PZT3904
SMALL SIGNAL NPN TRANSIST OR
PRELIMINARY DATA
■SILICO N EP ITA X IAL PLANA R NP N
TRANSISTOR
■SOT-223 PLA ST IC PAC KAG E FOR
SURFACE MOUNTING CIRCUITS
■TAPE AND RE EL PA CKING
■THE PNP COMPLEMENTARY TYPE IS
PZT3906
APPLICATIONS
■WELL SUITABLE FOR SMD MOTHER
BO ARD AS S EMB L Y
■SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
®
INT E R NAL SCH E M ATI C DIAG RA M
June 2002
12
2
3
SOT-223
Type Marking
PZT3904 3904
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltag e (IE = 0) 60 V
VCEO Collector-Emitter Voltage (IB = 0) 40 V
VEBO Emitter-Base Voltage (IC = 0) 6 V
ICCollector Current 200 m A
Ptot Total Dissipation at TC = 25 oC1W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
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THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient Max 125 oC/W
• Devic e mounted on a PCB area of 1 cm2
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICEX Collector Cut-off
Current (VBE = -3 V) VCE = 30 V 50 nA
IBEX Base Cut-off Cu rrent
(VBE = -3 V) VCE = 30 V 50 nA
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 1 mA 40 V
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = 10 µA60 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10 µA 6V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC = 10 mA IB = 1 mA
IC = 50 mA IB = 5 mA 0.2
0.2 V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 10 mA IB = 1 mA
IC = 50 mA IB = 5 mA 0.65 0.85
0.95 V
V
hFE∗DC Current Ga in IC = 0.1 mA VCE = 1 V
IC = 1 mA VCE = 1 V
IC = 10 mA VCE = 1 V
IC = 50 mA VCE = 1 V
IC = 100 mA VCE = 1 V
60
80
100
60
30
300
fTTransition Frequency IC = 10 mA VCE = 20 V f = 100 MHz 250 270 MHz
CCBO Collector-Base
Capacitance IE = 0 VCB = 10 V f = 1 MHz 4 pF
CEBO Emitter-Base
Capacitance IC = 0 VEB = 0.5 V f = 1 MHz 18 pF
NF Noise Figure VCE = 5 V IC = 0.1 mA f = 10 Hz
to 15.7 KHz RG = 1 KΩ5dB
t
d
t
r
Delay Time
Rise Time IC = 10 mA IB = 1 mA
VCC = 30 V 35
35 ns
ns
ts
tfStorage Time
Fall Time IC = 10 mA IB1 = -IB2 = 1 mA
VCC = 30 V 200
50 ns
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
PZT3904
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.80 0.071
B 0.60 0.70 0.80 0.024 0.027 0.031
B1 2.90 3.00 3.10 0.114 0.118 0.122
c 0.24 0.26 0.32 0.009 0.010 0.013
D 6.30 6.50 6.70 0.248 0.256 0.264
e 2.30 0.090
e1 4.60 0.181
E 3.30 3.50 3.70 0.130 0.138 0.146
H 6.70 7.00 7.30 0.264 0.276 0.287
V10
o
10
o
A1 0.02
P008B
SOT-223 MECHANICAL DATA
PZT3904
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequ ences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird par ties wh ich ma y resul t from i ts use. N o li cen se is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specif ication mentioned in this publication are
subject to change without notice. This publication supersedes and r eplac es all information previously supplie d. STMicroelectronics products
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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PZT3904
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