MGA-71543
Low Noise Ampli er with Mitigated Bypass Switch
Data Sheet
Description
Avago’s MGA-71543 is an economical, easy-to-use GaAs
MMIC Low Noise Ampli er (LNA), which is designed for
adaptive CDMA and W-CDMA receiver systems. The MGA-
71543 is part of the Avago Technologies complete CD-
MAdvantage RF chipset.
The MGA-71543 features a minimum noise  gure of 0.8 dB
and 16 dB available gain from a single stage, feedback FET
ampli er. The input and output are partially matched, and
only a simple series/shunt inductor match is required to
achieve low noise  gure and VSWR into 50Ω.
When set into the bypass mode, both input and output
are internally matched through a mitigative circuit. This
circuit draws no current, yet duplicates the in and out im-
pedance of the LNA. This allows the system user to have
minimum mismatch change from LNA to bypass mode,
which is very important when the MGA-71543 is used be-
tween duplexers and/or  lters.
The MGA-71543 o ers an integrated solution of LNA with
adjustable IIP3. The IIP3 can be  xed to a desired current
level for the receiver’s linearity requirements.
The LNA has a bypass switch function, which provides low
insertion loss at zero current. The bypass mode also boosts
dynamic range when high level signal is being received.
The MGA-71543 is designed for CDMA and W-CDMA re-
ceiver systems. The IP3, Gain, and mitigative network are
tailored to these applications where  lters are used. Many
CDMA systems operate 20% LNA mode, 80% bypass. With
the bypass current draw of zero and LNA of 10 mA, the
MGA-71543 allows an average 2 mA current.
The MGA-71543 is a GaAs MMIC, processed on Avago’s
cost e ective PHEMT (Pseudomorphic High Electron Mo-
bility Transistor Technology). It is housed in the SOT343
(SC70 4-lead) package.
Attention:
Observe precautions for handling
electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Features
Lead-free Option Available
Operating frequency: 0.1 GHz ~ 6.0 GHz
Noise gure: 0.8 dB (NFmin)
Gain: 16 dB
Average Idd = 2mA in CDMA handset
Bypass switch on chip Loss = -5.6 dB (Id < 5 μA) IIP3 =
+35 dBm
Adjustable input IP3: 0 to +9 dBm
2.7 V to 4.2V operation
Applications
CDMA (IS-95, J-STD-008) Receiver LNA
Transmit Driver Amp
W-CDMA Receiver LNA
TDMA (IS-136) handsets
Surface Mount Package SOT-343/4-lead SC70
Pin Connections and Package Marking
71x
RF Gnd
& V
s
INPUT
& V
ref
OUTPUT
& V
d
RF Gnd
& V
s
3
4
1
2
2
Functional Block Diagram Simplified Schematic
MGA-71543 Absolute Maximum Ratings[1]
Symbol Parameter Units Absolute Operation
Maximum Maximum
VdMaximum Input to Output Voltage[4] V 5.5 4.2
VcMaximum Input to Ground DC Voltage[4] V +.3 +.1
-5.5 -4.2
IdSupply Current mA 60 50
PdPower Dissipation[2] mW 240 200
Pin CW RF Input Power dBm +15 +10
TjJunction Temperature °C 170 150
TSTG Storage Temperature °C -65 to +150 -40 to +85
Thermal Resistance:[2, 3]
θjc = 240°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Ground lead temperature at 25°C.
3. Thermal resistance measured by 150°C Liquid
Crystal Measurement method.
4. Maximum rating assumes other parameters
are at DC quiescent conditions.
Product Consistency Distribution Charts [5,6]
Notes:
5. Distribution data sample size is 450 samples
taken from 9 different wafers. Future wafers
allocated to this product may have nominal
values anywhere within the upper and lower
specification limits.
6. Measurements made on production test
board, Figure 4. This circuit represents a
trade-off between an optimal noise match
and a realizable match based on production
test requirements at 10 mA bias current.
RF OUT
Switch & Bias
RF IN
RF Gnd RF Gnd
& Vs
Output
& V
d
Control
++
––
Gain FET
Input
& V
ref
GAIN (dB)
FREQUENCY
Figure 1. Gain @ 2 GHz, 3V, 10 mA.
LSL = 14.4, Nominal = 15.9, USL = 17.4
14.4 15.4 16.4 17.4
150
120
90
60
30
0
+3 Std
Cpk = 2.00
Std = 0.24
-3 Std
IIP3 (dBm)
FREQUENCY
Figure 2. IIP3 @ 2 GHz, 3V, 10 mA.
LSL = 1.0, Nominal = 3.0, USL = 8.0
134 52678
150
120
90
60
30
0
+3 Std
Cpk = 1.16
Std = 0.96
-3 Std
NF (dB)
FREQUENCY
Figure 3. NF @ 2 GHz, 3V, 10 mA.
LSL = 0.85, Nominal = 1.08, USL = 1.45
0.85 1.05 1.15 1.250.95 1.35 1.45
150
120
90
60
30
0
+3 Std
Cpk = 2.33
Std = 0.02
-3 Std
Excess circuit losses have been de-embedded
from actual measurements. Performance may
be optimized for different bias conditions and
applications. Consult Application Note for
details.
Input
R
bias
V
d
control
1.5 nH
2.7 nH
Output
71
Evaluation Test Circuit
(single positive bias)
3
MGA-71543 Electrical Specifications
Tc = +25°C, Zo = 50Ω, Id = 10 mA, Vd = 3V, unless noted
Symbol Parameter and Test Condition Units Min. Typ. Max. σ [1]
Vref test Vds = 2.4 V Id = 10 mA V -0.86 -0.65 -0.43 0.041
NF test f = 2.01 GHz Vd = 3.0 V (= Vds - Vref) Id = 10 mA dB 1.1 1.45 0.02
Gain test f = 2.01 GHz Vd = 3.0 V (= Vds - Vref) Id = 10 mA dB 14.4 15.9 17.4 0.24
IIP3 test f = 2.01 GHz Vd = 3.0 V (= Vds - Vref) Id = 10 mA dBm 1 3.0 0.96
Gain, Bypass f = 2.01 GHz Vds = 0 V, Vref = -3 V Id = 0 mA dB -6.4 -5.6 0.12
Bypass Mode[6]
Ig test Bypass Mode Vds = 0 V, Vref = -3 V[6] Id = 0 mA μA 2.0 1.5
NFmin[3] Minimum Noise Figure f = 0.9 GHz dB 0.7
As measured in Figure 5 Test Circuit f = 1.5 GHz 0.7
(Γopt computed from s-parameter and f = 1.9 GHz 0.8
noise parameter performance as measured f = 2.1 GHz 0.8
in a 50Ω impedance fixture) f = 2.5 GHz 0.8
f = 6.0 GHz 1.1
Ga[3] Associated Gain at Nfo f = 0.9 GHz dB 17.1
As measured in Figure 5 Test Circuit f = 1.5 GHz 16.4
(Gopt computed from s-parameter and f = 1.9 GHz 15.8
noise parameter performance as measured f = 2.1 GHz 15.4
in a 50Ω impedance fixture) f = 2.5 GHz 14.9
f = 6.0 GHz 10.0
P1dB Output Power at 1 dB Gain Compression Id = 6 mA dBm +3.0
As measured in Evaluation Test Circuit with Id = 10 mA +7.4
source resistor biasing[4,5] Id = 20 mA +13.1
Frequency = 2.01 GHz Id = 40 mA +15.5
IIP3 Input Third Order Intercept Point Id = 6 mA dBm -0.5
As measured in Figure 4 Test Circuit[5] Id = 10 mA +3.0
Frequencies = 2.01 GHz, 2.02 GHz Id = 20 mA +7.4
Id = 40 mA +8.7
Switch Bypass Switch Rise/Fall Time
(10% - 90%) Intrinsic 10
As measured in Evaluation Test Circuit Eval Circuit nS 100
RLin Input Return Loss as measured in Fig. 4 f = 2.01 GHz dB 6.0 0.31
RLout Output Return Loss as measured in Fig. 4 f = 2.01 GHz dB 10.9 0.65
ISOL Isolation |s12|2 as measured in Fig. 5 f = 2.01 GHz dB -22.5
Notes:
1. Standard Deviation and Typical Data based at least 450 part sample size from 9 wafers. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
2. Measurements made on a fixed tuned production test circuit (Figure 4) that represents a trade-off between optimal noise match, maximum gain match,
and a realizable match based on production test board requirements at 10 mA bias current. Excess circuit losses have been de-embedded from actual
measurements. Vd=Vds-Vref where Vds is adjusted to maintain a constant Vd bias equivalent to a single supply 3V bias application. Consult Applica-
tions Note for circuit biasing options.
3. Minimum Noise Figure and Associated Gain data computed from s-parameter and noise parameter data measured in a 50Ω system using ATN NP5 test
system. Data based on 10 typical parts from 9 wafers. Associated Gain is the gain when the product input is matched for minimum Noise Figure.
4. P1dB measurements were performed in the evaluation circuit with source resistance biasing. As P1dB is approached, the drain current is maintained
near the quiescent value by the feedback effect of the source resistor in the evaluation circuit. Consult Applications Note for circuit biasing options.
5. Measurements made on a fixed tuned production test circuit that represents a trade-off between optimal noise match, maximum gain match, and a
realizable match based on production test board requirements at 10 mA bias current. Performance may be optimized for different bias conditions and
applications. Consult Applications Note.
6. The Bypass Mode test conditions are required only for the production test circuit (Figure 4) using the gate bias method. In the preferred source resistor
bias configuration, the Bypass Mode is engaged by presenting a DC open circuit instead of the bias resistor on Pin 4.
44
MGA-71543 Typical Performance
Tc = 25°C, Zo = 50, Vd = 3V, Id = 10 mA unless stated otherwise. Data vs. frequency was measured in Figure 5 test system
and was optimized for each frequency with external tuners.
Figure 4. MGA-71543 Production Test Circuit. Figure 5. MGA-71543 Test Circuit for S, Noise, and
Power Parameters over Frequency.
