1
SEMICONDUCTORS
SUMMARY
BVCEO = -60V : RSAT = 32m ; IC= -4.3A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 60V PNP transistor
offers low on state losses making it ideal for use in DC-DC circuits, line
switching and various driving and power management functions.
FEATURES
Extremely low equivalent on-resistance; RSAT = 32mV at 5A
4.3 amps continuous current
Up to 15 amps peak current
Very low saturation voltages
Excellent gain characteristics specified up to 10 amps
APPLICATIONS
Emergency lighting circuits
Motor driving (including DC fans)
Solenoid, relay and actuator drivers
DC-DC modules
Backlight inverters
Power switches
MOSFET gate drivers
DEVICE MARKING
951
ZXTP2012Z
ISSUE 1 - JUNE 2005
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
DEVICE REEL
SIZE TAPE
WIDTH QUANTITY PER
REEL
ZXTP2012ZTA 7 12mm
embossed 1,000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
SOT89
ZXTP2012Z
SEMICONDUCTORS
ISSUE 1 - JUNE 2005
2
PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) RJA 83 °C/W
Junction to ambient (b) RJA 60 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BVCBO -100 V
Collector-emitter voltage BVCEO -60 V
Emitter-base voltage BVEBO -7 V
Continuous collector current (a) IC-4.3 A
Peak pulse current ICM -15 A
Power dissipation at TA=25°C (a)
Linear derating factor PD1.5
12 W
mW/°C
Power dissipation at TA=25°C (b)
Linear derating factor PD2.1
16.8 W
mW/°C
Operating and storage temperature range Tj,T
stg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
ZXTP2012Z
SEMICONDUCTORS
ISSUE 1 - JUNE 2005
3
CHARACTERISTICS
ZXTP2012Z
SEMICONDUCTORS
ISSUE 1 - JUNE 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BVCBO -100 -120 V IC=-100A
Collector-emitter breakdown voltage BVCER -100 -120 V IC=-1A, RB1k
Collector-emitter breakdown voltage BVCEO -60 -80 V IC=-10mA*
Emitter-base breakdown voltage BVEBO -7 -8.1 V IE=-100A
Collector cut-off current ICBO 1 -20
-0.5 nA
AVCB=-80V
VCB=-80V,Tamb=100C
Collector cut-off current ICER
R1k
1 -20
-0.5 nA
AVCB=-80V
VCB=-80V,Tamb=100C
Emitter cut-off current IEBO 1 -10 nA VEB=-6V
Collector-emitter saturation voltage VCE(SAT) -14
-50
-75
-160
-20
-65
-110
-215
mV
mV
mV
mV
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-5A, IB=-500mA*
Base-emitter saturation voltage VBE(SAT) -950 -1050 mV IC=-5A, IB=-500mA*
Base-emitter turn-on voltage VBE(ON) -840 -950 mV IC=-5A, VCE=-1V*
Static forward current transfer ratio HFE 100
100
45
10
250
200
90
25
300 IC=-10mA, VCE=-1V*
IC=-2A, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
Transition frequency fT120 MHz IC=-100mA, VCE=-10V
f=50MHz
Output capacitance COBO 48 pF VCB=-10V, f=1MHz*
Switching times tON
tOFF
39
370 ns IC=-1A, VCC=-10V,
IB1=IB2=-100mA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
ZXTP2012Z
SEMICONDUCTORS
ISSUE 1 - JUNE 2005
5
TYPICAL CHARACTERISTICS
ZXTP2012Z
SEMICONDUCTORS
6
ISSUE 1 - JUNE 2005
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PAD LAYOUT DETAILS
DIM Millimeters Inches DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059
b 0.38 0.48 0.015 0.019 E 3.75 4.25 0.150 0.167
b1 - 0.53 - 0.021 E1 - 2.60 - 0.102
b2 1.50 1.80 0.060 0.071 G 2.90 3.00 0.114 0.118
c 0.28 0.44 0.011 0.017 H 2.60 2.85 0.102 0.112
D 4.40 4.60 0.173 0.181 - ----
PACKAGE DIMENSIONS