1
ADVANCED POWER
TECHNOLOGY
POWER
DISCRETE SEMICONDUCTORS
2000 SHOR T FORM CATALOG
ISO9001 Certified
TECHNOLOGY TO THE NEXT POWER.
MIL-PRF-19500
2
Advanced Power Technology
Technology .... Beginning in 1984 with the introduction of Power MOS IV®, APT has
maintained a position at the forefront of power semiconductor technology. Our focus is on
the high voltage, high power and high performance segments of this market. Our
commitment is to maintain and enhance this position as a technological leader in MOS
controlled devices and FREDs and to deliver products which contribute to our customers’
success in delivering higher performance power systems.
Service .... Outstanding technology is only part of the story. A global netw ork of stocking
distributors, representatives and applications engineers are in place to support all phases
of your product design, evaluation and procurement activities. In a world which demands
superior execution, we’ve won awards as a service leader.
Quality .... Our commitment is to excellence in all things we do. Whether you are evaluating
the quality of our products, our technical assistance, our customer service or the quality of
our internal communications systems, excellence is our standard. We understand that
ISO9001, MIL-PRF-19500 and 8D are only the beginning.
• Low Charge/Low Capacitance Power MOS VITM MOSFETs and FREDFETs
• Linear MOSFETs
• Expanded Hermetic Product Offering
• Power MOS V® MOSFETs and FREDFETs
• Thunderbolt IGBT™ .... Capable of replacing MOSFETs up to 150kHz Operation
• Fast IGBT .... for up to 40kHz Operation
• Center-Tap FREDs .... 200V - 1000V
• High Frequency FREDs .... Replacement for GaAs Rectifiers
• New Pac kages .... Tape and reel D 3 PAK, T-MAX™ and TO-267
• RF MOSFETs .... Operation up to 100MHz
What’s New
3
7
8-13 22
NEW GENERATION
POWER MOS V®
MOSFETs & FREDFETs
RF MOSFETs
Table of Contents
LINEAR MOSFETS
4-6 19
Packaging Information
Package Quantity Per Tube
TO-247 30 UNITS
T-MAX™ 30 UNITS
TO-220 50 UNITS
ISOTOP®10 UNITS
TO-3 21 UNITS
TO-264 25 UNITS
D3 PAK 30 UNITS
D3 PAK Tape and Reel 400/REEL
Visit APT’s Website to Download Datasheets
http://www.advancedpower.com
HERMETIC IGBT’s & FREDs
PO WER MOS VITM
MOSFETs & FREDFETs
14-15
20-21
IGBT’s
HERMETIC MOSFETs
SALES OFFICES BACK COVER
FAST RECOVERY
EPITAXIAL DIODES
(FREDS) 16-18
CUSTOM PRODUCTS 23
4
WITH ALL THE BENEFITS OF POWER MOS V®........PLUS
LOW GATE Improvement Improvement
Charge LC Series LC Series LC Series
MOS IV®MOS V®MOS VI™ vs vs
Parameter 5020BN 5017BVR 5017BLC MOS IV®MOS V®
RDS, m
W
Max 200 170 170 15% -
ID, Amps Max 28 30 30 7% -
Qg, nC Typ 140 200 85 29% 58%
Ciss, pF Typ 2890 4400 3025 - 31%
Crss, pF Typ 230 265 120 54% 55%
EAS, mJ Max - 1300 1300 - -
Comparison of K e y P arameters by Technology
for 500 Volt 370 Watt MOSFET
NEW
L C Series - POWER MOS VITM
Low Gate Charge
Low Capacitances .........
New advanced designs, thicker gate
oxide, and shallower device junctions
provide for significant reductions in gate
charge and capacitances as shown in the
table below. The benefits include
reduction in gate driver requirements and
improved efficiencies.
F aster Switching / Lower Switching
Losses .........
The lower capacitances combined with the
low internal gate resistance resulting from
new advanced designs and the unique metal
gate structure provide for a 50% reduction
in total switching time compared to
POWER MOS VTM. This dramatically
improved switching efficiency enables
higher frequency operation and smaller
power supplies.
5
T-Max
BVDSS RDS(ON) ID (cont) PDCiss(pF) Crss(pF) Qg(nC) EAS APT Samples Package
Volts Ohms Amps Watts Typ Typ Typ mJ Part Number A vailable Style
1000 1.000 11 280 2330 90 80 1210 APT1001RBLC NOW
0.860 13 370 2835 110 100 1300 APT10086BLC 1Q00
500 0.200 26 300 2500 100 70 1300 APT5020BLC NOW TO-247
0.170 30 370 3025 120 85 1300 APT5017BLC NOW
0.150 32 370 3025 120 85 1300 APT5015BLC NOW
200 0.040 59 280 3100 100 60 1300 APT20M40BLC 2Q00
0.038 67 370 3400 120 70 1300 APT20M38BLC 2Q00
1000 1.000 11 280 2330 90 80 1210 APT1001RSLC 1Q00
0.860 13 370 2835 110 100 1300 APT10086SLC 1Q00
500 0.200 26 300 2500 100 70 1300 APT5020SLC 1Q00 D3 PAK
0.170 30 370 3025 120 85 1300 APT5017SLC 1Q00
200 0.040 59 280 3100 100 60 1300 APT20M40SLC 2Q00
0.038 67 370 3400 120 70 1300 APT20M38SLC 2Q00
1000 0.500 21 520 5000 190 170 2500 APT10050B2LC 2Q00
0.400 25 625 5830 220 190 3000 APT10040B2LC 2Q00
500 0.140 37 450 3650 145 105 1600 APT5014B2LC 1Q00
0.100 47 520 5200 200 150 2500 APT5010B2LC NOW T-MAX™
0.080 58 625 6200 240 180 3000 APT50M80B2LC 1Q00
200 0.022 100 520 6400 170 115 2500 APT20M22B2LC 2Q00
0.018 100 625 7600 200 140 3000 APT20M18B2LC 2Q00
1000 0.500 21 520 5000 190 170 2500 APT10050LLC 2Q00
0.400 25 625 5830 220 190 3000 APT10040LLC 2Q00
