© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 2 1Publication Order Number:
NCP154/D
NCP154
Dual 300 mA, Low IQ, Low
Dropout, Dual Input Voltage
Regulator
The NCP154 is 300 mA, Dual Output Linear Voltage Regulator that
offers two independent input pins and provides a very stable and
accurate voltage with ultra low noise and very high Power Supply
Rejection Ratio (PSRR) suitable for RF applications. The device
doesn’t require any additional noise bypass capacitor to achieve ultra
low noise performance. In order to optimize performance for battery
operated portable applications, the NCP154 employs the Adaptive
Ground Current Feature for low ground current consumption during
light-load conditions.
Features
Operating Input Voltage Range: 1.9 V to 5.25 V
Two Independent Input Voltage Pins
Two Independent Output Voltage (for detail please refer to Ordering
Information)
Low IQ of typ. 55 mA per Channel
High PSRR: 75 dB at 1 kHz
Very Low Dropout: 140 mV Typical at 300 mA
Thermal Shutdown and Current Limit Protections
Stable with a 1 mF Ceramic Output Capacitor
Available in XDFN8 1.2 × 1.6 mm Package
Active Output Discharge for Fast Output Turn-Off
These are Pb-free Devices
Typical Applications
Smartphones, Tablets
Wireless Handsets, Wireless LAN, Bluetooth®, ZigBee® Interfaces
Other Battery Powered Applications
IN1
IN2
EN1
EN2
OUT1
OUT2
GND
NCP154
VOUT1
VOUT2
COUT1
1 mF
COUT2
1 mF
CIN2
1 mF
CIN1
1 mF
VIN1
VIN2
Figure 1. Typical Application Schematic
XDFN8, 1.2x1.6
CASE 711AS
MARKING DIAGRAM
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PIN CONNECTIONS
2
4GND
OUT1
3OUT2
7
5EN2
IN1
6 IN2
EP
1GND 8EN1
See detailed ordering, marking and shipping information in the
package dimensions section on page 17 of this data sheet.
ORDERING INFORMATION
XDFN8
(Top View)
X = Specific Device Code
M = Date Code
G= Pb−Free Package
XM
G
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Figure 2. Simplified Schematic Block Diagram
IN2
OUT2
ACTIVE
DISCHARGE
THERMAL
SHUTDOWN
ENABLE
LOGIC
GND
EN2
EN2
BANDGAP
REFERENCE MOSFET
DRIVER WITH
CURRENT LIMIT
THERMAL
SHUTDOWN
MOSFET
DRIVER WITH
CURRENT LIMIT
ACTIVE
DISCHARGE
EN1
BANDGAP
REFERENCE
ENABLE
LOGIC
EN1
OUT1
IN1
GND
Table 1. PIN FUNCTION DESCRIPTION
Pin No. Pin Name Description
1 GND Power supply ground. Soldered to the copper plane allows for effective heat dissipation.
2 OUT1 Regulated output voltage of the first channel. A small 1 mF ceramic capacitor is needed from this pin to
ground to assure stability.
3 OUT2 Regulated output voltage of the second channel. A small 1 mF ceramic capacitor is needed from this pin to
ground to assure stability.
4 GND Power supply ground. Soldered to the copper plane allows for effective heat dissipation.
5 EN2 Driving EN2 over 0.9 V turns-on OUT2. Driving EN below 0.4 V turns-off the OUT2 and activates the active
discharge.
6 IN2 Inputs pin for second channel. It is recommended to connect 1 mF ceramic capacitor close to the device pin.
7 IN1 Inputs pin for first channel. It is recommended to connect 1 mF ceramic capacitor close to the device pin.
8 EN1 Driving EN1 over 0.9 V turns-on OUT1. Driving EN below 0.4 V turns-off the OUT1 and activates the active
discharge.
EP Exposed pad must be tied to ground. Soldered to the copper plane allows for effective thermal dissipation.
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Table 2. ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Input Voltage (Note 1) VIN1, VIN2 −0.3 V to 6 V V
Output Voltage VOUT1, VOUT2 −0.3 V to VIN + 0.3 V or 6 V V
Enable Inputs VEN1, VEN2 −0.3 V to VIN + 0.3 V or 6 V V
Output Short Circuit Duration tSC Indefinite s
Maximum Junction Temperature TJ(MAX) 150 °C
Storage Temperature TSTG −55 to 150 °C
ESD Capability, Human Body Model (Note 2) ESDHBM 2,000 V
ESD Capability, Machine Model (Note 2) ESDMM 200 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
Table 3. THERMAL CHARACTERISTICS (Note 3)
Rating Symbol Value Unit
Thermal Characteristics, XDFN8 1.2 ×1.6 mm,
Thermal Resistance, Junction-to-Air qJA 160 °C/W
3. Single component mounted on 1 oz, FR4 PCB with 645 mm2 Cu area.
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Table 4. ELECTRICAL CHARACTERISTICS
(−40°CTJ85°C; VIN =V
OUT(NOM) + 1 V or 2.5 V, whichever is greater; VEN = 0.9 V, IOUT = 1 mA, CIN =C
OUT =1mF.
