Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T 1851N Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Periodische Vorwarts- und Ruckwarts-Spitzensperrspannung Tvj = -40C... Tvj max Kenndaten repetitive peak forward off-state and reverse voltages VDRM,VRRM 6000 7000 6500 V V Periodische Vorwarts- und Ruckwarts-Spitzensperrspannung Tvj = 0C... Tvj max repetitive peak forward off-state and reverse voltages VDRM,VRRM 6200 7200 6700 V V Durchlastrom-Grenzeffektivwert maximum RMS on-state current ITRMSM 4000 A Elektrische Eigenschaften Dauergrenzstrom average on-state current TC = 85 C TC = 60 C ITAVM 1850 A 2500 A Stostrom-Grenzwert surge current Tvj = 25 C, tP = 10 ms Tvj = Tvj max, tP = 10 ms ITSM 50000 A 48000 A Grenzlastintegral It-value Tvj = 25 C, tP = 10 ms Tvj = Tvj max, tP = 10 ms It 12500 10 As 11500 10 As Kritische Stromsteilheit critical rate of rise of on-state current DIN IEC 60747-6 f = 50 Hz, iGM = 3 A, diG/dt = 6 A/s (diT/dt)cr Kritische Spannungssteilheit critical rate of rise of off-state voltage Tvj = Tvj max, vD = 0,67 VDRM th 5.Kennbuchstabe / 5 letter H (dvD/dt)cr Charakteristische Werte / Characteristic values Durchlaspannung on-state voltage Tvj = Tvj max , iT = 3000A vT typ. max. 2,45 V 2,65 V Schleusenspannung threshold voltage Tvj = Tvj max V(TO) typ. max. 1,2 V 1,22 V Ersatzwiderstand slope resistance Tvj = Tvj max rT typ. max. 0,425 m 0,49 m Durchlakennlinie on-state characteristic Tvj = Tvj max typ. 300 A/s 2000 V/s Zundstrom gate trigger current Tvj = 25C, vD = 6 V IGT 0,774 0,000186 -0,0199 0,0235 0,623 0,000271 0,0346 0,0173 350 mA max. Zundspannung gate trigger voltage Tvj = 25C, vD = 6 V VGT max. 2,5 V Nicht zundender Steuerstrom gate non-trigger current Tvj = Tvj max , vD = 6 V Tvj = Tvj max , vD = 0,5 VDRM IGD max. max. 20 mA 10 mA Nicht zundende Steuerspannung gate non-trigger voltage Tvj = Tvj max , vD = 0,5 VDRM VGD max. 0,4 V Haltestrom holding current Tvj = 25C, vD = 6 V, RA = 5 IH max. 350 mA Einraststrom latching current Tvj = 25C, vD = 6 V, RGK 10 IL iGM = 3 A, diG/dt = 6 A/s, tg = 20 s max. 3 A Vorwarts- und Ruckwarts-Sperrstrom forward off-state and reverse current Tvj = Tvj max vD = VDRM, vR = VRRM i D, i R max. 500 mA Zundverzug gate controlled delay time DIN IEC 60747-6 Tvj = 25 C,iGM = 3 A, diG/dt = 6 A/s tgd max. v T = A + B i T + C Ln ( i T + 1) + D iT prepared by: J. Przybilla approved by: R. Keller BIP AM / SM PB, 2001-04-09, Przybilla J. / Keller max. date of publication: revision: A B C D A B C D 2 s 15.05.03 3 Seite/page 1/8 Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T 1851N Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit circuit commutated turn-off time Tvj = Tvj max, iTM = ITAVM = 100 V, v = 0,67 V ThermischevdvEigenschaften /dt = 20 V/s, -di /dt = 10 A/s / 4 letter O Mechanische4.Kennbuchstabe Eigenschaften T =T RM DM D Sperrverzogerungsladung recovered charge Ruckstromspitze peak reverse recovery current Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink vj tq DRM T th vj max iTM = ITAVM, -diT/dt = 10 A/s VR = 0,5VRRM, VRM = 0,8VRRM Tvj = Tvj max iTM = ITAVM, -diT/dt = 10 A/s VR = 0,5VRRM, VRM = 0,8VRRM typ. 600 max. 12 max. 280 s Qr mAs IRM Kuhlflache / cooling surface beidseitig / two-sided, = 180sin beidseitig / two-sided, DC Anode / anode, DC Kathode / cathode, DC RthJC Kuhlflache / cooling surface beidseitig / two-sided einseitig / single-sided RthCH max. max. max. max. 0,0064 0,006 0,011 0,0130 A C/W C/W C/W C/W max. 0,002 C/W max. 0,004 C/W 125 C Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj max Betriebstemperatur operating temperature Tc op -40...