Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.895 V
• Reverse surge capability
• High thermal cycling performance IF(AV) = 8 A
• Low thermal resistance IRRM ≤ 0.2 A
trr ≤ 25 ns
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
intended for use as output rectifiers
in high frequency switched mode 1 cathode
power supplies. 2 anode
The BYW29E series is supplied in
the conventional leaded SOD59 tab cathode
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYW29E -150 -200
VRRM Peak repetitive reverse - 150 200 V
voltage
VRWM Working peak reverse - 150 200 V
voltage
VRContinuous reverse voltage - 150 200 V
IF(AV) Average rectified forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 8 A
current
IFRM Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 16 A
current
IFSM Non-repetitive peak forward t = 10 ms - 80 A
current t = 8.3 ms - 88 A
sinusoidal; with reapplied VRRM(max)
IRRM Peak repetitive reverse tp = 2 µs; δ = 0.001 - 0.2 A
surge current
IRSM Peak non-repetitive reverse tp = 100 µs - 0.2 A
surge current
TjOperating junction - 150 ˚C
temperature
Tstg Storage temperature - 40 150 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCElectrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
k a
12
1
tab
2
November 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction - - 2.7 K/W
to mounting base
Rth j-a Thermal resistance junction in free air - 60 - K/W
to ambient
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFForward voltage IF = 8 A; Tj = 150˚C - 0.8 0.895 V
IF = 8 A - 0.92 1.05 V
IF = 20 A - 1.1 1.3 V
IRReverse current VR = VRWM -210µA
VR = VRWM; Tj = 100˚C - 0.2 0.6 mA
Qrr Reverse recovered charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs-411nC
trr1 Reverse recovery time IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs2025ns
trr2 Reverse recovery time IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 15 20 ns
Vfr Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
November 1998 2 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Qs100%
10%
time
dI
dtF
IR
IF
Irrm
trr
I = 1A
R
rec
I = 0.25A
0A
trr2
0.5A
IF
IR
time
time
VF
Vfr
VF
IF
024681012
0
2
4
6
8
10
12 D = 1.0
0.5
0.2
0.1
BYW29
IF(AV) / A
PF / W
D =
t
p
t
p
T
T
t
I
Tmb(max) / C
150
143
136
129
122
115
108
Vo = 0.791 V
Rs = 0.013 Ohms
shunt
Current
to ’scope
D.U.T.
Voltage Pulse Source
R
012345678
0
1
2
3
4
5
6
7
8a = 1.57
1.9
2.2
2.8
4
BYW29
IF(AV) / A
PF / W Tmb(max) / C
150
146.5
143
139.5
136
132.5
129
125.5
122
Vo = 0.791 V
Rs = 0.013 Ohms
November 1998 3 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
Fig.7. Maximum t
rr
at T
j
= 25 ˚C.
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C.
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 ˚C.
Fig.11. Transient thermal impedance; Z
th j-mb
= f(t
p
).
1
10
trr / ns
1 10 100
1000
100
dIF/dt (A/us)
IF=1A
IF=10A
10
1.01.0 10 100
-dIF/dt (A/us)
Qs / nC
IF=10A
5A
2A
1A
100
10
1
0.1
0.01
Irrm / A
110 100
-dIF/dt (A/us)
IF=1A
IF=10A
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.001
0.01
0.1
1
10
PBYL1025
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
0 1 2
30
20
10
0
typ max
IF / A
0.5 1.5
VF / V
Tj=150 C
Tj=25 C
BYW29
November 1998 4 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.12. TO220AC; pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
0,9 max (2x)
13,5
min
5,08
12
November 1998 5 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1998 6 Rev 1.300