Typical values are at TJ= +25°C. Min/Max values are specified for TJ= −40°C and TJ=85°C respectively.) (Note 4)
Parameter Test Conditions Symbol Min Typ Max Unit
Operating Input Voltage VIN 1.9 5.25 V
Output Voltage Accuracy −40°C TJ 85°C VOUT > 2 V VOUT −2 +2 %
VOUT 2 V −60 +60 mV
Line Regulation VOUT + 0.5 V VIN 5 V RegLINE 0.02 0.1 %/V
Load Regulation IOUT = 1 mA to 300 mA RegLOAD 15 40 mV
Dropout Voltage (Note 5) IOUT = 300 mA
VOUT(nom) = 1.5 V
VDO
360 470 mV
VOUT(nom) = 1.8 V 335 390 mV
VOUT(nom) = 2.7 V 165 275 mV
VOUT(nom) = 2.8 V 160 270 mV
VOUT(nom) = 3.0 V 150 260 mV
VOUT(nom) = 3.3 V 140 250 mV
Output Current Limit VOUT = 90% VOUT(nom) ICL 400 mA
Quiescent Current IOUT = 0 mA, EN1=VIN, EN2=0V or EN2=VIN, EN1=0V IQ55 100 mA
IOUT1 = IOUT2 = 0 mA, VEN1 = VEN2 = VIN IQ110 200 mA
Shutdown current (Note 6) VEN 0.4 V, VIN = 5.25 V IDIS 0.1 1 mA
EN Pin Threshold Voltage
High Threshold
Low Threshold VEN Voltage increasing
VEN Voltage decreasing VEN_HI
VEN_LO
0.9 0.4 V
EN Pin Input Current VEN = VIN = 5.25 V IEN 0.3 1.0 mA
Power Supply Rejection Ratio VIN = VOUT+1 V for VOUT > 2 V, VIN = 2.5 V,
for VOUT 2 V, IOUT = 10 mA f = 1 kHz PSRR 75 dB
Output Noise Voltage f = 10 Hz to 100 kHz VN75 mVrms
Active Discharge Resistance VIN = 4 V, VEN < 0.4 V RDIS 50 W
Thermal Shutdown Temperature Temperature increasing from TJ = +25°C TSD 160 °C
Thermal Shutdown Hysteresis Temperature falling from TSD TSDH 20 °C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at
TJ=T
A=25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN =V
OUT(NOM) +1V.
6. Shutdown Current is the current flowing into the IN pin when the device is in the disable state.
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TYPICAL CHARACTERISTICS
Figure 3. Output Voltage vs. Temperature –
VOUT = 1.0 V Figure 4. Output Voltage vs. Temperature –
VOUT = 1.0 V
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
805035205−10−25−40
0.95
0.96
0.98
0.99
1.00
1.02
1.04
1.05
806535205−10−25−40
1.75
1.76
1.78
1.79
1.80
1.81
1.83
1.85
Figure 5. Output Voltage vs. Temperature –
VOUT = 1.0 V Figure 6. Output Voltage vs. Temperature –
VOUT = 1.0 V
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
806535205−10−25−40
2.75
2.76
2.78
2.79
2.80
2.82
2.83
2.85
806550205−10−25−40
3.25
3.26
3.28
3.29
3.31
3.32
3.33
3.35
Figure 7. Ground Current vs. Output Current Figure 8. Quiescent Current vs. Input Voltage
IOUT, OUTPUT CURRENT (mA) VIN, INPUT VOLTAGE (V)
2702101501209060300
0
60
120
240
360
420
540
600
5.04.03.53.02.01.00.50
0
6
18
24
36
42
54
60
VOUT, OUTPUT VOLTAGE (V)
VOUT, OUTPUT VOLTAGE (V)
VOUT, OUTPUT VOLTAGE (V)
VOUT, OUTPUT VOLTAGE (V)
IGND, GROUND CURRENT (mA)
IQ, QUIESCENT CURRENT (mA)
65 95
0.97
1.01
1.03
IOUT = 1 mA
IOUT = 300 mA
IOUT = 1 mA
IOUT = 300 mA
50 95
1.77
1.82
1.84
IOUT = 1 mA
IOUT = 300 mA
IOUT = 1 mA
IOUT = 300 mA
VIN = 2.5 V
VOUT = 1.0 V
CIN = COUT = 1 mF
50 95
2.77
2.81
2.84
35 95
3.27
3.30
3.34
VIN = 2.8 V
VOUT = 1.8 V
CIN = COUT = 1 mF
VIN = 3.8 V
VOUT = 2.8 V
CIN = COUT = 1 mF
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
180
300
480
180 240 300
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mFTJ = 85°C