RF
Input
V
ref
56 pF
960 pF
1.5 nH
2.7 nH 3.9 nH
V
ds
RF
Output
71
2
1
4
3
56 pF
56 pF
RF
Input
Bias Tee
Vds
RF
Output
71
Vref
Bias
Tee
Test Fixture
2.7V
3.0V
3.3V
FREQUENCY (GHz)
Figure 6. Minimum Noise Figure vs.
Frequency and Voltage.
NOISE FIGURE (dB)
1.5
1.3
1.1
0.9
0.7
0.5
0621453
2.7V
3.0V
3.3V
FREQUENCY (GHz)
Figure 7. Associated Gain with Fmin vs.
Frequency and Voltage.
ASSOCIATED GAIN (dB)
20
17
14
11
8
5
0621453
FREQUENCY (GHz)
Figure 8. Input Third Order Intercept Point vs.
Frequency and Voltage.
INPUT IP3 (dBm)
18
15
12
9
6
3
0
-3
0621453
2.7V
3.0V
3.3V
FREQUENCY (GHz)
Figure 9. Associated Gain with Fmin vs.
Frequency.
ASSOCIATED GAIN (dB)
20
17
14
11
8
5
0621453
-40°C
+25°C
+85°C
FREQUENCY (GHz) 500 MHz to 6 GHz
Figure 10. Input Third Order Intercept Point
vs. Frequency and Temperature.
INPUT IP3 (dBm)
18
15
12
9
6
3
0
-3
0621453
-40°C
+25°C
+85°C
Figure 11. S11 Impedance vs. Frequency.
(m1 = Sw, m2 = 6 mA, m3 = 10 mA)
m1
m2
m3
Figure 12. S22 Impedance vs. Frequency.
(m1 = Sw, m2 = 6 mA, m3 = 10 mA)
m2 m1
m3
G
ass
w/Fmin
Minimum
FREQUENCY (GHz)
Figure 13. Bypass Mode Associated
Insertion Loss with Fmin Match and
Minimum Loss vs. Frequency.
INSERTION LOSS (dB)
0
-2
-4
-6
-8
-10
06214530621453
2.7V
3.0V
3.3V
FREQUENCY (GHz)
Figure 14. Output Power at 1 dB Compression
vs. Frequency and Voltage.[4]
OP1dB (dBm)
18
15
12
9
6
3
0
-3
500 MHz to 6 GHz
4
5
MGA-71543 Typical Performance, continued
Tc = 25°C, Zo = 50, Vd = 3V, Id = 10 mA unless stated otherwise. Data vs. frequency was measured in Figure 5 test system
and was optimized for each frequency with external tuners.
FREQUENCY (GHz)
Figure 15. Input Third Order Intercept Point
vs. Frequency and Current.
INPUT IP3 (dBm)
18
15
12
9
6
3
0
-3
0621453
6 mA
10 mA
20 mA
I
dsq
CURRENT (mA)
Figure 16. Output Power at 1 dB Compression
vs. Idsq Current and Temperature (Passive
Bias, Vref Fixed)[4].
OP1dB (dBm)
18
15
12
9
-6
3
0
-3
040
10 3020
-40°C
+25°C
+85°C
I
d
CURRENT (mA)
Figure 17. Output Power at 1 dB Compression
vs. Current and Temperature (Source Resistor
Bias in Evaluation Circuit)[5].
OP1dB (dBm)
18
15
12
9
6
3
0
-3
040
10 3020
-40°C
+25°C
+85°C
I
d
CURRENT (mA)
Figure 18. Minimum Noise Figure vs. Current
(2 GHz).
NF (dB)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
040
10 3020
I
d
CURRENT (mA)
Figure 19. Gain vs. Current and Temperature
(2 GHz).
GAIN (dB)
040
10 3020
-40°C
+25°C
+85°C
20
17
14
11
8
5
2
I
d
CURRENT (mA)
Figure 20. Input Third Intercept Point vs.
Current and Temperature (2 GHz).
INPUT IP3 (dBm)
040
10 3020
-40°C
+25°C
+85°C
12
9
6
3
0
-3
I
d
CURRENT (mA)
Figure 21. Control Voltage vs. Current.
Vs (V)
040
10 3020
1.0
0.8
0.6
0.4
0.2
0
Notes:
4. P1dB measurements were performed with
passive biasing in Production Test Circuit
(Figure 4.). Quiescent drain current, Idsq, is
set by a fixed Vref with no RF drive applied.
As P1dB is approached, the drain current may
increase or decrease depending on frequency
and DC bias point which typically results in
higher P1dB than if the drain current is
maintained constant by active biasing.
5. P1dB measurements were performed in
Evaluation Test Circuit with source resistor
biasing which maintains the drain current
near the quiescent value under large signal
conditions.
6
MGA-71543 Typical Scattering Parameters
TC = 25°C, Vds = 0V, Vref = -3.0V, Id = 0 mA (bypass mode), ZO = 50Ω
Freq S11 S11 S21 S21 S12 S12 S22 S22 S21 Gmax RLin RLout Isolation
(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (dB) (dB) (dB) (dB) (dB)
0.1 0.968 -4.5 0.021 41.1 0.021 41.3 0.936 -5.9 -33.6 -12.5 -0.3 -0.6 -33.6
0.2 0.961 -8.4 0.039 70.5 0.039 70.8 0.916 -9.5 -28.2 -9.1 -0.3 -0.8 -28.2
0.3 0.951 -11.4 0.065 73.7 0.064 73.9 0.901 -13.1 -23.7 -6.3 -0.4 -0.9 -23.9
0.4 0.947 -14.8 0.09 70.9 0.09 71 0.89 -16.5 -20.9 -4.2 -0.5 -1.0 -20.9
0.5 0.937 -18.1 0.114 65.7 0.114 65.9 0.871 -20.2 -18.9 -3.6 -0.6 -1.2 -18.9
0.6 0.929 -21.3 0.136 61.4 0.136 61.5 0.861 -23.7 -17.3 -2.8 -0.6 -1.3 -17.3
0.7 0.921 -24.5 0.157 57 0.157 57.1 0.846 -27.1 -16.1 -2.4 -0.7 -1.5 -16.1
0.8 0.913 -27.7 0.176 52.7 0.176 52.8 0.833 -30.3 -15.1 -2.2 -0.8 -1.6 -15.1
0.9 0.905 -30.8 0.194 48.6 0.194 48.7 0.82 -33.3 -14.2 -2.0 -0.9 -1.7 -14.2
1 0.895 -33.7 0.211 44.5 0.211 44.6 0.806 -36.3 -13.5 -1.9 -1.0 -1.9 -13.5
1.1 0.887 -36.6 0.226 40.6 0.226 40.6 0.791 -39.2 -12.9 -1.9 -1.0 -2.0 -12.9
1.2 0.878 -39.4 0.239 36.8 0.239 36.9 0.776 -41.9 -12.4 -2.0 -1.1 -2.2 -12.4
1.3 0.869 -42.1 0.252 33.2 0.252 33.3 0.762 -44.4 -12.0 -2.1 -1.2 -2.4 -12.0
1.4 0.862 -44.7 0.264 29.7 0.263 29.8 0.748 -46.9 -11.6 -2.1 -1.3 -2.5 -11.6
1.5 0.854 -47.3 0.274 26.3 0.274 26.4 0.732 -49.2 -11.2 -2.2 -1.4 -2.7 -11.2
1.6 0.847 -49.8 0.283 23.1 0.283 23.2 0.719 -51.4 -11.0 -2.3 -1.4 -2.9 -11.0
1.7 0.839 -52.4 0.293 19.9 0.292 20 0.705 -53.5 -10.7 -2.4 -1.5 -3.0 -10.7
1.8 0.832 -54.8 0.3 16.8 0.3 16.9 0.692 -55.5 -10.5 -2.5 -1.6 -3.2 -10.5
1.9 0.825 -57.1 0.308 13.8 0.307 14 0.679 -57.6 -10.2 -2.6 -1.7 -3.4 -10.3
2 0.819 -59.5 0.314 11 0.314 11.1 0.665 -59.4 -10.1 -2.7 -1.7 -3.5 -10.1
2.1 0.812 -61.7 0.321 8.1 0.32 8.2 0.653 -61.2 -9.9 -2.8 -1.8 -3.7 -9.9
2.2 0.806 -63.9 0.326 5.3 0.326 5.4 0.639 -63 -9.7 -2.9 -1.9 -3.9 -9.7
2.3 0.8 -66.3 0.331 2.6 0.331 2.7 0.627 -64.6 -9.6 -3.0 -1.9 -4.1 -9.6
2.4 0.792 -68.5 0.336 0 0.336 0.1 0.616 -66.3 -9.5 -3.1 -2.0 -4.2 -9.5
2.5 0.787 -70.9 0.341 -2.7 0.34 -2.5 0.603 -67.8 -9.3 -3.2 -2.1 -4.4 -9.4
3 0.76 -81.8 0.359 -15.1 0.358 -15 0.548 -75.5 -8.9 -3.6 -2.4 -5.2 -8.9
3.5 0.74 -93.4 0.371 -27.1 0.37 -27 0.497 -83.4 -8.6 -3.9 -2.6 -6.1 -8.6
4 0.721 -106 0.377 -39.1 0.377 -39 0.452 -91.6 -8.5 -4.3 -2.8 -6.9 -8.5
4.5 0.708 -119.8 0.379 -51 0.378 -50.9 0.418 -100.7 -8.4 -4.6 -3.0 -7.6 -8.5
5 0.7 -134.7 0.374 -63.2 0.374 -63 0.393 -110.7 -8.5 -4.9 -3.1 -8.1 -8.5
5.5 0.7 -150.2 0.362 -75.2 0.362 -75.1 0.376 -121.1 -8.8 -5.2 -3.1 -8.5 -8.8
