©2000 Fairchild Semiconductor International Rev. A, February 2000
BC327/328
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCES Collector-Emitter Voltage
: BC327
: BC328 -50
-30 V
V
VCEO Collector-Emitter Voltage
: BC327
: BC328 -45
-25 V
V
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -800 mA
PCCollector Dissipation 625 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collect or-Em itter Break down Voltage
: BC327
: BC328
IC= -10mA, IB=0 -45
-25 V
V
BVCES Collect or-Em itter Break down Voltage
: BC327
: BC328
IC= -0.1mA, VBE=0 -50
-30 V
V
BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
ICES Collector Cut-off Current
: BC307
: BC338 VCE= -45V, VBE=0
VCE= -25V, VBE=0 -2
-2 -100
-100 nA
nA
hFE1
hFE2
DC Current Gain
VCE= -1V, IC= -100mA
VCE= -1V, IC= -300mA 100
40 630
VCE (sat) Collector-Emitter Satu ration Voltage IC= -500mA, IB= -50mA -0.7 V
VBE (on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 V
fTCurrent Gain Bandwidth Product VCE= -5V, IC= -10mA, f=20MHz 1 00 MHz
Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 12 pF
Classification 16 25 40
hFE1 100 ~ 250 160 ~ 400 250 ~ 630
hFE2 60- 100- 170-
BC327/328
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC337/BC338
1. Collector 2. Base 3. Emitter
TO-92
1
©2000 Fairchild Semiconductor International Rev. A, February 2000
BC327/328
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Static Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Gain Bandwidth Product
-1 -2 -3 -4 -5
-0
-100
-200
-300
-400
-500
PT = 600mW
I
B
= - 3.0mA
I
B
= - 2.0mA
I
B
= - 3.5mA
IB = - 1.0mA
I
B
= - 1.5mA
IB = - 0.5mA
I
B
= - 4.0mA
I
B
= - 2.5mA
I
B
= - 4.5mA
I
B
= - 5.0mA
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-10-20-30-40-50
-4
-8
-12
-16
-20
PT = 600mW
IB = - 80μ
A
IB = - 70μ
A
IB = - 60μ
A
IB = - 50μ
A
IB = - 40μ
A
I
B
= - 30μ
A
I
B
= - 20μ
A
I
B
= - 10μ
A
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100 -1000
1
10
100
1000 PULSE
- 1.0V
VCE = - 2.0V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100 -1000
-0.01
-0.1
-1
-10
IC = 10 IB
PULSE
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9
-0.1
-1
-10
-100
-1000
VCE = -1V
PULSE
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100
10
100
1000
VCE = -5.0V
fT[MHz], GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
©2000 Fairchild Semiconductor International
BC327/328
Rev. A, February 2000
Typical Characteristics (Continued)
Figure 7 . Input and Output Capacitance
vs. Reverse Voltage Figure 8. Safe Operating Area
Figure 9. Power Derating
0.1 1 10 100
1
10
100
Cob
Cib
f = 1MHz
Cib, Cob [pF], CA P AC IT ANCE
VBE[V], COLL ECTOR-BASE V OLTAGE
VCE[V], COL L EC TOR -EMITTER VO LTAGE
-1 -10 -100
-1
-10
-100
-1000
BC328
BC327
pw = 10ms
ICP SINGLE PULSE
TC=25℃
duty cycle<2%
200ms
DC
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
PC [W], PO W E R D IS SIP AT IO N
TC [OC], CASE TEMPERATUR E
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BC327/328
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
TRADEMARKS
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not intended to be an exhaustive list of all such trademarks.
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Bottomless™
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E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
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Design This datasheet contains the design specifications for
product development. Specifications may change in
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changes at any time without notice in order to improve
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