NDT456P_NL - Fairchild Semiconductor

December 1998

NDT456P

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

______________________________________________________________________________

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter NDT456P Units

VDSS Drain-Source Voltage -30 V

VGSS Gate-Source Voltage ±20 V

IDDrain Current - Continuous (Note 1a) ±7.5 A

- Pulsed ±20

PDMaximum Power Dissipation (Note 1a) 3W

(Note 1b) 1.3

(Note 1c) 1.1

TJ,TSTG Operating and Storage Temperature Range -65 to 150 °C

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W

NDT456P Rev. F

-7.5 A, -30 V. RDS(ON) = 0.030 Ω @ VGS = -10 V

RDS(ON) = 0.045 Ω @ VGS = -4.5 V.

High density cell design for extremely low RDS(ON).

High power and current handling capability in a widely

used surface mount package.

Power SOT P-Channel enhancement mode power field

effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process is especially tailored to

minimize on-state resistance and provide superior

switching performance. These devices are particularly

suited for low voltage applications such as notebook

computer power management, battery powered circuits,

and DC motor control.

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA -30 V

IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 µA

TJ = 55°C -10 µA

IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = - 250 µA -1 -1.5 -3 V

TJ = 125°C -0.5 -1.1 -2.6

RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, ID = -7.5 A 0.026 0.03 Ω

TJ = 125°C 0.035 0.054

VGS = - 4.5 V, ID = -6 A 0.041 0.045

ID(on) On-State Drain Current VGS = -10 V , VDS = - 5 V -20 A

VGS = -4.5 V, VDS = - 5 V -10

Gfs Forward Transconductance VGS = -10 V, ID = -7.5 A13 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = -15 V, VGS = 0 V,

f = 1.0 MHz 1440 pF

Coss Output Capacitance 905 pF

Crss Reverse Transfer Capacitance 355 pF

SWITCHING CHARACTERISTICS (Note 2)

tD(on)Turn - On Delay Time VDD = -15 V, ID = -7 A,

VGEN = -10 V, RGEN = 12 Ω10 20 ns

trTurn - On Rise Time 65 120 ns

tD(off) Turn - Off Delay Time 70 130 ns

tfTurn - Off Fall Time 70 130 ns

QgTotal Gate Charge VDS = -10 V,

ID = -7.5 A, VGS = -10 V 47 67 nC

Qgs Gate-Source Charge 5nC

Qgd Gate-Drain Charge 12 nC

NDT456P Rev. F

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current -2.5 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = - 2.5 A (Note 2) - 0.85 -1.2 V

trr Reverse Recovery Time VGS = 0 V, IF = - 2.5 A dIF/dt = 100 A/µs 140 ns

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the

(

)

−

(t)=

−

(t)=ID

(

)

×RDS(ON)@TJ

solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment,

typical RθJA is found to be:

a. 42oC when mounted on a 1 in2 pad of 2oz copper.

b. 95oC when mounted on a 0.066in2 pad of 2oz copper.

c. 110oC/W when mounted on a 0.00123in2 pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDT456P Rev. F

1a 1b 1c

NDT456P Rev. F

-50 -25 0 25 50 75 100 125 150

0.5

0.75

1.25

1.5

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

V = -10V

I =-7.5A

R , NORMALIZED

DS(ON)

-20-16-12-8-40

0.5

1.5

2.5

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

R , NORMALIZED

DS(on)

V =-3.5V

-10

-5.0

-7.0

-4.5

-4.0

Typical Electrical Characteristics

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

Figure 3. On-Resistance Variation with

Temperature. Figure 4. On-Resistance Variation with Drain

Current and Temperature.

Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with

Temperature.

-4-3.2-2.4-1.6-0.8

-20

-16

-12

-8

-4

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25125

V =- 10V

T = -55°C

-20-16-12-8-40

0.5

1.5

2.5

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = -10V

T = 125°C

25°C

-55°C

R , NORMALIZED

DS(on)

-50 -25 025 50 75 100 125 150

0.6

0.7

0.8

0.9

1.1

1.2

T , JUNCTION TEMPERATURE (°C)

GATE-SOURCE THRESHOLD VOLTAGE

V , NORMALIZED

GS(th)

I =- 250µA

V = VGS

-3-2-10

-20

-16

-12

-8

-4

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

V = -10V

-3.5

-4.0

-3.0

-2.5

-4.5

-5.0

-6.0

NDT456P Rev. F

-50 -25 0 25 50 75 100 125 150

0.94

0.96

0.98

1.02

1.04

1.06

1.08

1.1

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE

I =- 250µA

BV , NORMALIZED

DSS

J00.2 0.4 0.6 0.8 11.2

0.0001

0.001

0.01

0.1

-V , BODY DIODE FORWARD VOLTAGE (V)

-I , REVERSE DRAIN CURRENT (A)

T = 125°C

25°C

-55°C

V = 0V

0 10 20 30 40 50 60

Q , GATE CHARGE (nC)

-V , GATE-SOURCE VOLTAGE (V)

I = -7.5A

D-10V

-20V

V =- 5V

0.1 0.2 0.5 1 2 5 10 20 30

200

300

400

500

1000

2000

3000

4000

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

f = 1 MHz

V = 0V

oss

iss

rss

Figure 7. Breakdown Voltage Variation with

Temperature. Figure 8. Body Diode Forward Voltage Variation

with Current and Temperature.

Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.

Typical Electrical Characteristics

Figure 11. Switching Test Circuit.Figure 12. Switching Waveforms.

-VDD

VOUT

VGS DUT

VIN

RGENG10%

50%

90%

10%

90%

50%

VIN

VOUT

on off

d(off)f

d(on)

t t

INVERTED

10%

PULSE WIDTH

NDT456P Rev. F

Typical Thermal Characteristics

-10-8-6-4-20

I , DRAIN CURRENT (A)

g , TRANSCONDUCTANCE (SIEMENS)

25°C

V = -5V

125°C

T = -55°C

Figure 13. Transconductance Variation with Drain

Current and Temperature.

0 0.2 0.4 0.6 0.8 1

0.5

1.5

2.5

3.5

2oz COPPER MOUNTING PAD AREA (in )

STEADY-STATE POWER DISSIPATION (W)

4.5"x5" FR-4 Board

T = 25 C

Still Air

Figure 14. SOT-223 Maximum Steady-State Power

Dissipation versus Copper Mounting Pad

Area.

Figure 17. Transient Thermal Response Curve.

Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal

response will change depending on the circuit board design.

Figure 16. Maximum Safe Operating Area.

00.2 0.4 0.6 0.8 1

2oz COPPER MOUNTING PAD AREA (in )

-I , STEADY-STATE DRAIN CURRENT (A)

4.5"x5" FR-4 Board

T = 25 C

Still Air

V = -10V

0.1 0.2 0.5 1 2 5 10 30 50

0.01

0.03

0.1

0.3

- V , DRAIN-SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

RDS(ON) LIMIT

V = -10V

SINGLE PULSE

R = See Note 1c

T = 25°C

θJA

100ms

10s

10ms

1ms

100us

Figure 15. Maximum Steady-State Drain

Current versus Copper Mounting Pad

Area.

0.0001 0.001 0.01 0.1 1 10 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t / t

R (t) = r(t) * R

R = See Note 1 c

θJA

T - T = P * R (t)

θJAA

P(pk)

1 t

TRADEMARKS

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not intended to be an exhaustive list of all such trademarks.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT

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