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2N2608 JAN
POWER MOSFET
P CHANNEL
Processed per MIL-PRF-19500/295
DESIGNED FOR GENERAL PURPOSE SMALL SIGNAL SWITCHING AND AMPLIFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (TA = 250C unless otherwise noted)
Parameters / Test Conditions Symbol Value Units
Gate-Source Voltage VGSS 30 V
Power Dissipation (1) TA = 250CPD300 mW
Operating Junction & Storage Temperature Range Top, Tstg -65 to +200 0C
(1) Derate linearly, 1.71 mW/0C for TA = 250C.
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
PARAMETERS / TEST CONDITIONS SYMBOL MIN. MAX. UNITS
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0 µAdc V(BR)GSS 30 Vdc
Gate Reverse Current
VDS = 0, VGS = 30 Vdc
VDS = 0, VGS = 15 Vdc IGSS 10
7.5 ηA
Drain Current
VGS = 0, VDS = 5.0 Vdc IDDSS -1.0 -5.0 ηA
Gate-Source Cutoff Voltage
VDS = 5.0 V, ID = 1.0 µAdc VGS(off) 0.75 6.0 Vdc
Magnitude of Small-Signal, Common-Source Short-Circuit
Forward Transfer Admittance
VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz Yfs21,000 4,500 µmho
Small-Signal, Common-Source Short-Circuit Input Capacitance
VGS = 0, VDS = 5.0 Vdc, f = 1.0 MHz Ciss 10 pF
Common-Source Spot Noise Figure
VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz
BW = 16%, RG = 1.0 megohms, egen = 1.82 mVdc, NF 3.0 dB
Technical Data
TO-66
MIL-PRF
QPL
DEVICES