TJ = 25°C
TJ = −40°C
12
30
48
1.5 2.5 4.5 5.5
85°C
−40°C
25°C
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
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TYPICAL CHARACTERISTICS
Figure 9. Quiescent Current vs. Temperature Figure 10. Line Regulation vs. Temperature –
VOUT = 1.0 V
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
806550355−10−25−40
40
42
46
48
52
54
58
60
956550205−10−25−40
−0.10
−0.08
−0.04
0.06
0
0.04
0.08
0.10
Figure 11. Line Regulation vs. Temperature –
VOUT = 3.3 V Figure 12. Load Regulation vs. Temperature –
VOUT = 1.0 V
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
806550355−10−25−40
−0.10
0.06
−0.04
−0.02
0.02
0.04
0.08
0.10
806550205−10−25−40
0
3
9
12
15
21
27
30
Figure 13. Load Regulation vs. Temperature –
VOUT = 3.3 V Figure 14. Dropout Voltage vs. Output Current
– VOUT = 3.3 V
TJ, JUNCTION TEMPERATURE (°C) IOUT, OUTPUT CURRENT (mA)
956535205−10−25−40
0
3
9
12
18
21
27
30
27522517512510075500
0
25
50
75
125
150
175
200
IQ, QUIESCENT CURRENT (mA)
LINEREG, LINE REGULATION (%/V)
LINEREG, LINE REGULATION (%/V)
REGLOAD, LOAD REGULATION (mV)
REGLOAD, LOAD REGULATION (mV)
VDROP, DROPOUT VOLTAGE (mV)
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
44
50
56
20 95 35 80
−0.06
−0.02
0.02
VIN = 2.5 V
VOUT = 1.0 V
CIN = COUT = 1 mF
20 95
−0.08
−0.06
0
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
VIN = 2.5 V
VOUT = 1.0 V
CIN = COUT = 1 mF
6
18
24
35 95
50 80
6
15
24
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
25 150 200 250 300
100
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
TJ = 85°C
TJ = 25°C
TJ = −40°C
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TYPICAL CHARACTERISTICS
Figure 15. Dropout Voltage vs. Temperature Figure 16. Dropout Voltage vs. Output Voltage
TJ, JUNCTION TEMPERATURE (°C) VOUT, OUTPUT VOLTAGE (V)
956550205−10−25−40
0
20
40
80
100
120
180
200
3.33.12.72.52.32.11.71.5
0
50
100
150
200
300
350
400
Figure 17. Current Limit vs. Temperature Figure 18. Short Circuit Current vs.
Temperature
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
806550205−10−25−40
350
375
425
450
500
525
575
600
958050205−10−25−40
350
375
400
450
500
525
575
600
Figure 19. Short Circuit Current vs. Input
Voltage Figure 20. Disable Current vs. Temperature
VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
5.24.94.34.03.73.12.82.5
430
440
460
470
490
500
520
530
95805035205−25−40
0
3
9
12
18
21
24
30
VDROP, DROPOUT VOLTAGE (mV)
VDO, DROPOUT VOLTAGE (mV)
ICL, CURRENT LIMIT (mA)
ISC, SHORT CIRCUIT CURRENT (mA)
ISC, SHORT CIRCUIT CURRENT (mA)
IDIS, DISABLE CURRENT (nA)
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
IOUT = 300 mA
60
140
160
250
1.9 2.9 3.535 80
35 95
400
475
550 VOUT = 90% VOUT(NOM)
CIN = COUT = 1 mF
VIN = 3.8 V
VIN = 5.25 V
6535
425
475
550 VOUT = 0 V
CIN = COUT = 1 mFVIN = 3.8 V
VIN = 5.25 V
65−10
6
15
27 VIN = 4.3 V
VOUT = 0 V
VEN = 0 V
CIN = COUT = 1 mF
3.4 4.6 5.5
450
480
510
VOUT = 0 V
CIN = COUT = 1 mF
IOUT = 150 mA
IOUT = 0 mA
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TYPICAL CHARACTERISTICS
Figure 21. Enable Thresholds vs. Temperature Figure 22. Current to Enable Pin vs.