500 0.140 37 450 3650 145 105 1600 APT5014LLC 1Q00
0.100 47 520 5200 200 150 2500 APT5010LLC NOW TO-264
0.080 58 625 6200 240 180 3000 APT50M80LLC 1Q00
200 0.022 100 520 6400 170 115 2500 APT20M22LLC 2Q00
0.018 100 625 7600 200 140 3000 APT20M18LLC 2Q00
1000 0.500 25 450 5000 190 170 2500 APT10050JLC 2Q00
0.250 34 700 11250 430 380 3600 APT10025JLC 1Q00
500 0.100 44 450 5200 200 150 2500 APT5010JLC 1Q00 ISOTOP®
0.080 53 520 6200 240 180 3000 APT50M80JLC 1Q00
0.050 77 700 11350 440 330 3600 APT50M50JLC 1Q00
TO-247
D
3
PAK
D3 P AK[S] ISOTOP®[J]
(ISOLATED BASE)
SOT-227
GS
S
D
TO-264
T -MAX™ [B2] TO-264[L]
TO-247 [B]
NEW
L C Series - POWER MOS VITM MOSFETs
6
IDCiss Crss Qgtrr
BVDSS RDS(ON) (cont) PD(pF) (pF) (nC) (nsecs) EAS APT Samples Package
Volts Ohms Amps Watts Typ Typ Typ Max mJ Part Number A vailable Style
1000 1.100 11 280 2300 65 90 200 1210 APT1001R1BFLC 2Q00
0.860 13 370 2800 80 110 200 1300 APT10086BFLC 2Q00
500 0.200 26 300 2800 80 80 250 1300 APT5020BFLC 1Q00 TO-247
0.170 30 370 3000 105 100 250 1300 APT5017BFLC 1Q00
200 0.040 59 280 3100 100 60 200 1300 APT20M40BFLC 2Q00
0.038 67 370 3400 120 70 225 1300 APT20M38BFLC 2Q00
1000 0.500 21 520 5000 145 200 250 2500 APT10050B2FLC 2Q00
500 0.140 37 450 4100 120 115 250 1600 APT5014B2FLC 2Q00
0.100 47 520 5600 155 155 250 2500 APT5010B2FLC 2Q00 T-MAX™
0.080 58 625 6700 185 190 250 3000 APT50M80B2FLC 2Q00
200 0.022 100 520 6400 170 115 220 2500 APT20M22B2FLC 2Q00
0.018 100 625 7600 200 140 220 3000 APT20M18B2FLC 2Q00
1000 0.500 21 520 5000 145 200 250 2500 APT10050LFLC 2Q00
500 0.140 37 450 4100 120 115 250 1600 APT5014LFLC 2Q00
0.100 47 520 5600 155 155 250 2500 APT5010LFLC 1Q00 TO-264
0.080 58 625 6700 185 190 250 3000 APT50M80LFLC 2Q00
200 0.022 100 520 6400 170 115 220 2500 APT20M22LFLC 2Q00
0.018 100 625 7600 200 140 220 3000 APT20M18LFLC 2Q00
1000 0.500 25 450 5000 145 200 250 2500 APT10050JFLC 2Q00
0.250 34 700 11300 355 400 250 3600 APT10025JFLC 2Q00 ISOTOP®
500 0.100 44 450 5600 155 155 250 2500 APT5010JFLC 1Q00
0.080 53 520 6700 185 190 250 3000 APT50M80JFLC 2Q00
0.050 77 700 12600 340 345 250 3600 APT50M50JFLC 2Q00
MOS VITM AVAILABLE IN HERMETIC PACKAGES
NEW
L C Series - POWER MOS VITM FREDFETs
7
What is a Linear MOSFET?
A MOSFET specifically designed to be more
robust than a standard MOSFET when
operated with concurrent high voltage and
high current near DC conditions
(>100msecs).
APT Technology Innovation
A low gain (low packing density) device
provides the best SOA performance at high
voltage. APT has modified its proprietary
interdigitated MOSFET technology to
develop a lower gain device with enhanced
performance in high voltage, linear
T ypical Applications:
-Active load above 200 volts such as DC
dynamic loads for testing power supplies,
batteries, fuel cells, etc.
-High voltage, high current constant cur-
rent sources.
LINEAR MOSFET’S
BVDSS RDS(ON) ID(Cont.) PDSOA1 APT Package
Volts Ohms Amps Watts Watts Part No. Style
1000 0.60 18.0 520 325 APL1001J ISOTOP®
500 0.12 43.0 520 325 APL501J
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SOT-227
GS
S
D
G
D
S
*ISOTOP®[J]
LINEAR MOSFETs
LINEAR MOSFETs
*Not to Scale
NEW
applications. This new Linear MOSFET
provides 1.5-2.0 times the DC SOA
capability at high voltage compared to
previous APT technologies.
8
Po w er MOS V® MOSFETs
A new generation of high power, high voltage
Power MOSFETs .... Based on a patented self aligned
interdigitated open cell structure, this new generation
of MOSFETs offers many advantages over our
previous MOS IV® generation and over industry
standard, closed cell devices.
Lower RDS(ON) .... A 25% reduction in on-resistance
is gained by employing shallower junctions and
“overactive area” bonding to increase the channel
packing density per unit of silicon. The packing
density has been optimized to minimize the JFET
resistance and capacitances.
Faster Switching .... Power MOS V® utilizes a low
resistance aluminum metal gate structure. This allows
for faster gate signal propagation than is possible with
conventional polysilicon gate structures. Power MOS
V® employs shorter gate f ingers and a more ef f icient
gate bus structure than our previous generation to
further reduce the series gate resistance. Multiple
bond pads and wires for both source and gate contacts
have also reduced impedances. The result is
decreased on, rise, delay and fall times. Total
switching time has been reduced by up to 60% over
our previous generation.
Avalanche Energy Rated .... All Power MOS V®
devices are 100% tested and guaranteed for avalanche
energy.
Low Leakage Current .... Process improvements
have made possible a substantial decrease over our
previous generation. Maximum values for most
products are now specified at 25µA at 25°C and
250µA at 125°C.
