DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC115EE NPN resistor-equipped transistor; R1 = 100 k, R2 = 100 k Product specification 2002 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 100 k, R2 = 100 k PDTC115EE FEATURES QUICK REFERENCE DATA * Built-in bias resistors R1 and R2 (typically 100 k each) SYMBOL * Simplification of circuit design VCEO collector-emitter voltage 50 V IO output current (DC) 20 mA R1 bias resistor 100 k R2 bias resistor 100 k * Reduces number of components and required PCB area. PARAMETER MAX. UNIT APPLICATIONS * Especially suitable for space reduction in interface and driver circuits PINNING PIN * Inverter circuit configuration without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a SOT416 (SC-75) plastic package. DESCRIPTION 1 base/input 2 emitter/ground 3 collector/output handbook, halfpage 3 3 R1 1 MARKING R2 TYPE NUMBER PDTC115EE MARKING CODE 1 46 2 2 Top view MAM346 Fig.1 Simplified outline (SOT416) and symbol. 1 3 2 MGA893 - 1 Fig.2 Equivalent inverter symbol. 2002 May 08 2 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 100 k, R2 = 100 k PDTC115EE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V Vi input voltage positive - +40 V negative - -10 V IO output current (DC) - 20 mA ICM peak collector current - 100 mA Ptot total power dissipation - 150 mW Tamb 25 C; note 1 Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Note 1. Refer to standard SOT416 (SC-75) mounting conditions. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE UNIT 833 K/W Note 1. Refer to standard SOT416 (SC-75) mounting conditions. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = 50 V; IE = 0 - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 - - 1 A VCE = 30 V; IB = 0; Tj = 150 C - - 50 A IEBO emitter-base cut-off current VEB = 5 V; IC = 0 - - 50 A hFE DC current gain VCE = 5 V; IC = 5 mA 80 - - VCEsat collector-emitter saturation voltage IC = 300 mA; IB = 10 mA - - 150 mV Vi(off) input off voltage VCE = 5 V; IC = 100 A - - 0.5 V Vi(on) input on voltage VCE = 0.3 V; IC = 1 mA 3 - - V R1 input resistor 70 100 130 k R2 -------R1 resistor ratio 0.8 1 1.2 Cc collector capacitance - - 2.5 2002 May 08 IE = ie = 0; VCB = 10 V; f = 1 MHz 3 pF Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 100 k, R2 = 100 k PDTC115EE PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 2002 May 08 REFERENCES IEC JEDEC EIAJ SC-75 4 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 100 k, R2 = 100 k PDTC115EE DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 May 08 5 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 100 k, R2 = 100 k PDTC115EE NOTES 2002 May 08 6 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 100 k, R2 = 100 k PDTC115EE NOTES 2002 May 08 7 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA74 (c) Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2002 May 08 Document order number: 9397 750 09662