Temperature
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
806535205−10−25−40
0
0.1
0.3
0.4
0.5
0.7
0.8
1.0
806550205−10−25−40
0
50
150
200
250
300
400
450
Figure 23. Discharge Resistivity vs.
Temperature Figure 24. Power Supply Rejection Ratio,
VOUT = 1.0 V
TJ, JUNCTION TEMPERATURE (°C) FREQUENCY (kHz)
806550205−10−25−40
0
10
20
40
60
70
90
100
10,0001,0001001010.1
0
10
30
40
60
70
80
100
Figure 25. Power Supply Rejection Ratio,
VOUT = 3.3 V Figure 26. Output Capacitor ESR vs. Output
Current
FREQUENCY (kHz) IOUT, OUTPUT CURRENT (mA)
10,0001,0001001010.1
0
10
30
40
50
70
90
100
27021018015012060300
0.1
1
10
100
VEN, ENABLE VOLTAGE (V)
IEN, ENABLE CURRENT (nA)
RDIS, DISCHARGE RESISTIVITY (W)
RR, RIPPLE REJECTION (dB)
RR, RIPPLE REJECTION (dB)
ESR (W)
50 95
0.2
0.6
0.9
OFF ON
ON OFF
35 95
100
350
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
35 95
30
50
80
VIN = 4 V
VOUT = 1 V
CIN = COUT = 1 mF
20
50
90
300 mA
150 mA
100 mA
1 mA
10 mA
VIN = 2.5 V + 100 mVPP
VOUT = 1.0 V
CIN = none
COUT = 1 mF, MLCC
300 mA
150 mA
100 mA
1 mA
10 mA
VIN = 4.3 V + 100 mVPP
VOUT = 3.3 V
CIN = none
COUT = 1 mF, MLCC
20
60
80
VOUT = 1.0 V
VOUT = 3.3 V
90 240 300
VIN = VOUT + 1 V or 2.5 V
CIN = COUT = 1 mF, MLCC,
size 1206
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TYPICAL CHARACTERISTICS
Figure 27. Output Voltage Noise Spectral Density for VOUT = 1.0 V, COUT = 1 mF
FREQUENCY (kHz)
100101 10000.10.01
0.001
0.01
0.1
1
10
Figure 28. Output Voltage Noise Spectral Density for VOUT = 1.8 V, COUT = 1 mF
Figure 29. Output Voltage Noise Spectral Density for VOUT = 3.3 V, COUT = 1 mF
OUTPUT VOLTAGE NOISE (mV/sqrtHz)
IOUT 10 Hz – 100 kHz 100 Hz – 100 kHz
1 mA 40.83 40.27
10 mA 36.03 35.38
150 mA 36.54 35.97
300 mA 37.05 36.48
RMS Output Noise (mV)
IOUT 10 Hz – 100 kHz 100 Hz – 100 kHz
1 mA 77.84 77.28
10 mA 71.71 70.48
150 mA 71.95 70.88
300 mA 72.71 71.67
RMS Output Noise (mV)
IOUT 10 Hz – 100 kHz 100 Hz – 100 kHz
1 mA 119.7 117.87
10 mA 113.47 111.47
150 mA 113.84 112.05
300 mA 115.95 114.03
RMS Output Noise (mV)
300 mA
150 mA
1 mA 10 mA
VIN = 2.5 V
VOUT = 1.0 V
CIN = COUT = 1 mF
FREQUENCY (kHz)
100101 10000.10.01
0.001
0.01
0.1
1
10
OUTPUT VOLTAGE NOISE (mV/sqrtHz)
300 mA
150 mA
1 mA 10 mA
VIN = 2.8 V
VOUT = 1.8 V
CIN = COUT = 1 mF
FREQUENCY (kHz)
100101 10000.10.01
0.001
0.01
0.1
1
10
OUTPUT VOLTAGE NOISE (mV/sqrtHz)
300 mA
150 mA
1 mA 10 mA
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
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TYPICAL CHARACTERISTICS
Figure 30. Enable Turn−on Response –
VOUT = 1.0 V, COUT = 1 mFFigure 31. Enable Turn−on Response –
VOUT = 1.0 V, COUT = 4.7 mF
40 ms/div 40 ms/div
500 mV/div
Figure 32. Enable Turn−on Response –
VOUT = 3.3 V, COUT = 1 mFFigure 33. Enable Turn−on Response –
VOUT = 3.3 V, COUT = 4.7 mF
40 ms/div 40 ms/div
Figure 34. Line Transient Response – Rising
Edge, VOUT = 3.3 V, IOUT = 10 mA Figure 35. Line Transient Response – Falling
Edge, VOUT = 3.3 V, IOUT = 10 mA
8 ms/div 8 ms/div
VIN = 2.5 V
VOUT = 1.0 V