Rugged Gate .... Improvements in gate oxide
processing allow for specification of a high gate
rupture voltage. All Power MOS V® MOSFETs are
specified for ± 30V continuous operation and ± 40V
transient operation.
Lower Cost .... A less complex fabrication process,
improved manufacturing yields and reduced cycle
times have all contributed to a more cost-effective
device.
Comparison of Lowest R DS(ON) in TO-247 P ack age Between New Generation P ower MOS V®
and Previous Generation Power MOS IV®
Breakdown
Voltage (V)
1200
1000
800
600
500
400
300
200
100
New Generation
Power MOS V®
RDS(ON) (m
W
)
1500
860
560
250
150
120
70
38
19
Previous Generation
Power MOS IV®
RDS(ON) (m
W
)
---
1000
750
300
200
160
85
45
25
Improvement
New
14%
25%
17%
25%
25%
18%
16%
24%
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POWER MOS V® MOSFETs
BVDSS RDS(ON) ID(Cont.) PDCiss(pF) EAS APT Package
Volts Ohms Amps Watts Typ mJ Part No. Style
1200 1.600 8 280 3050 1210 APT1201R6BVR
1.500 10 370 3700 1300 APT1201R5BVR
1000 1.000 11 280 3050 1210 APT1001RBVR
0.860 13 370 3700 1300 APT10086BVR
800 0.750 12 260 2700 960 APT8075BVR
0.650 13 280 3050 1210 APT8065BVR
0.560 16 370 3700 1300 APT8056BVR
600 0.450 15 250 2600 960 APT6045BVR
0.350 18 280 3450 1210 APT6035BVR
0.300 21 300 3750 1300 APT6030BVR
0.250 25 370 4300 1300 APT6025BVR
500 0.280 20 250 2650 960 APT5028BVR
0.240 22 280 3600 1210 APT5024BVR
0.200 26 300 3700 1300 APT5020BVR
0.170 30 370 4400 1300 APT5017BVR
0.150 32 370 4400 1300 APT5015BVR
400 0.200 23 250 2650 960 APT4020BVR
0.160 27 280 3350 1210 APT4016BVR
0.140 28 300 3600 1300 APT4014BVR
0.120 37 370 4500 1300 APT4012BVR
300 0.085 40 300 4100 1300 APT30M85BVR
0.070 48 370 4890 1300 APT30M70BVR
200 0.045 56 300 4050 1300 APT20M45BVR
0.040 59 300 4050 1300 APT20M40BVR
0.038 67 370 5100 1300 APT20M38BVR
100 0.025 75** 300 4300 1500 APT10M25BVR
0.019 75 370 5100 1500 APT10M19BVR
*TO-247[B]
*T -MAX™ [B2]
*Not to Scale
T-Max
TO-247
** IDmax limited by package
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Any devices offered in the TO-264 package can be made available in the T-MAX™.
See page 23 for details.
1200 0.600 20 625 7700 3000 APT12060B2VR NEW
1000 0.500 21 520 6600 2500 APT10050B2VR
0.400 25 625 7800 3000 APT10040B2VR NEW
800 0.300 27 520 6600 2500 APT8030B2VR
0.240 33 625 7800 3000 APT8024B2VR NEW
600 0.150 38 520 7500 2500 APT6015B2VR
0.110 49 625 8800 3000 APT6011B2VR NEW
500 0.140 37 450 5600 1600 APT5014B2VR
0.100 47 520 7400 2500 APT5010B2VR
0.085 56 625 8700 3000 APT50M85B2VR NEW
0.080 58 625 8700 3000 APT50M80B2VR NEW
200 0.022 100** 520 8500 2500 APT20M22B2VR
0.018 100** 625 10,000 3000 APT20M18B2VR NEW
100 0.011 100** 520 8600 2500 APT10M11B2VR
0.009 100** 625 10,000 3000 APT10M09B2VR NEW
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POWER MOS V® MOSFETs
BVDSS RDS(ON) ID(Cont.) PDCiss(pF) EAS APT Package
Volts Ohms Amps Watts Typ mJ Part No. Style
1200 0.800 16 520 6500 2500 APT12080LVR
0.600 20 625 7700 3000 APT12060LVR NEW
1000 0.500 21 520 6600 2500 APT10050LVR
0.400 26 625 7800 3000 APT10040LVR NEW
800 0.300 27 520 6600 2500 APT8030LVR
0.240 33 625 8800 3000 APT8024LVR NEW
600 0.200 30 450 5600 1600 APT6020LVR
0.150 38 520 7500 2500 APT6015LVR
0.110 49 625 8800 3000 APT6011LVR NEW
500 0.140 37 450 5600 1600 APT5014LVR
0.100 47 520 7400 2500 APT5010LVR
0.085 56 625 8700 3000 APT50M85LVR NEW
0.080 58 625 8700 3000 APT50M80LVR NEW
400 0.070 57 520 7410 2500 APT40M70LVR
300 0.040 76 520 8500 2500 APT30M40LVR
200 0.022 100 520 8500 2500 APT20M22LVR
0.018 100** 625 10,000 3000 APT20M18LVR NEW
100 0.011 100 520 8600 2500 APT10M11LVR
0.009 100** 625 10,000 3000 APT10M09LVR NEW
1200 0.800 15 450 6500 2500 APT12080JVR
0.400 26 700 15000 3600 APT12040JVR
1000 0.500 19 450 6600 2500 APT10050JVR
0.430 22 500 7500 1300 APT10043JVR
0.250 34 700 15000 3600 APT10025JVR
800 0.300 25 450 6600 2500 APT8030JVR
0.280 28 500 7700 1300 APT8028JVR
0.150 44 700 14715 3600 APT8015JVR
600 0.150 35 450 7500 2500 APT6015JVR
0.130 40 500 8800 1300 APT6013JVR
0.075 62 700 16500 3600 APT60M75JVR
500 0.100 44 450 7400 2500 APT5010JVR
