April 2001
2001 Fairc hild Semiconduct or Cor por ation Si3445DV Rev A (W)
Si3445DV
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applicat i ons.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –5.5 A, –20 V . RDS(ON) = 33 mΩ @ VGS = –4.5 V
RDS(ON) = 43 m Ω @ V GS = –2.5 V
RDS(ON) = 60 m Ω @ V GS = –1.8 V
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON)
D
D
D
S
D
G
SuperSOT -6
TM
6
5
4
1
2
3
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source V ol tage –20 V
VGSS Gate-Source Voltage ±8 V
ID Drain Current – Continuous (Note 1a) –5.5 A
– Pulsed –20
Maximum Power Dissipation (Note 1a) 1.6 W PD (Note 1b) 0.8
TJ, TSTG Operating and St orage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistanc e, Juncti on-to-Case (Note 1) 30 °C/W
Package Marking and Ordering Information
Device Marki ng Device Reel Siz e Tape width Quantity
.445 Si3445DV 7’’ 8mm 3000 units
Si3445DV
Si3445DV Rev A(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Sourc e Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = –250 µA,Referenced to 25°C –12
mV/°C
IDSS Zero Gate Volt age Drai n Current VDS = –16 V, VGS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold V ol t age VDS = VGS, ID = –250 µA –0.4 –0.7 –1.5 V
∆VGS(th)
∆TJ Gate Threshold Vol tage
Temperature Coefficient ID = –250 µA,Referenced to 25°C
3
mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = –4.5 V, ID = –5.5 A
VGS = –2.5 V, ID = –4.8 A
VGS = –1.8 V, ID = –4.0 A
24
30
42
33
43
60
mΩ
ID(on) On–S tate Drain Current VGS = –4.5 V, VDS = –5 V –20 A
gFS Forward Transconductance VDS = –5 V, ID = –3. 5 A 23 S
Dynamic Characteristics
Ciss Input Capacitance 1926 pF
Coss Output Capacitance 530 pF
Crss Reverse Transfer Capacitance
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz 185 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 13 23 ns
tr Turn–On Rise Time 11 20 ns
td(off) Turn–Off Delay Time 90 144 ns
tf Turn–Off Fall Time
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 Ω
45 72 ns
Qg Total Gate Charge 19 30 nC
Qgs Gate–Source Charge 4 nC
Qgd Gate–Drain Charge
VDS = –10 V, ID = –3.5 A,
VGS = –4.5 V
7.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Cont i nuous Drain–Source Diode Forward Current –1.3 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = –1.3 A (Note 2) –0.7 –1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Si3445DV
Si3445DV Rev A(W)
Typical Characteristics
0
5
10
15
20
0123
-VDS, DRAIN-SOURCE VOLTAGE (V)
-1.5V
-2.5V -2.0V
-1.8V
VGS = -4.5V
0.5
1
1.5
2
2.5
3
0 5 10 15 20
-ID, DRAIN CURRENT (A)
VGS = -1.5V
-2.0V
-1.8V
-4.5V
-2.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
ID = -5.5A
VGS = -4.5V
0
0.03
0.06
0.09
0.12
12345
-VGS, GATE TO S O URCE VOL TAGE (V)
ID = -2.8 A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation
withTemperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
00.511.522.5
-VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55oC
25
o
C
125
o
C
VDS = -5V
0.0001
0.001
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DI O DE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A
)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forwa rd Voltage Variation
with Source Current and Temperature.
Si3445DV
Si3445DV Rev A(W)
Typical Characteristics
0
1
2
3
4
5
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
ID = -5.5A VDS = -5V
-15V
-10V
0
500
1000
1500
2000
2500
3000
3500
0 5 10 15 20
-VDS, DRAIN TO S O URCE VOL TAGE (V)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-VDS, DRAI N- S O UR CE VOLTAGE (V)
DC
1s
100ms
10ms1ms
100µs
RDS(ON) LIMIT
VGS = -4.5V
SINGLE PULSE
RθJA = 156oC/W
TA = 25oC
0
1
2
3
4
5
0.1 1 10 100
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
RθJA = 156oC/W
TA = 25oC
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, T IM E (s e c )
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
RθJA(t) = r(t) + RθJA
RθJA = 15 6 °C /W
TJ - T A = P * RθJA(t)
D u ty C y c le, D = t1 / t2
P(pk)
t1t2
S IN GLE PU LSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si3445DV
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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