6 0.699 -165.1 0.347 -86.7 0.347 -86.5 0.361 -130.9 -9.2 -5.7 -3.1 -8.8 -9.2
6.5 0.705 179.7 0.328 -98.1 0.328 -98 0.35 -141.7 -9.7 -6.1 -3.0 -9.1 -9.7
7 0.708 165.3 0.307 -109.4 0.307 -109.4 0.336 -152 -10.3 -6.7 -3.0 -9.5 -10.3
8 0.705 136.3 0.262 -133.2 0.262 -133.1 0.292 -173.9 -11.6 -8.3 -3.0 -10.7 -11.6
9 0.728 106.4 0.202 -157.3 0.201 -157.2 0.242 156.3 -13.9 -10.4 -2.8 -12.3 -13.9
10 0.781 75 0.141 179.6 0.141 179.8 0.247 114.9 -17.0 -12.7 -2.1 -12.1 -17.0
11 0.815 48.9 0.083 156.7 0.083 156.8 0.306 80.3 -21.6 -16.5 -1.8 -10.3 -21.6
12 0.838 28.2 0.034 134.9 0.034 135.6 0.367 54.2 -29.4 -23.5 -1.5 -8.7 -29.4
13 0.847 8.5 0.005 -22.1 0.005 -19.9 0.414 29.4 -46.0 -39.7 -1.4 -7.7 -46.0
14 0.85 -10.6 0.037 -73.5 0.036 -73.5 0.478 4.7 -28.6 -21.9 -1.4 -6.4 -28.9
15 0.856 -28.5 0.058 -94 0.057 -94.1 0.555 -15.7 -24.7 -17.4 -1.4 -5.1 -24.9
16 0.848 -43.4 0.072 -112.3 0.072 -112.2 0.626 -30.1 -22.9 -15.2 -1.4 -4.1 -22.9
17 0.844 -53.9 0.083 -127.4 0.083 -127.3 0.669 -44 -21.6 -13.6 -1.5 -3.5 -21.6
18 0.873 -65.2 0.088 -145.2 0.088 -144.4 0.706 -58.7 -21.1 -11.9 -1.2 -3.0 -21.1
7
MGA-71543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vds = 2.25V, Vref = -0.77 V, Id = 3 mA, ZO = 50Ω
Freq S11 S11 S21 S21 S12 S12 S22 S22 S21 Gmax RLin RLout Isolation
(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (dB) (dB) (dB) (dB) (dB)
0.3 0.927 -10.1 2.945 170.7 0.028 23.9 0.754 -7.9 9.4 21.6 -0.7 -2.5 -31.1
0.5 0.921 -16.4 2.939 164.1 0.032 32.9 0.744 -12.6 9.4 21.1 -0.7 -2.6 -29.9
0.7 0.915 -22.7 2.907 158.3 0.039 38.7 0.742 -17.5 9.3 20.6 -0.8 -2.6 -28.2
0.9 0.909 -28.8 2.871 152.6 0.047 41.3 0.74 -22.1 9.2 20.2 -0.8 -2.6 -26.6
1.1 0.899 -34.8 2.826 147 0.054 41.5 0.736 -26.7 9.0 19.6 -0.9 -2.7 -25.4
1.3 0.891 -40.5 2.783 141.5 0.062 40.5 0.732 -30.9 8.9 19.1 -1.0 -2.7 -24.2
1.5 0.883 -46.2 2.728 136.3 0.069 38.8 0.727 -34.9 8.7 18.6 -1.1 -2.8 -23.2
1.7 0.873 -51.7 2.693 131.1 0.076 36.7 0.721 -38.7 8.6 18.0 -1.2 -2.8 -22.4
1.9 0.863 -57 2.652 126.1 0.082 34.3 0.716 -42.5 8.5 17.5 -1.3 -2.9 -21.7
2 0.858 -59.7 2.63 123.7 0.086 33 0.711 -44.2 8.4 17.2 -1.3 -3.0 -21.3
2.1 0.852 -62.3 2.609 121.2 0.089 31.7 0.707 -46 8.3 17.0 -1.4 -3.0 -21.0
2.2 0.846 -64.8 2.593 118.7 0.092 30.4 0.703 -47.9 8.3 16.7 -1.5 -3.1 -20.7
2.3 0.841 -67.5 2.579 116.3 0.095 28.9 0.698 -49.5 8.2 16.5 -1.5 -3.1 -20.4
2.4 0.833 -70 2.554 113.9 0.098 27.5 0.695 -51.3 8.1 16.2 -1.6 -3.2 -20.2
2.5 0.828 -72.8 2.544 111.5 0.1 26.1 0.689 -52.9 8.1 15.9 -1.6 -3.2 -20.0
3 0.794 -85.6 2.479 99.7 0.114 18.5 0.66 -61.6 7.9 14.7 -2.0 -3.6 -18.9
3.5 0.758 -99.1 2.43 87.7 0.125 10.7 0.626 -70.5 7.7 13.6 -2.4 -4.1 -18.1
4 0.717 -113.5 2.373 75.6 0.134 2.1 0.587 -80 7.5 12.5 -2.9 -4.6 -17.5
4.5 0.679 -129 2.323 63.1 0.141 -6.4 0.549 -90.3 7.3 11.6 -3.4 -5.2 -17.0
5 0.644 -145.1 2.252 50.5 0.144 -15.4 0.511 -100.9 7.1 10.7 -3.8 -5.8 -16.8
6 0.594 -176.1 2.073 26.9 0.143 -31 0.454 -120.8 6.3 9.2 -4.5 -6.9 -16.9
7 0.565 155 1.885 4.6 0.138 -45.3 0.408 -140.1 5.5 8.0 -5.0 -7.8 -17.2
8 0.536 127 1.715 -16.6 0.126 -58.8 0.344 -157.3 4.7 6.7 -5.4 -9.3 -18.0
9 0.545 99.4 1.611 -37 0.117 -63.7 0.281 -177.8 4.1 6.0 -5.3 -11.0 -18.6
10 0.608 70.4 1.503 -59.7 0.12 -71.8 0.254 145.5 3.5 5.8 -4.3 -11.9 -18.4
11 0.665 46.2 1.332 -82 0.12 -81.5 0.274 106.1 2.5 5.4 -3.5 -11.2 -18.4
12 0.707 27.2 1.167 -101.9 0.119 -90 0.317 75.4 1.3 4.8 -3.0 -10.0 -18.5
13 0.735 8.7 1.03 -121.7 0.12 -99.8 0.356 47.9 0.3 4.2 -2.7 -9.0 -18.4
14 0.76 -9.7 0.904 -142.2 0.122 -110.9 0.421 20.1 -0.9 3.7 -2.4 -7.5 -18.3
15 0.788 -27.4 0.757 -162.1 0.118 -122.8 0.511 -4.1 -2.4 3.1 -2.1 -5.8 -18.6
16 0.802 -42.4 0.609 180 0.115 -134.2 0.6 -21.1 -4.3 2.1 -1.9 -4.4 -18.8
17 0.808 -53.1 0.5 165.7 0.113 -144.3 0.653 -36.7 -6.0 1.0 -1.9 -3.7 -18.9
18 0.845 -64.7 0.429 150.7 0.11 -157.8 0.699 -52.6 -7.4 1.0 -1.5 -3.1 -19.2
Freq Fmin GAMMA OPT Rn/50 Ga
(GHz) (dB) Mag Ang (dB)
0.7 0.88 0.61 16.3 0.45 14.8
0.9 0.87 0.64 22.4 0.43 14.8
1.1 0.9 0.65 28.4 0.44 14.7
1.3 0.92 0.6 33.5 0.43 14.2
1.5 0.95 0.64 37.2 0.42 14.2
1.7 0.95 0.63 40.2 0.41 14
1.9 0.99 0.62 45.4 0.4 13.7
2 1 0.62 47.6 0.4 13.6
2.1 1.02 0.61 49.2 0.4 13.4
2.2 1.03 0.63 50.9 0.39 13.4
2.3 1.03 0.62 53.9 0.38 13.2
2.4 1.04 0.6 55.4 0.37 12.9
2.5 1.04 0.61 57.6 0.37 12.9
3 1.08 0.58 67.9 0.33 12.1
5 1.21 0.49 120 0.14 9.6
6 1.36 0.46 151.2 0.08 8.4
8
MGA-71543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vds = 2.3 V, Vref = -0.7 V, Id = 6 mA, ZO = 50Ω
Freq S11 S11 S21 S21 S12 S12 S22 S22 S21 Gmax RLin RLout Isolation
(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (dB) (dB) (dB) (dB) (dB)
0.3 0.911 -11 4.164 170.2 0.026 23.5 0.667 -8.4 12.4 22.6 -0.8 -3.5 -31.7
0.5 0.904 -17.7 4.148 163.3 0.03 32.6 0.658 -13.4 12.4 22.2 -0.9 -3.6 -30.5
0.7 0.896 -24.5 4.094 157.1 0.036 38.5 0.656 -18.5 12.2 21.7 -1.0 -3.7 -28.9
0.9 0.887 -31.2 4.029 151.1 0.043 41 0.654 -23.5 12.1 21.2 -1.0 -3.7 -27.3
1.1 0.875 -37.5 3.953 145.2 0.05 41.3 0.648 -28.2 11.9 20.6 -1.2 -3.8 -26.0
1.3 0.864 -43.7 3.877 139.5 0.057 40.4 0.643 -32.6 11.8 20.0 -1.3 -3.8 -24.9
1.5 0.853 -49.7 3.791 134 0.063 38.8 0.638 -36.8 11.6 19.5 -1.4 -3.9 -24.0
1.7 0.84 -55.6 3.723 128.7 0.069 36.7 0.631 -40.7 11.4 18.9 -1.5 -4.0 -23.2
1.9 0.826 -61.2 3.649 123.4 0.075 34.5 0.624 -44.6 11.2 18.4 -1.7 -4.1 -22.5
2 0.82 -64 3.611 121 0.078 33.3 0.619 -46.4 11.2 18.1 -1.7 -4.2 -22.2
2.1 0.812 -66.7 3.576 118.4 0.081 32.1 0.615 -48.2 11.1 17.8 -1.8 -4.2 -21.8
2.2 0.806 -69.4 3.55 115.7 0.084 30.7 0.609 -50.1 11.0 17.6 -1.9 -4.3 -21.5
2.3 0.797 -72.3 3.511 113.3 0.086 29.4 0.604 -51.7 10.9 17.3 -2.0 -4.4 -21.3
2.4 0.787 -74.9 3.474 110.9 0.089 28.1 0.6 -53.5 10.8 16.9 -2.1 -4.4 -21.0
2.5 0.78 -77.8 3.446 108.3 0.091 26.7 0.593 -55.1 10.7 16.7 -2.2 -4.5 -20.8
3 0.738 -91.2 3.309 96.3 0.102 19.7 0.561 -63.7 10.4 15.5 -2.6 -5.0 -19.8
3.5 0.695 -105.2 3.193 84.2 0.112 12.6 0.523 -72.6 10.1 14.3 -3.2 -5.6 -19.0
