TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181
Devices
Qualified Level
2N718A 2N1613
2N1613L
JAN
JANTX
JANTXV
MAXIMUM RATINGS Ratings Symbol Value Unit
Collector-Emitter Voltage VCEO 30 Vdc
Collector-Base Voltage VCBO 75 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Collector Current IC 500 mAdc
Total Power Dissipation
@ TA = +250C (1) 2N718A
2N1613, L
@ TC = +250C (2) 2N718A
2N1613, L
PT
0.5
0.8
1.8
3.0
W
Operating & Storage Junction Temperature Range TJ, Tstg -55 to +175 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
2N718A
2N1613, L RθJC
97
58
0C/W
1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C
2) Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A for TC > +250C
TO-18 (TO-206AA)*
2N718A
TO-39 (TO-205AD)*
2N1613
TO-5*
2N1613L
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 30 mAdc V(BR)CEO 30 Vdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc, RBE = 10 Ω
V(BR)CER
50
Vdc
Collector-Base Cutoff Current
VCB= 60 Vdc
ICBO
10
ηAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
10
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N718A, 2N1613, 2N1613L JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
hFE 20
35
40
20
120
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc VCE(sat)
1.5 Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc VBE(sat) 1.3 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz hfe 3.0
Small-Signal Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz hfe 30
35 100
150
Small-Signal Short Circuit Input Impedance
IC = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz hib 4.0 8.0 Ω
Small-Signal Short Circuit Output Admittance
IC = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz hob 1.0 ηΩ
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 25 pF
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See Figure 1 of MIL-PRF-19500/181) ton + toff 30 ηs
(3)Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