IOUT = 10 mA
CIN = COUT = 1 mF
50 mA/div 500 mV/div
500 mV/div
VIN = 2.5 V
VOUT = 1.0 V
IOUT = 10 mA
CIN = COUT = 4.7 mF
100 mA/div 500 mV/div
VEN
IIN
VOUT
VEN
IIN
VOUT
1 V/div
VIN = 4.3 V
VOUT = 3.3 V
IOUT = 10 mA
CIN = COUT = 1 mF
100 mA/div 500 mV/div
1 V/div
VIN = 4.3 V
VOUT = 3.3 V
IOUT = 10 mA
CIN = COUT = 4.7 mF
200 mA/div 500 mV/div
VEN
IIN
VOUT
VEN
IIN
VOUT
20 mV/div 500 mV/div
20 mV/div
VIN = 4.8 V to 3.8 V
IOUT = 10 mA
CIN = none
COUT = 1 mF
500 mV/div
VIN
VOUT
VIN
VOUT
VIN = 3.8 V to 4.8 V
IOUT = 10 mA
CIN = none
COUT = 1 mF
tRISE = 1 mstFALL = 1 ms
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TYPICAL CHARACTERISTICS
Figure 36. Line Transient Response– Rising
Edge, VOUT = 3.3 V, IOUT = 300 mA Figure 37. Line Transient Response– Falling
Edge, VOUT = 3.3 V, IOUT = 300 mA
4 ms/div 4 ms/div
Figure 38. Line Transient Response– Rising Edge,
VOUT = 3.3 V, IOUT = 10 mA, COUT = 4.7 mFFigure 39. Line Transient Response– Falling
Edge, VOUT = 3.3 V, IOUT = 10 mA, COUT = 4.7 mF
4 ms/div 4 ms/div
Figure 40. Load Transient Response − 1.0 V –
Rising Edge, IOUT1 = 100 mA to 300 mA Figure 41. Load Transient Response − 1.0 V –
Falling Edge, IOUT1 = 300 mA to 100 mA
4 ms/div 100 ms/div
VIN = 3.8 V to 4.8 V
IOUT = 300 mA
CIN = none
COUT = 1 mF
20 mV/div 500 mV/div
20 mV/div 500 mV/div
VIN
VOUT
VIN
VOUT
20 mV/div 500 mV/div
20 mV/div 500 mV/div
VIN
VOUT
VIN
VOUT
50 mV/div 100 mA/div
VOUT1
tRISE = 1 ms
VIN = 4.8 V to 3.8 V
IOUT = 300 mA
CIN = none
COUT = 1 mF
tFALL = 1 ms
VIN = 3.8 V to 4.8 V
IOUT = 10 mA
CIN = none
COUT = 4.7 mF
tRISE = 1 ms
VIN = 4.8 V to 3.8 V
IOUT = 10 mA
CIN = none
COUT = 4.7 mF
tFALL = 1 ms
VOUT2
50 mV/div
VIN = 2.8 V
VOUT1 = 1.0 V, VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
tRISE = 500 ns
50 mV/div 100 mA/div
IOUT1
VOUT1
VOUT2
50 mV/div
VIN = 2.8 V
VOUT1 = 1.0 V, VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
tFALL = 500 ns
IOUT1
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TYPICAL CHARACTERISTICS
Figure 42. Load Transient Response − 1.0 V –
Rising Edge, IOUT1 = 1 mA to 300 mA Figure 43. Load Transient Response − 1.0 V –
Falling Edge, IOUT1 = 300 mA to 1 mA
4 ms/div 10 ms/div
Figure 44. Load Transient Response − 1.0 V –
Rising Edge, IOUT1 = 50 mA to 300 mA Figure 45. Load Transient Response − 1.0 V –
Falling Edge, IOUT1 = 300 mA to 50 mA
4 ms/div 4 ms/div
Figure 46. Load Transient Response − 3.3 V –
Rising Edge, IOUT1 = 100 mA to 300 mA Figure 47. Load Transient Response – 3.3 V –
Falling Edge, IOUT1 = 300 mA to 100 mA
4 ms/div 100 ms/div
50 mV/div 100 mA/div
50 mV/div 100 mA/div
VOUT2
50 mV/div 100 mA/div
VOUT1
tRISE = 500 ns
VOUT2
50 mV/div
VIN = 4.3 V
VOUT1 = 3.3 V, VOUT2 = 2.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
tRISE = 500 ns
50 mV/div 100 mA/div
IOUT1
VOUT1
VOUT2
50 mV/div
VIN = 4.3 V
VOUT1 = 3.3 V, VOUT2 = 2.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
tFALL = 500 ns
50 mV/div
VOUT1
IOUT1
VIN = 2.8 V
VOUT1 = 1.0 V, VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
