PD - 95433 IRF8010SPbF IRF8010LPbF SMPS MOSFET Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free HEXFET(R) Power MOSFET VDSS RDS(on) max ID 15m 80A 100V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Typical RDS(on) = 12m D2Pak IRF8010S TO-262 IRF8010L Absolute Maximum Ratings Parameter Max. Units i ID @ TC = 25C Continuous Drain Current, VGS @ 10V 80 ID @ TC = 100C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM 320 PD @TC = 25C Power Dissipation 260 W 1.8 20 W/C V 16 -55 to + 175 V/ns 57 c VGS Linear Derating Factor Gate-to-Source Voltage dv/dt TJ Peak Diode Recovery dv/dt Operating Junction and TSTG Storage Temperature Range e A C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter RJC Junction-to-Case Junction-to-Case (end of life) RJC RCS Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mount, steady state) j RJA Notes g through www.irf.com Typ. Max. --- 0.57 --- 0.80 0.50 --- --- 40 Units C/W are on page 8 1 06/21/04 IRF8010S/LPbF Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ RDS(on) 100 --- --- Breakdown Voltage Temp. Coefficient --- 0.11 --- Static Drain-to-Source On-Resistance --- 12 15 VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V IDSS Drain-to-Source Leakage Current A IGSS --- --- 20 --- --- 250 Gate-to-Source Forward Leakage --- --- 200 Gate-to-Source Reverse Leakage --- --- -200 V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 45A f VDS = VGS, ID = 250A VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) Parameter gfs Qg Forward Transconductance Qgs Min. Typ. Max. Units V Conditions 82 --- --- VDS = 25V, ID = 45A Total Gate Charge --- 81 120 Gate-to-Source Charge --- 22 --- Qgd Gate-to-Drain ("Miller") Charge --- 26 --- VGS = 10V td(on) Turn-On Delay Time --- 15 --- VDD = 50V tr Rise Time --- 130 --- td(off) Turn-Off Delay Time --- 61 --- tf Fall Time --- 120 --- VGS = 10V Ciss Input Capacitance --- 3830 --- VGS = 0V Coss Output Capacitance --- 480 --- Crss Reverse Transfer Capacitance --- 59 --- Coss Output Capacitance --- 3830 --- VGS = 0V, VDS = 1.0V, = 1.0MHz Coss Output Capacitance --- 280 --- VGS = 0V, VDS = 80V, = 1.0MHz Coss eff. Effective Output Capacitance --- 530 --- VGS = 0V, VDS = 0V to 80V ID = 80A nC VDS = 80V f ID = 80A ns RG = 39 f VDS = 25V pF = 1.0MHz e Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy c di c Typ. Max. Units --- 310 mJ --- 45 A --- 26 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current --- --- 80 ISM (Body Diode) Pulsed Source Current --- --- 320 showing the integral reverse VSD (Body Diode) Diode Forward Voltage --- --- 1.3 V p-n junction diode. TJ = 25C, IS = 80A, VGS = 0V trr Reverse Recovery Time --- 99 150 ns Qrr Reverse RecoveryCharge --- 460 700 nC ton Forward Turn-On Time 2 ci MOSFET symbol A D G S f TJ = 150C, IF = 80A, VDD = 50V di/dt = 100A/s f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF8010S/LPbF 10000 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 12V 10V 6.0V 5.5V 5.0V 4.5V 4.0V 10 4.0V 1 10 4.0V 10 1 0.1 1 BOTTOM 20s PULSE WIDTH Tj = 175C 20s PULSE WIDTH Tj = 25C 0.1 100 0.1 100 1 Fig 1. Typical Output Characteristics 3.5 T J = 25C VDS = 50V 20s PULSE WIDTH 1 6.0 8.0 10.0 12.0 14.0 Fig 3. Typical Transfer Characteristics www.irf.com 16.0 2.5 (Normalized) 100 VGS , Gate-to-Source Voltage (V) I D = 80A 3.0 RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current () T J = 175C 4.0 100 Fig 2. Typical Output Characteristics 1000 2.0 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 10 VGS 15V 12V 10V 6.0V 5.5V 5.0V 4.5V 4.0V 2.0 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 TJ , Junction Temperature 100 120 140 160 180 ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF8010S/LPbF 100000 VGS , Gate-to-Source Voltage (V) Coss = Cds + Cgd 10000 C, Capacitance(pF) 12 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Ciss 1000 Coss 100 Crss ID= 80A VDS= 80V VDS= 50V 10 VDS= 20V 8 6 4 2 0 10 1 10 0 100 60 80 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10000 ID, Drain-to-Source Current (A) 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100 I SD , Reverse Drain Current (A) 40 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100 TJ = 175 C 10 T J= 25 C 1 V GS = 0 V 0.0 0.5 1.0 1.5 V SD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100sec 10 1msec 1 Tc = 25C Tj = 175C Single Pulse 10msec 0.1 0.1 4 20 2.0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF8010S/LPbF LIMITED BY PACKAGE VGS D.U.T. RG 60 I D , Drain Current (A) RD V DS 80 + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 P DM 0.20 0.1 t1 0.10 t2 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC +T C 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF8010S/LPbF 600 15V + V - DD IAS 20V tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) D.U.T RG ID 18A BOTTOM 32A 45A 500 DRIVER L VDS TOP 400 300 200 100 0 25 50 75 100 125 150 175 Starting Tj, Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V 50K 12V .2F .3F QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF8010S/LPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D.U.T + - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRF8010S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMB LED ON WW 02, 2000 IN T HE AS SEMBLY LINE "L" INT ERNAT IONAL RECT IFIER L OGO Note: "P" in ass embly line position indicates "Lead-Free" PART NUMBER F530S AS S EMB LY LOT CODE DAT E CODE YEAR 0 = 2000 WEEK 02 L INE L OR INT E RNAT IONAL RECT IF IER LOGO AS S E MB LY LOT CODE 8 PART NUMBE R F530S DAT E CODE P = DE S IGNAT ES LEAD-FRE E PRODUCT (OPT IONAL) YE AR 0 = 2000 WE EK 02 A = AS S E MB LY S IT E CODE www.irf.com IRF8010S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBL ED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY L OT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE www.irf.com PART NUMBER DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S IT E CODE 9 IRF8010S/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by max. junction Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% temperature. Starting TJ = 25C, L = 0.31mH, RG = 25, IAS = 45A. VDSS. ISD 45A, di/dt 110A/s, VDD V(BR)DSS, TJ 175C. Calculated continuous current based on maximum Pulse width 300s; duty cycle 2%. allowable junction temperature. Package limitation Rth(jc) (end of life) is the maximum measured value current is 75A. after 1000 temperature cycles from -55 to 150C and When mounted on 1" square PCB ( FR-4 or G-10 is accounted for by the physical wearout of the die attach Material ). For recommended footprint and soldering medium in worse case PCB mounting condition of techniques refer to application note #AN-994. material (solder/substrate), process and re-flow temperature. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/04 10 www.irf.com