4 0.649 -120.2 3.072 72.2 0.119 4.9 0.482 -82 9.7 13.3 -3.8 -6.3 -18.5
4.5 0.609 -136.2 2.962 59.9 0.125 -2.6 0.443 -92.3 9.4 12.4 -4.3 -7.1 -18.1
5 0.573 -152.7 2.83 47.8 0.128 -10.4 0.406 -103 9.0 11.5 -4.8 -7.8 -17.9
6 0.529 175.9 2.555 25 0.13 -23.6 0.352 -123 8.1 10.1 -5.5 -9.1 -17.7
7 0.507 147.2 2.295 3.6 0.129 -36 0.308 -142.4 7.2 8.9 -5.9 -10.2 -17.8
8 0.485 119.4 2.072 -16.8 0.123 -47.7 0.247 -159.2 6.3 7.8 -6.3 -12.1 -18.2
9 0.502 92.5 1.922 -36.5 0.123 -52.7 0.189 178.9 5.7 7.1 -6.0 -14.5 -18.2
10 0.574 65 1.78 -58.3 0.132 -63.1 0.174 132.2 5.0 6.9 -4.8 -15.2 -17.6
11 0.639 42.1 1.576 -79.6 0.134 -75 0.218 88.5 4.0 6.4 -3.9 -13.2 -17.5
12 0.686 23.9 1.388 -98.8 0.136 -85.8 0.272 59.8 2.8 5.9 -3.3 -11.3 -17.3
13 0.715 5.8 1.236 -118.1 0.137 -97.7 0.318 34.5 1.8 5.4 -2.9 -10.0 -17.3
14 0.741 -12 1.094 -138.4 0.137 -110.5 0.388 9.3 0.8 4.9 -2.6 -8.2 -17.3
15 0.774 -29.2 0.926 -158 0.131 -123.3 0.482 -11.4 -0.7 4.4 -2.2 -6.3 -17.7
16 0.789 -43.9 0.761 -175.8 0.125 -135.2 0.57 -26.3 -2.4 3.6 -2.1 -4.9 -18.1
17 0.797 -54.3 0.634 169.4 0.121 -145.5 0.622 -40.6 -4.0 2.5 -2.0 -4.1 -18.3
18 0.833 -65.8 0.549 153.8 0.117 -159 0.67 -55.4 -5.2 2.5 -1.6 -3.5 -18.6
Freq Fmin GAMMA OPT Rn/50 Ga
(GHz) (dB) Mag Ang (dB)
0.7 0.71 0.56 15.7 0.32 16.3
0.9 0.74 0.58 21.8 0.3 16.3
1.1 0.76 0.56 28.3 0.31 15.9
1.3 0.79 0.54 33.8 0.3 15.6
1.5 0.81 0.58 36.5 0.29 15.6
1.7 0.8 0.57 40 0.29 15.3
1.9 0.82 0.57 45.2 0.28 15.1
2 0.83 0.56 47.8 0.28 14.9
2.1 0.85 0.55 49.3 0.28 14.7
2.2 0.85 0.58 50.7 0.27 14.8
2.3 0.87 0.56 53.9 0.26 14.5
2.4 0.87 0.54 55.3 0.26 14.3
2.5 0.88 0.55 57.7 0.26 14.2
3 0.9 0.53 67.7 0.23 13.5
5 1.03 0.42 120.7 0.11 10.7
6 1.14 0.38 152.7 0.07 9.4
9
MGA-71543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vds = 2.4 V, Vref = -0.6 V, Id = 10 mA, ZO = 50Ω
Freq S11 S11 S21 S21 S12 S12 S22 S22 S21 Gmax RLin RLout Isolation
(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (dB) (dB) (dB) (dB) (dB)
0.3 0.9 -11.5 5.023 169.8 0.024 23.3 0.608 -8.7 14.0 23.2 -0.9 -4.3 -32.4
0.5 0.892 -18.6 4.993 162.7 0.029 32.4 0.599 -13.8 14.0 22.8 -1.0 -4.5 -30.8
0.7 0.884 -25.7 4.919 156.3 0.034 38.3 0.597 -19.1 13.8 22.4 -1.1 -4.5 -29.4
0.9 0.873 -32.7 4.83 150 0.041 40.9 0.595 -24.2 13.7 21.8 -1.2 -4.5 -27.7
1.1 0.859 -39.4 4.728 143.9 0.047 41.3 0.589 -29.1 13.5 21.2 -1.3 -4.6 -26.6
1.3 0.845 -45.8 4.623 138 0.053 40.5 0.584 -33.6 13.3 20.5 -1.5 -4.7 -25.5
1.5 0.832 -52 4.509 132.4 0.059 39.1 0.578 -37.8 13.1 20.0 -1.6 -4.8 -24.6
1.7 0.816 -58.1 4.412 126.9 0.065 37.2 0.571 -41.8 12.9 19.4 -1.8 -4.9 -23.7
1.9 0.801 -63.9 4.312 121.5 0.07 35 0.563 -45.7 12.7 18.8 -1.9 -5.0 -23.1
2 0.793 -66.8 4.259 119 0.073 33.9 0.558 -47.4 12.6 18.5 -2.0 -5.1 -22.7
2.1 0.784 -69.6 4.211 116.4 0.075 32.7 0.553 -49.2 12.5 18.2 -2.1 -5.1 -22.5
2.2 0.776 -72.4 4.171 113.7 0.078 31.6 0.549 -51 12.4 18.0 -2.2 -5.2 -22.2
2.3 0.767 -75.3 4.117 111.2 0.08 30.3 0.543 -52.7 12.3 17.7 -2.3 -5.3 -21.9
2.4 0.757 -78 4.07 108.7 0.083 29 0.538 -54.5 12.2 17.4 -2.4 -5.4 -21.6
2.5 0.749 -80.9 4.029 106.2 0.085 27.7 0.531 -56 12.1 17.1 -2.5 -5.5 -21.4
3 0.701 -94.7 3.829 94 0.095 21.2 0.499 -64.4 11.7 15.8 -3.1 -6.0 -20.4
3.5 0.655 -108.9 3.659 81.9 0.103 14.7 0.461 -73.1 11.3 14.7 -3.7 -6.7 -19.7
4 0.607 -124.2 3.49 70 0.11 7.6 0.42 -82.2 10.9 13.7 -4.3 -7.5 -19.2
4.5 0.567 -140.4 3.335 58 0.116 0.8 0.382 -92.6 10.5 12.8 -4.9 -8.4 -18.7
5 0.533 -157.2 3.163 46.1 0.12 -6.3 0.346 -103.3 10.0 12.0 -5.5 -9.2 -18.4
6 0.493 171.3 2.828 23.9 0.124 -18.3 0.296 -123.4 9.0 10.6 -6.1 -10.6 -18.1
7 0.476 142.7 2.526 2.9 0.126 -30.1 0.255 -143.1 8.0 9.5 -6.4 -11.9 -18.0
8 0.458 115.1 2.271 -17 0.124 -41.4 0.195 -159.7 7.1 8.3 -6.8 -14.2 -18.1
9 0.48 88.8 2.094 -36.3 0.128 -47.3 0.141 176.8 6.4 7.6 -6.4 -17.0 -17.9
10 0.558 62.2 1.935 -57.6 0.139 -58.9 0.14 120.6 5.7 7.4 -5.1 -17.1 -17.1
11 0.627 39.9 1.712 -78.3 0.142 -71.7 0.2 76.5 4.7 7.0 -4.1 -14.0 -17.0
12 0.675 22.1 1.512 -97.2 0.145 -83.5 0.26 50.1 3.6 6.5 -3.4 -11.7 -16.8
13 0.706 4.4 1.351 -116.2 0.145 -96.3 0.308 26.4 2.6 6.0 -3.0 -10.2 -16.8
14 0.732 -13.3 1.2 -136.2 0.145 -109.7 0.379 3.1 1.6 5.6 -2.7 -8.4 -16.8
15 0.767 -30.2 1.022 -155.6 0.137 -123.1 0.473 -15.8 0.2 5.1 -2.3 -6.5 -17.3
16 0.783 -44.7 0.849 -173.3 0.131 -135.2 0.558 -29.5 -1.4 4.3 -2.1 -5.1 -17.7
17 0.792 -55.1 0.713 171.8 0.126 -145.7 0.609 -43 -2.9 3.4 -2.0 -4.3 -18.0
18 0.828 -66.5 0.622 156 0.122 -159.2 0.656 -57.3 -4.1 3.3 -1.6 -3.7 -18.3
Freq Fmin GAMMA OPT Rn/50 Ga
(GHz) (dB) Mag Ang (dB)
0.7 0.63 0.53 15.3 0.27 17.2
0.9 0.66 0.54 21.4 0.26 17.1
1.1 0.68 0.55 28.5 0.26 16.9
1.3 0.7 0.52 33.8 0.25 16.5
1.5 0.72 0.55 37 0.25 16.4
1.7 0.72 0.56 39.9 0.25 16.2
1.9 0.73 0.53 45.5 0.24 15.8
2 0.74 0.53 48.3 0.23 15.6
2.1 0.76 0.52 49.6 0.23 15.4
2.2 0.78 0.54 50.7 0.23 15.4
2.3 0.78 0.53 54 0.22 15.2
2.4 0.79 0.51 55.6 0.22 15
2.5 0.8 0.52 57.6 0.22 14.9
3 0.82 0.5 67.5 0.2 14.2
5 0.94 0.38 121.3 0.1 11.2
6 1.05 0.34 155 0.07 10
10
MGA-71543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vds = 2.5 V, Vref = -0.5 V, Id = 20 mA, ZO = 50Ω
Freq S11 S11 S21 S21 S12 S12 S22 S22 S21 Gmax RLin RLout Isolation
(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (dB) (dB) (dB) (dB) (dB)
0.3 0.889 -12.1 5.952 169.3 0.023 22.8 0.541 -9 15.5 23.8 -1.0 -5.3 -32.8
0.5 0.88 -19.5 5.901 162 0.027 32 0.532 -14.1 15.4 23.3 -1.1 -5.5 -31.4
0.7 0.87 -27 5.803 155.3 0.032 38.2 0.531 -19.6 15.3 22.9 -1.2 -5.5 -29.9
0.9 0.858 -34.3 5.684 148.8 0.037 40.9 0.528 -24.7 15.1 22.3 -1.3 -5.5 -28.6
1.1 0.842 -41.2 5.548 142.5 0.043 41.5 0.523 -29.7 14.9 21.6 -1.5 -5.6 -27.3
1.3 0.826 -47.9 5.407 136.5 0.049 40.9 0.518 -34.2 14.7 21.0 -1.7 -5.7 -26.2
1.5 0.81 -54.3 5.26 130.6 0.055 39.6 0.511 -38.4 14.4 20.4 -1.8 -5.8 -25.2
1.7 0.792 -60.7 5.126 125 0.06 38 0.505 -42.4 14.2 19.8 -2.0 -5.9 -24.4
1.9 0.774 -66.6 4.99 119.5 0.065 36.1 0.497 -46.2 14.0 19.2 -2.2 -6.1 -23.7