50 mV/div
VOUT2
tFALL = 500 ns
VOUT1
IOUT1 VIN = 2.8 V
VOUT1 = 1.0 V, VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
50 mV/div 100 mA/div
VOUT2
tRISE = 500 ns
50 mV/div
VOUT1
IOUT1 VIN = 2.8 V
VOUT1 = 1.0 V, VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
50 mV/div 100 mA/div50 mV/div
VOUT2
tFALL = 500 ns
VOUT1
IOUT1 VIN = 2.8 V
VOUT1 = 1.0 V, VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
IOUT1
NCP154
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13
TYPICAL CHARACTERISTICS
Figure 48. Load Transient Response − 3.3 V –
Rising Edge, IOUT1 = 1 mA to 300 mA Figure 49. Load Transient Response – 3.3 V –
Falling Edge, IOUT1 = 300 mA to 1 mA
4 ms/div 10 ms/div
Figure 50. Load Transient Response − 3.3 V –
Rising Edge, IOUT1 = 50 mA to 300 mA Figure 51. Load Transient Response – 3.3 V –
Falling Edge, IOUT1 = 300 mA to 50 mA
4 ms/div 4 ms/div
Figure 52. Enable Turn−Off – VOUT = 1.0 V Figure 53. Enable Turn−Off – VOUT = 3.3 V
200 ms/div 200 ms/div
50 mV/div 100 mA/div
50 mV/div 100 mA/div
VOUT2
500 mV/div
VOUT
tRISE = 500 ns
500 mV/div
VIN = 4.3 V
VOUT = 3.3 V
IOUT = 0 mA
COUT = 1 mF, 4.7 mF
tRISE = 500 ns
50 mV/div
VOUT1
IOUT1
VIN = 4.3 V
VOUT1 = 3.3 V, VOUT2 = 2.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
50 mV/div
VOUT2
tFALL = 500 ns
VOUT1
IOUT1 VIN = 4.3 V
VOUT1 = 3.3 V, VOUT2 = 2.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
50 mV/div 100 mA/div
VOUT2
tRISE = 500 ns
50 mV/div
VOUT1
IOUT1 VIN = 4.3 V
VOUT1 = 3.3 V, VOUT2 = 2.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
50 mV/div 100 mA/div50 mV/div
VOUT2
tFALL = 500 ns
VOUT1
IOUT1 VIN = 4.3 V
VOUT1 = 3.3 V, VOUT2 = 2.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
VEN
COUT = 1 mF
COUT = 4.7 mF
500 mV/div
VOUT
1 V/div
VIN = 4.3 V
VOUT = 3.3 V
IOUT = 0 mA
COUT = 1 mF, 4.7 mF
tRISE = 500 ns
VEN
COUT = 1 mF
COUT = 4.7 mF
NCP154
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14
TYPICAL CHARACTERISTICS
Figure 54. Turn−on/off − Slow Rising VIN Figure 55. Short Circuit and Thermal
Shutdown
20 ms/div 4 ms/div
1 V/div
VOUT1
VOUT2
VIN
VIN = 4.3 V
VOUT1 = 3.3 V, VOUT2 = 2.8 V
IOUT1 = 10 mA, IOUT2 = 10 mA
CIN = COUT1 = COUT2 = 1 mF
1 V/div
IOUT
500 mA/div
VOUT TSD cycling
Thermal
Shutdown
Short circuit
current
Short circuit
event
Overheating
VIN = 5.25 V
VOUT = 3.3 V
CIN = COUT = 1 mF
NCP154
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15
General
The NCP154 is a dual output high performance 300 mA
Low Dropout Linear Regulator. This device delivers very
high PSRR (75 dB at 1 kHz) and excellent dynamic
performance as load/line transients. In connection with low
quiescent current this device is very suitable for various
battery powered a pplications s uch as t ablets, cellular p hones,
wireless and many others. Each output is fully protected in
case of output overload, output short circuit condition and
overheating, assuring a very robust design. The NCP154
device is housed in XDFN−8 1.6 mm x 1.2 mm package
which is useful for space constrains application.
