APT8024JLL 800V 29A 0.240 POWER MOS 7 R MOSFET (R) Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP (R) D * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package MAXIMUM RATINGS Symbol S S G S All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage APT8024JLL UNIT 800 Volts 29 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 460 Watts Linear Derating Factor 3.68 W/C PD TJ,TSTG 116 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 29 1 Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 800 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 14.5A) TYP MAX Volts 0.240 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) 500 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) Ohms A 100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 9-2004 Characteristic / Test Conditions 050-7075 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT8024JLL Test Conditions Characteristic MIN TYP C iss Input Capacitance Coss Output Capacitance VDS = 25V 860 Reverse Transfer Capacitance f = 1 MHz 155 VGS = 10V 160 VDD = 400V 24 C rss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) ID = 29A @ 25C tr td(off) tf 5 VDD = 400V RG = 0.6 Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 4 INDUCTIVE SWITCHING @ 25C 6 605 VDD = 533V, VGS = 15V 6 ns 23 ID = 29A @ 25C Turn-off Delay Time nC 9 VGS = 15V Rise Time pF 105 RESISTIVE SWITCHING Turn-on Delay Time UNIT 4670 VGS = 0V 3 MAX ID = 29A, RG = 5 490 INDUCTIVE SWITCHING @ 125C 975 VDD = 533V VGS = 15V J 585 ID = 29A, RG = 5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS MIN Characteristic / Test Conditions TYP 29 Continuous Source Current (Body Diode) 116 ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -29A, dl S/dt = 100A/s) 850 Q rr Reverse Recovery Charge (IS = -29A, dl S/dt = 100A/s) 22 dv/ MAX Peak Diode Recovery dt dv/ (Body Diode) 1.3 (VGS = 0V, IS = -29A) dt UNIT Amps Volts ns C 10 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient TYP 0.27 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25C, L = 5.95mH, RG = 25, Peak IL = 29A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID29A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.20 0.7 0.15 0.5 Note: 0.10 0.3 t1 t2 0.05 0 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7075 Rev B 9-2004 0.3 0.25 0.1 SINGLE PULSE 0.05 10-5 10-4 C/W Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 0.0409 Power (watts) 0.225 0.00361 0.0246F 0.406F 148F ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. (C) Case temperature. (C) 100 60 80 60 40 TJ = +125C TJ = -55C TJ = +25C 0 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 40 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 25 ID, DRAIN CURRENT (AMPERES) 7V 30 6.5V 20 6V 10 5.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 D V 2.0 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 1.2 = 14.5A GS = 10V 1.5 1.0 0.5 0.0 -50 D 1.30 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) I NORMALIZED TO = 10V @ I = 14.5A GS 1.15 30 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 7.5V 50 1.1 1.0 0.9 0.8 9-2004 0 8V 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7075 Rev B ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL VGS =15 &10 V 70 0 20 APT8024JLL 80 10,000 100S 10 1mS 5 = 29A D 12 VDS= 160V VDS= 400V 8 VDS= 640V 4 0 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I Coss 100 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 1,000 10mS TC =+25C TJ =+150C SINGLE PULSE 1 Ciss C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 50 0 APT8024JLL 20,000 114 140 200 100 TJ =+150C TJ =+25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 80 td(off) 120 V DD R 70 G = 533V = 5 T = 125C 100 V DD R G 80 = 533V tr and tf (ns) td(on) and td(off) (ns) J 60 = 5 T = 125C J L = 100H 60 40 50 tf 40 30 tr 20 20 0 L = 100H 10 td(on) 0 10 0 20 30 40 50 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 0 30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 4000 2000 V DD R G V = 533V I 3500 = 5 diode reverse recovery. 1000 Eon 500 Eoff 10 15 20 25 30 35 40 45 50 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT SWITCHING ENERGY (J) SWITCHING ENERGY (J) 9-2004 050-7075 Rev B L = 100H 5 = 533V = 29A J J E ON includes 0 DD D 20 T = 125C T = 125C 1500 10 L = 100H E ON includes 3000 Eoff diode reverse recovery. 2500 2000 Eon 1500 1000 500 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT8024JLL Gate Voltage 10 % 90% Gate Voltage T = 125 C J td(on) td(off) Drain Current 90% T = 125 C J Drain Voltage 90% t f tr 5% 5% 10% Drain Current 10 % Drain Voltage 0 Switching Energy Switching Energy Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 V DD ID V DS G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 9-2004 r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7075 Rev B 7.8 (.307) 8.2 (.322)