2 0.765 -69.6 4.922 116.9 0.067 35 0.493 -47.9 13.8 18.9 -2.3 -6.1 -23.5
2.1 0.755 -72.5 4.857 114.3 0.069 34 0.488 -49.6 13.7 18.6 -2.4 -6.2 -23.2
2.2 0.746 -75.4 4.797 111.5 0.072 32.9 0.483 -51.5 13.6 18.3 -2.5 -6.3 -22.9
2.3 0.736 -78.3 4.729 109 0.074 31.8 0.477 -53 13.5 18.0 -2.7 -6.4 -22.6
2.4 0.724 -81 4.668 106.5 0.076 30.6 0.473 -54.7 13.4 17.7 -2.8 -6.5 -22.4
2.5 0.716 -84 4.612 103.9 0.078 29.4 0.467 -56.2 13.3 17.5 -2.9 -6.6 -22.2
3 0.664 -98 4.34 91.7 0.087 23.6 0.435 -64.1 12.7 16.2 -3.6 -7.2 -21.2
3.5 0.616 -112.4 4.107 79.7 0.095 17.8 0.399 -72.4 12.3 15.1 -4.2 -8.0 -20.4
4 0.566 -128 3.886 67.9 0.102 11.3 0.36 -81.1 11.8 14.1 -4.9 -8.9 -19.8
4.5 0.528 -144.5 3.686 56.1 0.108 5.1 0.324 -91.4 11.3 13.2 -5.5 -9.8 -19.3
5 0.495 -161.5 3.473 44.5 0.113 -1.3 0.291 -102.1 10.8 12.4 -6.1 -10.7 -18.9
6 0.46 166.9 3.078 22.8 0.119 -12.5 0.245 -122.3 9.8 11.1 -6.7 -12.2 -18.5
7 0.448 138.5 2.737 2.4 0.124 -24.1 0.208 -142.5 8.7 9.9 -7.0 -13.6 -18.1
8 0.436 111.1 2.452 -17.1 0.125 -35.3 0.15 -158.6 7.8 8.8 -7.2 -16.5 -18.1
9 0.462 85.4 2.252 -36 0.133 -42.2 0.099 175.9 7.1 8.1 -6.7 -20.1 -17.5
10 0.544 59.7 2.075 -56.8 0.146 -54.9 0.114 106.8 6.3 7.9 -5.3 -18.9 -16.7
11 0.617 38.1 1.836 -77.2 0.15 -68.5 0.191 65.3 5.3 7.5 -4.2 -14.4 -16.5
12 0.668 20.6 1.626 -95.6 0.153 -81 0.256 41.5 4.2 7.1 -3.5 -11.8 -16.3
13 0.7 3.1 1.457 -114.4 0.153 -94.4 0.305 19.4 3.3 6.6 -3.1 -10.3 -16.3
14 0.728 -14.4 1.299 -134.1 0.153 -108.4 0.377 -2.4 2.3 6.2 -2.8 -8.5 -16.3
15 0.763 -31.2 1.111 -153.3 0.144 -122.2 0.469 -19.6 0.9 5.8 -2.3 -6.6 -16.8
16 0.78 -45.5 0.93 -170.8 0.137 -134.6 0.552 -32.5 -0.6 5.0 -2.2 -5.2 -17.3
17 0.789 -55.8 0.788 174.2 0.132 -145.3 0.599 -45.4 -2.1 4.1 -2.1 -4.5 -17.6
18 0.825 -67.1 0.691 158.3 0.126 -159 0.645 -59 -3.2 4.1 -1.7 -3.8 -18.0
Freq Fmin GAMMA OPT Rn/50 Ga
(GHz) (dB) Mag Ang (dB)
0.7 0.59 0.52 15.7 0.25 18.1
0.9 0.64 0.53 21.7 0.24 17.9
1.1 0.66 0.53 28.9 0.24 17.7
1.3 0.68 0.51 34.2 0.23 17.3
1.5 0.68 0.54 38.5 0.23 17.2
1.7 0.69 0.54 40.8 0.23 17
1.9 0.72 0.51 46.4 0.22 16.5
2 0.73 0.51 48.8 0.22 16.4
2.1 0.74 0.5 50.5 0.21 16.2
2.2 0.75 0.51 52.4 0.21 16.1
2.3 0.76 0.51 55.4 0.2 15.9
2.4 0.77 0.48 56.3 0.2 15.6
2.5 0.79 0.5 59 0.2 15.6
3 0.82 0.47 68.6 0.18 14.7
5 0.93 0.34 125.1 0.09 11.7
6 1.06 0.31 160.6 0.07 10.5
11
MGA-71543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vds = 2.7 V, Vref = -0.3 V, Id = 40 mA, ZO = 50Ω
Freq S11 S11 S21 S21 S12 S12 S22 S22 S21 Gmax RLin RLout Isolation
(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (dB) (dB) (dB) (dB) (dB)
0.3 0.889 -12.3 6.174 169.2 0.022 22.3 0.508 -8.9 15.8 23.9 -1.0 -5.9 -33.2
0.5 0.88 -19.8 6.117 161.8 0.025 31.6 0.501 -13.7 15.7 23.5 -1.1 -6.0 -32.0
0.7 0.87 -27.4 6.012 155.1 0.029 37.9 0.499 -19.1 15.6 23.0 -1.2 -6.0 -30.8
0.9 0.857 -34.9 5.885 148.5 0.035 40.9 0.497 -24.2 15.4 22.4 -1.3 -6.1 -29.1
1.1 0.841 -41.9 5.74 142.1 0.04 41.7 0.493 -29 15.2 21.7 -1.5 -6.1 -28.0
1.3 0.823 -48.7 5.589 136 0.046 41.4 0.488 -33.4 14.9 21.0 -1.7 -6.2 -26.7
1.5 0.807 -55.2 5.435 130.2 0.051 40.2 0.483 -37.5 14.7 20.4 -1.9 -6.3 -25.8
1.7 0.788 -61.6 5.289 124.5 0.055 38.7 0.477 -41.3 14.5 19.8 -2.1 -6.4 -25.2
1.9 0.769 -67.6 5.145 119 0.06 37 0.47 -45 14.2 19.2 -2.3 -6.6 -24.4
2 0.76 -70.6 5.072 116.3 0.062 36.1 0.466 -46.5 14.1 18.9 -2.4 -6.6 -24.2
2.1 0.75 -73.5 5.003 113.7 0.064 35.1 0.462 -48.2 14.0 18.6 -2.5 -6.7 -23.9
2.2 0.739 -76.3 4.93 111 0.066 34.2 0.458 -50 13.9 18.3 -2.6 -6.8 -23.6
2.3 0.73 -79.4 4.865 108.4 0.068 33.1 0.452 -51.4 13.7 18.0 -2.7 -6.9 -23.3
2.4 0.718 -82.2 4.801 105.9 0.07 32 0.448 -53 13.6 17.7 -2.9 -7.0 -23.1
2.5 0.709 -85.2 4.739 103.3 0.072 30.9 0.442 -54.5 13.5 17.5 -3.0 -7.1 -22.9
3 0.656 -99.3 4.447 91 0.081 25.5 0.413 -61.9 13.0 16.2 -3.7 -7.7 -21.8
3.5 0.608 -113.8 4.197 79 0.089 20 0.38 -69.7 12.5 15.1 -4.3 -8.4 -21.0
4 0.559 -129.5 3.963 67.3 0.095 14 0.344 -77.9 12.0 14.1 -5.1 -9.3 -20.4
4.5 0.521 -146 3.751 55.6 0.101 8.2 0.31 -87.7 11.5 13.3 -5.7 -10.2 -19.9
5 0.49 -163 3.53 44.1 0.106 2 0.278 -98 11.0 12.5 -6.2 -11.1 -19.5
6 0.457 165.4 3.124 22.5 0.114 -8.6 0.236 -117.5 9.9 11.2 -6.8 -12.5 -18.9
7 0.447 137.1 2.776 2.2 0.12 -19.8 0.201 -137.1 8.9 10.0 -7.0 -13.9 -18.4
8 0.436 109.8 2.484 -17.2 0.122 -30.9 0.146 -151.4 7.9 8.9 -7.2 -16.7 -18.3
9 0.462 84.5 2.28 -36 0.132 -37.8 0.096 -173.8 7.2 8.2 -6.7 -20.4 -17.6
10 0.546 59.1 2.102 -56.7 0.146 -50.8 0.101 112 6.5 8.0 -5.3 -19.9 -16.7
11 0.621 37.8 1.861 -77 0.152 -64.7 0.177 66.8 5.4 7.6 -4.1 -15.0 -16.4
12 0.672 20.3 1.649 -95.4 0.155 -77.6 0.244 42.3 4.3 7.2 -3.5 -12.3 -16.2
13 0.705 2.9 1.478 -114.1 0.157 -91.3 0.293 19.8 3.4 6.8 -3.0 -10.7 -16.1
14 0.733 -14.6 1.32 -133.9 0.157 -105.8 0.366 -2.2 2.4 6.4 -2.7 -8.7 -16.1
15 0.768 -31.3 1.129 -153.1 0.149 -119.7 0.461 -19.1 1.1 6.0 -2.3 -6.7 -16.5
16 0.786 -45.7 0.946 -170.6 0.141 -132.5 0.545 -32.1 -0.5 5.2 -2.1 -5.3 -17.0
17 0.794 -56.1 0.801 174.5 0.136 -143.6 0.595 -45.1 -1.9 4.3 -2.0 -4.5 -17.3
18 0.83 -67.4 0.703 158.5 0.131 -157.4 0.641 -58.8 -3.1 4.3 -1.6 -3.9 -17.7
Freq Fmin GAMMA OPT Rn/50 Ga
(GHz) (dB) Mag Ang (dB)
0.7 0.69 0.56 17.3 0.32 18.5
0.9 0.73 0.57 23.9 0.3 18.3
1.1 0.73 0.56 30.8 0.31 18
1.3 0.77 0.54 36.5 0.3 17.6
1.5 0.77 0.58 40.7 0.29 17.6
1.7 0.8 0.57 43.9 0.29 17.3
1.9 0.83 0.55 49.7 0.28 16.9
2 0.85 0.54 52.1 0.27 16.7
2.1 0.86 0.54 54.3 0.27 16.5
2.2 0.9 0.54 55.5 0.26 16.4
2.3 0.91 0.54 59.3 0.26 16.2
2.4 0.91 0.52 61 0.25 16
2.5 0.93 0.52 63.2 0.25 15.8
3 0.98 0.49 74.7 0.22 15
5 1.19 0.37 136 0.1 11.9
6 1.35 0.35 172.8 0.08 10.7
12
Part Number Ordering Information
No. of
Part Number Devices Container
MGA-71543-TR1 3000 7" Reel
MGA-71543-TR2 10000 13" Reel
MGA-71543-BLK 100 antistatic bag
MGA-71543-TR1G 3000 7" Reel
MGA-71543-TR2G 10000 13" Reel
MGA-71543-BLKG 100 antistatic bag
Note: For lead-free option, the part number will have the
character “G” at the end.
