© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 5 1Publication Order Number:
MMBV109LT1/D
MMBV109LT1, MV209
Preferred Devices
Silicon Epicap Diodes
Designed for general frequency control and tuning applications;
providing solid−state reliability in replacement of mechanical tuning
methods.
Features
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
Pb−Free Packages are Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage VR30 Vdc
Forward Current IF200 mAdc
Forward Power Dissipation
MMBV109LT1
@ TA = 25°C
Derate above 25°CMV209
@ TA = 25°C
Derate above 25°C
PD
200
2.0
200
1.6
mW
mW/°C
mW
mW/°C
Junction Temperature TJ+125 °C
Storage Temperature Range Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 mAdc) V(BR)R 30 Vdc
Reverse Voltage Leakage Current
(VR = 25 Vdc) IR 0.1 mAdc
Diode Capacitance Temperature Co-
efficient (VR = 3.0 V dc, f = 1.0 MHz ) TCC 300 ppm/°C
http://onsemi.com
26−32 pF VOLTAGE VARIABLE
CAPACITANCE DIODES
3
Cathode
1
Anode
2
Cathode
1
Anode
SOT−23
TO−92
Preferred devices are recommended choices for future use
and best overall value.
12
3
12
MV
209
AYWW G
G
TO−92 (TO−226AC)
CASE 182
STYLE 1
SOT−23 (TO−236)
CASE 318−08
STYLE 8
MV209 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
M4A M G
G
M4A = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MARKING
DIAGRAMS
MMBV109LT1, MV209
http://onsemi.com
2
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
CR, Capacitance Ratio
C3/C25
f = 1.0 MHz (Note 1)
Device Package ShippingMin Nom Max Min Min Max
MMBV109LT1 SOT−23 3,000 / Tape & Reel
26 29 32 200 5.0 6.5
MMBV109LT1G SOT−23
(Pb−Free) 3,000 / Tape & Reel
MMBV109LT3 SOT−23 10,000 / Tape & Reel
MMBV109LT3G SOT−23
(Pb−Free) 10,000 / Tape & Reel
MV209 TO−92 1,000 Units / Bag
MV209G TO−92
(Pb−Free) 1,000 Units / Bag
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc.
Figure 1. DIODE CAPACITANCE
40
32
24
16
8
01 3 10 30 100
VR, REVERSE VOLTAGE (VOLTS)
CT, CAPACITANCE − pF
Figure 2. FIGURE OF MERIT
f, FREQUENCY (MHz)
Figure 3. LEAKAGE CURRENT
TA, AMBIENT TEMPERATURE
Figure 4. DIODE CAPACITANCE
TA, AMBIENT TEMPERATURE
Q, FIGURE OF MERIT
10
1000
100
10 100 1000
, REVERSE CURRENT (nA)
100
−60
0.01
0.001 0 +40 +100
Ct, DIODE CAPACITANCE (NORMALIZED)
1.04
−75
1.02
1.00
0.98
0.96 −25 +25 +75 +125
VR = 3.0 Vdc
f = 1.0 MHz
Ct [ Cc + Cj
36
28
20
12
4
f = 1.0 MHz
TA = 25°C
VR = 3 Vdc
TA = 25°C
VR = 20 Vdc
+120 +140+80+60+20−40 −20
IR
0.1
1.0
10
20
2.0
0.2
0.02
0.002
0.006
0.06
0.6
6.0
60
−50 0 +50 +100
1.03
1.01
0.99
0.97
NOTES ON TESTING AND SPECIFICATIONS
MMBV109LT1, MV209
http://onsemi.com
3
PACKAGE DIMENSIONS
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.029
c
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
MMBV109LT1, MV209
http://onsemi.com
4
PACKAGE DIMENSIONS
ÉÉ
ÉÉ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
A
L
K
B
R
P
D
HG
XX
SEATING
PLANE
12
V
N
C
N
SECTION X−X
D
J
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.21
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.050 BSC 1.27 BSC
H0.100 BSC 2.54 BSC
J0.014 0.016 0.36 0.41
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.03 2.66
P−−− 0.050 −−− 1.27
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
STYLE 1:
PIN 1. ANODE
2. CATHODE
TO−92 (TO−226AC)
CASE 182−06
ISSUE L
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MMBV109LT1/D
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