PDTC123YU,115 - NEXPERIA

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On 7 February 2017 the former NXP Standard Product business became a new company with the

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1. Product profile

1.1 General description

NPN Resistor-Equipped Transistors (RET) family.

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

1.3 Applications

1.4 Quick reference data

PDTC123Y series

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Rev. 04 — 16 November 2009 Product data sheet

Table 1. Product overview

Type number Package PNP complement

NXP JEITA JEDEC

PDTC123YE SOT416 SC-75 - PDTA123YE

PDTC123YK SOT346 SC-59A TO-236 PDTA123YK

PDTC123YM SOT883 SC-101 - PDTA123YM

PDTC123YS[1] SOT54 SC-43A TO-92 PDTA123YS

PDTC123YT SOT23 - TO-236AB PDTA123YT

PDTC123YU SOT323 SC-70 - PDTA123YU

Built-in bias resistors Reduces component count

Simplifies circuit design Reduces pick and place costs

General-purpose switching and

amplification

Circuit drivers

Inverter and interface circuits

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 50 V

IOoutput current (DC) - - 100 mA

R1 bias resistor 1 (inpu t) 1.54 2.2 2.86 kΩ

R2/R1 bias resistor ratio 3.6 4.5 5.5

Product data sheet Rev. 04 — 16 November 2009 2 of 11

NXP Semiconductors PDTC123Y series

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Symbol

SOT54

1 input (base)

2 output (collector)

3 GND (emitter)

SOT54A

1 input (base)

2 output (collector)

3 GND (emitter)

SOT54 varia nt

1 input (base)

2 output (collector)

3 GND (emitter)

SOT23; SOT323; SOT346; SOT416

1 input (base)

2 GND (emitter)

3 output (collector)

SOT883

1 input (base)

2 GND (emitter)

3 output (collector)

001aab34

006aaa145

001aab34

006aaa145

001aab44

006aaa145

006aaa14

sym007

Transparent

top view

sym007

Product data sheet Rev. 04 — 16 November 2009 3 of 11

NXP Semiconductors PDTC123Y series

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

3. Ordering information

[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Table 4. Orderin g i nformation

Type number Package

Name Description Version

PDTC123YE SC-75 plastic surface mounted package; 3 leads SOT416

PDTC123YK SC-59A plastic surface mounted package; 3 leads SOT346

PDTC123YM SC-101 leadless ultra small plastic package; 3 solder lands;

body 1.0 ×0.6 ×0.5 mm SOT883

PDTC123YS[1] SC-43A plastic single -ended leaded (through hole) package;

3 leads SOT54

PDTC123YT - plastic surface mounted package; 3 le ads SOT23

PDTC123YU SC-70 plastic surface mounted package; 3 leads SOT323

Table 5. Marking codes

Type number Marking code[1]

PDTC123YE 19

PDTC123YK 31

PDTC123YM G7

PDTC123YS TC123Y

PDTC123YT *AL

PDTC123YU *19

Product data sheet Rev. 04 — 16 November 2009 4 of 11

NXP Semiconductors PDTC123Y series

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reflow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 50 V

VEBO emitter-base voltage open collector - 5 V

VIinput voltage

positive - +12 V

negative - −5V

IOoutput current (DC) - 100 mA

ICM peak collector current single pulse;

tp≤1ms -100mA

Ptot total power dissipation Tamb ≤25 °C

SOT416 [1] -150mW

SOT346 [1] -250mW

SOT883 [2][3] -250mW

SOT54 [1] -500mW

SOT23 [1] -250mW

SOT323 [1] -200mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Table 7. Thermal characteris tics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air

SOT416 [1] --833K/W

SOT346 [1] --500K/W

SOT883 [2][3] --500K/W

SOT54 [1] --250K/W

SOT23 [1] --500K/W

SOT323 [1] --625K/W

Product data sheet Rev. 04 — 16 November 2009 5 of 11

NXP Semiconductors PDTC123Y series

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

7. Characteristics

Table 8. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off

current VCB =50V; I

E= 0 A - - 100 nA

ICEO collector-emitter

cut-off current VCE =30V; I

B=0A - - 1 μA

VCE =30V; I

B=0A;

Tj=150°C--50μA

IEBO emitter-base cut-off

current VEB =5V; I

C= 0 A - - 700 μA

hFE DC current gain VCE =5V; I

C=5mA 35 - -

VCEsat collector-emitter

saturation voltage IC=10 mA; IB= 0.5 mA - - 150 mV

VI(off) off-state input voltage VCE =5V; I

C=100μA - 0.75 0.3 V

VI(on) on-state input voltage VCE = 300 mV; IC= 20 mA 2.5 1.15 - V

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ

R2/R1 bias resistor ratio 3.6 4.5 5.5

Cccollector capacit ance VCB =10V; I

E=i

e=0A;

f=1MHz --2pF

Product data sheet Rev. 04 — 16 November 2009 6 of 11

NXP Semiconductors PDTC123Y series

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

Fig 1. DC current gain as a function of collector

current; typical values Fig 2. Collector- em itter saturation voltage as a

function of collector current; typical values

VCE = 0.3 V

(1) Tamb = −40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

VCE = 5 V

(1) Tamb = −40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig 3. On-state input voltage as a function of

collector current; typical values Fig 4. Off-state input voltage as a function of

collector current; typical values

IC (mA)