0.085 50 500 9000 1300 APT50M85JVR
0.050 77 700 16800 3600 APT50M50JVR
400 0.070 53 450 7410 2500 APT40M70JVR
0.035 93 700 16000 3600 APT40M35JVR
300 0.040 70 450 8500 2500 APT30M40JVR
0.019 130 700 18000 3600 APT30M19JVR
200 0.022 97 450 8500 2500 APT20M22JVR
0.019 112 500 9700 1300 APT20M19JVR
0.011 175 700 18000 3600 APT20M11JVR
100 0.011 144 450 8600 2500 APT10M11JVR
0.007 225 700 18000 3600 APT10M07JVR
*ISOTOP®[J]
(ISOLATED BASE)
SOT-227
GS
S
D
*Not to Scale
*TO-264[L]
TO-264
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POWER MOS V® MOSFETs
BVDSS RDS(ON) ID(Cont.) PDCiss(pF) EAS APT Package
Volts Ohms Amps Watts Typ mJ Part No. Style
POWER MOS V® MOSFET/FRED “COMBI” PRODUCTS
500 0.100 44 450 7410 2500 APT5010JVRU2
500 0.100 44 450 7410 2500 APT5010JVRU3
POWER FACTOR CORRECTION “BOOST” CONFIGURATION
MOTOR DRIVE “BUCK” CONFIGURATION
“BOOST” CONFIGURA TION “BUCK” CONFIGURATION
SOT-227
23
4
1
*ISOTOP®[J]
(ISOLATED BASE)
** IDmax limited by package *Not to Scale
**
**
D
3
PAK
*D3 P AK[S]
800 0.650 13 280 3050 1210 APT8065SVR
600 0.450 15 250 2600 960 APT6045SVR
0.350 18 280 3450 1210 APT6035SVR
500 0.280 20 250 2650 960 APT5028SVR
0.200 26 300 3700 1300 APT5020SVR
0.170 30 370 4400 1300 APT5017SVR
200 0.045 56 300 4050 1300 APT20M45SVR
0.038 67 370 5100 1300 APT20M38SVR
100 0.025 75 300 4150 1500 APT10M25SVR
0.019 75 370 5100 1500 APT10M19SVR
1000 1.000 11 280 3050 1210 APT1001RSVR
0.860 13 370 3700 1300 APT10086SVR
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Any devices offered in the TO-247 package can be made available in D3 PAK. See page 23 for details.
• Reduced parts count vs discretes.
• Improved circuit performance due to reduced inductance.
Consult Factory for other voltages.
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POWER MOS V® FREDFETs
*TO-247[B]
TO-247
BVDSS RDS(ON) ID(Cont.) PDCiss(pF) EAS trr(nsecs) APT Package
Volts Ohms Amps Watts Typ mJ Max Part No. Style
1000 1.100 11 280 3050 1210 200 APT1001R1BVFR
0.860 13 370 3700 1300 200 APT10086BVFR
800 0.750 12 260 2700 960 250 APT8075BVFR NEW
0.650 13 280 3050 1210 200 APT8065BVFR
0.560 16 370 3700 1300 200 APT8056BVFR
600 0.250 25 370 4300 1300 250 APT6025BVFR NEW
500 0.240 22 280 3600 1210 250 APT5024BVFR
0.200 26 300 3700 1300 250 APT5020BVFR
0.170 30 370 4400 1300 250 APT5017BVFR
300 0.085 40 300 4100 1300 200 APT30M85BVFR
0.070 48 370 4890 1300 225 APT30M70BVFR
200 0.045 56 300 4050 1300 200 APT20M45BVFR
0.038 67 370 5100 1300 240 APT20M38BVFR
100 0.025 75 300 4300 1500 200 APT10M25BVFR
0.019 75 370 5100 1500 200 APT10M19BVFR
v
FREDFET Technology .... Using a proprietary
platinum lifetime control process, the performance of
the intrinsic body drain diode of the Power MOS V®
MOSFET is improved.
Faster Intrinsic Diode Recovery .... The reverse
recovery time has been reduced to 250ns maximum,
eliminating the external FRED and Schottky rectifiers
in certain circuit configurations.
Improved Ruggedness .... The ruggedness of the
intrinsic diode has also been improved, allowing for a
commutative dv/dt rating of 5V/ns.
Other Benefits .... The platinum process provides the
added advantages of soft recovery, lower leakage
current, lower recovery charge and more temperature
independent performance than alternative processes
used to improve intrinsic diode performance.
Applications for FREDFETs .... Power MOS V®
FREDFETs should be specified under the following
conditions:
• Whenever the intrinsic body drain diode of the
MOSFET is expected to carry forward current.
Examples are Half Bridge, H-Bridge and 3-Phase
Bridge circuit topologies.
• In soft switched circuits, where the body diode
carries current. Examples are Phase Shift Controlled
H-Bridge or Resonant circuit topologies.
MOSFET vs FREDFET Intrinsic Diode trr
FREDFET
MOSFET
*Not to Scale
D
3
PAK
*D3 P AK[S]
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Any devices offered in the TO-247 package can also be made available in D3 PAK See page 23 for details.
** IDmax limited by package
Any devices offered in standard MOSFETs can be
made available as FREDFETs. See page 23 for details.
