V10KM120DU www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 2.5 A FEATURES 1 2 * Trench MOS Schottky technology 3 4 8 7 * Low forward voltage drop, low power losses * High efficiency operation * Meets MSL level 1, per LF maximum peak of 260 C 6 5 Available J-STD-020, * AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 FlatPAK 5 x 6 1 and / or 2 7, 8 3 and / or 4 5, 6 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS DESIGN SUPPORT TOOLS click logo to get started For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. MECHANICAL DATA Models Available PRIMARY CHARACTERISTICS IF(AV) 2x5A VRRM 120 V IFSM 100 A VF at IF = 5 A (TA = 125 C) 0.62 V TJ max. 175 C Package FlatPAK 5 x 6 Circuit configuration Separated cathode Case: FlatPAK 5 x 6 Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage V10KM120DU UNIT V10M12D VRRM IF(AV) (1) 120 V 5 A IF(AV) (2) 2.5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 100 A Operating junction temperature range TJ (3) -40 to +175 C Storage temperature range TSTG -55 to +175 C Maximum DC forward current per diode Notes (1) With infinite heatsink (2) Free air, mounted on recommended pad area (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 18-Jul-2018 Document Number: 87537 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V10KM120DU www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 2.5 A Instantaneous forward voltage per diode IF = 5.0 A IF = 2.5 A IF = 5.0 A VR = 90 V Reverse current per diode VR = 120 V Typical junction capacitance per diode SYMBOL TA = 25 C VF (1) TA = 125 C TA = 25 C TA = 125 C TA = 25 C TA = 125 C 4.0 V, 1 MHz IR (2) IR TYP. 0.64 - 0.81 0.89 0.54 - 0.62 0.70 0.01 - 0.8 - - 0.35 1.6 6 450 - (2) CJ MAX. UNIT V mA pF Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL TYP. MAX. RJA (1)(2) 100 - RJM (3) 3.0 4.0 Thermal resistance per diode UNIT C/W Notes (1) The heat generated must be less than thermal conductivity from junction to ambient: dP /dT < 1/R D J JA (2) Free air, mounted on recommended copper pad area; thermal resistance R JA - junction to ambient (3) Mounted on infinite heatsink; thermal resistance R JM - junction-to-mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE V10KM120DU-M3/H V10KM120DU-M3/I V10KM120DUHM3/H (1) V10KM120DUHM3/I (1) BASE QUANTITY DELIVERY MODE 0.10 H 1500 7" diameter plastic tape and reel 0.10 I 6000 13" diameter plastic tape and reel 0.10 H 1500 7" diameter plastic tape and reel 0.10 I 6000 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 18-Jul-2018 Document Number: 87537 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V10KM120DU www.vishay.com Vishay General Semiconductor 6 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) RthJM = 3 C/W 5 4 3 RthJA = 100 C/W 2 TM measured at cathode terminal mount typical values 1 0 0 25 50 75 100 125 150 175 100 TJ = 175 C TJ = 150 C 10 1 0.1 TJ = 125 C TJ = 100 C 0.01 TJ = 25 C 0.001 0.0001 0.00001 TJ = -40 C 0.000001 10 Ambient / Mount Temperature (C) 20 30 40 50 60 Fig. 1 - Maximum Forward Current Derating Curve 90 100 10 000 Junction Capacitance (pF) D = 0.8 Average Power Loss (W) 80 Fig. 4 - Typical Reverse Leakage Characteristics 4.0 D = 0.5 3.0 D = 1.0 D = 0.3 D = 0.2 2.0 D = 0.1 T 1.0 D = tp/T TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 tp 1 0.0 0 1 2 3 4 5 0.1 6 1 10 Average Forward Current (A) Transient Thermal Impedance (C/W) TJ = 175 C TJ = 150 C TJ = 125 C TJ = 100 C 1 TJ = 25 C TJ = -40 C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1000 Fig. 5 - Typical Junction Capacitance 100 10 100 Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Instantaneous Forward Current (A) 70 Percent of Rated Peak Reverse Voltage (%) 1.4 1.6 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 1000 Junction-to-ambient 100 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 18-Jul-2018 Document Number: 87537 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V10KM120DU www.vishay.com Vishay General Semiconductor 4 x L2 DIMENSIONS in inches (millimeters) 7 6 6xe 5 E E1 (E3) 2 x b1 8 F2 5 8xb 6 7 (d1) F1 F1 8 M E2 D D1 F2 4 3 Top View 4 2 1 D3 2 x D4 4 x L1 2 (8 x a) 1 3 (K) (2 x d2) D2 Bottom View (Dual Pad) 0.180 (4.56) 0.022 (0.56) Side View 0.055 (1.40) A 0.191 (4.84) c (8 x ) 0.259 (6.59) 0.082 (2.08) 0.030 (0.75) 0.039 (1.00) 0.219 (5.55) DIM. A (a) b b1 c D D1 D2 D3 D4 (d1) (d2) E E1 E2 (E3) e (K) L1 L2 M MIN. 0.035 0.013 0.013 0.008 0.197 0.189 0.154 0.020 0.063 0.238 0.228 0.157 0.039 0.019 0.012 0.128 0 INCHES NOM. 0.039 0.006 0.017 0.017 0.203 0.193 0.161 0.024 0.069 0.016 0.005 0.244 0.232 0.165 0.144 0.050 BSC 0.138 - 0.050 (1.27) 0.030 (0.75) PCB Footprint (Dual Pad) MAX. 0.043 0.020 0.020 0.014 0.209 0.197 0.169 0.031 0.075 0.250 0.236 0.173 - MIN. 0.89 0.32 0.32 0.20 5.00 4.80 3.90 0.50 1.60 6.05 5.80 4.00 - 0.043 0.031 0.148 10 1.00 0.48 0.30 3.25 0 MILLIMETERS NOM. 0.99 0.15 0.43 0.43 5.15 4.90 4.10 0.60 1.75 0.40 0.125 6.20 5.90 4.20 3.65 1.27 BSC 3.50 - MAX. 1.09 0.52 0.52 0.35 5.30 5.00 4.30 0.80 1.90 6.35 6.00 4.40 1.10 0.80 3.75 10 Notes * Dimensioning and tolerancing per ASME Y14.5-2009 * Dimensions D1 and E1 do not include mold flash or gate burrs * Dimension (XX) means reference only Revision: 18-Jul-2018 Document Number: 87537 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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