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BFR360F
3
1
2
Low Noise Silicon Bipolar RF Transistor
• Low noise amplifier for low current applications
• Collector design supports 5 V supply voltage
• For oscillators up to 3.5 GHz
• Low noise figure 1.0 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR360F FBs 1 = B 2 = E 3 = C TSFP-3
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 6 V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 2
Collector current IC35 mA
Base current IB4
Total power dissipation1)
TS ≤ 98°C
Ptot 210 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS 250 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFR360F
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 6 9 - V
Collector-emitter cutoff current
VCE = 4 V, VBE = 0
VCE = 10 V, VBE = 0, TA = 85°C
Verified by random sampling
ICES
-
-
1
2
30
50
nA
Collector-base cutoff current
VCB = 4 V, IE = 0
ICBO - 1 30
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO - 1 500
DC current gain
IC = 15 mA, VCE = 3 V, pulse measured
hFE 90 120 160 -
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BFR360F
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 3 V, f = 1 GHz
fT11 14 - GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.32 0.5 pF
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.2 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.4 -
Minimum noise figure
IC = 3 mA, VCE = 3 V, ZS = ZSopt,
f = 1.8 GHz
NFmin - 1 - dB
Power gain, maximum available1)
IC = 15 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
f = 3 GHz
Gma
-
-
15.5
11
-
-
Transducer gain
IC = 15 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 1.8 GHz
f = 3 GHz
|S21e|2
-
-
13
9
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 15 mA, f = 1.8 GHz,
ZS = ZL = 50Ω
IP3 - 24 - dBm
1dB compression point at output
IC = 15 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 1.8 GHz
P-1dB - 9 -
1Gma = |S21e / S12e| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFR360F
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
mW
240
Ptot
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 2 4 6 8 10 12 V16
VCB
0
0.1
0.2
0.3
0.4
0.5
0.6
pF
0.8
Ccb
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)
VCE = parameter, f = 1.8GHz
0 5 10 15 20 25 30 mA 40
IC
-5
0
5
10
15
20
dBm
30
IP3
6V
4V
3V
2V
1V
Transition frequency fT= ƒ(IC)
f = 1GHz
VCE = parameter
0 5 10 15 20 25 30 mA 40
IC
0
2
4
6
8
10
12
14
GHz
17
fT
5V
3V
2V
1V
0.7V
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BFR360F
Power gain Gma, Gms = ƒ(IC)
f = 0.9GHz
VCE = parameter
0 5 10 15 20 25 30 mA 40
IC
12
13
14
15
16
17
18
19
20
21
22
dB
24
G
5V
3V
2V
1V
0.7V
Power gain Gma, Gms = ƒ(IC)
f = 1.8GHz
VCE = parameter
0 5 10 15 20 25 30 mA 40
IC
8
10
12
14
dB
18
G
5V
3V
2V
1V
0.7V
Power Gain Gma, Gms = ƒ(f)
VCE = parameter
0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5
f
4
9
14
19
24
29
34
39
dB
49
G
Ic = 15mA
5V
2V
1V
0.7V
Insertion Power Gain |S21|² = ƒ(f)
VCE = parameter
0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5
f
0
4
8
12
16
20
24
28
dB
36
G
Ic = 15mA
5V
2V
1V
0.7V
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BFR360F
Power Gain Gma, Gms = ƒ(VCE): 
|S21|² = ƒ(VCE): - - - -
f = parameter
0 1 2 3 4 5 V7
VCE
8
10
12
14
16
18
20
dB
24
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
Ic = 15mA
Power gain Gma, Gms = ƒ (IC)
VCE = 3V
f = parameter
0 5 10 15 20 25 30 35 mA 45
IC
7
8
9
10
11
12
13
14
15
16
17
18
19
dB
22
G
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
Noise figure NF = ƒ (IC)
VCE = 3V, f = 1,8 GHz
0 5 10 15 20 25 30 35 mA 45
IC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
dB
3
F
F50
NFmin
Noise figure F = ƒ(f)
VCE = 3V, ZS = ZSopt
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BFR360F
Source impedance for min.
noise figure vs. frequency
VCE = 3 V
100
+j10
-j10
50
+j25
-j25
25
+j50
-j50
10
+j100
-j100
0
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
3mA
15mA
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BFR360F
Package TSFP-3
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BFR360F
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
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