500 0.200 26 300 3700 300 250 APT5020SVFR
200 0.045 56 300 4050 1300 200 APT20M45SVFR
13
SOT-227
GS
S
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POWER MOS V® FREDFETs
BVDSS RDS(ON) ID(Cont.) PDCiss(pF) EAS trr(nsecs) APT Package
Volts Ohms Amps Watts Typ mJ Max Part No. Style
1000 0.400 25 625 7800 3000 250 APT10040B2VFR NEW
800 0.300 27 520 6600 2500 300 APT8030B2VFR
0.240 33 625 7800 3000 250 APT8024B2VFR NEW
600 0.110 49 625 8800 3000 250 APT6011B2VFR NEW
500 0.100 47 520 7400 2500 250 APT5010B2VFR
0.085 56 625 8700 3000 250 APT50M85B2VFR NEW
0.080 58 625 8700 3000 250 APT50M80B2VFR NEW
20 0 0.022 100** 520 8500 2500 220 APT20M22B2VFR
0.018 100** 625 10,000 3000 220 APT20M18B2VFR NEW
10 0 0.009 100** 625 10,000 3000 220 APT10M09B2VFR NEW
1000 0.500 21 520 6600 2500 300 APT10050LVFR
0.400 25 625 7800 3000 250 APT10040LVFR NEW
800 0.300 27 520 6600 2500 300 APT8030LVFR
0.240 33 625 7800 3000 250 APT8024LVFR NEW
600 0.110 49 625 8800 3000 250 APT6011LVFR NEW
500 0.100 47 520 7400 2500 250 APT5010LVFR NEW
0.085 56 625 8700 3000 250 APT50M85LVFR NEW
300 0.040 76 520 8500 2500 240 APT30M40LVFR
20 0 0.022 100** 520 8500 2500 220 APT20M22LVFR
0.018 100** 625 10,000 3000 220 APT20M18LVFR NEW
10 0 0.009 100** 625 10,000 3000 220 APT10M09LVFR NEW
1000 0.500 19 450 6600 2500 300 APT10050JVFR
0.250 34 700 15000 3600 300 APT10025JVFR
800 0.300 25 450 6600 2500 300 APT8030JVFR
0.150 44 700 14715 3600 280 APT8015JVFR
500 0.100 44 450 7400 2500 250 APT5010JVFR
0.085 50 500 9000 1300 300 APT50M85JVFR
0.050 77 700 16300 3600 300 APT50M50JVFR
300 0.040 70 450 8500 2500 240 APT30M40JVFR
0.019 130 700 18000 3600 300 APT30M19JVFR
200 0.022 97 450 8500 2500 220 APT20M22JVFR
0.011 175 700 18000 3600 250 APT20M11JVFR
*Not to Scale
*TO-264[L]
*ISOTOP®[J]
(ISOLA TED BASE)
** IDmax limited by package
*T-MAX™[B2]
T-Max
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Any devices offered in the TO-264 package can also be made available in T-Max™. See page 23 for details.
TO-264
14
NPT Technology .... Non-Punch-Through IGBTs
are manufactured by fabricating the MOSFET
structure on the surface of a lightly doped,
n-substrate. No epi layer needs to be grown on the
substrate. The w afer is thinned to 100µm after all
high temperature processes are completed to reduce
the n-drift region. The pn junction required on the
back of the wafer is formed using a p+ implant and
a light diffusion. Making the p+ region only a few
µm thick keeps the voltage drop low in this region
and controllable within very tight tolerances
throughout the wafer. This construction provides
an optimal tradeoff between VCE(SAT), switching
speed and ruggedness. At full rated current, the
VCE(SAT) may be higher than PT technologies, but
under normal operating currents the difference is
negligible.
Faster Switching .... Faster turn-off speeds and
lower tail currents are key advantages of NPT
technology . This is primarily due to the generation
of fewer minority carriers during operation in NPT
devices.
Improved High Temperature Operation .... The
turn-off speed and tail current of an NPT IGBT is
not as temperature dependent as PT devices. These
parameters remain relatively constant over the
entire operating temperature range, resulting in
approximately 50% less dynamic losses at high
temperatures.
Improved Ruggedness .... NPT technology IGBTs
are avalanc he energy, SCSOA and RBSOA rated.
IGBT Technology
Fast IGBT Family .... Designated by the “GF”
in the part number, these devices are designed
for operation up to 40kHz in hard switching ap-
plications.
Thunderbolt IGBT™ Family .... Designated
by the “GT” in the part number, these devices
are designed for operation up to 150kHz hard
switching and 300kHz in resonant
applications.
Easy Paralleling .... A positive temperature
coefficient of VCE(SAT) makes paralleling of NPT IGBTs
as easy as with MOSFETs.
Tighter Electrical Parameters Distribution.... NPT
technology has fewer and more easily controlled
processing steps than with PT technologies. The end
user can expect less lot-to-lot variation of electrical
parameters than is possible with PT devices.
Low Leakage Current .... No lifetime control is used
in producing NPT IGBTs, eliminating the major cause
of leakage current in alternative technologies.
NPT Technology
vs
PT Technology
n- p+
n-
PASSIVATION
p
p+
OXIDE DIELECTRIC
POLY
AL SOURCE METAL
EMITTER
n+
PASSIVATION
p
OXIDE DIELECTRIC
POLY
AL SOURCE METAL
EMITTER
n+
MOS Structure
Thickness: NPT=100µm PT=400µm
p+ Collector
n- Substrate n- epi Layer
n++ epi Layer
p++ Substrate/
Collector
15
NPT IGBT
Max IC1
BVCES VCE(ON) (25°C) IC2 PDPart
Volts Volts Amps Amps Watts Number Package
1200 3.0 22 11 125 APT11GF120KR
3.2 32 20 200 APT20GF120KR
600 2.5 17 8 70 APT8GT60KR
2.5 25 12 125 APT12GT60KR TO-220
2.5 31 15 135 APT15GT60KR
2.5 40 20 175 APT20GT60KR
2.5 58 30 250 APT30GT60KR
1700 3.5 25 15 310 APT15GF170BR NEW
1200 3.2 32 20 200 APT20GF120BR
3.2 52 33 300 APT33GF120BR
600 2.5 25 12 125 APT12GT60BR TO-247
2.5 31 15 135 APT15GT60BR
2.5 40 20 175 APT20GT60BR
2.5 58 30 250 APT30GT60BR
2.5 80 40 350 APT40GT60BR
2.5 116 60 500 APT60GT60BR
600 2.7 75 50 300 APT50GF60BR
600 2.5 90 60 375 APT60GT60JR ISOTOP®
1200 3.4 80 50 390 APT50GF120B2R T-MAX™
600 2.7 100 100 390 APT100GF60B2R
1200 3.4 80 50 390 APT50GF120LR TO-264
600 2.7 100 100 390 APT100GF60LR
1200 3.0 22 11 125 APT11GF120BRD
3.2 32 20 200 APT20GF120BRD TO-247
600 2.5 30 15 125 APT15GT60BRD
2.5 55 30 200 APT30GT60BRD
1200 3.2 52 33 300 APT33GF120B2RD T-MAX™
600 2.7 80 50 300 APT50GF60B2RD
1200 3.2 52 33 300 APT33GF120LRD TO-264
600 2.7 80 50 300 APT50GF60LRD
1200 3.4 60 40 390 APT40GF120JRD
3.4 75 50 460 APT50GF120JRD ISOTOP®
3.4 100 60 520 APT60GF120JRD
600 2.7 140 100 390 APT100GF60JRD
600 2.5 90 60 375 APT60GT60JRD
TO-220
*TO-220[K]
TO-247
*TO-247[B]
*TO-264[L]
TO-264
*T-MAX™[B2]
T-Max
*ISOTOP®[J]
SOT-227
GE
E
C
COMBI (IGBT + FRED)
*Not to Scale
**
**
**
** IC1 limited by package
DISCRETE (IGBT ONL Y)
Fast
Fast
Fast
Fast
Fast Thunderbolt
Thunderbolt
Thunderbolt
16
FRED Technology
FRED Technology .... Our proprietary platinum
lifetime control process results in performance
advantages vs FREDs built with alternative
processes for lifetime control. Use of platinum
produces a “softer” and faster recovery with an
optimal trade-off between VF and trr.
