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Is Now Part of
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE2955T
PNP Silicon Transis tor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse test: PW≤300µs, duty cycle≤2% Pulse
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 70 V
VCEO Collector-Emitter Voltage - 60 V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current - 10 A
IB Base Current - 6 A
PC Collector Dissipation (TC=25°C) 75 W
PC Collector Dissipation (Ta=25°C) 0.6 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condit ion Min. Max. Units
BVCEO Collector - Emitter Br eakdown Volt age IC= - 200mA, IB = 0 -60 V
ICEO Collector Cut-of f Current VCE = - 30V, IB = 0 -700 µA
ICEX1 Collector Cut-of f Current VCE = - 70V, VBE(of f) = 1.5V -1 mA
ICEX2 Collector Cut-of f Current VCE = - 70V, VBE(of f) = 1.5V
@ TC = 150°C -5
mA
IEBO Em itter Cut-off Current VEB = - 5V, IC = 0 -5 mA
hFE * DC Current Gain
VCE = - 4V, IC = - 4A
VCE = - 4V, IC = - 10A 20
5 100
VCE(sat) * Collector-Emitter Saturation Voltage IC = - 4A, IB = - 0.4A
IC = - 10A, IB = - 3.3A -1.1
-8 V
V
VBE (on) * Base- Emi tte r ON Voltage VCE = - 4 V, I C = - 4A -1.8 V
fT Current Gain Bandwidth Product VCE = - 10V, IC = - 500mA 2 MHz
MJE2955T
General Purpos e and Switching Applications
• DC Current Gain Specified to IC = 10 A
• High Current Gain Bandwidth Product : fT = 2M Hz (Min. )
1.Base 2.Collector 3.Emitter
1TO-220
©2001 Fairchild Semiconductor Corporation
MJE2955T
Rev. A1, February 2001
Typical Characteristic
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-0.01 -0.1 -1 -10
1
10
100
1000 VCE = -2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
IC = 10IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-1 -10 -100
-0.1
-1
-10
-100
100µs
5ms1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 255075100125150175
0
15
30
45
60
75
90
105
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE2955T
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. G
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