HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005. 03.10
Page No. : 1/6
H06N60U, H06N60E, H06N60F HSMC Product Specification
H06N60 Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enh anced voltage- b locking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
• Robust High Volt age Termination
• Avalanc he Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol Parameter Value Units
IDDrain to Current (Continuous) 6 A
IDM Drain to Current (Pulsed) 24 A
VGS Gate-to-Source Voltage (Continue) ±20 V
Total Power Dissipation (TC=25oC)
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
110
110
40
W
W
W
PDDerate above 25OC
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
0.58
0.58
0.33
W/°C
W/°C
W/oC
TjOperating Temperature Range -55 to 150 OC
Tstg Storage Temperature Range -55 to 150 OC
EAS Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25OC
(VDD=100V, VGS=10V, IL=6A, L=10mH, RG=25Ω)250 mJ
TLMaximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds 260 °C
Note: 1. VDD=50V, ID=10A
2. Pulse Width and frequency is limited by Tj(max) and thermal response
H06N60 Series Pin Assignment
123
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Dr ain
Pin 3: Source
3-Lead Plastic TO-263
Package Code: U
Pin 1: Gate
Pin 2 & Tab: Dr ain
Pin 3: Source
123
Tab
123
Tab
H06N60 Series
Symbol:
G
D
S
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005. 03.10
Page No. : 2/6
H06N60U, H06N60E, H06N60F HSMC Product Specification
Thermal Characteristics
Symbol Parameter Value Units
TO-263 1.7
TO-220AB 1.7
RθJC Thermal Resistance Junction to Case Max. TO-220FP 3.3
OC/W
RθJA Thermal Resistance Junction to Ambient Max. 62 OC/W
ELectrical Characteristics (TJ=25OC, unless otherwise specified)
Symbol Characteristic Min. Typ. Max. Unit
V(BR)DSS Drain-S ourc e Br eakdown Vo ltage (VGS=0V, ID=250uA) 600 - - V
Drain-Source Leakage Current (VDS=600V, VGS=0V) - - 1 uA
IDSS Drain-Source Leakage Current (VDS=600V, VGS=0V, Tj=125OC) - - 50 uA
IGSSF Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V) - - 100 nA
IGSSR Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V) - - -100 nA
VGS(th) Gate Threshold V oltage (VDS=VGS, ID=250uA) 2 3 4 V
RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=3.6A)* - 1 1.2 Ω
gFS Forward Transconductance (VDS=15V, ID=3.6A)* 2 4 - S
Ciss Input Capacitance - 1498 -
Coss Output Capacitance - 158 -
Crss Reverse Transfer Capacitance VGS=0V, VDS=25V, f=1MHz -29-pF
td(on) Turn-on Delay Time - 14 -
trRise T i me - 19 -
td(off) Turn-off Delay Time - 40 -
tfFall Time
(VDD=300V, ID=6A, RG=9.1Ω,
VGS=10V)*
-26-
ns
QgTotal Gate Charge - 35.5 50
Qgs Gate-Source Charge - 8.1 -
Qgd Gate-Drain Charge (VDS=300V, ID=6A, VGS=10V)* - 14.1 - nC
LDInternal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die) -4.5-nH
LSInternal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad) -7.5-nH
*: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Source-Drain Diode
Symbol Characteristic Min. Typ. Max. Units
VSD Forward On Voltage(1) IS=6A, VGS=0V, TJ=25oC--1.2V
ton Forward Turn-On Ti me - ** - ns
trr Reverse Recovery Time IS=6A, dIS/dt=100A/us - 266 - ns
**: Negligibl e, Dominated by circui t inductance
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005. 03.10
Page No. : 3/6
H06N60U, H06N60E, H06N60F HSMC Product Specification
Characteristics Curve
Typical On-Resist ance & Dra in Curren t
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0123456789101112
Dr a in Cur rent -I
D
(A)
Drain- Sourc e On-Resist ance-R
DS(ON)
VGS=10V
On Resi st an ce Va riat i on with Temper at u re
0.00
0.50
1.00
1.50
2.00
2.50
0 25 50 75 100 125 150
Case Temperature-Tc (
o
C)
Norm alized Drain- Sour ce On
-
Resistance-R
DS(ON)
V
GS
=10
V
I
D
=3A
On-Region Characteristic
0
1
2
3
4
5
6
7
8
9
10
0246810
VDS, Dr ain-So urc e Vo l tage( V)
I D, Dr ain-Sour c e Cur r ent ( A).
