DGT304SE - Dynex Semiconductor

DGT304SE13

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APPLICATIONS

■Variable speed A.C. motor drive inverters (VSD-AC)

■Uninterruptable Power Supplies

■ High Voltage Converters

■ Choppers

■ Welding

■ Induction Heating

■ DC/DC Converters

FEATURES

■Double Side Cooling

■High Reliability In Service

■High Voltage Capability

■Fault Protection Without Fuses

■High Surge Current Capability

■Turn-off Capability Allows Reduction In Equipment

Size And Weight. Low Noise Emission Reduces Acoustic

Cladding Necessary For Environmental Requirements

KEY PARAMETERS

ITCM 700A

VDRM 1300V

IT(AV) 250A

dVD/dt 500V/µs

diT/dt 500A/µs

Outline type code: E.

See Package Details for further information.

VOLTAGE RATINGS

CURRENT RATINGS

Symbol Parameter Conditions Max.

ITCM

THS = 80oC. Double side cooled. Half sine 50Hz.

VD = 60%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 2.0µF

RMS on-state current A

A700

250

390

Units

Repetitive peak controllable on-state current

THS = 80oC. Double side cooled. Half sine 50Hz.

IT(RMS)

IT(AV) Mean on-state current

1300DGT304SE13

ConditionsType Number

Tvj = 125oC, IDM = 50mA,

IRRM = 50mA, VRG = 2V

Repetitive Peak Off-state Voltage

VDRM

Repetitive Peak Reverse Voltage

VRRM

DGT304SE

Gate Turn-off Thyristor

Replaces January 2000 version, DS4609-4.0 DS4609-4.1 February 2002

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SURGE RATINGS

Conditions

4.0

80000

A2s

Surge (non-repetitive) on-state current

I2t for fusing

10ms half sine. Tj = 125oC

10ms half sine. Tj =125oC

diT/dt Critical rate of rise of on-state current 500

500 V/µs

Max. Units

Rate of rise of off-state voltage

dVD/dt

ITSM

Symbol Parameter

I2t

VD = 60% VDRM, IT = 700A, Tj = 125oC, IFG > 20A,

Rise time < 1.0µsA/µs

To 80% VDRM; RGK ≤ 1.5Ω, Tj = 125oC

GATE RATINGS

Symbol Parameter Conditions

UnitsMax.

Min.

-Peak reverse gate voltage

Peak forward gate current

Average forward gate power

Peak reverse gate power

Rate of rise of reverse gate current

Minimum permissable on time

Minimum permissable off time

-20

-µs40

VRGM This value maybe exceeded during turn-off

IFGM

PFG(AV)

PRGM

diGQ/dt

tON(min)

tOFF(min)

µs

A/µs

THERMAL RATINGS

Symbol Parameter Conditions Max.Min.

Rth(c-hs) Contact thermal resistance

Rth(j-hs) -

- 0.20

- 0.018

oC/W

per contact

Cathode side cooled

Double side cooled

Units

- 0.075 oC/W

Anode side cooled oC/W0.12

Virtual junction temperature

TOP/Tstg Operating junction/storage temperature range

-Clamping force

125

6.0

5.0

-40

oC/W

Clamping force 5.5kN

With mounting compound

DC thermal resistance - junction to heatsink

surface

Tvj 125 oC

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CHARACTERISTICS

Conditions

Peak reverse current

On-state voltageVTM

Peak off-state current

Reverse gate cathode current 50-

Turn-on energy

Gate trigger current

Delay time

Rise time

Fall time

Gate controlled turn-off time

Turn-off energy

Storage time

Turn-off gate charge

Total turn-off gate charge

- 700

VRGM = 16V, No gate/cathode resistor

µC

IT =600A, VDM = 750V

Snubber Cap Cs = 1.5µF,

diGQ/dt = 15A/µs

RL = (Residual inductance 3µH)

Tj = 125oC unless stated otherwise

Symbol Parameter

IDM

IRRM

VGT Gate trigger voltage

IGT

IRGM

EON

EOFF

tgs

tgf

tgq

QGQ

QGQT

Min. Max. Units

- 2.2 V

At = VDRM, VRG = 2V - 25 mA

At VRRM -50mA

VD = 24V, IT = 100A, Tj = 25oC - 0.9 V

VD = 24V, IT = 100A, Tj = 25oC - 1.0 A

mJ130-VD = 900V, IT = 600A, dIT/dt = 300A/µs

IFG = 20A, rise time < 1.0µs

RL = (Residual inductance 3µH)

µs1.5-

- 3.0 µs

- 350 mJ

-10µs

µs11-

µs0.9-

- 1400 µC

At 600A peak, IG(ON) = 2A d.c.

