 12

NXP Semiconductors BAS21AVD

High-voltage switching diodes

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those descri bed in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors product s are not designed,

authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe propert y or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third part y

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specificati on for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 10 January 2011 11 of 12

NXP Semiconductors BAS21AVD

High-voltage switching diodes

Quick reference data — The Quick reference data is an extract of th e

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BAS21AVD

High-voltage switching diodes

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 10 January 2011

Document identifier: BAS21AVD

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

10 Packing information . . . . . . . . . . . . . . . . . . . . . 7

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Contact information. . . . . . . . . . . . . . . . . . . . . 11

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12