+125 C Lagertemperatur storage temperature Tstg -40...+150 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see annex Seite 3 page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft clamping force Steueranschlusse control terminals F DIN 46244 Gewicht weight Gate Kathode /Cathode 46...65 A 4,8x0,8 A 6,3x0,8 G typ. 1500 g Kriechstrecke creepage distance Schwingfestigkeit vibration resistance kN 33 mm f = 50 Hz 50 m/s Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen technischen Erlauterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP AM / SM PB, 2001-04-09, Przybilla J. / Keller Seite/page 2/8 Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T 1851N Mabild 1: Anode/Anode 4 5 2: Kathode/Cathode 1 2 4: Gate 5: Hilfskathode/ Cathode (control terminal) BIP AM / SM PB, 2001-04-09, Przybilla J. / Keller Seite/page 3/8 Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor R,t - Werte R R,T-Werte beidseitig two-sided anodenseitg anode-sided kathodenseitig cathode-sided T 1851N Analytische Elemente des transienten Warmewiderstandes Z thJC Analytical elements of transient thermal impedance Z thJC Pos. n 1 2 3 4 5 Rthn [C/W] 0,0008 0,0015 0,0007 0,0024 0,0006 n [s] 1,3 0,27 0,14 0,103 0,005 Rthn [C/W] 0,0051 0,0022 0,0007 0,0024 0,0006 n [s] 8 0,39 0,14 0,103 0,005 Rthn [C/W] 0,00710 0,0022 0,0007 0,0024 0,0006 n [s] 10,5 0,39 0,14 0,103 0,005 ZthJC = Analytische Funktion / Analytical function: 6 nmax n=1 Rthn 1 - e 7 -t n 0 ,0 1 4 c 0 ,0 1 2 a 0 ,0 0 6 th JC [K/W] d 0 ,0 0 8 Z 0 ,0 1 0 ,0 0 4 0 ,0 0 2 0 0 ,0 0 1 0 ,0 1 0 ,1 1 10 100 t [s ] Transienter innerer Warmewiderstand fur DC/ Transient thermal impedance Z thJC = f(t) for DC Beidseitige Kuhlung / Two-sided cooling Anodenseitige Kuhlung / Anode-sided cooling Kathodenseitige Kuhlung / Cathode-sided cooling BIP AM / SM PB, 2001-04-09, Przybilla J. / Keller Seite/page 4/8 Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T 1851N 4500 Diagramme Diagramme Durchlasskennlinie 4000 3500 3000 typ . m a x. iT [V] 2500 2000 1500 1000 500 0 0 0 ,5 1 1,5 2 2,5 3 3,5 v T [V ] Grenzdurchlakennlinie / Limiting on-state characteristic iT = f(vT) Tvj = Tvj max BIP AM / SM PB, 2001-04-09, Przybilla J. / Keller Seite/page 5/8 Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T 1851N 30 Durchlassverluste 20 10 c 5 b a -40C 2 +25C v G [V] +125C 1 0,5 0,2 10 20 50 100 200 500 1000 2000 5000 10000 iG [mA] Steuercharakteristik vG = f (iG) mit Zundbereichen fur VD = 6 V Gate characteristic vG = f (iG) with triggering area for VD = 6 V Hochstzulassige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation PGM = f (tg) : a - 20 W/10ms BIP AM / SM PB, 2001-04-09, Przybilla J. / Keller b - 40 W/1ms c - 60 W/0,5ms Seite/page 6/8 Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T 1851N 25 Tc beidseitig 20 Qr [mAs] 15 10 5 0 0 5 10 15 20 25 30 35 - d i/d t [ A / s ] Sperrverzogerungsladung / Recovered charge Qr = f(-di/dt) Tvj=Tvjmax, vR=0,5 VRRM, VRM=0,8 VRRM BIP AM / SM PB, 2001-04-09, Przybilla J. / Keller Seite/page 7/8 Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T 1851N 700 Ta bei Sinus 600 500 IRM [A] 400 300 200 100 0 0 5 10 15 20 25 30 35 - d i/d t [ A / s ] Ruckstromspitze / Peak reverse recovery current IRM = f(-di/dt) Tvj=Tvjmax, vR=0,5 VRRM, VRM=0,8 VRRM BIP AM / SM PB, 2001-04-09, Przybilla J. / Keller Seite/page 8/8 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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