10−1102

101

006aaa095

102

103

hFE

(1)

(2)

(3)

IC (mA)

110

006aaa096

10−1

VCEsat

(V)

10−2

(1)

(3)

(2)

006aaa097

IC (mA)

10−1102

101

VI(on)

(V)

10−1

(1)

(3)

(2)

IC (mA)

10−1101

006aaa098

VI(off)

(V)

10−1

(1)

(2)

(3)

Product data sheet Rev. 04 — 16 November 2009 7 of 11

NXP Semiconductors PDTC123Y series

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

8. Package outline

Fig 5. Pac kage outline SOT416 (SC-75) Fig 6. Pa ckage outline SOT346 (SC-59A/TO-236)

Fig 7. Package outline SOT883 (SC-101) Fig 8. Package outline SOT54 (SC-43A/TO-92)

Fig 9. Pac kage outline SOT54A Fig 10. Package outline SOT54 variant

04-11-04Dimensions in mm

0.95

0.60

1.8

1.4

1.75

1.45

0.9

0.7

0.25

0.10

0.30

0.15

30.45

0.15

04-11-11Dimensions in mm

3.0

2.5

1.7

1.3

0.26

0.10

1.9

0.50

0.35

1.3

1.0

3.1

2.7

0.6

0.2

03-04-03Dimensions in mm

0.62

0.55

0.47

0.50

0.46

0.65

0.20

0.12

0.30

0.22

0.30

0.22

1.02

0.95

0.35

04-11-16Dimensions in mm

5.2

5.0

14.5

12.7

4.8

4.4

4.2

3.6

0.45

0.38

0.48

0.40

1.27

2.54

04-06-28Dimensions in mm

5.2

5.0

14.5

12.7

4.8

4.4

4.2

3.6

0.45

0.38

0.48

0.40

2.54

5.08

3 max

05-01-10Dimensions in mm

5.2

5.0

14.5

12.7

4.8

4.4

4.2

3.6

0.45

0.38

0.48

0.40

1.27

2.54

2.5

max

Product data sheet Rev. 04 — 16 November 2009 8 of 11

NXP Semiconductors PDTC123Y series

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

9. Packing information

[1] For further information and the availability of packing methods, see Section 12.

Fig 11. Package outline SOT23 (TO-236AB) Fig 12. Package outline SOT323 (SC-70)

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

04-11-04Dimensions in mm

0.45

0.15

1.1

0.8

2.2

1.8

2.2

2.0

1.35

1.15

1.3

0.4

0.3

0.25

0.10

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 5000 10000

PDTC123YE SOT416 4 mm pitch, 8 mm tape and reel -115 - -135

PDTC123YK SOT346 4 mm pitch, 8 mm tape and reel -115 - -135

PDTC123YM SOT883 2 mm pitch, 8 mm tape and reel - - -315

PDTC123YS SOT54 bulk, straight leads - -412 -

SOT54A tape and reel, wide pitch - - -116

tape ammopack, wide pitch - - -126

SOT54 variant bulk, delta pinning - -112 -

PDTC123YT SOT23 4 mm pitch, 8 mm tape and reel -215 - -235

PDTC123YU SOT323 4 mm pitch, 8 mm tape and reel -115 - -135

Product data sheet Rev. 04 — 16 November 2009 9 of 11

NXP Semiconductors PDTC123Y series

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

10. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PDTC123Y_SER_4 20091116 Product data sheet - PDTC123Y_SER_3

Modifications: •This data sheet was changed to reflec t the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical

content.

PDTC123Y_SER_3 20050324 Product data sheet - PDTC123YT_2

PDTC123YT_2 200 40510 Objective data sheet - PDTC123YT_1

PDTC123YT_1 200 40406 Objective data sheet - -

Product data sheet Rev. 04 — 16 November 2009 10 of 11

NXP Semiconductors PDTC123Y series

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warrant ies as to t he accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short dat a sheet is an extract from a full dat a sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

11.3 Disclaimers

General — In formation in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any repr esentatio ns or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ra tings System of IEC 60134) may cause permane nt

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — NXP Semiconductors product s are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Not hing in this document may be interpret ed or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respective ow ners.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors PDTC123Y series

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of rele ase: 16 November 2009

Document identifier: PDTC123Y_SER_4

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Packing information . . . . . . . . . . . . . . . . . . . . . 8

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Contact information. . . . . . . . . . . . . . . . . . . . . 10

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11