Package Dimensions Outline 43
SOT-343 (SC70 4-lead)
Recommended PCB Pad Layout for
Avago’s SC70 4L/SOT-343 Products
HE
D
A2
A1
b
b1
E
1.30 (.051)
BSC
1.15 (.045) BSC
C
L
A
DIMENSIONS (mm)
MIN.
1.15
1.85
1.80
0.80
0.80
0.00
0.15
0.55
0.10
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.70
0.20
0.46
SYMBOL
E
D
HE
A
A2
A1
b
b1
c
L
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold ash & metal burr.
4. All specications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror nish.
1.30
(0.051)
0.60
(0.024)
0.9
(0.035)
Dimensions in mm
(inches)
1.15
(0.045)
2.00
(0.079)
1.00
(0.039)
13
Device Orientation
Tape Dimensions For Outline 4T
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
71x 71x71x
71x
PPoP2
F
W
C
D1
D
E
Ao
10 MAX.
t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)
10 MAX.
Bo
Ko
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
Ao
Bo
Ko
P
D1
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
Po
E
1.55 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.061 + 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254 0.02
0.315 + 0.012
0.0100 ± 0.0008
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
Tt
5.40 ± 0.10
0.062 ± 0.001
0.205 + 0.004
0.0025 ± 0.0004
COVER TAPE
14
Designing with MGA-71543,
a Low Noise Amplifier with
Built-in Mitigated Bypass
Switches
Introduction
The MGA-71543 is a single stage
GaAs RFIC low noise amplifier
with an integrated bypass switch
(Figure 1).
RF OUT
Switch & Bias
RF IN
Figure 1. MGA-71543 Functional Diagram.
This application note describes a
low noise amplifier design using
Avago Technologies’ MGA-71543.
The MGA-71543 is designed for
receivers and transmitters operat-
ing from 100 MHz to 6 GHz, mainly
for CDMA applications i.e. IS-95
CDMA1900, CDMA800 and
W-CDMA. It can be used as a first
stage (Q1) in a CDMA PCS
1900 MHz application currently
filled by a single transistor. Its
bypass capability adds features
over the single transistor solution
with no performance loss. The
device can also be used as a driver
amplifier for CDMA800.
The purpose of the switch feature
is to prevent distortion of high
signal levels in receiver applica-
tions by bypassing the amplifier.
Furthermore, zero current draw,
when in bypass mode, saves
current thus improving battery
life.
The internally matched switching
circuit provides a 20 dB gain step
and also reduces gain ripple and
mismatch in system usage.
The MGA-71543 is a small LNA/
Bypass Switch MMIC that pro-
vides a low noise figure, a high
gain and high third order input
intercept point (IIP3) ideal for the
first stage LNA of PCS CDMA and
W-CDMA.
Device Description
The MGA-71543 is a single stage
GaAs IC with a built-in bypass
switch housed in a SOT-343
package. The device diagram is
shown in Figures 1 and 2.
RF out
Amplifier Mode
Bypass Mode
RF in
Figure 2. Simplified Schematic.
GND GND
& Vc
Output
& V
d
Control
++
––
Gain FET
Input
&
DC
ref
Figure 3. Bypass State Duplicates the In and
Out Impedance.
The MGA-71543 features a mini-
mum noise figure of 0.8 dB and
16 dB available gain. The input
and output are partially matched,
and only a simple series/shunt
inductor match is required to
achieve low noise figure and
VSWR into 50Ω.
When set into the bypass mode,
both input and output are inter-
nally matched through a mitigative
circuit. This circuit draws no
current (less than 2 μA), yet
duplicates the in and out imped-
ance of the LNA (Figure 3). This
allows the system user to have
minimum mismatch change from
LNA to Bypass mode, thus allow-
ing the same matching network at
both states (LNA State and Bypass
State). This makes the MGA-71543
ideal for use between duplexers
and image reject filters.
The MGA-71543 offers an inte-
grated solution of LNA with
adjustable IIP3. The IIP3 can be
fixed to a desired current level for
the receiver’s linearity require-
ments. The LNA has a bypass
switch function, which sets the
current to zero (2 μA) and pro-
vides low insertion loss when in
bypass mode. The bypass mode
also boosts dynamic range when
high level signal is being received.
Many CDMA systems operate
20% LNA and 80% bypass mode.
For example, with the bypass
draw of zero and LNA of 10 mA,
the MGA-71543 allows an average
of only 2 mA current.
The MGA-71543 is a GaAs MMIC,
processed on Avago’s cost effec-
tive PHEMT (Pseudomorphic High
Electron Mobility Transistor
Technology). It is housed in the
SOT343 (SC70 4-lead) package.
Biasing
This IC can be biased like a
depletion mode discrete GaAsFET.
Two kinds of passive biasing can
be used: gate bias (Figure 4) and
source resistor bias method
(Figure 6).
Gate Bias
Pins 1 and 4 (Figure 4) are DC
grounded and a negative bias
voltage is applied to Pin 3 in
addition to the power supply (2.7
or 3V) applied to Pin 2. This
method of biasing has the advan-
tage of minimizing parasitic
source inductance because the
device is directly DC and RF
grounded.
15
V
ref
Output
& Vd
Input
71
2
1
4
3
Figure 4. Gate Bias Method.
The DC supply at the input
terminal (Vref) can be applied
through a RF choke (inductor).
The voltage at Vref (Pin 3) with
respect to ground determines the
device current, Id. A plot of typical
Id vs. Vref is shown in Figure 5.
Maximum device current
(approximately 60 mA) occurs at
Vref = 0 (i.e. Vgs= 0).
When using the gate biasing
method, the bypass mode is
activated when Vds = 0V and
Vref < -2V.
V
ref
(V)
I
d
(mA)
-1
70
60
50
40
30
20
10
0-0.6-0.8 -0.4 -0.2
Figure 5. Device Current vs. Vref.
This kind of biasing would not
usually be used unless a negative
supply voltage was readily
available.
Source Resistor Bias
This is the recommended method
because it only requires one
(positive) power supply. As shown
in Figure 6, Pin 3 is DC grounded
and pins 1 and 4 are RF bypassed.
The current of the amplifier (Id) is
set by the value of the resistor
Rbias. This resistor (Rbias) is
connected at Pin 4 as shown in
Figure 6 and RF bypassed. At least
two capacitors in parallel are
recommended for RF bypassing.
One capacitor (100 pF) for high
frequency bypassing and a second,
large value capacitor for better
low frequency bypassing. The
large value capacitor is added in
parallel to improve the IP3
because they help ground the low
frequency mixing terms that are
generated during a two tones test
(i.e. f1 – f2 term which is the
separation of the two tones
usually 1 to a few MHz) and thus
improve the IIP3.
Input
Output
& Vd
Rbias
71
2
1
4
3
Figure 6. Source Resistor Bias Method.
Maximum current (about 60 mA)
occurs when Rbias=0.
A plot of typical Id vs. Rbias is
shown in Figure 7.
0
10
60
50
40
30
20
040
20 60 80 100 140120
I
d
(mA)
R
bias
(Ω)
Figure 7. Device Current vs. Rbias.
The approximate value of the
external resistor, Rbias, may also
be calculated from:
Rbias = 964 (1 – 0.112 √ Id)
Id
where Rbias is in ohms and Id is the
desired device current in mA.
A simple method for DC ground-
ing the input terminal (Pin 3) is to
use a shunt inductor that is also
part of the noise-matching
network.
Adaptive Biasing
For applications in which input
power levels vary over a wide
range, it may be useful to dynami-
cally adapt the bias of the
MGA-71543 to match the signal
level. A sensor senses the signal
level at some point in the system
(usually in the baseband circuitry)
and automatically adjusts the bias
current of the amplifier accord-
ingly. The main advantage of
adaptive biasing is conservation of
supply current (longer battery life)
by using only the amount of
current necessary to handle the
input signal without distortion.