Improved High Temperature Operation .... The
reverse recovery of silicon diodes degrades as
operating temperatures increase. The adv antage
of using platinum for lifetime control is less
degradation of performance at high temperatures.
To assist the designer, trr is specified on all
datasheets under operating conditions; i.e., at Tj
= 125°C, maximum rated current and dI/dt and
80% rated voltage.
TO-247
123
TO-264
**All Ratings Are Per Leg
CENTER-TAP DUAL FREDS
VRMM IF(AV) trr2(25°C) trr3(100°C) VF(25°C) IRM(25°C) APT Package
Volts Amps** nsec T yp nsec Typ V olts µ A Part No. Style
1000 15 60 120 2.3 250 APT15D100BCT
30 60 120 2.3 250 APT30D100BCT
600 15 40 80 1.8 150 APT15D60BCT
30 50 80 1.8 250 APT30D60BCT
400 15 40 70 1.5 150 APT15D40BCT
30 45 70 1.5 250 APT30D40BCT
200 30 40 60 1.15 250 APT30D20BCT
1000 60 70 130 2.5 250 APT60D100LCT
600 60 70 90 1.8 250 APT60D60LCT
400 60 70 90 1.5 250 APT60D40LCT
200 60 36 71 1.15 250 APT60D20LCT
*Not to Scale
TO-247
123
TO-247
123
*TO-247[BCT]
Common Cathode
*TO-264[LCT]
Common Cathode
CONSULT FACTORY FOR THESE OR OTHER
PACKAGE CONFIGURATIONS
Half Bridge or Phase Leg
17
DISCRETE FREDS
1200 30 70 160 2.5 250 APT30D120B
60 70 130 2.5 250 APT60D120B
1000 30 60 120 2.3 250 APT30D100B
60 70 130 2.5 250 APT60D100B
600 15 40 80 1.8 150 APT15D60B
30 50 80 1.8 250 APT30D60B
60 70 90 1.8 250 APT60D60B
400 30 45 70 1.5 250 APT30D40B
60 40 65 1.5 250 APT60D40B
200 30 40 60 1.15 250 APT30D20B
60 36 71 1.15 250 APT60D20B *TO-247[B]
TO-247
*Not to Scale
VRMM IF(AV) trr2(25°C) trr3(100°C) VF(25°C) IRM(25°C) APT Package
Volts Amps nsec T yp nsec T yp Volts µ A Part No. Style
1000 15 60 120 2.3 250 APT15D100K
600 15 40 80 1.8 150 APT15D60K
400 15 40 70 1.5 150 APT15D40K
300 15 35 60 1.4 150 APT15D30K
1200 30 70 160 2.5 250 APT2X30D120J
60 70 130 2.5 250 APT2X60D120J
100 130 215 2.5 250 APT2X100D120J
1000 30 60 120 2.3 250 APT2X30D100J
60 70 130 2.5 250 APT2X60D100J
100 80 160 2.5 250 APT2X100D100J
600 30 50 80 1.8 250 APT2X30D60J
60 70 90 1.8 250 APT2X60D60J
100 60 92 2.0 250 APT2X100D60J
400 30 45 70 1.5 250 APT2X30D40J
60 70 90 1.5 250 APT2X60D40J
100 60 140 1.5 500 APT2X100D40J
200 60 36 71 1.15 250 APT2X60D20J
100 70 150 1.1 500 APT2X100D20J
1200 30 70 160 2.5 250 APT2X31D120J
60 70 130 2.5 250 APT2X61D120J
100 130 215 25 250 APT2X101D120J
1000 30 60 120 2.3 250 APT2X31D100J
60 70 130 2.5 250 APT2X61D100J
100 80 160 2.5 250 APT2X101D100J
600 30 50 80 1.8 250 APT2X31D60J
60 70 90 1.8 250 APT2X61D60J
100 60 92 2.0 250 APT2X101D60J
400 30 45 70 1.5 250 APT2X31D40J
60 70 90 1.5 250 APT2X61D40J
100 60 140 1.5 500 APT2X101D40J
200 60 36 71 1.15 250 APT2X61D20J
100 70 150 1.1 500 APT2X101D20J
TO-220
K2
A2
K1
A1
SOT-227
A2 K2
K1
A1
Parallel
K2 A2
A1 K1
SOT-227
A1 K2
A2
K1
Anti-Parallel
*ISOTOP®[J]
Antiparallel Configuration
(ISOLATED BASE)
*ISOTOP®[J]
Parallel Configuration
(ISOLA TED BASE)
*TO-220[K]
18
D
3
PAK
*D3 P AK[S]
600 30 50 80 1.8 250 APT30D60S
400 30 45 70 1.5 250 APT30D40S
200 30 40 60 1.15 250 APT30D20S
DISCRETE SURFACE MOUNT FREDS
VRMM IF(AV) trr2(25°C) trr3(100°C) VF(25°C) IRM(25°C) APT Package
Volts Amps nsec T yp nsec T yp Volts µA Part No. Style
ULTRAFAST SOFT RECOVERY DIODE PRODUCTS
600 30 20 35 4.0 250 APT30DS60B
15 12.5 25 4.0 150 APT15DS60B
HIGHER FREQUENCY FREDS
12
TO-247
VRMM IF(AV) trr2(25°C) trr3(100°C) VF(25°C) IRM(25°C) APT Package
Volts Amps nsec T yp nsec T yp Volts µ A Part No. Style
Extremely Fast Recovery .... These FREDs are
capable of replacing GaAs rectifiers in high
frequency applications up to 2 MHz, at a fraction
of the cost. By using two (2), much heavier
platinum doped 300V FREDs in series, a
considerable decrease in the reverse recovery time
is achieved vs standard 600V FREDs. This heavier
concentration of platinum produces a FRED that
is specifically designed for higher frequency
applications where reduction of switching losses
is most important and a higher VF specification can
be tolerated.
