A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 10 mA 25 V
BVCBO IC = 5.0 mA 60 V
BVEBO IE = 1.0 mA 5.0 V
ICBO VCB = 30 V 500 µA
IEBO VEB = 4.0 V 500 µA
hFE VCE = 12 V IC = 10 mA 10 50 180 ---
PO
ηC VCC = 12 V PIN = 0.5 W f = 27 MHz 13
60 16
70
dB
%
NPN SILICON RF POWER TRANSISTOR
2SC3133
DESCRIPTION:
The ASI 2SC3133 is Designed for RF
Power amplifiers in HF band mobile radio
Applications.
MAXIMUM RATINGS
IC 6.0 A
VCE 25 V
VCB 60 V
PDISS 20 W @ TC = 25 °C
TSTG -65 °C to +150 °C
θJC 6.25 °C/W
PACKAGE STYLE TO-220AB (COMMON EMITTER)
1 = BASE 2 = EMITTER
3 = COLLECTOR TAB = EMITTER