Adaptive biasing of the
MGA-71543 can be accomplished
by simple digital means (Figure 8).
For instance simple electronic
switches can be used to control
the value of the source resistor in
discrete increment.
Digital
Control
3
DC
Return
Path
2
41
Figure 8. Adaptive Bias Control using Digital
Method.
16
Applying the Device Voltage
Common to all methods of
biasing, voltage Vd is applied to
the MGA-71543 through the RF
output connection (Pin 2). The
bias line is capacitively bypassed
to keep RF from the DC supply
lines and prevent resonant dips or
peaks in the response of the
amplifier. Where practical, it may
be cost effective to use a length of
high impedance transmission line
(usually λ/
4 line) in place of the
RFC.
When using the gate bias method,
the applied device voltage, Vds, is
equal to voltage Vd (at pin 2) since
Vs is zero.
RF
Output
Vd ~ +2.5 V
Vref = -0.5 V
RF
Input
71
3
2
4
1
Figure 9. DC Schematic for Gate Bias.
For source resistor biasing
method, the applied device
voltage, Vds, is Vd – Vs. The bias
control voltage is Vs (Pin 4) which
is set by the external bias resistor.
A source resistor bias circuit is
shown in Figure 10.
RF
Output
Vd = +3 V
Rbias
RF
Input
71
3
2
4
1
Figure 10. DC Schematic for Source Bias.
Controlling the Switch
The device current controls the
state of the MGA-71543 (amplifier
or bypass mode). For device
currents greater than 3 mA, it
functions as an amplifier. If a
lower current is drawn, the gain of
the amplifier is significantly
reduced and the performance will
degrade. If the device current is
set to zero, the MGA-71543 is
switched into a bypass mode in
which the signal is routed around
the amplifier with a loss of about
5.6 dB.
The simplest way of switching the
MGA-71543 to the bypass mode is
to open-circuit the terminals at
Pins 1 and 4. The bypass mode is
also set by increasing the source
resistance Rbias to greater than
1MΩ. With the DC ground con-
nection open, the internal control
circuit of the MGA-71543 auto-
switches from amplifier mode into
a bypass mode and the device
current drops to near zero. Typical
bypass mode current is 2 μA.
32
41
R
bias
Bypass Switch
Enable
Figure 11. MGA-71543 Amplifier/Bypass State
Switching.
A digital switch can be used to
control the amplifier and Bypass
State as shown in Figure 11.
Switching Speed
The speed at which the
MGA-71543 switches between
states is extremely fast. The
intrinsic switching speed is
typically around 10 ns. However in
practical circuits, the switching
speed is limited by the time
constants of the external bias
circuit components (current
setting resistor and bypass
capacitors). These external
components increase the switch-
ing time to around 100ns. Further-
more, the switching ON time is
slightly lower (faster) than the
switching OFF time (i.e. It
switches on faster).
Thermal issues
The Mean Time To Failure (MTTF)
of semiconductors is inversely
proportional to the operating
temperature.
When biased at 3V and 10 mA for
LNA applications, the power
dissipation is 3V x 10 mA = 30 mW.
The temperature increment from
the RFIC channel to its case is
then 30 mW x θjc = 0.030 watt x
240°C/watt = 7.2°C. Subtracting
the channel-to-case temperature
rise from the suggested maximum
junction temperature of 150°C, the
resulting maximum allowable case
temperature is 143°C.
The worst case thermal situation
occurs when the MGA-71543 is
operated at its maximum operat-
ing conditions in an effort to
maximize output power or achieve
minimum distortion. A similar
calculation for the maximum
operating bias of 4.2 volts and
50 mA yields a maximum allow-
able case temperature of 100°C.
(i.e. 210 mW x θjc = 0.210 watt x
240°C/watt = 50.4°C
150°C – 50.4°C = 100°C.)
This calculation assumes the
worst case of no RF power being
extracted from the device. When
operated in a saturated mode,
both power-added efficiency and
the maximum allowable case
temperature will increase.
Note: “Case” temperature for
surface mount packages such as
the SOT-343 refers to the interface
between the package pins and the
17
mounting surface, i.e., the tem-
perature at the PCB mounting
pads. The primary heat path from
the RFIC chip to the system
heatsink is by means of conduc-
tion through the package leads
and ground vias to the ground
plane of the PCB.
Grounding Consideration in
PCB Layout
The MGA-71543 requires careful
attention during grounding. Any
device with gain can be made to
oscillate if feedback is added.
Since poor grounding adds series
feedback, it can cause the device
to oscillate. Poor grounding is one
of the most common causes of
oscillation in RF components.
Careful attention should be used
when RF bypassing the ground
terminals when the device is
biased using the source resistor
method.
Package Footprint
The PCB pad print for the minia-
ture, 4-lead SOT-343 (SC70)
package is shown in Figure 12.
1.30
0.051
0.60
0.024
0.9
0.035
Dimensions in mm
inches
1.15
0.045
2.00
0.079
1.00
0.039
Figure 12. Recommended PCB Pad Layout for
Avago’s SC70 4L/SOT-343 Products.
The layout is shown with a
footprint of the MGA-71543
superimposed on the PCB pads for
reference.
RF bypass
For layouts using the source
resistor method of biasing, both of
the ground terminals of the
MGA-71543 must be well bypassed
to maintain device stability.
Beginning with the package pad
print in Figure 12, and RF layout
similar to the one shown in
Figure 13 is a good starting point
for using the MGA-71543 with
capacitor-bypassed ground
terminals. It is a best practice to
use multiple vias to minimize
overall ground path inductance.
71
Size 0402
recommended
for the bypass
capacitors
Figure 13. Layout for RF Bypass.
PCB Materials
0.031 inches thick of FR-4 or G-10
type dielectric materials are
typical choices for most low cost
wireless applications using single
layer printed boards. As an
alternative, a Getek material with
a multilayer printed circuit board
can be used for a smaller size
board, where:
1
st
layer: RF routing layer
2
nd
layer: Ground layer
3
rd
layer: Power (DC) routing layer
4
th
layer: Other RF routing layer
The spacing between the layers is
as follows:
Between the 1st and 2nd: 0.005"
Between the 2nd and 3rd: 0.020"
Between the 3rd and 4th: 0.005"
LNA Application
In the following sections the LNA
design is described in a more
general way. Sample evaluation
boards for 1900 MHz and 800 MHz
are shown in a table (Table 1) and
the appropriate board diagram is
shown (Figures 22 and 23). A
second smaller size board is also
shown (Figures 25 and 26) with
the corresponding table (Table 2).
The smaller board is an example
of reducing the size of the layout,
more suitable for handset manu-
facturers. For low noise amplifier
application, the LNA is typically
biased 6 to 20 mA.
The MGA-71543 is a conditionally
stable device, therefore, the
proper input and output loads
must be presented in addition to
properly RF grounding the device.
Please refer to the stability section
for tips on preventing oscillation.
The LNA can be switched ON or
OFF by a simply varying the
resistor to its ground leads as
described in previous sections.
Matching Networks for the LNA
LNA
Γ
in
Γ
L
Γ
s
or
Γ
o
p
t
Γ
opt
50Ω50Ω
Output
Match
Input
Match
Figure 14. Input and Output Matching
Terminology.
The input matching network
determines the noise figure and
return loss (S11) of our amplifier.
The output-matching network
determines the IP3 and output
return loss (S22). Furthermore,
both input and output matching
networks influence the gain. The
best gain (Maximum Available
Gain-MAG) and lowest input
return loss is obtained when both
the input and output are conju-
18
gately matched to 50Ω. For
instance at the input, when ΓΓ
ΓΓ
Γs =
ΓΓ
ΓΓ
Γin
* the highest gain with the best
power transfer is obtained where
ΓΓ
ΓΓ
Γs is the source reflection coeffi-
cient presented to the input pin.
For best noise, ΓΓ
ΓΓ
Γs = ΓΓ
ΓΓ
ΓOPT, where
ΓΓ
ΓΓ
ΓOPT is the source reflection
coefficient for optimum NF match
and is determined empirically
(experimentally). However, an
input match where ΓΓ
ΓΓ
Γs = ΓΓ
ΓΓ
ΓOPT does
not necessarily yield the best
return loss nor the best gain.
Input Match
To allow flexibility for the de-
signer, the LNA is intended to be
used with external matching
network at the input.
The noise performance of a two
port can be determined if the
values of the noise parameters
Fmin, rn=Rn/50 and ΓΓ
ΓΓ
ΓOPT are
known (shown in the datasheet),
where these parameters are given
by:
F50 = Fmin + 4rn|Γs – Γ
OPT
|
2
(1 – |Γs|
2
) |1 + Γ
OPT
|
2
rn = (F50 – Fmin) |1 + Γ
OPT
|
2
4|Γ
OPT
|
2
Γ
OPT
= Z
OPT
– Z
O
Z
OPT
+ Z
O
Where
Fmin is the minimum noise figure
that is obtained when ΓΓ
ΓΓ
Γs = ΓΓ
ΓΓ
ΓOPT .
Rn is the noise resistance that
indicates the sensitivity of the
noise performance.
ΓΓ
ΓΓ
Γs is the source reflection coeffi-
cient presented to the input pin.
ΓΓ
ΓΓ
ΓOPT is the source reflection
coefficient for optimum NF match.
Any change in ΓΓ
ΓΓ
Γs affects the noise
figure of our amplifier. To obtain
the best noise figure, the following
relation: ΓΓ
ΓΓ
Γs = ΓΓ
ΓΓ
ΓOPT must be
satisfied. However, this might
affect our return loss at the input
because it creates more mismatch
(at the input) and there is less
power transfer to the LNA.
Therefore the best solution should
be the one that gives a reasonable
input return loss with the best
noise figure associated to it.
The noise figure F of an amplifier
is determined by the input match-
ing circuit. The output matching
does not affect the noise (has a
significantly minimal effect on
noise figure).
To obtain the best noise match a
simple two elements match is
used at the input of the device.