Input Capacitor Selection (CIN)
It is recommended to connect at least a 1 mF Ceramic X5R
or X7R capacitor as close as possible to the IN pin of the
device. This capacitor will provide a low impedance path for
unwanted AC signals or noise modulated onto constant
input voltage. There is no requirement for the min. or max.
ESR of the input capacitor but it is recommended to use
ceramic capacitors for their low ESR and ESL. A good input
capacitor will limit the influence of input trace inductance
and source resistance during sudden load current changes.
Larger input capacitor may be necessary if fast and large
load transients are encountered in the application.
Output Decoupling (COUT)
The NCP154 requires an output capacitor for each output
connected as close as possible to the output pin of the
regulator. The recommended capacitor value is 1 mF and
X7R or X5R dielectric due to its low capacitance variations
over the specified temperature range. The NCP154 is
designed to remain stable with minimum effective
capacitance of 0.33 mF to account for changes with
temperature, D C bias and package size. Especially for small
package size capacitors such as 0201 the effective
capacitance drops rapidly with the applied DC bias.
There is no requirement for the minimum value of
Equivalent Series Resistance (ESR) for the COUT but the
maximum value of ESR should be less than 3 W. Larger
output capacitors and lower ESR could improve the load
transient response or high frequency PSRR. It is not
recommended to use tantalum capacitors on the output due
to their large ESR. The equivalent series resistance of
tantalum capacitors is also strongly dependent on the
temperature, increasing at low temperature.
Enable Operation
The NCP154 uses the dedicated EN pin for each output
channel. This feature allows driving outputs separately.
If the EN pin voltage is <0.4 V the device is guaranteed to
be disabled. The pass transistor is turned−off so that there is
virtually n o current flow b etween the I N a nd OU T . The active
discharge transistor is active so that the output voltage VOUT
is pulled to GND through a 50 W resistor. In the disable state
the device consumes as low as typ. 10 nA from the VIN.
If the EN pin voltage >0.9 V the device is guaranteed to
be enabled. The NCP154 regulates the output voltage and
the active discharge transistor is turned−off.
The both EN pin has internal pull−down current source
with typ. value of 300 nA which assures that the device is
turned−off when the EN pin is not connected. In the case
where the EN function isn’t required the EN should be tied
directly to IN.
Output Current Limit
Output Current is internally limited within the IC to a
typical 400 mA. The NCP154 will source this amount of
current measured with a voltage drops on the 90% of the
nominal VOUT. If the Output Voltage is directly shorted to
ground (VOUT = 0 V), the short circuit protection will limit
the output current to 520 mA (typ). The current limit and
short circuit protection will work properly over whole
temperature range and also input voltage range. There is no
limitation for the short circuit duration. This protection
works separately for each channel. Short circuit on the one
channel do not influence second channel which will work
according to specification.
Thermal Shutdown
When the die temperature exceeds the Thermal Shutdown
threshold (TSD − 160°C typical), Thermal Shutdown event
is detected and the affected channel is turn−off. Second
channel still working. The channel which is overheated will
remain in this state until the die temperature decreases below
the Thermal Shutdown Reset threshold (TSDU140°C
typical). Once the device temperature falls below the 140°C
the appropriate channel is enabled again. The thermal
shutdown feature provides the protection from a
catastrophic device failure due to accidental overheating.
This protection is not intended to be used as a substitute for
proper heat sinking. The long duration of the short circuit
condition t o some output channel could cause turn−off other
output when heat sinking is not enough and temperature of
the other output reach TSD temperature.
Power Dissipation
As power dissipated in the NCP154 increases, it might
become necessary to provide some thermal relief. The
maximum power dissipation supported by the device is
dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part.
The maximum power dissipation the NCP154 can handle
is given by:
PD(MAX) +ƪ125oC*TAƫ
qJA (eq. 1)
The power dissipated by the NCP154 for given
application conditions can be calculated from the following
equations:
PD[ǒVIN1 @IGND1Ǔ)ǒVIN2 @IGND2Ǔ)(eq. 2)
)IOUT1ǒVIN1 *VOUT1Ǔ)IOUT2ǒVIN2 *VOUT2Ǔ
NCP154
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16
Figure 56. qJA vs. Copper Area (XDFN-8)
COPPER HEAT SPREADER AREA (mm2)
500 700400300200 6001000
60
80
100
120
140
180
200
220
qJA, JUNCTION TO AMBIENT THER-
MAL RESISTANCE (°C/W)
0.25
0.50
0.75
1.00
PD(MAX), MAXIMUM POWER DISSIPATION (W)
160
240
PD(MAX), TA = 25°C, 2 oz Cu
PD(MAX), TA = 25°C, 1 oz Cu
qJA, 1 oz Cu
qJA, 2 oz Cu
Reverse Current
The PMOS pass transistor has an inherent body diode
which will be forward biased in the case that VOUT > VIN.