Higher F requency FREDs
Standard FRED[1]
vs
Higher Frequency FRED[2]
*TO-247[B]
[1]
*Not to Scale
[2]
300 30 20 35 2.0 250 APT30DS30B NEW
15 12.5 25 2.0 150 APT15DS30B NEW
19
TO-247
TO-247
RF MOSFETs
RF MOSFETs
VDD POUT GPS Rqq
qq
qJC APT
Volts Watts dB(typ) °C/W Pin Out Part No.
50 125 21 @ 13.56 MHz 0.75 Figure 1 ARF440
125 21 @ 13.56 MHz 0.75 Figure 2 ARF441
100 200 22 @ 13.56 MHz 0.75 Figure 1 ARF442
200 22 @ 13.56 MHz 0.75 Figure 2 ARF443
300 300 18.7 @ 13.56 MHz 0.60 Figure 1 ARF444
300 18.7 @ 13.56 MHz 0.60 Figure 2 ARF445
250 250 15 @ 40.68 MHz 0.55 Figure 1 ARF446
250 15 @ 40.68 MHz 0.55 Figure 2 ARF447
150 250 15 @ 40.68 MHz 0.55 Figure 1 ARF448A
250 15 @ 40.68 MHz 0.55 Figure 2 ARF448B
150 150 13 @ 81.36 MHz 0.76 Figure 1 ARF449A
150 13 @ 81.36 MHz 0.76 Figure 2 ARF449B
150 500 13 @ 81.36 MHz 0.26 Figure 3 ARF450 NEW
*TO-247
*Not to Scale
Gate
Gate
Source
Drain
Source
Drain
Figure 1
Figure 2
RF T echnology.... APT RF MOSFETs are optimized
for high power Class C, D and E operation from 1-
100 MHz. The die geometry has been designed for
RF high power eff icienc y and lo w gate loss. The RF
MOSFETs are mounted on an isolation substrate to
create a T O-247 common source conf iguration. The
source is directly connected to the center pin and
heatsink tab; no e xternal insulator is necessary. This
provides maximum thermal efficiency without the
added expense and assembly problems of drain
isolation. Internally, symmetric wire bonding
schemes insure that both pinout versions of each
device are perfect mirror image pairs. This
configuration allows for easy layout of push-pull and
parallel pairs for circuit board symmetry and
separation of input and output sections.
High Voltage Operation .... Historically, all RF
MOSFETs operated at a maximum of 50V. By
combining high voltage MOSFET technology with
specific RF die geometries, this limitation has been
removed. RF operation at up to 300V is now possible.
Why Higher Voltage .... Higher operating voltage
means higher load impedances. For 300W of RF
output at 50V, the load is less than 4 ohms. At 125V,
the load impedance is 25 ohms. The higher impedance
allows for fewer transformers and combiners. Parallel
devices can still operate into a reasonable and
convenient load impedance. Increasing the operating
voltage also lowers the current required for any given
power output, reducing the size and weight of other
components.
Lower Cost ....
• No insulators required
• Maximum thermal efficiency. The internal BeO
insulator is more efficient than external insulators.
• Simplified board layout due to symmetric pairs
configuration
Note: The ARF446 through ARF450 devices are
based on the latest MOS V® RF technology and are
the preferred devices for all new designs. The ARF440
through ARF445 are based on Power MOS IV®
technology and are not recommended for new
designs.
Figure 3
20
HERMETIC MOSFET PRODUCTS
Optional
BVDSS RDS(ON) ID(Cont.) PDCiss(pF) Qg(nC) APT Surface Package
Volts Ohms Amps Watts Typ Typ Part No. Mount Pkg. Style
1000 4.000 3.3 100 805 35 APT1004RGN CoolPack1
1000 2.000 5.5 150 1530 66 APT1002RCN CoolPack1
4.000 3.6 125 805 35 APT1004RCN CoolPack1
600 0.450 11.8 150 2600 115 APT6045CVR CoolPack1
500 0.320 14.0 150 2650 110 APT5032CVR CoolPack1
0.400 13.0 150 1430 71 APT5040CNR CoolPack1
0.415 12.0 150 2410 103 2N7228/JX/JV CoolPack1
400 0.300 15.0 150 1500 71 APT4030CNR CoolPack1
0.315 14.0 150 2400 100 2N7227/JX/JV CoolPack1
1000 0.88 11.0 250 3700 185 APT10088HVR CoolPack2
1.10 9.0 200 3050 150 APT1001R1HVR CoolPack1
800 0.58 13.5 250 3700 185 APT8058HVR CoolPack2
0.67 11.5 200 3050 150 APT8067HVR CoolPack1
600 0.27 20.0 250 4300 185 APT6027HVR CoolPack2
0.37 15.5 200 3450 140 APT6037HVR CoolPack2
500 0.19 24.0 250 4400 200 APT5019HVR CoolPack2
0.26 18.5 200 3600 140 APT5026HVR CoolPack2
400 0.14 28.0 250 4500 195 APT4014HVR CoolPack2
0.18 22.0 200 3350 135 APT4018HVR CoolPack2
200 0.040 45.0 250 5100 148 APT20M40HVR CoolPack2
*TO-257[G]
(ISOLATED)
*TO-254[C]
(ISOLATED)
*TO-258[H]
(ISOLATED)
*Not to Scale
21
HERMETIC MOSFET PRODUCTS
BVDSS RDS(ON) ID(Cont.) PDCiss(pF) Qg(nC) APT Surface Package
Volts Ohms Amps Watts Typ Typ Part No. Mount Pkg. Style
1000 1.10 9.0 200 3050 150 APT1001R1AVR CoolPack1
800 0.65 11.5 200 3050 150 APT8065AVR CoolPack1
600 0.32 17.5 235 3750 160 APT6032AVR CoolPack2
0.35 16.0 200 3450 140 APT6035AVR CoolPack2
500 0.22 21.0 235 3700 150 APT5022AVR CoolPack2
0.24 18.5 200 3600 140 APT5024AVR CoolPack2