Using the ΓΓ
ΓΓ
ΓOPT magnitude and
phase at the frequency of interest,
the noise match is done. The
topology that has a capacitor to
ground is ignored because it does
not allow the input to be DC
grounded as is required by the
source bias method. Therefore the
series-L-shunt-L topology is used.
The final values of the noise
matching circuit (input match)
was a result of some more empiri-
cal tuning in the lab that was a
compromise between the various
important parameters. Typical
Gain, noise and stability circles
are shown in Figures 17 – 20. Most
simulations were done using
Avago-EEsof’s Advanced Design
System (ADS).
Stability
A stable circuit is a circuit that
does not oscillate. Oscillation can
take the form of spurious signal
and noise generation. This usually
results in changes in DC operating
point (bias level fluctuates). The
oscillations can be triggered by
changes in the source (input
match), load (output match), bias
level and last but not least:
improper grounding.
Design for Stability
The main potential for oscillation
with the MGA-71543 is improper
grounding and/or improper RF
bypass capacitors. Any device
with gain can be made to oscillate
if feedback is added. Proper
grounding may be achieved by
minimizing inductance paths to
the ground plane. Passive compo-
nents should be chosen for high
frequency operation. Bias circuit
self resonance due to inadequate
bypass capacitors or inadequate
grounding may cause high fre-
quency, out of band, instability.
Smaller 0402 size bypass capaci-
tors are recommended to mini-
mize parasitic inductance and
resonance of the bias circuit.
Statistical Parameters
Several categories of parameters
appear within the electrical
specification portion of the
MGA-71543 datasheet. Parameters
may be described with values that
are either “minimum or maxi-
mum”, “typical” or “standard
deviations”.
The values for parameters are
based on comprehensive product
characterization data, in which
automated measurements are
made on a statistically significant
number of parts taken from
nonconsecutive process lots of
semiconductor wafers. The data
derived from product character-
ization tends to be normally
distributed, e.g. fits the standard
bell curve.
68%
95%
99%
Parameter Value
Mean (μ)
(typical)
-3σ-2σ-1σ+1σ+2σ+3σ
Figure 15. Normal Distribution Curve.
19
Parameters considered to be the
most important to system perfor-
mance are bounded by minimum
or maximum values. For the
MGA-71543, these parameters are:
Vref test, NFtest, Gatest, IIP3 test, and
ILtest. Each of the guaranteed
parameters is 100% tested as part
of the normal manufacturing and
test process.
Values for most of the parameters
in the table of Electrical Specifica-
tions that are described by typical
data are the mathematical mean
(μ), of the normal distribution
taken from the characterization
data. For parameters where
measurements or mathematical
averaging may not be practical,
such as S-parameters or Noise
parameters and the performance
curves, the data represents a
nominal part taken from the
center of the characterization
distribution. Typical values are
intended to be used as a basis for
electrical design.
To assist designers in optimizing
not only the immediate amplifier
circuit using the MGA-71543, but
to also evaluate and optimize
tradeoffs that affect a complete
wireless system, the standard
deviation (σ) is provided for
many of the Electrical Specifica-
tion parameters (at 25°C). The
standard deviation is a measure of
the variability about the mean. It
will be recalled that a normal
distribution is completely de-
scribed by the mean and standard
deviation.
Standard statistics tables or
calculations provide the probabil-
ity of a parameter falling between
any two values, usually symmetri-
cally located about the mean.
Referring to Figure 15 for
example, the probability of a
parameter being between ±1σ is
68.3%; between ±2σ is 95.4%; and
between ±3σ is 99.7%.
Phase Reference Planes
The positions of the reference
plane used to specify S-parameters
and Noise Parameters for the
MGA-71543 are shown in
Figure 16. As seen in the illustra-
tion, the reference planes are
located at the point where the
package leads contact the test
circuit.
Reference Planes
Test Circuit
Figure 16. Phase Reference Planes.
20
Figure 19. Noise Circles F = 1900 MHz,
Step Size: 0.2 dB.
Figure 20. Gain Circle F = 1900 MHz,
Step Size: 1.0 dB.
Figure 21. Load and Source Stability Circles.
Figure 18. Gain, Noise and Stability Circles.
Demonstration Board
Figure 22. Schematic Diagram of Evaluation Board Amplifier.
71
RF
Output
C10C11
C9
C8
L3
V
d
+3.0V
3
2
4
1
C4
C1 L1
L2
C5
C6
C2
SW2
SW1
R1
C7
R3
R2
R4
RF
Input
Noise Circles
NF = 1.55 dB
NF = 1.35 dB
NF = 1.15 dB
NF = 0.95 dB
NF = 0.75 dB
G = 14.8 dB
G = 15.8 dB
G = 16.8 dB
G = 17.8 dB
Load unstable
region
Source unstable Source stability circle
Load stability circle
Source stable
Load stable
region
G = 18.8 dB
Gain Circles
21
Figure 23. Amplifier Evaluation Circuit with Component Designators. Actual board size is 1.1 x 1.3 inches, 0.031 inches thick.
Agilent
MGA-71543
Eval Circuit
C11
C10
L3
L1
L2
R4
R3 R2
R1
Vc
REV 2EB 7/00
C5
Vd
GND
C2
C7
C8
C1
IN C6 C9
C4 OUT
Board Designation Description Part Number Package
PCS-1900 800 MHz
71 DUT[1] DUT[1] MGA-71543 SOT-343 (4 lead SC-70 package)
C1 100 pF 8.2 pF Size 0402
C2, C5, C6, C7, C10 100 pF 100 pF Size 0402
C9 47 pF 2.7 pF Size 0402
C4, C8, C11 0.01 μF 0.01 μF Size 0603 or 0402
L1 1.5 nH 18 nH TOKO LL1005 Size 0402
L2 2.7 nH 33 nH TOKO LL1005 Size 0402
L3 3.9 nH 33 nH TOKO LL1005 Size 0402
R1 51Ω51ΩSize 0402
R2 115Ω115ΩSize 0805 (for 6mA Bias)
R4 / L4 0Ω (1900) 18 nH — /LL1608-FH or 1005-FH Size 0805 (Jumper)/ Size 0603 (inductor)
R3 60Ω60ΩSize 0805 (for 10mA Bias)
Note 1: Device under Test
Table 1. Component Values for 1900 MHz and 800 MHz.
22
Figure 24. System Level Overview of MGA-71543 for Handset Designers.
ADC
Digital
Base-band
Processor
Analog
Front-end
Demodulator
Dual VCO
Dual
Synthesizer
ADC
DAC
RF Control Signal
(PDM )
DAC
MGA-71543
J10
These are the actual necessary components.
The other connectors and board space are only for production.
AGILENT TECHNOLOGIES
Vcc
Vcc
GND
GND
Cell_LNA
PCS_LNA
PCS_LNA
PCS_OUT
RF3
PCS_IN
RF1
J9
20.1 mm
0.791 in
J8
C38
C36
blue2_lna
rev2.1
L25 C12
C47
R24
R25
R37
L5
L6
C37
C9
J7
33.1 mm
1.303 in
U2
U4
L7
R38
C8
R20
R21
C44
GND
Cell_LNA
PCS_LNA
PCS_LNA
PCS_IN
C36
L25
C12
C47
R24
R16
R17
R18
R28
R25
R37
L5
L6
C37
C9
U2
U4
L7
R38
C8
R20
R21
C44
Software controlling the switch Manual switch control
C38
Figure 25. Small Size Amplifier Board with Components for Handset Focussed Designers.
23
4 layer Board Description Part Number Package
Designation PCS-1900
U2 or 71 DUT[1] MGA-71543 SOT-343 (SC-70)
U4 or O3 Switch b/n Gnd resistors FDG6303N Dual N-channel, Digital FET
C12 2.2 pF Size 0402
C8, C47 0.033 μF Size 0402
C9, C44 100 pF Size 0402
C38 Not used
C36, C37 27 pF Size 0402
L5 3.9 nH TOKO LL1005 Size 0402
L6 4.7 nH TOKO LL1005 Size 0402
L7 1.5 nH TOKO LL1005 Size 0402
L25 Not used For tuning/Not used here
R38 51ΩSize 0402
R20 36ΩSize 0402 (for 16 mA Bias)
R21 56ΩSize 0402 (for 11 mA Bias)
R24, R25 6ΩSize 0402
R16, R17 0ΩSize 0402 (Jumper)
R37 0ΩSize 0402 (Jumper)
R18, R28 Not used Used with other FET switches
Note 1: Device under Test
Table 2. Component Values for 1900 MHz Amplifier on Smaller Board.
References
1. Application note RLM020199, “Designing with the
MGA-72543 RFIC Amplifier/Bypass Switch”.
2. G.D.Vendelin, A.M.Pavio and U.L.Rhode,
“Microwave Circuit Design Using Linear and
Nonlinear Techniques”.
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-4193EN
AV02-3597EN - June 8, 2012
J10
AGILENT TECHNOLOGIES
blue2_lna
rev2.1
Vcc
Vcc
GND
GND
Cell_LNA
PCS_LNA
PCS_LNA
PCS_OUT
PCS_IN
J9 J8
C38
C36
L25 C12
C47
R24
R25
R37
L5
L6
C37
C9
J7
U2
U4
L7
R38
C8
R20
R21
C44
MGA-71543
RF OUT
Switch & Bias Control
U4 = FDG6303N
Dual N-channel, Digital FET
SC70-6 S1
D1
G2 S2
4 or 1*
G1 D2
RF IN
C12
C9 OUTR38
R25
R24
R16 (0Ω Jumper)
R17 (0Ω Jumper)
FDG6303N
Selects current
set by R20 Vd = 3 Volt
R38
L7
L6
C36
MGA-71543
R20
Not used in this case.
These could be used with
other digital FET to select
more discrete current values.
R21
5 or 2
6 or 3
3 or 6
2 or 5
1 or 4*
C37 C44 C47
C8
L5
IN
4 or 1*
5 or 2
6 or 3
3 or 6
2 or 5
1 or 4*
Selects current
set by R21
R28
(0Ω Jumper) R18
(0Ω Jumper)
03
Figure 26. LNA Bypass Circuit Control on Small Test Board.