LESHAN RADIO COMPANY, LTD.
MBV109. MMBV109*. MV209*–1/2
1
3
2
Designed for general frequency control and tuning applications;
providing solid–state reliability in replacement of mechanical tuning
methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
Silicon Epicap Diode
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating Symbol Value Unit
MBV109T1 MMBV109LT1 MV209
Reverse Voltage V R30 Vdc
Forward Current I F200 mAdc
Device Dissipation P D
@T A = 25°C 280 200 200 mW
Derate above 25°C 2.8 2.0 1.6 mW/°C
Junction Temperature T J+125 °C
Storage Temperature Range T stg –55 to +150 °C
DEVICE MARKING
MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage V (BR)R 30 — — Vdc
( I R = 10 µAdc)
Reverse Voltage Leakage Current I R— — 0.1 mAdc
( V R = 25Vdc)
Diode Capacitance Temperature Coefficient TC C— 300 — ppm/°C
(V R = 3.0 Vdc, f = 1.0 MHz)
Device Type Min Nom Max Min Min Max
MBV109T1, MMBV109LT1, MV209
26 29 32 200 5.0 6.5
1. C R is the ratio of C t measured at 3 V dc divided by C t measured at 25 Vdc.
MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.
C T Diode Capacitance
VR =3.0Vdc, f =1.0MHz
p F
Q, Figure of
Merit
V R = 3.0Vdc
f = 50MHz
CR, Capacitance
Ratio
C3 / C 25
f=1.0MHz (Note 1)
MMBV109LT1
MBV109T1
MV209
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
26–32 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
LESHAN RADIO COMPANY, LTD.
MBV109. MMBV109*. MV209*–2/2
MBV109T1 MMBV109LT1 MV209
C T , CAPACITANCE (pF)
Q , FIGURE OF MERIT
1000
100
10
10 100 1000
40
36
32
28
24
20
16
12
8
4
0
1 3 10 30 100
f , FREQUENCY ( MHz )
Figure 2. Figure of Merit
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
–75 –50 –25 0 +25 +50 +75 +100 +125
T A , AMBIENT TEMPERATURE (
°C
)
Figure 4. Diode Capacitance
C
T
, DIODE CAPACITANCE (NORMALIZED)
100
20
10
2.0
1.0
0.2
0.1
0.02
0.01
0.002
0.001
–60 –40 –20 0 20 40 60 80 100 120 140
T A , AMBIENT TEMPERATURE (
°C
)
Figure 3 . Leakage Current
I
R
, REVERSE CURRENT (nA)
NOTES ON TESTING AND SPECIFICATIONS
1. C R is the ratio of C t measured at 3.0 Vdc divided by C t measured at 25 Vdc.