0.30 14.7 155 2650 110 APT5030AVR CoolPack1
400 0.15 25.5 235 3600 160 APT4015AVR CoolPack2
300 0.090 33.0 235 4100 130 APT30M90AVR CoolPack2
100 0.030 65.0** 235 4300 150 APT10M30AVR CoolPack2
1000 0.57 17.3 450 6600 335 APT10057WVR CoolPack3
600 0.17 31.5 450 7500 315 APT6017WVR CoolPack3
500 0.12 40.0 450 7400 312 APT5012WVR CoolPack3
400 0.082 44.0 450 7410 330 APT40M82WVR CoolPack3
200 0.026 65.0 450 8500 290 APT20M26WVR CoolPack3
1000 0.250 33.0 625 15000 660 APT10025PVR
600 0.075 60.5 625 16500 700 APT60M75PVR
500 0.05 74.5 625 16300 690 APT50M50PVR
400 0.035 89.0 625 16000 700 APT40M35PVR
200 0.013 146.0 625 18000 630 APT20M13PVR
*Not to Scale
*TO-267[W]
(ISOLATED)
*P-PACK
(ISOLATED)
*CoolPackTM 1
.450X.625X.130 inches *CoolPackTM 2
.550X.800X.145 inches *CoolPackTM 3
.980X1.23X.145 inches
CONSULT FACTORY FOR INFORMATION ON SURFACE MOUNT PRODUCTS
CoolPackTM is a trademark of Microsemi Corporation
*TO-3[A]
(NON-ISOLATED)
** IDmax limited by package
CONSULT FACTORY FOR INFORMATION ON FRED, FREDFET AND IGBTs IN
ANY HERMETIC PACKAGE.
22
bb
Max IC1
BVCES Vce (on) 25C IC2 PDAPT
Volts Volts Amps Amps Watts Part No. Package
600 2.5 40 20 175 APT20GT60AR
2.5 58 30 250 APT30GT60AR TO-3 [A]
2.7 65** 50 300 APT50GF60AR
600 2.5 35** 20 175 APT20GT60CR TO-254 [C]
2.5 35** 30 250 APT30GT60CR
600 2.7 65** 50 300 APT50GF60HR
1200 3.2 52 33 300 APT33GF120HR TO-258 [H]
3.4 65** 50 300 APT50GF120HR
SEE PAGE 14 FOR TECHNOLOGY FEATURES AND BENEFITS
MOSFET PRODUCTS
HERMETIC NPT IGBT
HERMETIC FREDS
VRMM IF(AV) trr2(25C) trr3(100C) VF(25C) IRM(25C) APT
Volts Amps nsec TYP nsec TYP Volts mA Part No. Configuration*** Package
600 15 40 80 2.0 150 APT15D60C Discrete
4 00 1 5 4 0 7 0 1.7 1 50 APT15D40C Discrete TO-254[C]
300 15 35 60 1.6 150 APT15D30C Discrete
600 30 50 80 2.0 250 APT30D60H Discrete
60 70 90 2.0 250 APT60D60H Discrete
400 30 45 70 1.7 250 APT30D40H Discrete
60 40 65 1.7 250 APT60D40H Discrete
200 30 40 60 1.4 250 APT30D20H Discrete TO-258[H]
60 36 71 1.5 250 APT60D20H Discrete
600 30 50 80 2.0 250 APT30D60HCT Center Tap
400 30 45 70 1.7 250 APT30D40HCT Center Tap
200 30 40 60 1.4 250 APT30D20HCT Center Tap
SEE PAGE 16 FOR TECHNOLOGY FEATURES AND BENEFITS
***Contact factory for other current, volta ges, package availability and Half Bridge or Common Anode Configuration
HERMETIC HIGHER FREQUENCY FREDS
VRMM IF(AV) trr2(25C) trr3(100C) VF(25C) IRM(25C) Part
Volts Amps nsec TYP nsec TYP Volts mA Number Package
600 30 20 35 4.0 250 APT30DS60H TO-258 [H]
15 12.5 25 4.0 150 APT15DS60H
300 30 20 35 2.0 250 APT30DS30C TO-254 [C]
15 12.5 25 2.0 150 APT15DS30C
SEE PAGE 18 FOR TECHNOLOGY FEATURES AND BENEFITS
** IDmax limited by package
NEW
NEW
NEW
23
Hermetic Products
APT is a MIL-PRF-19500 certified supplier and can provide TX, TXV and space level
processing. In addition to the MOSFETs shown in this catalog, other MOSFETs, FREDFETs,
IGBTs, FREDs, or combinations of these products can be provided in hermetic packages.
If you do not see the product you need, or if you have questions concerning processing
capabilities or certification levels, please contact your local representati v e or APT directly.
Custom, Value-Added Solutions To Meet Your
Specific Power Application Requirements
In addition to the broad line of leading edge products in this catalog, APT is dedica ted to
providing inno v ative solutions for our customers. This means working with our customers
to solve their procurement, manufacturing or application problems. We are known as the
supplier that provides solutions that others cannot, or will not, pro vide. These include, but
are not limited to:
• Custom products including special designs, processes, and packaging.
• Supply chain management requirements.
• Strategic inventories to allow for unexpected changes in demand.
• Special testing.
• Thermal and power management.
• Hi-Rel Testing/Screening
• Application Specific Power Modules (ASPM) where power semiconductors are
combined with driver and protection circuits to meet your specific application
requirements.
For additional information contact your local APT Representa tive
or APT directly.
NEW Hermetic
Products Brochure
Available
24
APT reserves the right to change, without notice, the specifications and information contained herein.
© 1999
is a registered trademark of Advanced Power Technology, Inc.
ISOTOP® is a registered trademark of SGS Thomson
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