Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild's low voltage PowerTrench process. It has been optimized for battery power management applications. * -5.5 A, -20 V. Applications * Fast switching speed. * Battery management * High performance trench technology for extremely low RDS(ON) * Load switch RDS(ON) = 33 m @ VGS = -4.5 V RDS(ON) = 43 m @ VGS = -2.5 V RDS(ON) = 60 m @ VGS = -1.8 V * Battery protection D D S SuperSOT TM-6 D D 6 2 5 3 4 G Absolute Maximum Ratings Symbol 1 TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage 8 V ID Drain Current -5.5 A PD Maximum Power Dissipation - Continuous (Note 1a) - Pulsed TJ, TSTG -20 (Note 1a) 1.6 (Note 1b) 0.8 W -55 to +150 C (Note 1a) 78 C/W (Note 1) 30 C/W Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .445 Si3445DV 7'' 8mm 3000 units 2001 Fairchild Semiconductor Corporation Si3445DV Rev A (W) Si3445DV April 2001 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units -12 mV/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = -250 A,Referenced to 25C VDS = -16 V, VGS = 0 V -1 A IGSSF Gate-Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -8 V VDS = 0 V -100 nA On Characteristics -20 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 A,Referenced to 25C 3 ID = -5.5 A ID = -4.8 A ID = -4.0 A VDS = -5 V 24 30 42 -0.4 ID(on) On-State Drain Current VGS = -4.5 V, VGS = -2.5 V, VGS = -1.8 V, VGS = -4.5 V, gFS Forward Transconductance VDS = -5 V, ID = -3.5 A VDS = -10 V, f = 1.0 MHz V GS = 0 V, -0.7 -1.5 V mV/C 33 43 60 -20 m A 23 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time 1926 pF 530 pF 185 pF (Note 2) VDD = -10 V, VGS = -4.5 V, ID = -1 A, RGEN = 6 13 23 ns 11 20 ns ns td(off) Turn-Off Delay Time 90 144 tf Turn-Off Fall Time 45 72 ns Qg Total Gate Charge 19 30 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -10 V, VGS = -4.5 V ID = -3.5 A, 4 nC 7.5 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -0.7 -1.3 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. 78C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board. b. 156C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Si3445DV Rev A(W) Si3445DV Electrical Characteristics Si3445DV Typical Characteristics 3 20 VGS = -1.5V VGS = -4.5V -2.0V -2.5V 2.5 15 -1.8V 2 -1.8V 10 -2.0V 1.5 -2.5V -1.5V 5 -4.5V 1 0.5 0 0 1 2 0 3 5 10 15 20 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.12 1.5 ID = -2.8 A ID = -5.5A VGS = -4.5V 1.4 0.09 1.3 1.2 1.1 0.06 o TA = 125 C 1 0.9 0.03 o TA = 25 C 0.8 0.7 0 -50 -25 0 25 50 75 100 125 150 1 2 o TJ, JUNCTION TEMPERATURE ( C) 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 o TA = -55 C VDS = -5V -IS, REVERSE DRAIN CURRENT (A) 20 o 25 C 15 o 125 C 10 5 VGS = 0V 1 TA = 125oC 0.1 25oC -55oC 0.01 0.001 0.0001 0 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Si3445DV Rev A(W) Si3445DV Typical Characteristics 5 3500 VDS = -5V ID = -5.5A -10V f = 1MHz VGS = 0 V 3000 4 2500 -15V CISS 3 2000 1500 2 1000 COSS 1 500 CRSS 0 0 0 5 10 15 20 0 25 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 5 100 RDS(ON) LIMIT 100s 10 SINGLE PULSE RJA = 156oC/W 4 TA = 25oC 1ms 1 POWER (W) 10ms 100ms 1s DC VGS = -4.5V SINGLE PULSE 0.1 o 3 2 1 RJA = 156 C/W o TA = 25 C 0.01 0 0.1 1 10 100 0.1 1 -VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. D = 0 .5 THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE TRANSIENT 1 R J A ( t) = r ( t) + R J A R J A = 1 5 6 C /W 0 .1 0 .2 P (p k ) 0 .1 t1 T J - T A = P * R J A ( t) t2 D u ty C y c le , D = t1 / t2 0 .0 5 0 .0 1 0 .0 2 0 .0 1 S IN G L E P U L S E 0 .0 0 1 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 100 1000 t 1 , T IM E ( s e c ) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. Si3445DV Rev A(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1