Due to this fact in cases, where the extended reverse current
condition can be anticipated the device may require
additional external protection.
Power Supply Rejection Ratio
The NCP154 features very good Power Supply Rejection
ratio. If desired the PSRR at higher frequencies in the range
100 kHz – 10 MHz can be tuned by the selection of COUT
capacitor and proper PCB layout.
Turn−On Time
The turn−on time is defined as the time period from EN
assertion to the point in which VOUT will reach 98% of its
nominal value. This time is dependent on various
application conditions such as VOUT(NOM), COUT, TA.
PCB Layout Recommendations
To obtain good transient performance and good regulation
characteristics place input and output capacitors close to the
device pins and make the PCB traces wide. In order to
minimize the solution size, use 0402 capacitors. Larger
copper area connected to the pins will also improve the
device thermal resistance. The actual power dissipation can
be calculated from the equation above (Equation 2). Expose
pad should be tied the shortest path to the GND pin.
NCP154
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17
Table 5. ORDERING INFORMATION
Device Voltage Option*
(OUT1/OUT2) Marking Package Shipping
NCP154MX280280TAG 2.8 V / 2.8 V DA
XDFN−8
(Pb-Free) 3000 / Tape & Reel
NCP154MX180280TAG 1.8 V / 2.8 V DC
NCP154MX330180TAG 3.3 V / 1.8 V DD
NCP154MX300180TAG 3.0 V / 1.8 V DE
NCP154MX330280TAG 3.3 V / 2.8 V DF
NCP154MX330330TAG 3.3 V / 3.3 V DG
NCP154MX330300TAG 3.3 V / 3.0 V DH
NCP154MX300300TAG 3.0 V / 3.0 V DJ
NCP154MX100180TAG 1.0 V / 1.8 V DK
NCP154MX150280TAG 1.5 V / 2.8 V DL
NCP154MX180290TAG 1.8 V / 2.9 V DM
NCP154MX180300TAG 1.8 V / 3.0 V DN
NCP154MX280270TAG 2.8 V / 2.7 V DP
NCP154MX310310TAG 3.1 V / 3.1 V DQ
NCP154MX330285TAG 3.3 V / 2.85 V DR
NCP154MX180270TAG 1.8 V / 2.7 V DT
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*Contact factory for other voltage options. Output voltage range 1.0 V to 3.3 V with step 50 mV.
NCP154
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18
PACKAGE DIMENSIONS
XDFN8 1.6x1.2, 0.4P
CASE 711AS
ISSUE A
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A
SEATING
PLANE
0.10 C
A1
2X
2X 0.10 C
DIM
AMIN MAX
MILLIMETERS
0.30 0.45
A1 0.00 0.05
b0.13 0.23
D
E
L1
D2
PIN ONE
IDENTIFIER
0.08 C
0.10 C
A0.10 C
eb
B
4
88X
1
5
0.05 C
MOUNTING FOOTPRINT*
E2
1.60 BSC
1.20 BSC
0.05 REF
1.20 1.40
0.20 0.40
BOTTOM VIEW
L
8X DIMENSIONS: MILLIMETERS
0.35
8X 0.26
8X
1.40
0.40
PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
NOTE 3
L0.15 0.25
TOP VIEW
B
SIDE VIEW RECOMMENDED
0.44
A
D
E
8X
e/2
E2
D2 1.44
PACKAGE
OUTLINE
1
DETAIL B
C
DET AIL A
L1
DETAIL A
OPTIONAL
CONSTRUCTION
L
ÉÉ
ÇÇ
ÇÇ
DETAIL B
MOLD CMPDEXPOSED Cu
OPTIONAL
CONSTRUCTION
e0.40 BSC
8X
L1
8X
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Europe, Middle East and Africa Technical Support:
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Phone: 81−3−5817−1050
NCP154/D
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ON Semiconductor:
NCP154MX180280TAG NCP154MX330180TAG NCP154MX100180TAG NCP154MX300300TAG
NCP154MX330285TAG NCP154MX280280TAG NCP154MX330300TAG NCP154MX280270TAG
NCP154MX310310TAG NCP154MX150280TAG