V
GS
=4
V
GS
=5V
V
GS
=6V
V
GS
=10V
V
GS
=8V
Capacitance Ch ar act erist ics
0
500
1000
1500
2000
0.1 1 10 100
V
DS
, Deain - Sourc e Vol t age (V)
Capacitance (pF)
Ciss
Crss
Coss
Dra in Current Variat ion with Gate Voltage &
Temperature
0
1
2
3
4
5
6
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
G ate-Sou r c e Vol tage-V
GS
(V)
Drain- Sour ce Cur r ent-I
D
(A)
Tc= 25°C
V
DS
=10
V
Typical On-Resist ance & Dra in Curren t
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0123456789101112
Drain Curren t -I
D
(A)
Drain- Sourc e O n - Resistan ce- R
DS(ON)
V
GS
=10V V
GS
=15V
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005. 03.10
Page No. : 4/6
H06N60U, H06N60E, H06N60F HSMC Product Specification
TO-220AB Dimension
TO-220FP Dimension
A B
E
G
IK
M
O
P
3
2
1
C
N
H
D
Tab
F
J
L
Marking:
Control Code
Date Code
HE
06
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
N60
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Com pound : Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
DIM Min. Max.
A 5.58 7.49
B 8.38 8.90
C 4.40 4.70
D 1.15 1.39
E 0.35 0.60
F 2.03 2.92
G 9.66 10.28
H - *16.25
I-*3.83
J 3.00 4.00
K 0.75 0.95
L 2.54 3.42
M 1.14 1.40
N-*2.54
O 12.70 14.27
P 14.48 15.87
*: Typical, Unit: mm
Marking:
Control Code
Date Code
HF
06
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
N60
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Com pound : Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
A
D
F
G I
K
LM
3
2
1
C
J
N
α3
E
α2
O
α4
α5
α1
DIM Min. Max.
A 6.48 7.40
C 4.40 4.90
D 2.34 3.00
E 0.45 0.80
F 9.80 10.36
G 3.10 3.60
I 2.70 3.43
J 0.60 1.00
K 2.34 2.74
L 12.48 13.60
M 15.67 16.20
N 0.90 1.47
O 2.00 2.96
α1/2/4/5 -*5
o
α3-*27
o
*: Typical, Unit: mm
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005. 03.10
Page No. : 5/6
H06N60U, H06N60E, H06N60F HSMC Product Specification
TO-263 Dimension
( ): Reference Dimension, Unit: mm
DIM Min. Max. DIM Max. Max. DIM Min. Max.
A 9.70 10.10 L 4.30 4.70 W - (7.20)
B 1.00 1.40 M 1.25 1.40 X - (0.40)
C - (4.60) N -0.05 0.25 Y - (0.90)
D 9.00 9.40 O 2.20 2.60 a1 - (15o)
E 4.70 5.10 P 1.90 2.10 a2 - (3o)
F 15.00 15.60 Q - (0.75) a3 - 0o~3o
G-
(0.40) R 2.24 2.84 r1 - (φ1.50)
H 1.20 1.60 S 0.45 0.60 r2 - 0.30
I 1.17 1.37 T 9.80 10.20 r3 - (0.45)
J 0.70 0.90 U - (7.00) DP - (0.20)
K 2.34 2.74 V - (4.00)
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al P ark Hsi n-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
a3
a1
a2
a2a2
A
B
D
E
F
H
G
C
I J
K K
LM
N
O
R
PQ
S
T
U
V
WD
E
X
Y
F
DP
3-r2
r1
r2
r2
T
2Xr3
2-r2
123
3-Lead TO-263 Plastic
Surfac e Mount Package
HSMC Package Code: U
Marking:
Control Code
Date Code
HU
06
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
N60
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Com pound : Epoxy resin family,
flammability solid burning class: UL94V-0
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005. 03.10
Page No. : 6/6
H06N60U, H06N60E, H06N60F HSMC Product Specification
Solderi ng Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±1 5%
2. Reflow soldering of surface-mount devices
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate (TL to TP)<3
oC/sec <3oC/sec
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100oC
150oC
60~120 sec
150oC
200oC
60~180 sec
Tsmax to TL
- Ramp-up Rate <3oC/sec <3oC/sec
T ime mai n t a i n ed above:
- Te mperature (TL)
- Ti me (tL)183oC
60~150 sec 217oC
60~150 sec
Peak Temperature (TP) 240oC +0/-5oC 260oC +0/-5oC
Time within 5oC of actual Peak
Temperature (tP)10~30 sec 20~40 sec
Ramp- down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes
3. Flow (wave) soldering (solder dipping)
Products Peak temperature Dipping time
Pb devices. 245oC ±5oC 5sec ±1sec
Pb-Free de vic es . 260oC +0/-5oC5sec ±1sec
Figure 1: Temper ature prof ile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25 t 25
o
C to Peak
Time
Temperature