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CURVES

Fig.1 Gate characteristics

Fig.3 Dependence of ITCM on CS

Fig.2 Maximum (limit) on-state characteristics

Fig.4 Maximum (limit) transient thermal resistance

Fig.5 Surge (non-repetitive) on-state current vs time

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Fig.6 Steady state rectangulerwave conduction loss - double side cooled

Fig.7 Steady state sinusoidal wave conduction loss - double side cooled

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Fig.8 Turn-on energy vs on-state current

Fig.10 Turn-on energy vs on-state current

Fig.9 Turn-on energy vs peak forward gate current

Fig.11 Turn-on energy vs peak forward gate current

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Fig.12 Turn-on energy vs rate of rise of on-state current

Fig.14 Delay time and rise time vs peak forward gate current

Fig.13 Delay time and rise time vs on-state current

Fig.15 Turn-off energy vs on-state current

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Fig.16 Turn-off energy vs rate of rise of reverse gate current

Fig.18 Turn-off energy vs rate of rise of reverse gate current Fig.19 Turn-off energy vs on-state current with CS as parameter

Fig.17 Turn-off energy vs on-state current

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Fig.20 Storage time vs on-state current

Fig.22 Fall time vs on-state current

Fig.21 Storage time vs rate of rise of reverse gate current

Fig.23 Fall time vs rate of rise of reverse gate current

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Fig.24 Peak reverse gate current vs on-state current

Fig.26 Turn-off gate charge vs on-state current

Fig.25 Peak reverse gate current vs rate of rise of reverse

gate current

Fig.27 Turn-off gate charge vs rate of rise of reverse

gate current

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Fig.28 Dependence of critical dVD/dt on gate-cathode

resistance and gate-cathode reverse voltage

Anode voltage and current

0.9VD

0.1VD

tdtr

tgt

VDP

0.9IT

ITAIL

dVD/dt

VDVDM

Gate voltage and current

tgs tgf

tw1

VFG

IFG

0.1IFG

dIFG/dt

0.1IGQ

QGQ

0.5IGQM

IGQM

VRG

V(RG)BR

IG(ON)

tgq

Fig.29 General switching waveforms

Recommended gate conditions:-

ITCM = 700A

IFG = 20A

dIFG/dt = 20A/µs

IG(ON) = 2A d.c.

tw1(min) = 4.5µs

IGQM = 120A

dIGQ/dt = 15A/µs

QGQ = 700µc

VRG(min) = 2V

VRG(max) = 16V

These are recommended Dynex Semiconductor

conditions. Other conditions are permitted

according to users gate drive specifications.

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PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated

otherwise. DO NOT SCALE.

2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep

(One in each electrode)

Cathode

Anode

Ø25nom.

Ø42max

Ø25nom.

30˚

15˚

Gate

Nominal weight: 82g

Clamping force: 6kN ±10%

Package outine type code: E

Cathode tab

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506

GTO gate drive units AN4571

Recommendations for clamping power semiconductors AN4839

Use of VTO, rT on-state characteristic AN5001

Impoved gate drive for GTO series connections AN5177

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POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-

tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and

current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The

Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of

our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete

solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-

loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.

Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the

performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on

request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the

factory.

CUSTOMER SERVICES

Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020

SALES OFFICES

North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /

Tel: (949) 733-3005. Fax: (949) 733-2986.

Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020

These offices are supported by Representatives and Distributors in many countries world-wide.

TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.

Lincolnshire. LN6 3LF. United Kingdom.

Tel: 00-44-(0)1522-500500

Fax: 00-44-(0)1522-500550

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as

a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves

the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such

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e-mail: power_solutions@dynexsemi.com

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.

Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.

Advance Information: The product design is complete and final characterisation for volume production is well in hand.

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