1Oct-27-1997
BSM 50 GB 170 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• RG on,min = 27 Ohm
Type VCE ICPackage Ordering Code
BSM 50 GB 170 DN2 1700V72AHALF-BRIDGE 1 C67070-A2701-A67
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1700 V
Collector-gate voltage
RGE = 20 kΩVCGR 1700
Gate-emitter voltage VGE ± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC
50
72 A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
ICpuls
100
144
Power dissipation per IGBT
TC = 25 °C Ptot 500 W
Chip temperature Tj+ 150 °C
Storage temperature Tstg -40 ... + 125
Thermal resistance, chip case RthJC ≤ 0.25 K/W
Diode thermal resistance, chip case RthJCD≤ 0.75
Insulation test voltage, t = 1min. Vis 4000 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 -F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56
2Oct-27-1997
BSM 50 GB 170 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 4 mA VGE(th) 4.8 5.5 6.2 V
Collector-emitter saturation voltage
VGE = 15 V, IC = 50 A, Tj = 25 °C
VGE = 15 V, IC = 50 A, Tj = 125 °C
VCE(sat)
-
- 4.6
3.4 5.3
3.9
Zero gate voltage collector current
VCE = 1700 V, VGE = 0 V, Tj = 25 °C
VCE = 1700 V, VGE = 0 V, Tj = 125 °C
ICES
-
- 1.6
0.4 -
0.5 mA
Gate-emitter leakage current
VGE = 20 V, VCE = 0 V IGES - - 320 nA
AC Characteristics
Transconductance
VCE = 20 V, IC = 50 A gfs 18 --S
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Ciss - 8 -nF
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Coss - 0.64 -
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Crss - 0.25 -
3Oct-27-1997
BSM 50 GB 170 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
VCC = 1200 V, VGE = 15 V, IC = 50 A
RGon = 27 Ω
td(on)
- 350 700
ns
Rise time
VCC = 1200 V, VGE = 15 V, IC = 50 A
RGon = 27 Ω
tr
- 150 300
Turn-off delay time
VCC = 1200 V, VGE = -15 V, IC = 50 A
RGoff = 27 Ω
td(off)
- 650 1000
Fall time
VCC = 1200 V, VGE = -15 V, IC = 50 A
RGoff = 27 Ω
tf
- 90 140
Free-Wheel Diode
Diode forward voltage
IF = 50 A, VGE = 0 V, Tj = 25 °C
IF = 50 A, VGE = 0 V, Tj = 125 °C
VF
-
- 2.1
2.3 -
2.8 V
Reverse recovery time
IF = 50 A, VR = -1200 V, VGE = 0 V
diF/dt = -600 A/µs, Tj = 125 °C
trr
- 0.3 -
µs
Reverse recovery charge
IF = 50 A, VR = -1200 V, VGE = 0 V
diF/dt = -600 A/µs
Tj = 25 °C
Tj = 125 °C
Qrr
-
- 12
4 -
-
µC
4Oct-27-1997
BSM 50 GB 170 DN2
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
0 20 40 60 80 100 120 °C 160
TC
0
50
100
150
200
250
300
350
400
450
W
550
Ptot
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
-1
10
0
10
1
10
2
10
3
10
A
IC
10 0 10 1 10 2 10 3 V
VCE
DC
10 ms
1 ms
100 µs
10 µs
tp = 1.6µs
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
0 20 40 60 80 100 120 °C 160
TC
0
10
20
30
40
50
60
70
A
90
IC
Transient thermal impedance IGBT
Zth JC = ƒ(tp)
parameter: D = tp / T
-3
10
-2
10
-1
10
0
10
K/W
ZthJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
5Oct-27-1997
BSM 50 GB 170 DN2
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
0.0 1.0 2.0 3.0 4.0 V6.0
VCE
0
10
20
30
40
50
60
70
80
A
100
IC
17V
15V
13V
11V
9V
7V
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
0.0 1.0 2.0 3.0 4.0 V6.0
VCE
0
10
20
30
40
50
60
70
80
A
100
IC
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
0 2 4 6 8 10 V14
VGE
0
20
40
60
80
100
120
140
160
A
200
IC
6Oct-27-1997
BSM 50 GB 170 DN2
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 50 A
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 µC 0.9
QGate
0
2
4
6
8
10
12
14
16
V
20
VGE
1200 V800 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0, f = 1 MHz
0 5 10 15 20 25 30 V40
VCE
-1
10
0
10
1
10
2
10
nF
C
Ciss
Coss
Crss
Reverse biased safe operating area
ICpuls = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tp ≤ 1 ms, L < 50 nH
0 200 400 600 800 1000 1200 1400 V1800
VCE
0.0
0.5
1.0
1.5
2.5
ICpulsIC
di/dt = 700A/µs
1500A/µs
2600A/µs
Short circuit safe operating area
ICsc = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tp ≤ 10 µs, L < 50 nH
0 200 400 600 800 1000 1200 1400 V1800
VCE
0
2
4
6
8
12
ICsc/IC
circuit: >1s
° time between short
short circuit: <1000
° allowed numbers of
di/dt = 700A/µs
1500A/µs
2600A/µs
7Oct-27-1997
BSM 50 GB 170 DN2
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, RG = 27 Ω
0 20 40 60 80 A120
IC
1
10
2
10
3
10
4
10
ns
t
tdoff
tr
tf
tdon
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, IC = 50 A
0 20 40 60 80 Ω120
RG
1
10
2
10
3
10
4
10
ns
t tdoff
tr
tdon
tf
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, RG = 27 Ω
0 20 40 60 80 A120
IC
0
10
20
30
40
50
60
70
80
90
100
mWs
120
E
Eon
Eoff
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, IC = 50 A
0 20 40 60 80 Ω120
RG
0
10
20
30
40
50
60
70
80
90
100
mWs
120
E
Eon
Eoff
8Oct-27-1997
BSM 50 GB 170 DN2
Forward characteristics of fast recovery
reverse diode IF = f(VF)
parameter: Tj
0.0 0.5 1.0 1.5 2.0 2.5 V3.5
VF
0
10
20
30
40
50
60
70
80
A
100
IF
Tj=25°C
=125°C
j
T
Transient thermal impedance Diode
Zth JC = ƒ(tp)
parameter: D = tp / T
-4
10
-3
10
-2
10
-1
10
0
10
K/W
ZthJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
9Oct-27-1997
BSM 50 GB 170 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 250 g
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warranty is granted exclusively pursuant the terms and conditions of the supply
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