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Symbol Test Conditions Maximum Ratings
ITRMS TVJ = TVJM A
ITAV TC = 85°C; 180° sine A
ITSM TVJ = 45°C t = 10 ms (50 Hz) A
VR = 0 t = 8.3 ms (60 Hz) A
TVJ = TVJM t = 10 ms (50 Hz) A
VR = 0 t = 8.3 ms (60 Hz) A
I2tTVJ = 45°C t = 10 ms (50 Hz) A2s
VR = 0 t = 8.3 ms (60 Hz) A2s
TVJ = TVJM t = 10 ms (50 Hz) A2s
VR = 0 t = 8.3 ms (60 Hz) A2s
(di/dt)cr TVJ = TVJM repetitive, IT =A A/ms
f = 50 Hz, tP = 200 ms
VD = 2/3 VDRM
IG= A, non repetitive, IT = ITAVM A/ms
diG/dt = A/ms
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM V/ms
RGK = ¥; method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30 msW
IT = ITAVM tP = 500 msW
PGAV W
VRGM V
TVJ °C
TVJM °C
Tstg °C
VISOL 50/60 Hz, RMS t = 1 min V~
IISOL £ 1 mA t = 1 s V~
MdMounting torque (M6) Nm/lb.in.
Terminal connection torque (M8) Nm/lb.in.
Weight Typical including screws g
ITRMS = 750 A
ITAV = 464 A
VRRM = 2000-2200 V
15000
16000
1125000
1062000
845000
813000
960 100
1 500
1
1000
120
60
30
10
-40...130
130
-40...125
3000
3600
13000
14400
750
464
Data according to IEC 60747 refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
Features
●Direct copper bonded Al2O3 -ceramic
with copper base plate
●Planar passivated chips
●Isolation voltage 3600 V~
●UL applied
●Keyed gate/cathode twin pins
Applications
●Motor control, soft starter
●Power converter
●Heat and temperature control for
industrial furnaces and chemical
processes
●Lighting control
●Solid state switches
Advantages
●Improved temperature and power
cycling
●Reduced protection circuits
4.5-7/40-62
11-13/97-115
650
VRSM VRRM Type
VDSM VDRM
VV
2100 2000 MCO 450-20io1
2300 2200 MCO 450-22io1
MCO 450
High Power Single
Thyristor Module
3542 3
254
030
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MCO 450
2
3
300
400
40
0.25
10
300
2
11
350
50 500 10
Symbol Test Conditions Characteristic Values
IRRM TVJ = TVJM; VR = VRRM mA
VTIT=A; T
VJ = 25°CV
VT0 For power-loss calculations only (TVJ = TVJM)V
rTmW
VGT VD= 6 V; TVJ = 25°CV
TVJ = -40°CV
IGT VD= 6 V; TVJ = 25°CmA
TVJ = -40°CmA
VGD TVJ = TVJM;V
D = 2/3 VDRM V
IGD TVJ = TVJM;V
D = 2/3 VDRM mA
ILTVJ = 25°C; VD = 6 V; tP = msmA
diG/dt = A/ms; IG = 1 A
IHTVJ = 25°C; VD = 6 V; RGK = ¥mA
tgd TVJ = 25°C; VD = 1/2 VDRM ms
diG/dt = A/ms; IG = A
tqTVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 ms typ. ms
dv/dt = V/ms; IT = A; -di/dt = A/ms
RthJC DC current K/W
RthJK DC current K/W
dSCreep distance on surface mm
dAStrike distance in air mm
aMaximum allowable acceleration m/s2
30 400
1
600 1.15
0.77
0.42
12.7
9.6
50
0.072
0.096
Dimensions in mm (1 mm = 0.0394")
0.01 0.1 1 10
1
10
100
10-3 10-2 10-1 100101102
0.1
1
10
IG
VG
A
A
IG
1: IGT, TVJ = 130°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
µs
tgd
V
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
IGD, T VJ = 130°C
4
2
156
Limit
typ.
3
TVJ = 25°C
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
UL 758, style 1385, File E 38136,
CSA class 5851, guide 460-1-1, appl. 41234
Type ZY 180 L (L = Left for pin pair 4/5)
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MCO 450
Fig. 6 Power dissipation versus on-
state current and ambient
temperature
Fig. 3 Surge overload current
ITSM: Crest value, t: duration Fig. 4 I2t versus time (1-10 ms) Fig. 5 Maximum forward current
at case temperature
Fig. 7 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
0 300 600 900 1200
0
500
1000
1500
2000
2500
3000
3500
4000
0.001 0.01 0.1 1
0
2000
4000
6000
8000
10000
12000
14000
0 200 400 600 800
0
200
400
600
800
1000
0 25 50 75 100 125 150
110
105
106
107
0 25 50 75 100 125 150
I2t
ITAVM
IdAVM
A
TA
TC
stms
t
A2s
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
800
°C
80 % VRRM
TVJ = 45°C
50 Hz
TVJ = 130°C
TVJ = 130°C
TVJ = 45°C
ITAVM
W
Ptot
A°C
RthKA K/W
0.03
0.07
0.12
0.2
0.3
0.4
0.6
°C
6xMCO450
Circuit
B6
TA
RthKA K/W
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
DC
VR = 0V
ITSM AA
0.01
0.02
0.03
0.045
0.06
0.08
0.12
Ptot
W
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MCO 450
Fig.10Transient thermal impedance
junction to heatsink
0 300 600 900
0
500
1000
1500
2000
2500
3000
3500
4000
t
ZthJK
s
t
10-3 10-2 10-1 100101102
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
K/W
ZthJC
IRMS
Ptot
0 25 50 75 100 125 150
A
6xMCO450
Circuit
W3
10-3 10-2 10-1 100101102
0.00
0.02
0.04
0.06
0.08
0.10
0.12
DC
180°
120°
60°
30°
DC
180°
120°
60°
30°
°C
TA
W
K/W
s
RthKA K/W
0.01
0.02
0.03
0.045
0.06
0.08
0.12
Fig. 9 Transient thermal impedance
junction to case
Fig. 8 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.072
180°0.0768
120°0.081
60°0.092
30°0.111
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0035 0.0054
2 0.0186 0.098
3 0.0432 0.54
4 0.0067 12
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.096
180°0.1
120°0.105
60°0.116
30°0.135
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0035 0.0054
2 0.0186 0.098
3 0.0432 0.54
4 0.0067 12
5 0.024 12
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