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FCPF150N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
©2015 Fairchild Semiconductor Corporation
FCPF150N65FL1 Rev. 1.0
www.fairchildsemi.com
1
May 2015
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol Parameter FCPF150N65FL1 Unit
VDSS Drain to Source Voltage 650 V
VGSS Gate to Source Voltage - DC ±20 V
- AC (f > 1 Hz) ±30
IDDrain Current - Continuous (TC = 25oC) 24* A
- Continuous (TC = 100oC) 14.9*
IDM Drain Current - Pulsed (Note 1) 72* A
EAS Single Pulsed Avalanche Energy (Note 2) 663 mJ
IAR Avalanche Current (Note 1) 4.7 A
EAR Repetitive Avalanche Energy (Note 1) 2.98 mJ
dv/dt MOSFET dv/dt 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 50
PDPower Dissipation (TC = 25oC) 39 W
- Derate Above 25oC0.31W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC
Symbol Parameter FCPF150N65FL1 Unit
RθJC Thermal Resistance, Junction to Case, Max. 3.2 oC/W
RθJA Thermal Resistance, Junction to Ambient, Max. 62.5
FCPF150N65FL1
N-Channel SuperFET® II FRFET® MOSFET
650 V, 24 A, 150 mΩ
Features
•700 V @ T
J = 150°C
•Typ. R
DS(on) = 133 mΩ
• Ultra Low Gate Charge (Typ. Qg = 72 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF)
• 100% Avalanche Tested
•RoHS Compliant
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. SuperFET II FRFET®
MOSFET combines a faster and more rugged intrinsic body
diode performance with fast switching, aimed at achieving bet-
ter reliability and efficiency especially in resonant switching
applications. SuperFET II FRFET is very suitable for the switch-
ing power applications such as server/telecom power, Solar
inverter, FPD TV power, computing power, lighting and indus-
trial power applications.
• Telecom/Server Power Supplies • Solar Inverters
• Computing Power Supplies • FPD TV Power/Lighting
G
S
D
TO-220F
GDS
www.fairchildsemi.com
2
©2015 Fairchild Semiconductor Corporation
FCPF150N65FL1 Rev. 1.0
FCPF150N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FCPF150N65FL1 FCPF150N65F TO-220F Tube N/A N/A 50 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 10 mA, TJ = 25°C 650 - - V
VGS = 0 V, ID = 10 mA, TJ = 150°C 700 - -
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 10 mA, Referenced to 25oC - 0.72 - V/oC
IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V - - 10 μA
VDS = 520 V, VGS = 0 V,TC = 125oC- 86 -
IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.4 mA 3 - 5 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 12 A - 133 150 mΩ
gFS Forward Transconductance VDS = 20 V, ID = 12 A -22-S
Ciss Input Capacitance VDS = 100 V, VGS = 0 V,
f = 1 MHz
- 2810 3737 pF
Coss Output Capacitance - 91 121 pF
Crss Reverse Transfer Capacitance - 0.77 - pF
Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 54 - pF
Coss eff. Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 361 - pF
Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 12 A,
VGS = 10 V
(Note 4)
-7294nC
Qgs Gate to Source Gate Charge - 15 - nC
Qgd Gate to Drain “Miller” Charge - 31 - nC
ESR Equivalent Series Resistance f = 1 MHz - 0.69 - Ω
td(on) Turn-On Delay Time VDD = 380 V, ID = 12 A,
VGS = 10 V, Rg = 4.7 Ω
(Note 4)
-2866ns
trTurn-On Rise Time - 15 40 ns
td(off) Turn-Off Delay Time - 73 156 ns
tfTurn-Off Fall Time - 6 22 ns
ISMaximum Continuous Drain to Source Diode Forward Current - - 24 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 72 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 12 A - - 1.2 V
trr Reverse Recovery Time VGS = 0 V, ISD = 12 A,
dIF/dt = 100 A/μs
- 123 - ns
Qrr Reverse Recovery Charge - 597 - nC
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 4.7 A, RG = 25 Ω, Starting TJ = 25°C.
3. ISD ≤ 12 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, Starting TJ = 25°C.
4. Essentially independent of operating temperature.
www.fairchildsemi.com
3
©2015 Fairchild Semiconductor Corporation
FCPF150N65FL1 Rev. 1.0
FCPF150N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
345678
1
10
100
-55oC
150oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
25oC
ID, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.1 1 10 20
1
10
100
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
ID, Drain Current[A]
VDS, Drain-Source Voltage[V]
VGS = 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
0.00.40.81.21.6
0.001
0.01
0.1
1
10
100
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
150oC
IS, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 20406080
0.10
0.15
0.20
0.25
0.30
*Note: TC = 25oC
VGS = 20V
VGS = 10V
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.1 1 10 100
0.1
1
10
100
1000
10000
100000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz Crss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
50
0 1632486480
0
2
4
6
8
10
*Note: ID = 12A
VDS = 130V
VDS = 325V
VDS = 520V
VGS, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
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4
©2015 Fairchild Semiconductor Corporation
FCPF150N65FL1 Rev. 1.0
FCPF150N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Eoss vs. Drain to Source Voltage
-100 -50 0 50 100 150 200
0.5
1.0
1.5
2.0
2.5
*Notes:
1. VGS = 10V
2. ID = 12A
RDS(on), [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.90
0.95
1.00
1.05
1.10
1.15
*Notes:
1. VGS = 0V
2. ID = 10mA
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
25 50 75 100 125 150
0
5
10
15
20
25
ID, Drain Current [A]
TC, Case Temperature [oC]
0.1 1 10 100 1000
0.01
0.1
1
10
100
10ms
10μs
100μs
1ms
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
DC
0 100 200 300 400 500 600 700
0
3
6
9
12
15
EOSS, [μJ]
VDS, Drain to Source Voltage [V]
www.fairchildsemi.com5
©2015 Fairchild Semiconductor Corporation
FCPF150N65FL1 Rev. 1.0
FCPF150N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 100101102
1E-3
0.01
0.1
1
10
ZθJC(t), Thermal Response [oC/W]
0.01
0.1
0.2
0.05
0.02
*Notes:
1. ZθJC(t) = 3.2oC/W Max.
2. Duty Factor, D = t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.5
Single pulse
t1, Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
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6
©2015 Fairchild Semiconductor Corporation
FCPF150N65FL1 Rev. 1.0
FCPF150N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Figure 13. Gate Charge Test Circuit & Waveform
Figure 14. Resistive Switching Test Circuit & Waveforms
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VGS
IG = const.
www.fairchildsemi.com
7
©2015 Fairchild Semiconductor Corporation
FCPF150N65FL1 Rev. 1.0
FCPF150N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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