SMBT 3904PN
Semiconductor Group Au -27-19971
NPN Silicon Switching Transistor Array
Preliminary data
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN/PNP
Transistors in one package
VPS05604
6
3
1
54
2
PIN Configuration
NPN-Transistor 1 = E 2 = BType 6 = CMarking PackageOrdering Code PNP-Transistor 4 = ESMBT 3904PN s3P SOT-363Q62702-C 5 = B 6 = C
Maximum Ratings
Parameter Symbol UnitValue
Collector-emitter voltage
V
CEO V40
Collector-base voltage
V
CBO 40
Emitter-base voltage
V
EBO 6
DC collector current
I
C200 mA
Total power dissipation,
T
S = 115 °C
P
tot 250 mW
Junction temperature
T
j150 °C
Storage temperature
T
stg - 65...+150
Thermal Resistance
Junction ambient 1)
R
thJA ≤ 275 K/W
Thermal resistance, chip case
R
thJC ≤ 140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm
Semiconductor Group 1 1998-11-01
SMBT 3904PN
Semiconductor Group Au -27-19972
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter ValuesSymbol Unit
typ. max.min.
DC Characteristics per Transistor
V
V
(BR)CEO -40Collector-emitter breakdown voltage
I
C = 1 mA,
I
B = 0 -
Collector-base breakdown voltage
I
C = 10 µA,
I
B = 0 --
V
(BR)CBO 40
Emitter-base breakdown voltage
I
E = 10 µA,
I
C = 0
V
(BR)EBO -6 -
Collector cutoff current
V
CB = 30 V,
I
E = 0 nA50- -
I
CBO
DC current gain 1)
I
C = 100 µA,
V
CE = 1 V
I
C = 1 mA,
V
CE = 1 V
I
C = 10 mA,
V
CE = 1 V
I
C = 50 mA,
V
CE = 1 V
I
C = 100 mA,
V
CE = 1 V
40
70
100
60
30
-
-
300
-
-
-
-
-
-
-
-
h
FE
-
-
0.25
0.4
V
CEsat
-
-
Collector-emitter saturation voltage1)
I
C = 10 mA,
I
B = 1 mA
I
C = 50 mA,
I
B = 5 mA
V
Base-emitter saturation voltage 1)
I
C = 10 mA,
I
B = 1 mA
I
C = 50 mA,
I
B = 5 mA
V
BEsat
0.65
-
-
-
0.85
0.95
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group 2 1998-11-01
SMBT 3904PN
Semiconductor Group Au -27-19973
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics per Transistor
Transition frequency
I
C = 10 mA,
V
CE = 5 V,
f
= 100 MHz
f
T250 - -MHz
Collector-base capacitance
V
CB = 10 V,
f
= 1 MHz
C
cb - - 4.5 pF
Emitter-base capacitance
V
EB = 0.5 V,
f
= 1 MHz
C
eb - - 10
Short-circuit input impedance
I
C = 2 mA,
V
CE = 5 V,
f
= 1 kHz
h
11e 2 - 12 kΩ
Open-circuit reverse voltage transfer ratio
I
C = 2 mA,
V
CE = 5 V,
f
= 1 kHz
h
12e 0.1 - 10 10-4
Short-circuit forward current transfer ratio
I
C = 2 mA,
V
CE = 5 V,
f
= 1 kHz
h
21e 100 - 400 -
Open-circuit output admittance
I
C = 2 mA,
V
CE = 5 V,
f
= 1 kHz
h
22e 1 - 60 µs
Noise figure
I
C = 100 µA,
V
CE = 5 V,
R
S = 1 kΩ,
f
= 1 kHz, ∆ f = 200 Hz
F
5 dB--
Delay time
V
CC = 3 V,
I
C = 10 mA,
I
B1 = 1 mA,
V
BE(off) = 0.5 V
t
d- - 35 ns
Rise time
V
CC = 3 V,
I
C = 10 mA,
I
B1 = 1 mA,
V
BE(off) = 0.5 V
t
r- - 35
Storage time
V
CC = 3 V,
I
C = 10 mA,
I
B1=
I
B2 = 1mA
t
stg - - 225
Fall time
V
CC = 3 V,
I
C = 10 mA,
I
B1=
I
B2 = 1mA
t
f- - 75
Semiconductor Group 3 1998-11-01
SMBT 3904PN
Semiconductor Group Au -27-19974
Total power dissipation
P
tot =
f
(
T
A*;
T
S)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
Kei
n
T
A
T
S
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax /
P
totDC =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 4 1998-11-01
SMBT 3904PN
Semiconductor Group Au -27-19975
DC current gain
h
FE =
f
(
I
C)
V
CE = 10V, normalized
EHP00765
10
10 mA
h
C
5
FE
10
1
0
10
-1
5
10 10 10
-1 0 1 2
Ι
125 C
25 C
-55 C
55 2
Saturation voltage
I
C =
f
(
V
BEsat,
V
CEsat)
h
FE = 10
EHP00756
2
0V
BE sat
C
10
1
10
0
5
Ι
V
mA
0.2 0.4 0.6 0.8 1.0 1.2
CE sat
V
,
5
10
2
V
BE
V
CE
Open-circuit output admittance
h
22e =
f
(
I
C)
V
CE = 10V,
f
= 1MHz
EHP00758
10 mA
h
C
12e
10
-5
5
10 10
-1 0 1
Ι
5
10
-4
10
-3
Short-circuit forward current
transfer ratio
h
21e =
f
(
I
C)
V
CE = 10V,
f
= 1MHz
EHP00759
10
10 mA
h
C
5
21e
10
3
2
10
1
5
10 10
-1 0 1
Ι
5
Semiconductor Group 5 1998-11-01
SMBT 3904PN
Semiconductor Group Au -27-19976
Delay time
t
d =
f
(
I
C)
Rise time
t
r =
f
(
I
C)
EHP00761
10 mA
t
C
r
101
10010 10
01 2
Ι
55
ns
r
t
t
d
,
3
10
d
t
102
103
= 3 V
CC
V
0 V
V
= 2 V
BE
40 V
15 V
h
FE = 10
Storage time
t
stg =
f
(
I
C)
EHP00762
10 mA
t
C
s
10
1
10
0
10 10
01 2
Ι
55
ns
3
10
10
2
10
3
h
FE
= 20
10
25 C
125 C
10
= 20
FE
h
Rise time
t
r =
f
(
I
C)
EHP00764
10 mA
t
C
r
10
1
10
0
10 10
01 2
Ι
55
ns
3
10
10
2
10
3
25 C
125 C
CC
V
= 40 V
= 10
FE
h
Fall time
t
f =
f
(
I
C)
EHP00764
10 mA
t
C
r
101
10010 10
01 2
Ι
55
ns
3
10
102
103
25 C
125 C CC
V
= 40 V
= 10
FE
h
Semiconductor Group 6 1998-11-01
SMBT 3904PN
Semiconductor Group Au -27-19977
Input impedance
h
11e =
f
(
I
C)
V
CE = 10V,
f
= 1kHz
10
EHP00757
-1 1
10mA
-1
10
2
10
5
5
100
100
C
11e
h
Ι
1
10
5
Ω
k
Open-circuit reverse voltage
transfer ratio
h
12e =
f
(
I
C)
V
CE = 10V,
f
= 1kHz
EHP00760
10
10 mA
h
C
5
22e
10
2
1
10
0
5
10 10
-1 0 1
Ι
5
sµ
Semiconductor Group 7 1998-11-01
