I 1 I REVERSE BLOCKING TRiODE THYRISTOR . . . multi-purpose trial, PNPN silicon controlled consumer, and muiitarv space-saving, economical @ Uniform Low-Level Forward LOW suited for, indus- Offered packages formounting in a choice of versatility. Noise-1 mmune Gate Triggering IGT = 10 mA (Tvp) e rectifiers applications. @Tc "On" Voltage - = 25C - UT = 1.0 V (Tv P) @ 5,0 Amp @ 25C e High Surge-Current ITSM = 100 . Shorted Capability Amp Emitter - ,>~~ ,,.,. .$+ \$,,. l>t$~{.>, ,1~:,,,*\,:t',* " *$$.* , -~.;t ` *,, Peak Construction m MILLIMETERS MIN MAX DIM A- c . F G J KL- INCHES MIN MAX 11.10 181 1,78 TYP 2.23 2.79 10.72 11.48 16.76 1549 0,070 0.090 0.422 - 0,437 0,310 TYP 0.110 0,452 0660 Q,61O NOTE: I. D[MG'MEA SUREO ATCAN. 2N4167-74 CASE 86~1 NOTES: 1, DIM. G" MEASURED AT CAN. 2, LEAD NO. 3 i7,5 DISPLACEMENT. n 5! ~ ~L" : .-J A t 1 ~+ 10 VGM -40 TJ *Storage Temperature T~ta Range Stud Torque rHERMAL I to volts Oc +100 -40 to +150 Oc 15 in. lb. I I CHARACTERISTICS Characteristic I Symbol Thermal Resistance, Junction to Case R6JC Thermal Resistance, R6CA Case to Ambient (See Fig. 11) 2N4183-98 Max Unit 1,5 2.5* Oclw 50 - I Typ I - /!/ - ; i?"% -N `IFP ~--o$>:<:!''" >~ ~ ,$$$ ` `" "<3*~~'"o `--.~?i,:,,f,, ..+ 0.2 - -- 1.4 VD = Rated VDRM) ,,,$*: = 30 v/Ps) ,*1,,, {<.,%,$::.4 ~,t:,,. ~,.,t ..:*i\, `f: volts mA Us ps ~~i~, :\ ~'.,!* .:;/'$ '$.=, ,1.. ..... .,,,,., `~~1+, Forward Voltage Application' (Gate open, TJ.= 100C, ,,. ..:;> $! *...\.\ ,'r\] f.,~.t:.} * ~:. Rate (Exponential) VD = Rated VDRM} ,, I For optimum "Indicates opera? JEDEC ion, i.e. Registered faster Data turn-on, lower switching losses, ,,** .,.,\++, ,< .):+ s+.. *+. bsti C*`, `$?7 dl/dt capability, Vlps -- recommended 5Q IGT = 200 - mA ,:!$,. .,.~.f:,:,!, ?~).~ ~ ,,*X! $ik.! .,,., ,, qqr~$ ~~ ,& `%$@ ,$k ;' ,.{~.}$, $, IH ..> :,:%*:P ., - ,~..:,. -- ,.$t"'1$0 .q~. 30 **::....>` -- : ,W*.->-" 60 ,.6?,$:;$. >~,>. -- - `*;; "'"*1 .0 `on "..<,%k,,`$::' ,JT ~,.! j+::t:.s,, . .?., ..1+.!. ~.i,il ~~....*\.~ toff ;*>. ., ~;!. ~ `$}:.-- 15 - . .:..,%..::; ..i$~' .,.,!~~ ... JJl -- ~~.$ ,$i,t 25 - Time (td + tr) = 5. OAdc, 10 VTM "(VD = 7,0 Vdc, gate open, TC = -40C) ,(IF ,-- mA = 100C) (pulsed, 1.0 ms max, duty cycle< (VD = 7.0 Vdc, gate open) Turn-Off 2.0 ,_ Holding Current . (IG = 20mAdc, -- 100~) = 15.7 A) Turn-On -- VGT = 7.0 Vdc, RL,= (iT& 2.0 IGT dc) *(VD Voltage -- -40C) = 7.0 Vdc, RL = 100 Q, TC = -40C) "on" -- gate open) *(VD `Forward Unit mA : 100 Q) (Continuous 7.0 Vdc, RL= Wx IRRM @ TJ = 100C, (Continuous 7.0 Vdc, RL= = 7.0 Vdc, RL= (VD'= Typ IDRM Peak Reverse "Blocking Current (VR = Rated VRRM ~i" Symbol Blocking Current minimum. cuRRENT DERATING FIGURE FIGURE 3 - MAXIMUM 4 - MAXIMUM CASE TEMPERATURE AMBIENT TEMPERATURE IT(AV), AVERAGE FORWAROCURRENT(AMP) ~.:$,?., ,:;$' FIGURE 5 - POWER ? + ~ \: DISSIPATION 401 1 1 I 1 1 1 I ! 1 , , , , I 0.1 2 I >0,05 I 50.03 N 1 0.02 0.05 0.1 0.2 0.5 1.0 2,0 I I I I 1111 I I [Ill 5.0 I I 10 20 I I , I , I, [ I 1111 I, II 1111 I , t 1 50 100 m , , I I 1 \ 200 t, TIME (ins) MOTOROLA q semiconductor Products Inc. - 500 1000 2000 3,0 f., .... ," I I I I I I I I I r , [ , ~.: 1 2.0 .. . . `1 =" L c 1 r r[ ,, .. . . . ... , 1.0 `w -. 1 1 .--_' :ESliT~NCE E -- C,,, OF tiL-ATEs ~J&u~E'"$l : - CASE:TO-AMEIENT THERMAL 1 4 RESISTANCE ..; -1 .4? ~ ~ ~'1 I j- `. :m .- ~' 1' ., TYPICAL TERMINAL STRIP OR PRINTED CIRCUIT BOAROMOUNTING , J I "i= LEAD LENGTH -- . Wx ~z~,..'20 I \ Y j+40 :2 1: & "": I `" I I I I I `1 " {,,, S, I O.u ,. :. I -w ,, ,, ,, . ",, 1u.`. - ." 15 :-. . ~!.lo ." `- -0 ,: `- -- "" 100 ~~ - 200 300 . . . . 400. .500